Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
06/2008
06/03/2008US7381445 Method of coating a ceramic matrix composite fiber
06/03/2008US7381293 Convex insert ring for etch chamber
06/03/2008US7381292 Inductively coupled plasma generating apparatus incorporating serpentine coil antenna
06/03/2008US7381291 Dual-chamber plasma processing apparatus
06/03/2008US7381290 Microwave plasma generator
06/03/2008US7381276 Susceptor pocket with beveled projection sidewall
06/03/2008US7381275 Apparatus and method for manufacturing semiconductor
06/03/2008US7381274 Gas valve assembly and apparatus using the same
06/03/2008US7381052 Apparatus and method for heating substrates
05/2008
05/29/2008WO2008063266A1 Multilayered coatings for use on electronic devices or other articles
05/29/2008WO2008062730A1 Process for producing plastic container coated with oxide thin film
05/29/2008WO2008062685A1 Substrate provided with transparent conductive film for photoelectric conversion device, method for manufacturing the substrate, and photoelectric conversion device using the substrate
05/29/2008WO2008062663A1 Method for manufacturing solar cell and apparatus for manufacturing solar cell
05/29/2008WO2008062269A1 Reactor for growing crystals
05/29/2008WO2007057631A3 Improved bubbler for the transportation of substances by a carrier gas
05/29/2008US20080124945 Production Method for Semiconductor Device and Substrate Processing Apparatus
05/29/2008US20080124941 Manufacturing method of semiconductor device and semiconductor device manufacturing apparatus
05/29/2008US20080124901 Method for maintaining semiconductor manufacturing apparatus, semiconductor manufacturing apparatus, and method for manufacturing semiconductor
05/29/2008US20080124817 Stress measurement and stress balance in films
05/29/2008US20080124670 Inductively heated trap
05/29/2008US20080124485 prevent wafer breaking prior depositing another film over, by removing accumulated electric charges in presence of inert gas; chemical vapor deposition; improve film quality
05/29/2008US20080124484 pretreating the semiconductor surface with a metal-organic precursor, forming metal nitrides, or carbonitrides barrier layer, prior depositing ruthenium thin film, for improving adhesion with Cu wire
05/29/2008US20080124479 Processes for preparing corrosion resistant coating systems for silicon-containing substrates
05/29/2008US20080124463 Chemical vapor deposition
05/29/2008US20080124462 Chemical vapor infiltration/chemical vapor deposition (CVI/CVD); carbon fibers; machining
05/29/2008US20080124460 Methods of obtaining photoactive coatings and/or anatase crystalline phase of titanium oxides and articles made thereby
05/29/2008US20080124453 In-situ detection of gas-phase particle formation in nitride film deposition
05/29/2008US20080121890 Deposition method of insulating layers having low dielectric constant of semiconductor device, a thin film transistor substrate using the same and a method of manufacturing the same
05/29/2008US20080121620 Processing chamber
05/29/2008US20080121344 Plasma processing apparatus
05/29/2008US20080121249 Method for Cleaning Film-Forming Apparatuses
05/29/2008US20080121225 Radiation selective absorber coating for an absorber pipe, absorber pipe with said coating, and method of making same
05/29/2008US20080121184 In-situ method of cleaning vaporizer during dielectric layer deposition process
05/29/2008US20080121183 supporting bars
05/29/2008US20080121182 Apparatus of supplying organometallic compound
05/29/2008US20080121181 Cvd process for forming a thin film
05/29/2008US20080121180 Substrate Processing Apparatus and Reaction Container
05/29/2008US20080121179 Gas baffle and distributor for semiconductor processing chamber
05/29/2008US20080121178 Dual top gas feed through distributor for high density plasma chamber
05/29/2008US20080121177 Dual top gas feed through distributor for high density plasma chamber
05/29/2008US20080121176 Installation for depositing, by means of a microwave plasma, an internal barrier coating on thermoplastic containers
05/29/2008DE10342398B4 Schutzschicht für einen Körper sowie Verfahren zur Herstellung und Verwendung von Schutzschichten Protective layer for a body and methods of making and use of protective layers
05/29/2008DE102006052586A1 Verfahren und Vorrichtung zur Reinigung der Abgase einer Siliziumdünnschicht-Produktionsanlage Method and apparatus for cleaning the exhaust gases of a silicon thin film production plant
05/28/2008EP1926211A2 Diamond enhanced thickness shear mode resonator
05/28/2008EP1926133A2 A method for boron contamination reduction in IC fabrication
05/28/2008EP1925692A1 Method of depositing hafnium silicate by catalyst assisted atomic layer deposition
05/28/2008EP1925691A1 Low temperature ALD SiO2
05/28/2008EP1924722A2 Methods of making shape memory films by chemical vapor deposition and shape memory devices made thereby
05/28/2008EP1754254B1 Lift pin with roller glide for reducing friction
05/28/2008EP1535319A4 Atomic layer deposition of high k metal oxides
05/28/2008EP1535314A4 High rate deposition at low pressures in a small batch reactor
