Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
05/2008
05/13/2008US7371878 vapor tantalum complex recursor for vapor depositing a barrier layer selected from tantalum nitride, tantalum oxide or bismuth tantalum oxide; chemical vapor deposition and atomic layer deposition; integrated circuits has copper or ferroelectric thin films
05/13/2008US7371688 Removal of transition metal ternary and/or quaternary barrier materials from a substrate
05/13/2008US7371670 Method for forming a (TaO)1-x(TiO)xN dielectric layer in a semiconductor device
05/13/2008US7371467 Process chamber component having electroplated yttrium containing coating
05/13/2008US7371436 Method and apparatus for depositing materials with tunable optical properties and etching characteristics
05/13/2008US7371429 Precursor, thin layer prepared including the precursor, method of preparing the thin layer and phase-change memory device
05/13/2008US7371428 Duplex gas phase coating
05/13/2008US7371427 Preconditioning a processing chamber used to form a barrier layer on top of a copper layer by depositing a seasoning layer of silicon oxide on exposed surfaces and optionally exposing the chamber to a plasma before introducing a substrate bearing a copper layer
05/13/2008US7371426 lower growth environmental bond coating of an aluminum alloy applied to the remaining base metal substrate so that upon subsequent repair of the component, less of the remaining base metal substrate is removed because of less environmental coating growth into the substrate than prior bond coat
05/13/2008US7371287 Substrate handling system
05/13/2008US7371286 Wiring repair apparatus
05/13/2008US7371285 Motorized chamber lid
05/13/2008US7370848 Bubbler for substrate processing
05/08/2008WO2008054833A2 Systems and methods for forming magnetic nanocomposite materials
05/08/2008WO2008053632A1 Ethylene-tetrafluoroethylene copolymer molded product and method for producing the same
05/08/2008WO2008053625A1 Method of film deposition and apparatus for treating substrate
05/08/2008WO2008053271A1 Deposition of amorphous silicon films by electron cyclotron resonance
05/08/2008WO2008052708A1 Film deposition of amorphous films by electron cyclotron resonance
05/08/2008WO2008052707A1 Film deposition of amorphous films with a graded bandgap by electron cyclotron resonance
05/08/2008WO2008034092A3 System and method for detecting non-cathode arcing in a plasma generation apparatus
05/08/2008WO2008025353A3 Apparatus and method of forming thin silicon nitride layers on surfaces of crystalline silicon solar wafers
05/08/2008WO2008016390A3 Catalyst for the growth of carbon single-walled nanotubes
05/08/2008WO2008014915A3 Method for the plasma treatment of a surface
05/08/2008WO2008011579A9 Small volume symmetric flow single wafer ald apparatus
05/08/2008WO2008002780B1 Batch processing platform for ald and cvd
05/08/2008WO2007095490A3 Methods of using halogen-containing organic compounds to remove deposits from internal surfaces of turbine engine components
05/08/2008WO2007030225A3 A method of forming a tantalum-containing layer from a metalorganic precursor
05/08/2008US20080108175 Method of forming a phase change layer and method of manufacturing a storage node having the phase change layer
05/08/2008US20080108174 Methods of manufacturing a phase change memory device, in which fine contact holes can be filled stably, with little to no void formation, using metal precursor for low temperature deposition, wherein the metal is germanium, antimony, or tellurium
05/08/2008US20080107826 Method and apparatus for fabricating nanostructure multi-element compound
05/08/2008US20080107825 using radio frequency electric power for exciting plasma; vapor depositing Ta barrier layer of Cu diffusion preventing film, which is formed between an insulating film and Cu wirings in semiconductor device; protects the gas supply part from etching of excited halogen element by SiC protective film
05/08/2008US20080107824 Chemical vapor deposition of oxide film on target substrate; supplying the process gas excited by exciting mechanism; silane gas, oxidizing gas or oxynitriding gas; adsorbing oxide film on substrate by oxidizing gas radicals; forming high quality oxide film at low temperature, prevent current leakage
05/08/2008US20080107820 Deposition Rate Plasma Enhanced Chemical Vapor Process
05/08/2008US20080107812 chemical intermediates has mix of open and cyclic ligands or direct bonds for chemical vapor deposition, atomic layer deposition; forming capacitor electrode barrier against oxygen diffusion; improve reactivity of process at low temperature, high quality
05/08/2008US20080107810 Method for forming anti-corrosion and anti-oxidation coating layer on high-temperature components of gas turbine fuel additive
05/08/2008US20080107809 Vortex chamber lids for atomic layer deposition
05/08/2008US20080107808 chemical vapor deposition of aluminium coatings on turbine blade; liquid aluminium is provided in the inner generator to increase the reactivity of the process gas aluminum chloride; chemical metallization; electroless deposition of metal
05/08/2008US20080107805 Fine-Grained metallic coatings having the coefficient of thermal expansion matched to the one of the substrate
05/08/2008US20080107804 Deposition Method For Oxide Thin Film Or Stacked Metal Thin Films Using Supercritical Fluid Or Subcritical Fluid, And Deposition Apparatus Therefor
05/08/2008US20080106842 Mounting device, plasma processing apparatus and plasma processing method
