Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
06/2008
06/11/2008CN101197249A Reaction cavity lining and reaction cavity including the same
06/11/2008CN101195910A Method for detecting exception condition of tungsten chemical vapor deposition equipment
06/11/2008CN101195909A Direct current plasma chemical vapor deposition equipment
06/11/2008CN101195908A Technique for cleaning reaction chamber of chemical vapor deposition equipment
06/11/2008CN101195288A Coated cutting tool insert
06/11/2008CN101195193A Laser processing apparatus, laser processing method, manufacturing method of wiring substrate, manufacturing method of display apparatus and wiring substrate
06/11/2008CN101195112A Gas injection apparatus
06/11/2008CN100394551C Solid organometallic compound-filled container and filling method thereof
06/11/2008CN100394550C Coated semiconductor wafer, and process and device for producing the semiconductor wafer
06/11/2008CN100394549C Semiconductor layer
06/11/2008CN100394535C High-density plasma processing apparatus
06/11/2008CN100394060C Airplane carbon brake disc integral adhesive maintenance method
06/10/2008US7384875 Method of manufacturing semiconductor device using flexible tube
06/10/2008US7384867 Formation of composite tungsten films
06/10/2008US7384828 Semiconductor film, semiconductor device and method of their production
06/10/2008US7384696 Corrosion resistant member and method for manufacturing the same
06/10/2008US7384693 Diamond-like carbon films with low dielectric constant and high mechanical strength
06/10/2008US7384689 Cemented carbide body
06/10/2008US7384668 CCVD method for producing tubular carbon nanofibers
06/10/2008US7384663 Carbon nanotubes; surface treatment; brake discs
06/10/2008US7384486 Chamber cleaning method
06/10/2008US7384471 Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
06/10/2008US7383841 Method of cleaning substrate-processing device and substrate-processing device
06/10/2008US7383702 Method of forming a phosphorus doped optical core using a PECVD process
06/10/2008CA2247210C Improved fine powders and method for manufacturing
06/05/2008WO2008067379A2 System and method for depositing a gaseous mixture onto a substrate surface using a showerhead apparatus
06/05/2008WO2008066841A2 Inductively heated trap
06/05/2008WO2008066804A1 Quartz encapsulated heater assembly
06/05/2008WO2008066520A1 Antireflective surfaces, methods of manufacture thereof and articles comprising the same
06/05/2008WO2008066438A1 Wear resistant tool for wood chipping
06/05/2008WO2008066173A1 Amorphous carbon film, semiconductor device, film forming method, film forming apparatus and storage medium
06/05/2008WO2008066172A1 Film forming method, film forming apparatus, storage medium and semiconductor device
06/05/2008WO2008066103A1 Substrate processing apparatus
06/05/2008WO2008065918A1 Solar cell and method for manufacturing the same
06/05/2008WO2008065861A1 Atmospheric plasma processing apparatus and atmospheric plasma processing method
06/05/2008WO2008065804A1 Apparatus and method for manufacturing semiconductor element and semiconductor element manufactured by the method
06/05/2008WO2008065745A1 Plasma processing apparatus
06/05/2008WO2008065744A1 Plasma processing apparatus
06/05/2008WO2008045130A9 Property modification during film growth
06/05/2008WO2008044951A3 An implant for bone replacement and attachment
06/05/2008WO2008042590A3 Batch reaction chamber employing separate zones for radiant heating and resistive heating
06/05/2008WO2008033436A8 Systems and methods for forming strontium-and/or barium-containing layers
06/05/2008WO2008012098A3 Silane-free plasma-assisted cvd deposition of silicon nitride as an antireflective film and for hydrogen passivation of photocells constructed on silicon wafers
06/05/2008US20080132087 Post-deposition treatment to enhance properties of si-o-c low k films
06/05/2008US20080132069 Apparatus and method for forming a thin layer on semiconductor substrates
06/05/2008US20080132061 Contact barrier layer deposition process
06/05/2008US20080132045 Laser-based photo-enhanced treatment of dielectric, semiconductor and conductive films
06/05/2008US20080132044 Nitride Semiconductor Device Manufacturing Method
06/05/2008US20080132040 Deposition Technique for Producing High Quality Compound Semiconductor Materials
06/05/2008US20080132018 Formation and treatment of epitaxial layer containing silicon and carbon
06/05/2008US20080131979 Vapor-Phase Growth System and Vapor-Phase Growth Method
06/05/2008US20080131727 Work piece with a hard film of alcr-containing material, and process for its production
06/05/2008US20080131725 at cycle times and at a cost that match similar processes on alloyed cast grey iron under dry and wet conditions; tunsten carbide with Cobalt and Tanatalum and Niobium and a highly W-alloyed binder phase; alumina layer and titanium nitride layer
06/05/2008US20080131635 Laminate Comprising Multilayer Film Assembled By Hydrogen Bond, Self-Supported Thin Film Obtained Therefrom, and Production Method and Application of the Same