05/28/2008CN201065431Y Fast discharging cold trap for metal organic chemical gas phase deposition device vacuum system
05/28/2008CN101189360A Method for forming vapor deposition film by using surface wave plasma, and apparatus therefor
05/28/2008CN101188207A Electrostatic sucking electrode, substrate processing apparatus and manufacturing method for electrostatic sucking electrode
05/28/2008CN101188189A Plasma confinement baffle and flow equalizer for enhanced magnetic control of plasma radial distribution
05/28/2008CN101187016A Large area VHF-PECVD reaction chamber back feed-in type parallel plate electrode capable of obtaining even electric field
05/28/2008CN101187015A Large area VHF-PECVD reaction chamber special-shaped electrode capable of obtaining even electric field
05/28/2008CN101187014A Large area VHF-PECVD reaction chamber electrode capable of obtaining even electric field
05/28/2008CN101187013A Plasma processing chamber with ground member integrity indicator and method for using the same
05/28/2008CN101187012A Method of depositing hafnium silicate assisted by catalyst
05/28/2008CN101187011A Method of improving initiation layer for low-k dielectric film by digital liquid flow meter
05/28/2008CN101186488A Method for manufacturing alumina made ceramic structure member
05/28/2008CN101186135A Coated inserts for milling of compacted graphite iron
05/28/2008CN100391035C Thin film lithium battery using diselenid nickel thin film as cathode material and its preparation method
05/28/2008CN100390958C Plasma enhanced ALD of tantalum nitride and bilayer
05/28/2008CN100390943C Thin-film shaper and shaping method thereof
05/28/2008CN100390922C Evaluation of chamber components having textured coatings
05/28/2008CN100390317C Film forming apparatus
05/28/2008CN100390316C Method for preparing n type CVD co-doped diamond film
05/28/2008CN100390304C Laser strengthening and toughening method for interface between ground-mass and coating
05/28/2008CN100390186C Organic iridium compound, method for producing the compound and method for producing film
05/27/2008US7378354 Atomic layer deposition methods
05/27/2008US7378304 Method of forming silicon oxide layer and method of manufacturing thin film transistor thereby
05/27/2008US7378133 Fabrication system, light-emitting device and fabricating method of organic compound-containing layer
05/27/2008US7378129 Chemisorption ; contacting cycles
05/27/2008US7378128 applying release coatings comprising silica, silicon nitride, silicon dioxide and silicon multilayers on the surfaces of containers, used for handling of melts that are solidified and removed as ingots
05/27/2008US7378127 Chemical vapor deposition methods
05/27/2008US7378126 Light-emitting device and method of manufacturing the same, and method of operating manufacturing apparatus
05/27/2008US7377977 High-purity crystal growth
05/27/2008US7377976 Method for growing thin oxide films
05/27/2008US7377228 System for and method of gas cluster ion beam processing
05/22/2008WO2008059925A1 Gas barrier film laminate
05/22/2008WO2008059896A1 Abrasion-resistant film and tool provided with the same
05/22/2008WO2008059857A1 Thin-film photoelectric conversion device
05/22/2008WO2008059705A1 Photogravure engraving roll and method for manufacturing the same
05/22/2008WO2008059070A2 Method for regulating nanoscale electron beam induced depositions
05/22/2008WO2008042691A3 Processing system containing a hot filament hydrogen radical source for integrated substrate processing
05/22/2008WO2008027956A3 Continuous dopant addition
05/22/2008WO2008027216A9 Processes and integrated systems for engineering a substrate surface for metal deposition
05/22/2008WO2008017678A3 Power control for densification of one or more porous articles
05/22/2008WO2007121087A3 Controlling plasma processing using parameters derived through the use of a planar ion flux probing arrangement
05/22/2008US20080119098 Atomic layer deposition on fibrous materials
05/22/2008US20080118844 Borides, carbides, nitrides, and/or oxides of silicon and metal such as cobalt or nickel; high-performance, high discharging capacity, high charging/discharging efficiency in the initial stage and during cyclic operation
05/22/2008US20080118770 Continuously coating an ultra-hydrophilic titanium compound thin film on both surfaces of a sheet-shaped metal substrate in a vacuum chamber using plasma, mechanically processing the thin film coated sheet into a target shape
05/22/2008US20080118734 Coating Compositions
05/22/2008US20080118712 Epitaxially coated semiconductor wafer and device and method for producing an epitaxially coated semiconductor wafer
05/22/2008US20080118664 Forming a dense and relatively thick film; for forming a film on a surface of a workpiece using an electric discharge machining technology
05/22/2008US20080118663 Depositing a film through a plasma enhanced chemical vapor deposition; suitable for use with large area glass or polymer substrate
05/22/2008US20080118662 Transforming an amorphous Si film into a microcrystalline or nano-crystalline Si thin film with a metal silicide of Si Al (aluminum) through a process in a reacting chamber only
05/22/2008US20080118643 Multilayer nitride-containing coatings