Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
09/2008
09/09/2008US7422655 Apparatus for performing semiconductor processing on target substrate
09/09/2008US7422654 Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor
09/09/2008US7422653 Single-sided inflatable vertical slit valve
09/09/2008US7422637 Processing chamber configured for uniform gas flow
09/09/2008US7422636 Plasma enhanced atomic layer deposition system having reduced contamination
09/09/2008US7422635 Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces
09/09/2008US7422198 Liquid substance supply device for vaporizing system, vaporizer, vaporization performance appraisal method
09/09/2008US7421974 Layer forming method, product comprising the layer, optical film, dielectric-coated electrode and plasma discharge apparatus
09/09/2008US7421973 System and method for performing SIMOX implants using an ion shower
09/04/2008WO2008106636A1 Process chamber and load-lock split frame construction
09/04/2008WO2008106542A1 Apparatus and method for deposition over large area substrates
09/04/2008WO2008106520A2 Single wafer anneal processor
09/04/2008WO2008105736A2 Method, material and apparatus for enhancing dynamic stiffness
09/04/2008WO2008105451A1 METHOD FOR FORMING SrTiO3 FILM AND STORAGE MEDIUM
09/04/2008WO2008105360A1 Semiconductor device manufacturing method and semiconductor device manufacturing apparatus
09/04/2008WO2008105338A1 Intermediate transfer member and image formation apparatus
09/04/2008WO2008105255A1 Method of cleaning plasma-treating apparatus, plasma-treating apparatus where the cleaning method is practiced, and memory medium memorizing program executing the cleaning method
09/04/2008WO2008104169A1 Method and apparatus for the treatment of strip-shaped substrate in a vacuum coating system
09/04/2008WO2008104059A1 Method for forming a film on a substrate
09/04/2008WO2008104013A2 Method for the production of a coating
09/04/2008US20080214012 Apparatus and method for fabricating semiconductor devices and substrates
09/04/2008US20080213998 Method for manufacturing semiconductor device, semiconductor manufacturing apparatus and storage medium for executing the method
09/04/2008US20080213505 Inducing a gas chemistry on a substrate, having a layer of close packed particles acting as dummy matrices, under conventional CVD diamond deposition conditions; nanoflakes, nanotubes, nanorods and nanospheres
09/04/2008US20080213504 Plasma Film-Forming Apparatus and Plasma Film-Forming Method
09/04/2008US20080213479 Producing quality insulation layers; laminating thin films by multicycle introduction of silane family, nitriding and carbon hydride gases; computer controlled apparatus
09/04/2008US20080213478 Vertical cvd apparatus and cvd method using the same
09/04/2008US20080213477 Inline vacuum processing apparatus and method for processing substrates therein
09/04/2008US20080213476 Providing liquid and vapor phase materials during semiconductor manufacturing; removable top wall member allows easy cleaning; maintains purity of chemicals, reduces waste
09/04/2008US20080213470 Method and Device for Marking Long Objects by Sublimation
09/04/2008US20080213365 Vapor-deposited amorphous solid; lower fictive temperature based on enthalpy than liquid-cooled amorphous solid formed by melting vapor-deposited amorphous solid and cooling at1 K/min; opharmaceutical industry, glasses fabricated from pi-conjugated systems for electronics, optoelectronics
09/04/2008US20080213154 Divided Solid Composition Composed of Grains Provided with Continuous Metal Deposition, Method for the Production and Use Thereof in the Form of a Catalyst
09/04/2008US20080212261 Energy storage devices and composite articles associated with the same
09/04/2008US20080210463 Plastics Articles for Metalization with Improved Shaping Properties
09/04/2008US20080210378 Plasma Reactor Having Multiple Antenna Structure
09/04/2008US20080210376 Plasma processing apparatus capable of controlling plasma emission intensity
09/04/2008US20080210290 N-type doped silicon where the reagent chemicals may be SiCl4, H2, and PH3; P-type doping; for P-type doped silicon, either a SiH4, H2, and/or B2H6 gas mixture or a SiH4, H2, and Trimethylboron B(CH3)3 gas is used; photovoltaic panel ; p-i-n or n-i-p junctions
09/04/2008US20080210170 Semiconductor manufacturing equipment and manufacturing method of the same
09/04/2008US20080210169 System for Supporting and Rotating a Susceptor Inside a Treatment Chamber of a Wafer Treating Apparatus
09/04/2008US20080210168 Single chamber, multiple tube high efficiency vertical furnace system
09/04/2008US20080210167 Impurity introducing apparatus and impurity introducing method
09/04/2008US20080210166 Plasma enhanced chemical vapor desposition device having multiple sub-electrodes
09/04/2008US20080210165 Cluster type semiconductor processing apparatus
09/04/2008US20080210164 Heat treatment apparatus and heat treatment method
09/04/2008US20080210163 Independent Radiant Gas Preheating for Precursor Disassociation Control and Gas Reaction Kinetics in Low Temperature CVD Systems
09/04/2008US20080210162 Substrate Processing Apparatus and Substrate Processing System
09/04/2008US20080210086 Preventing fluid dispersion from crystallizing when carrier gas containing dielectric thin film forming materials is injected during metal oxide chemical vapor deposition; reducing clogging and maintenance