05/08/2008US20080105650 Plasma processing device and plasma processing method
05/08/2008US20080105379 Plasma processing apparatus
05/08/2008US20080105204 Substrate processing apparatus and manufacturing method for semiconductor devices
05/08/2008US20080105203 Component for substrate processing apparatus and method of forming film on the component
05/08/2008US20080105202 Tandem process chamber
05/08/2008US20080105194 Gas supply system, gas supply method, method of cleaning thin film forming apparatus, thin film forming method and thin film forming apparatus
05/08/2008CA2668153A1 Ethylene/tetrafluoroethylene copolymer molded product and method for its production
05/08/2008CA2666127A1 Method of densifying porous articles
05/07/2008EP1918967A1 Method of forming a film by deposition from a plasma
05/07/2008EP1918420A1 Low temperature aerosol deposition of a plasma resistive layer
05/07/2008EP1918417A1 Method of forming film and apparatus for film formation
05/07/2008EP1918416A1 Method for transferring a thin layer and product obtained
05/07/2008EP1918415A1 Low dielectric constant material and method of processing by CVD
05/07/2008EP1918414A1 Film deposition of amorphous films with a graded bandgap by electron cyclotron resonance
05/07/2008EP1918412A1 Apparatus for selective deposition of graded coatings
05/07/2008EP1917674A1 Optical emission interferometry for pecvd using a gas injection hole
05/07/2008EP1917379A2 Eb-pvd system with automatic melt pool height control
05/07/2008EP1917211A2 An apparatus and method for growing a synthetic diamond
05/07/2008EP1537057B1 Method for producing layers and layer systems and coated substrate
05/07/2008EP1230664B1 Processing systems
05/07/2008EP1029942B9 Vacuum device
05/07/2008CN201055536Y High-bioavailability surface modified nano diamond plated film orthopaedics functional material
05/07/2008CN101176190A Ozone post-deposition treatment to remove carbon in a flowable oxide film
05/07/2008CN101176187A Shower plate and method for manufacturing the same
05/07/2008CN101175869A Deposition methods, and deposition apparatuses
05/07/2008CN101175868A Bonding an adherent to a substrate via a primer
05/07/2008CN101174577A Integration of ald tantalum nitride and alpha-phase tantalum for copper metallization application
05/07/2008CN101174554A Substrate processing apparatus
05/07/2008CN101174553A Island-projection-decorated component, its manufacturing method, and apparatus using it
05/07/2008CN101174552A Apparatus for semiconductor process
05/07/2008CN101174544A Device and method for increasing tool utilization/reduction in MWBC for UV curing chamber
05/07/2008CN101174542A Gas injection apparatus
05/07/2008CN101173349A Method for forming anti-corrosion and anti-oxidation coating layer on high-temperature components of gas turbine fuel additive
05/07/2008CN101173348A Method for deposition compact SiO2 with low damnification PECVD
05/07/2008CN101172268A Showerhead for a gas supply apparatus
05/07/2008CN100386889C Boron phosphide-based semiconductor light-emitting device, production method thereof and light-emitting diode
05/07/2008CN100386853C Method for forming oxide layer in ONO structure
05/07/2008CN100386847C Wafer holder
05/07/2008CN100386845C Nitride semiconductor thin film and method for growing the same
05/07/2008CN100386668C Plasma uniformity control by gas diffuser hole design
05/07/2008CN100386473C Collosol/gel preparation method for Sm2O3 photoelectric film
05/07/2008CN100386472C Ultralow dielectric constant material as intralevel or interlevel dielectric in semiconductor device, method for fabricating the same, and electronic device containing the same
05/07/2008CN100386471C Method for controlling growth of carbon nanotube by ion Injection surface modification
05/07/2008CN100386467C Method for regenerating container for plasma treatement, member inside container for plasma treatment, method for preparing member inside container for plasma treatment, and apparatus for plasma proce
05/07/2008CN100386155C Method and device for simultaneous coating and moulding of body
05/06/2008US7369758 Molecular beam source for use in accumulation of organic thin-films
05/06/2008US7369593 Semiconductor laser and method for manufacturing the same
05/06/2008US7368402 Systems and methods for forming tantalum oxide layers and tantalum precursor compounds
05/06/2008US7368384 Film formation apparatus and method of using the same
05/06/2008US7368382 Atomic layer deposition methods
05/06/2008US7368367 Method for forming a semiconductor
05/06/2008US7368168 Amorphous hard carbon film includes 1 to 20 atomic % or less silicon, 20 to 50 atomic % or less hydrogen, and the balance carbon; when contacted with a mating member under a wet condition employing a low additive lubricant, a silanol layer is produced; surface roughness Rzjis of 0.5 mu m or less
05/06/2008US7368018 Chemical vapor deposition apparatus
05/06/2008US7368014 Variable temperature deposition methods
05/06/2008US7367875 CVD diamond-coated composite substrate containing a carbide-forming material and ceramic phases and method for making same
05/06/2008US7367350 Processing device and method of maintaining the device
05/06/2008US7367281 Plasma antenna
05/06/2008CA2447282C Support with integrated deposit of gas absorbing material for manufacturing microelectronic, microoptoelectronic or micromechanical devices
05/02/2008WO2008052047A2 Vortex chamber lids for atomic layer deposition
05/02/2008WO2008051851A1 Plasma-enhanced deposition of metal carbide films