06/05/2008US20080131623 Mold is disposed in an evacuable chamber, cleaned to remove surface organic contamination and coated with the surface release layer in a chamber, all without relocation or undesired time delay; imprint lithography
06/05/2008US20080131611 Method for Application of a Thermal Barrier Coating and Resultant Structure Thereof
06/05/2008US20080131602 Depositing metal oxide film comprised of transition metal growth agent, agglomeration preventing precursor metal and precious metal providing quasi explosive dispersion effect upon reduction; forming such as cobalt metal, chromium oxide and platinum metal high performance film
06/05/2008US20080131601 Uniform film deposition; exposing wafer alternately to two different chemically reactive precursors under starved saturation conditions; rapid deposition rate, high throughput
06/05/2008US20080131479 Endoprosthesis with three-dimensional disintegration control
06/05/2008US20080128871 Apparatus and Process for Producing Thin Films and Devices
06/05/2008US20080128863 Fabrication method of semiconductor device and semiconductor device
06/05/2008US20080128772 In-Situ Formation of Metal Insulator Metal Capacitors
06/05/2008US20080128656 Process for Preparing Metal or Metal Alloy Nanoparticles Dispersed on a Substrate by Chemical Vapour Deposition
06/05/2008US20080128089 Plasma processing apparatus
06/05/2008US20080127895 Ultraviolet-ray-assisted processing apparatus for semiconductor process
06/05/2008US20080127894 Housing assembly for an induction heating device including liner or susceptor coating
06/05/2008US20080127893 Method and apparatus for preventing the formation of a plasma-inhibiting substance
06/05/2008DE4416525B4 Verfahren zur Herstellung einer Beschichtung erhöhter Verschleißfestigkeit auf Werkstückoberflächen, und dessen Verwendung A process for producing a coating of increased wear resistance on workpiece surfaces, and the use thereof
06/05/2008CA2613079A1 Method for producing porous surfaces on metal components
06/04/2008EP1927124A2 Method and device for the plasma treatment of the interior of hollow bodies
06/04/2008EP1926840A1 Apparatus and process for surface treatment of substrate using an activated reactive gas
06/04/2008EP1660698B1 Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces
06/04/2008EP1603924B1 Alcoholates of rare earth mtals a precursors for metaloxides layers or films
06/04/2008EP1153739B1 Aerogel substrate and method for preparing the same
06/04/2008EP1141439A4 Distributed control system architecture and method for a material transport system
06/04/2008CN101194053A Method for producing gaxin1-xn(0<=x<=1=1) crystal, gaxin1-xn(0<=x<=1=1) crystalline substrate, method for producing gan crystal, gan crystalline substrate, and product
06/04/2008CN101194049A Method for electrodeposition of bronzes
06/04/2008CN101194046A Methods for wet cleaning quartz surfaces of components for plasma processing chambers
06/04/2008CN101194040A Rotating substrate support and methods of use
06/04/2008CN101192534A Film formation apparatus for semiconductor process and method for using the same
06/04/2008CN101192511A Vacuum processing device
06/04/2008CN101192508A Xenon difluoride selective erosion for titanium nitride
06/04/2008CN101191204A Method for preparing network interpenetration type diamond coat multi-pore electrode
06/04/2008CN101191203A Plasma reactor substrate mounting surface texturing
06/04/2008CN101191202A Heating system for metal organic substance chemical gaseous phase deposition device reaction cavity
06/04/2008CN101191201A Reaction cavity for metal organic substance chemical gaseous phase deposition device
06/04/2008CN101191200A Gas baffle and distributor for semiconductor processing chamber
06/04/2008CN101191199A APCVD spraying formulation
06/04/2008CN101191198A Method for forming alignment layers for liquid crystal displays
06/04/2008CN101190786A Nano metal particle and its nano carbon tube and its luminous element preparation method
06/04/2008CN101190779A Magnetic field auxiliary chemical vapor deposition method
06/04/2008CN100392929C Semiconductor device and method for fabrication thereof
06/04/2008CN100392815C Apparatus capable of eliminating slip line and high stress zone in silicon gas phase epitaxial layer
06/04/2008CN100392804C Semiconductor processing equipment having tiled ceramic liner
06/04/2008CN100392792C Linear drive system for use in plasma processing system
06/04/2008CN100392276C One piece shim
06/04/2008CN100392148C Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD
06/03/2008US7381673 SiC, SiO2, and Al and/or Si, with He leak rate of 1.3x10-10 Pa*m3/sec or below; high vacuum air-tightness, excellent thermal conductivity, adjustable coefficient of thermal expansion, small variation in strength and high reliability
06/03/2008US7381661 Method for the production of a substrate with a magnetron sputter coating and unit for the same
06/03/2008US7381452 low temperature, low power and low vacuum cathodic sputtering process