Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
04/2008
04/08/2008US7354501 Upper chamber for high density plasma CVD
04/08/2008US7354500 Mask and apparatus using it to prepare sample by ion milling
04/08/2008US7354482 Film deposition device
04/08/2008US7353771 Method and apparatus of providing power to ignite and sustain a plasma in a reactive gas generator
04/08/2008CA2345743C Oxynitride encapsulated electroluminescent phosphor particles
04/03/2008WO2008039960A1 Heteroleptic organometallic compounds
04/03/2008WO2008039916A1 Organometallic precursor compounds
04/03/2008WO2008039606A1 Integrated substrate processing in a vacuum processing tool
04/03/2008WO2008038477A1 Planar heater and semiconductor heat treatment apparatus provided with the heater
04/03/2008WO2008038255A1 Silicon precursors and method for low temperature cvd of silicon-containing films
04/03/2008WO2007130490A3 Plasma reactor with a dynamically adjustable plasma source power applicator
04/03/2008US20080081216 Process for forming a film, piezoelectric film, piezoelectric device, and liquid discharge apparatus
04/03/2008US20080081215 Forming a piezoelectric film, where crystal containing little pyrochlore phase i reliably grown
04/03/2008US20080081176 Forming two protective layers on carbon nanotubes; filling clearances among the carbon nanotubes with a macromolecular Material; removing the protective layers from the carbon nanotubes so that opposite end portions of the carbon nanotubes protrude from opposite sides of the macromolecular material
04/03/2008US20080081151 Vapor deposited nanometer functional coating adhered by an oxide layer
04/03/2008US20080081127 Group 5 metal or a Group 6 metal complexed to anionic 6 electron donor ligand, an anionic 2 electron donor ligand, a cationic 2 electron donor ligand, or neutral 2 electron donor ligand; depositing a metal and/or metal carbide/nitride layer; liner or barrier layer for conducting metals
04/03/2008US20080081113 Nitrogen profile engineering in nitrided high dielectric constant films
04/03/2008US20080081112 Batch reaction chamber employing separate zones for radiant heating and resistive heating
04/03/2008US20080081104 chemical vapor deposition; supplying an aminosilane gas to a substrate surface forming absorption layer containing silicon, supplying oxidizing gas selected from oxygen, ozone, nitrogen oxide, nitrogen dioxide, dinitrogen oxide, and water vapor to oxidize silicon to form SiO2 film on target substrate
04/03/2008US20080078504 Self-Calibrating Optical Emission Spectroscopy for Plasma Monitoring
04/03/2008US20080078326 Pre-cleaning tool and semiconductor processing apparatus using the same
04/03/2008US20080078325 Processing system containing a hot filament hydrogen radical source for integrated substrate processing
04/03/2008US20080078324 Fluidized bed CVD arrangement
04/03/2008DE19730993B4 Vakuumbeschichtungsvorrichtung zum allseitigen Beschichten von Substraten durch Rotation der Substrate im Partikelstrom Vacuum coater for coating substrates on all sides by rotating the substrates in the particle flow
04/03/2008DE112006000654T5 Freitragendes Substrat, Verfahren zur Herstellung desselben und Halbleiterleuchtvorrichtung Of the same self-supporting substrate, methods for making and semiconductor light-emitting device
04/03/2008DE102007046875A1 Verfahren und Vorrichtung zur Herstellung einer anti-adhäsiven und verschleißbeständigen Oberfläche Method and apparatus for producing a wear-resistant and anti-adhesive surface
04/03/2008DE102006047010A1 Method for inserting and removing substrates from a vacuum coating installation comprises replacing already coated substrates with substrates to be coated while maintaining the process vacuum and further processing
04/03/2008DE102006046553A1 Applying a silicate layer comprises providing a substrate to be coated in a circulating air oven, bringing alkoxy- or halogen group containing silicon compound in liquid form into the oven and depositing the silicon layer on the substrate
04/02/2008EP1905868A1 Method and device for manufacturing an anti-adhesive and wear-resistant surface
04/02/2008EP1905063A1 System for supporting and rotating a susceptor inside a treatment chamber of a water treating apparatus
04/02/2008EP1904901A1 Reinforced micromechanical part
04/02/2008EP1904665A1 Improved support structure for radiative heat transfer
04/02/2008EP1904664A2 Method for plasma treatment of gas effluents
04/02/2008EP1904663A2 Method for decreasing chemical diffusion in parylene and trapping at parylene-to-parylene interfaces
04/02/2008EP1904661A1 Duplex surface treatment of metal objects
04/02/2008EP1815493B1 Vacuum processing chamber for very large area substrates
04/02/2008EP1397827B1 Arrangement comprising a support body with a substrate holder mounted thereon on a gas bearing with rotating drive
04/02/2008EP1366508A4 Apparatus and method for atmospheric pressure reactive atom plasma processing for surface modification
04/02/2008EP1333935A4 Coating formation by reactive deposition
04/02/2008CN101155676A Processes for the production of organometallic compounds
04/02/2008CN101155634A Method of treating a gas stream
04/02/2008CN101155463A Microwave plasma processing device, dielectric window manufacturing method and microwave plasma processing method
04/02/2008CN101154589A Film formation method and apparatus for forming silicon oxide film
04/02/2008CN101154565A Heat-conducting gas supply mechanism, supply method and substrate processing device and method
04/02/2008CN101154559A Technique for reducing particle in reaction chamber
04/02/2008CN101153387A High-density plasma deposition reaction chamber and air injection ring for reaction chamber