09/04/2008US20080209876 a mixture of organic solvents, dispersed silica nanostructure particles and an electrolyte; gels used in electronics, capacitors, batteries, fuel cell membranes, dielectrics, electrochromic devices, dye sensitive solar cells, antistatic coatings or gas separation membranes
09/04/2008DE102007025151A1 Coating method comprises producing plasma jet from process gas and introducing precursor material into it, coating being deposited from jet on to substrate or existing coating on it and substrate being heated
09/04/2008DE102007010071A1 Layer composite for transmission of lacquer on substrate, producing fiber-reinforced plastics, has lacquer coating and interlayer, where lacquer coating has soft or partly hardened or hardened lacquer
09/04/2008CA2676284A1 Instructions for the manufacturing of coatings
09/04/2008CA2670809A1 Method for forming a film on a substrate
09/03/2008EP1963544A1 Coated cutting tool insert
09/03/2008EP1794347A4 Method of modifying a metal substrate to improve surface coverage of a coating
09/03/2008EP1332241B1 Electrostatically clamped edge ring for plasma processing
09/03/2008EP1292726B1 Single crystal diamond prepared by cvd
09/03/2008EP0977906A4 Metered gas control in a substrate processing apparatus
09/03/2008CN101258784A Plasma processing device
09/03/2008CN101257117A Double polar plates for fuel battery and method for making surface azote chromium thin film
09/03/2008CN101257079A Semiconductor layer
09/03/2008CN101256944A Plasma processing apparatus
09/03/2008CN101256940A Gas supply system and integrated unit for semiconductor manufacturing device
09/03/2008CN101256937A Method and apparatus for controlling gas flow to a processing chamber
09/03/2008CN101256936A Method and apparatus for controlling gas flow to a processing chamber
09/03/2008CN101256935A Method and apparatus for controlling gas flow to a processing chamber
09/03/2008CN101256931A Method for manufacturing epitaxial wafers for integrated devices on common compound semiconductor III-V wafer
09/03/2008CN101255553A Plasma auxiliary chemical vapour deposition apparatus
09/03/2008CN101255552A Gas sprayer assembly applied in plasma reaction chamber, manufacture method and renewing reutilization method thereof
09/03/2008CN101255551A Vaporizer and semiconductor processing apparatus
09/03/2008CN101255550A Method for preparing p-type ZnO film by doping Sb
09/03/2008CN101255549A Super-hydrophobic boron nitride film and preparation method thereof
09/03/2008CN101255548A Plasma enhanced cyclic chemical vapor deposition of silicon-containing films
09/03/2008CN100416776C Method for producing hydrogenated silicon oxycarbide films
09/03/2008CN100416775C Method for manufacturing silicon oxide film
09/03/2008CN100416772C Plasma processing apparatus
09/03/2008CN100416767C 晶片加工方法 Wafer processing method
09/03/2008CN100416759C Processing chamber, flat display device production device, plasma treatment method using same
09/03/2008CN100415933C System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
09/03/2008CN100415932C Method for growing zinc oxide film on silicon substrate by using buffer layer
09/03/2008CN100415931C Industrial-application type active magnetic suspension machine tool motor spindle
09/03/2008CN100415927C Fliming clamp mask and its filming apparatus
09/03/2008CN100415636C Method for fabricating three-dimensional microstructure by fib-cvd and drawing system for three-dimensional microstructure
09/03/2008CN100415587C Purgeable container for low vapor pressure chemicals
09/02/2008US7420440 Transmitting filter including SAW resonators
09/02/2008US7420279 Carbon containing silicon oxide film having high ashing tolerance and adhesion
09/02/2008US7420143 Durable graphite connector and method for manufacturing thereof
09/02/2008US7419919 Method of manufacturing semiconductor device
09/02/2008US7419904 Method for forming barrier film and method for forming electrode film
09/02/2008US7419903 Thin films
09/02/2008US7419702 Method for processing a substrate
09/02/2008US7419701 Low-temperature, low-resistivity heavily doped p-type polysilicon deposition
09/02/2008US7419700 Infiltrating a carbon fiber-reinforced porous carbon body with silicon to form a matrix of SiC; treating with a solution of organic IIIb, IVb, IIIa and IVa compound(s); and draining; drying and heating to fill the remaining pores with oxides of the metals
09/02/2008US7419699 CVD process for forming a thin film
09/02/2008US7419698 Precursors for chemical vapor deposition
09/02/2008US7419572 Irradiating a surface of a substrate, a growing surface, and a growing spacing region with ultraviolet light placed in a reaction chamber containing a diluted mixed gas containing boron and nitrogen to grow the boron nitride having a hexagonal 5H or 6H polytypic form on the substrate.
09/02/2008US7419567 Plasma processing apparatus and method
09/02/2008US7419566 Plasma reactor
09/02/2008US7419551 Plasma reactor with apparatus for dynamically adjusting the plasma source power applicator and the workpiece relative to one another
09/02/2008US7419550 Oxidizing method and oxidizing unit of object for object to be processed
09/02/2008US7418921 Plasma CVD apparatus for forming uniform film
09/02/2008CA2471987C Plasma surface processing apparatus