Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
09/2008
09/30/2008US7429543 Method for the production of a substrate
09/30/2008US7429541 Method of forming trench isolation in the fabrication of integrated circuitry
09/30/2008US7429539 Nitriding method of gate oxide film
09/30/2008US7429516 Tungsten nitride atomic layer deposition processes
09/30/2008US7429406 Method of forming thin ruthenium-containing layer
09/30/2008US7429404 Methods of selectively incorporating metals onto substrates
09/30/2008US7429403 Gas distributor for vapor coating method and container
09/30/2008US7429402 Depositing a barrier layer on the substrate, such as a titanium or tantalum containing barrier layer and depositing a ruthenium layer on the barrier layer; depositing a tungsten nucleation layer on the ruthenium layer and depositing a tungsten bulk layer on the tungsten nucleation layer
09/30/2008US7429361 Method and apparatus for providing precursor gas to a processing chamber
09/30/2008US7429306 Plasma processing system
09/30/2008US7429300 Successive vapour deposition system, vapour deposition system, and vapour deposition process
09/30/2008US7429151 Coated inserts for wet milling
09/25/2008WO2008114862A1 Plasma processing apparatus
09/25/2008WO2008114799A1 Plasma treating apparatus, and plasma treating method
09/25/2008WO2008114772A1 Nitride semiconductor substrate
09/25/2008WO2008114740A1 Apparatus for generating gas having extremely low oxygen concentration, processing system, thin film deposition method and inert gas
09/25/2008WO2008114627A1 Antifouling laminated body and front substrate for display
09/25/2008WO2008114475A1 Barrier-film forming apparatus, barrier-film forming method, and barrier-film coated container
09/25/2008WO2008113571A1 Gas distribution system
09/25/2008WO2008073529A3 Integrated semiconductor and transition-metal oxide nanostructures and methods for preparing same
09/25/2008WO2008066438B1 Wear resistant tool for wood chipping
09/25/2008WO2008048247A3 Methods of synthesis of nanotubes and uses thereof
09/25/2008WO2008017382A3 Process for producing components in a medium-containing circuit, in particular a heat exchanger, and component of this type
09/25/2008WO2007145647B1 Apparatus and method for making fullerene nanotube forests, films, threads and composite structures
09/25/2008WO2007046853A3 Systems for discretized processing of substrate regions
09/25/2008US20080234810 Amorphous Glass-Coated Drug Delivery Medical Device
09/25/2008US20080233764 Formation of Gate Insulation Film
09/25/2008US20080233761 Fabrication method of semiconductor integrated circuit device
09/25/2008US20080233723 Plasma doping method and apparatus
09/25/2008US20080233374 Wear Resistant Hard Coating for A Workpiece and Method for Producing the Same
09/25/2008US20080233355 Glass Ceramic Article with Diffusion Barrier and Method for Producing a Glass Ceramic Article with a Diffusion Barrier
09/25/2008US20080233319 Multicolor Development Glass Vessel and Process for Producing the Same
09/25/2008US20080233301 Holder having a frame surrounding substrate and a holding mechanism to keep vertically oriented; emitter, shield,
09/25/2008US20080233288 including oxide, nitride and oxynitride films, by atomic layer deposition (ALD) and plasma enhanced atomic layer deposition (PEALD)
09/25/2008US20080233287 Process and apparatus for organic vapor jet deposition
09/25/2008US20080233286 pressing rolls against the surfaces of pitch infiltrated carbon fiber disks and rotating the disks or the rolls to crush the carbonized pitch
09/25/2008US20080233285 forming an oxide layer on silicon carbide comprising thermally growing an oxide layer on a layer of silicon carbide and annealing the oxide layer in an environment containing nitric oxide; metal oxide semiconductor field effect transistors (MOSFET), used as power sources
09/25/2008US20080233284 Bottom-Up Electrospinning Devices, and Nanofibers Prepared by Using the Same
09/25/2008US20080233283 dehydration modules used for preventing moisture inflow and ventilating deposition chambers, while depositing protective coatings on substrates
09/25/2008US20080233276 Copper (i) compounds useful as deposition precursors of copper thin films
