Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
05/2008
05/02/2008WO2008051789A1 Method for easy-to-clean substrates and articles therefrom
05/02/2008WO2008051670A2 Substrate support structure with rapid temperature change
05/02/2008WO2008050708A1 Method for forming high dielectric film and method for manufacturing semiconductor device
05/02/2008WO2008050567A1 Shower plate sintered integrally with gas release hole member and method for manufacturing the same
05/02/2008WO2008049790A1 New group v metal containing precursors and their use for metal containing film deposition
05/02/2008WO2008049392A2 Vapour-deposited coating and thermally stressable component having such a coating, and also a process and apparatus for producing such a coating
05/02/2008WO2007147020A3 Cobalt precursors useful for forming cobalt-containing films on substrates
05/01/2008US20080103052 Superconductor material on a tape substrate
05/01/2008US20080102640 Etching oxide with high selectivity to titanium nitride
05/01/2008US20080102629 Systems and methods of forming tantalum silicide layers
05/01/2008US20080102313 Atomic layer chemical vapor deposition of hybrid organic inorganic coatings comprised of such as aluminium benzene oxides; optical properties
05/01/2008US20080102296 Smooth turbine engine components without machining or polishing; using electron beam physical vapor deposition or ion plasma cathodic arc deposition
05/01/2008US20080102223 Hybrid layers for use in coatings on electronic devices or other articles
05/01/2008US20080102222 Plasma apparatus and plasma processing method
05/01/2008US20080102218 forming films on substrate surfaces by atomic layer epitaxy/deposition; chemical vapor deposition
05/01/2008US20080102208 Vortex chamber lids for atomic layer deposition
05/01/2008US20080102207 gas supply integrated with heat treatment system, so that thin films can be deposited by chemical vapor deposition, then rapidly annealing on wafers in a reaction chamber; efficiency
05/01/2008US20080102206 Multilayered coatings for use on electronic devices or other articles
05/01/2008US20080102205 ALD of metal-containing films using cyclopentadienyl compounds
05/01/2008US20080102204 Vapor deposition of metal carbide films
05/01/2008US20080102203 gas delivery systems containing expanding channel, converge-diverge, multiple injection or extended cap coverings, used for depositing thin films high aspect ratios onto substrates
05/01/2008US20080102202 Mask etch plasma reactor with variable process gas distribution
05/01/2008US20080102200 Substrate processing system, substrate placing position adjusting method and storage medium
05/01/2008US20080101978 Method and apparatus for photomask etching
05/01/2008US20080099920 Multi-stage curing of low k nano-porous films
05/01/2008US20080099441 Apparatus and method for reactive atom plasma processing for material deposition
05/01/2008US20080099147 Temperature controlled multi-gas distribution assembly
05/01/2008US20080099146 Suspension for showerhead in process chamber
05/01/2008US20080099145 Gas sealing skirt for suspended showerhead in process chamber
05/01/2008US20080098957 Deposition apparatus and method
04/2008
04/30/2008EP1916877A1 Method and device for adjusting the electrical power supply of a magnetron, and installation for treatment of thermoplastic containers applying same
04/30/2008EP1916707A2 Methods for depositing metal films by CVD or ALD processes onto diffusion barrier layers
04/30/2008EP1916704A1 Method for forming film of group iii nitride such as gallium nitride
04/30/2008EP1916315A1 Internal barrier coating apparatus using microwave plasma for thermoplastic container
04/30/2008EP1916314A1 Method of optimizing process recipe of substrate processing system
04/30/2008EP1916253A1 New group V metal containing precursors and their use for metal containing film deposition
04/30/2008EP1915470A2 Deposition apparatus for semiconductor processing
04/30/2008EP1915419A2 Glazing system for vehicle tops and windows
04/30/2008EP1412098A4 Encapsulated long life electroluminescent phosphor
04/30/2008EP1390157B1 Method for temperature controlled vapor deposition on a substrate
04/30/2008EP1102872A4 Novel organocuprous precursors for chemical vapor deposition of a copper film
04/30/2008DE19921744B4 Verfahren zum Transport von mindestens einer dampfförmigen Substanz durch die Wand einer Vakuumkammer in die Vakuumkammer sowie Vorrichtung zur Durchführung des Verfahrens und deren Verwendung Method of transporting at least one vaporous substance through the wall of a vacuum chamber into the vacuum chamber as well as apparatus for carrying out the method and the use thereof
04/30/2008DE102007009992A1 Belt lock to seal one cavity from another has at least one roll with sealing element in one of its axial end regions to lie against belt edge
04/30/2008DE102007009710A1 Sluice for sealing a first chamber from a second chamber in the refining of a steel strip comprises a sealing unit having screening elements which slide relative to each other
04/30/2008DE102007009678A1 Lock system for sealing boundary of two chambers, between which strip metal passes, comprises at least two rollers, at least one of which has core covered with flexible material and with cylindrical central section and widened ends
04/30/2008DE102006050789A1 Vaporized coating for a gas turbine of an aircraft engine comprises pore formers formed as an adhesion promoting layer and/or a heat insulating layer
04/30/2008CN101171368A Vaporizer and method of vaporizing a liquid for thin film delivery
04/30/2008CN101171367A High efficiency UV cleaning of a process chamber
04/30/2008CN101171366A Method of forming silicon oxide containing films
04/30/2008CN101171365A Multiple inlet atomic layer deposition reactor
04/30/2008CN101171350A High performance alloys with improved metal dusting corrosion resistance
04/30/2008CN101170068A Method for making buffering layer on the base material