04/02/2008CN101153386A High-density plasma chemical vapor deposition method
04/02/2008CN101153385A Plasma body reinforced chemical vapor deposition method
04/02/2008CN101153384A Method for manufacturing unit doublet carbide codeposition fibre-reinforced composite
04/02/2008CN101153380A Vacuum production method for SiOx coating on organic precoating metal sheet
04/02/2008CN100378990C Low k and ultra low k SiCOH dielectric films and methods to form the same
04/02/2008CN100378925C Vacuum device, its particle monitoring method, program and window part for particle monitoring
04/02/2008CN100378923C Magnetron plasma processing apparatus
04/02/2008CN100378916C Method for making oxide neck strap of a channel capacitor
04/02/2008CN100378904C Cylinder for thermal processing chamber and its production method
04/02/2008CN100378900C Consecutive deposition system
04/02/2008CN100378520C Apparatus and method for forming film on base plate
04/02/2008CN100378239C Cemented carbide tool and method of making the same
04/01/2008USRE40195 Large area plasma source
04/01/2008USH2212 Method and apparatus for producing an ion-ion plasma continuous in time
04/01/2008US7352048 Integration of barrier layer and seed layer
04/01/2008US7351936 Method and apparatus for preventing baking chamber exhaust line clog
04/01/2008US7351670 Method for producing silicon nitride films and process for fabricating semiconductor devices using said method
04/01/2008US7351658 Process for producing yttrium oxide thin films
04/01/2008US7351626 Method for controlling defects in gate dielectrics
04/01/2008US7351449 Flame produced vapors are redirected by differential atmospheric pressure, such as by a blower or a vacuum; lower surface temperatures of substrates and coating of interior surfaces
04/01/2008US7351293 Method and device for rotating a wafer
04/01/2008US7351292 Assembly for processing substrates
04/01/2008US7351291 Semiconductor processing system
04/01/2008US7351285 Method and system for forming a variable thickness seed layer
04/01/2008US7350476 Method and apparatus to determine consumable part condition
04/01/2008CA2284363C Thermal barrier coating systems and materials
03/2008
03/27/2008WO2008036849A2 Particle trap / filter for recirculating a dilution gas in a plasma enhanced chemical vapor deposition system
03/27/2008WO2008036742A2 Method of chemical protection of metal surface
03/27/2008WO2008035632A1 PROCESS FOR PRODUCING GaN SINGLE-CRYSTAL, GaN THIN-FILM TEMPLATE SUBSTRATE AND GaN SINGLE-CRYSTAL GROWING APPARATUS
03/27/2008WO2008035508A1 Component for processing apparatus, processing apparatus, method for manufacturing component for processing apparatus, and method for manufacturing processing apparatus
03/27/2008WO2008035468A1 THIN NANODIAMOND FILM HAVING n-TYPE CONDUCTIVITY AND PROCESS FOR PRODUCING THE SAME
03/27/2008WO2008034756A1 Green compact consisting of a polymer ceramic material and method for sealing openings in components
03/27/2008WO2008034468A1 Method for the deposition of a ruthenium containing film
03/27/2008WO2008011579A3 Small volume symmetric flow single wafer ald apparatus
03/27/2008WO2008002831A3 Medical device
03/27/2008WO2007127007A8 System and method for transport
03/27/2008WO2007083654A8 Process for producing siliceous film and substrate with siliceous film produced thereby
03/27/2008US20080076237 Method for producing semi-conducting devices and devices obtained with this method
03/27/2008US20080075899 System and method of coating substrates and assembling devices having coated elements
03/27/2008US20080075888 Reduction of hillocks prior to dielectric barrier deposition in cu damascene
03/27/2008US20080075881 Method of Forming A Metallic Oxide Film Using Atomic Layer Deposition
03/27/2008US20080075858 Ald apparatus and method for depositing multiple layers using the same
03/27/2008US20080075857 Method of facbricating buffer layer on substrate
03/27/2008US20080075856 Deposition apparatus, deposition method, method of manufacturing liquid crystal device
03/27/2008US20080075855 Carbiding, nitriding or metallization; vapor deposition of carbides, carbonitrides, nitrides or metal silicon nitrides or carbides from organometallic compounds in presence of adhesion promoter; forming copper film
03/27/2008US20080075854 Ex-situ vapor phase lubrication for magnetic recording media
03/27/2008US20080075853 control cooling the upper and lower cooling plates, positioning upper cooling plate above substrate into close proximity to form spatial volume, sealing maintained at high pressure; depositing a thin film on semiconductors; without damaging the substrates, eliminate deflection, bending stress
03/27/2008US20080075852 Method of cleaning reaction chamber, method of forming protection film and protection wafer
03/27/2008US20080075835 for integrated substrate processing in Cu metallization. The method includes providing a substrate in a vacuum processing tool containing a plurality of processing systems configured to process the substrate and a substrate transfer system configured to transfer the substrate under vacuum conditions
03/27/2008US20080075834 provides methods and apparatus for controlling ion dosage in real time during plasma processes. In one embodiment, ion dosages may be controlled using in-situ measurement of the plasma from a mass distribution sensor combined with in-situ measurement from an RF probe.
03/27/2008US20080075625 Conductive Material Comprising an Me-Dlc Hard Material Coating
03/27/2008US20080074771 Method for providing an anti-stiction coating on a metal surface
03/27/2008US20080073766 System for manufacturing microelectronic, microoptoelectronic or micromechanical devices
03/27/2008US20080073645 Thin films and methods of making them