04/30/2008CN101170060A Making method for silicon germanium extension layer
04/30/2008CN101170053A Plasma processing device, plasma processing method and storage medium
04/30/2008CN101170050A Cleaning method for reaction cavity room, forming method of protection film, and protection wafer
04/30/2008CN101169048A Erosion-resistant coating and its preparation method
04/30/2008CN100385640C Anodized substrate support
04/30/2008CN100385623C CVD apparatus and method of cleaning the CVD apparatus
04/30/2008CN100385620C Electrode subassembly
04/30/2008CN100385611C Method and apparatus for monitoring film deposition in a process chamber
04/29/2008US7366395 Manufacturing method of die for optical element molding
04/29/2008US7365029 Method for silicon nitride chemical vapor deposition
04/29/2008US7365005 Method for filling of a recessed structure of a semiconductor device
04/29/2008US7364814 Separator of a fuel cell and a manufacturing method thereof
04/29/2008US7364808 Solar cells; film has discontinuous ridges of a first metal oxide and a continuous layer of a second metal oxide that has a continuous series of micron-size protrusions formed over and between the ridges; low resistance, a high transparency, good light scattering of solar spectrum; mass reproduction
04/29/2008US7364798 Internal member for plasma-treating vessel and method of producing the same
04/29/2008US7364772 Manifold; chamber for receiving organic material, an aperture plate for heating the organic material, emitting vaporized organics; coating an organic layer on a substrate of an OLED device; electrical insulator for concentrating heat in the unsupported region of the aperture plate
04/29/2008US7364624 Wafer handling apparatus and method of manufacturing thereof
04/29/2008US7364623 Confinement ring drive
04/29/2008US7363876 Multi-core transformer plasma source
04/29/2008CA2406210C Method of depositing silicon thin film and silicon thin film solar cell
04/24/2008WO2008048862A2 Formation of high quality dielectric films of silicon dioxide for sti: usage of different siloxane-based precursors for harp ii - remote plasma enhanced deposition processes
04/24/2008WO2008047838A1 Ti FILM FORMING METHOD AND STORAGE MEDIUM
04/24/2008WO2008047704A1 Method for manufacturing electronic device using plasma reactor processing system
04/24/2008WO2008047564A1 Semiconductor device manufacturing method and semiconductor device
04/24/2008WO2008047549A1 Transparent conductive film substrate and method of forming titanium oxide based transparent conductive film for use therein
04/24/2008WO2008047520A1 Plasma filming apparatus, and plasma filming method
04/24/2008WO2008047506A1 Vaporizer and film forming apparatus
04/24/2008WO2008047044A2 Sliding mating part in lubricated regime, coated by a thin film
04/24/2008WO2008028082A3 Precursors and hardware for cvd and ald
04/24/2008WO2008000573A3 Wear-resistant coating and production method for the same
04/24/2008WO2007144378A3 Cleaning device and cleaning process for a plasma reactor
04/24/2008WO2007130916A3 A method of ultra-shallow junction formation using si film alloyed with carbon
04/24/2008WO2007126585A3 Process for atomic layer deposition
04/24/2008WO2007042797A8 Positive displacement pumping chamber
04/24/2008US20080096381 Atomic layer deposition process for iridium barrier layers
04/24/2008US20080096369 Apparatus and method for high-throughput chemical vapor deposition
04/24/2008US20080095986 Multi-Layer Body with Differently Microstructured Areas Provided with an Electroconductive Coating
04/24/2008US20080095956 region-wise metallization on carrier substrate having soluble colored layer, hardener added to first layer, additive in second layer for inactivating hardener, removing inactivated materials via dissolving with water; vapor deposition, cathode sputtering
04/24/2008US20080095954 depositing a layer (first layer) of a plasma polymerized, optically clear, highly adherent, organosilicon compound onto the surface of the organic polymeric substrate by atmospheric pressure plasma deposition of a gaseous mixture comprising a tetraalkylorthosilicate
04/24/2008US20080095953 can prevent impurities from being formed by inhibiting plasma from being diffused into a nozzle pipe and sustained in the nozzle pipe and improve thickness uniformity of the deposited thin film
04/24/2008US20080095951 to reduce the number of thermal process steps as well as the peak process temperature used in the required process steps; the dielectric constant of the CVD deposited materials may be reduced by the electron beam process to a value below that attainable by conventional thermal processing
04/24/2008US20080095939 plurality of layers applied layer by layer to the peripheral surface by applying, using PVD, metal adhesive layer based on Cr to peripheral surface without adding nitrogen to process gas; Nitrogen is added while increasing the partial pressure forming a CrN gradient layer on the adhesive layer
04/24/2008US20080095938 heating chamber includes small process gap in which precursor layer is reacted with Group VIA material to form absorber layer; continuous flexible workpiece is unrolled and advanced from the supply chamber into heating chamber, and processed continuous flexible workpiece is taken up in receiving chamber
04/24/2008US20080095937 substrate support member, filament assembly support member, and precursor gas inlet all located in a vacuum chamber and a device for providing a clean portion of a filament inside the chamber without breaking vacuum; time required for changing catalyst filaments between successive runs may be reduced
04/24/2008US20080095936 Film forming system and method for forming film
04/24/2008US20080094724 Optical uses of diamondoid-containing materials
04/24/2008US20080094723 Optical uses of diamondoid-containing materials
04/24/2008US20080094722 Optical uses of diamondoid-containing materials
04/24/2008US20080093642 Image sensor and fabricating method thereof