09/25/2008US20080230781 Method of forming an oxygen- or nitrogen-terminated silicon nanocrystalline structure and an oxygen- or nitrogen-terminated silicon nanocrystalline structure formed by the method
09/25/2008US20080230181 Plasma processing apparatus and structure therein
09/25/2008US20080230180 Processing Equipment for Object to be Processed
09/25/2008US20080230008 Plasma species and uniformity control through pulsed vhf operation
09/25/2008US20080230007 Method and apparatus for manufacturing active matrix device including top gate type tft
09/25/2008US20080230004 Apparatus for manufacturing a color conversion filter
09/25/2008US20080229891 Wear resistant hard coating for a workpiece and method for producing the same
09/25/2008DE19581904B4 Entspannungs- oder Schnellverdampfer mit hoher Dichte Relaxation or flasher with high density
09/25/2008DE102008014595A1 Throttle valve for vehicle engines has plastic flap with heat-resistant material on at least surface of its outer circumference
09/25/2008DE102007013636A1 Method for bio-functionalizing a substrate surface comprises carrying out a low frequency low pressure plasma treatment by amination of the surface with ammonia and then treating with a volatile diamine
09/25/2008DE102005042754B4 Verfahren und Vorrichtung zur selektiven Plasmabehandlung von Substraten zur Vorbehandlung vor einem Beschichtungs- oder Bondprozess Method and apparatus for the selective plasma treatment of substrates for the pretreatment prior to coating or bonding process
09/25/2008CA2680858A1 Mechanical parts having increased wear-resistance
09/24/2008EP1973170A1 Stacked photoelectric transducer
09/24/2008EP1971703A2 Catalytic and directional growth of individual carbon nanotubes, and application thereof for cold electron sources
09/24/2008EP1552547A4 In-situ formation of metal insulator metal capacitors cross reference to related applications
09/24/2008EP1275129B1 E-beam/microwave gas jet pecvd method and apparatus for depositing and/or surface modification of thin film materials
09/24/2008CN201121209Y Plasma chemistry vapor deposition apparatus
09/24/2008CN101273154A Method for treating substrate and recording medium
09/24/2008CN101271033A Method for detecting air leakage of physical vapour deposition equipment reaction cavity
09/24/2008CN101270473A Arrangement for moving a carrier in a vacuum chamber
09/24/2008CN101270472A Chemical vapor deposition apparatus for high purity zinc oxide and preparation method thereof
09/24/2008CN101270471A Method for growing nonpolar face GaN thin-film material and uses thereof
09/24/2008CN101270470A Method for synthesizing non-metal catalyst self-organizing growth carbon nano-tube with chemical vapor deposition
09/24/2008CN101270127A Succinimide silver complex with steady organo-phosphines, synthesizing method and application thereof
09/24/2008CN100421215C Method for preparing high electron mobility hydrogenated nano-crystalline silicon thin films
09/24/2008CN100421214C Showerhead assembly and apparatus for manufacturing semiconductor device having the same
09/24/2008CN100421212C Vacuum cavity chamber and vacuum processing device
09/24/2008CN100421211C Apparatus for controlling gas flow in a semiconductor substrate processing chamber
09/24/2008CN100420569C Free-standing (Al, Ga, In)N and parting method for forming same
09/23/2008US7428373 Delivery of solid chemical precursors
09/23/2008US7427568 Method of forming an interconnect structure
09/23/2008US7427426 CVD method for forming metal film by using metal carbonyl gas
09/23/2008US7427425 maintains a desired concentration and phase of gas constituents in the passageway to inhibit adsorption and/or desorption of the precursors in the second end of the passageway
09/23/2008US7427329 Temperature control for single substrate semiconductor processing reactor
09/23/2008US7426900 Integrated electrostatic inductive coupling for plasma processing
09/18/2008WO2008111850A2 Synthesis of molecular metalorganic compounds
09/18/2008WO2008111499A1 Cobalt-containing film-forming material and method for forming cobalt silicide film using the material
09/18/2008WO2008111401A1 Method of forming film of group iii nitride such as gallium nitride
09/18/2008WO2008111231A1 Chemical vapor-phase growing apparatus, method of forming film and process for producing semiconductor device
09/18/2008WO2008111184A1 Semiconductor manufacturing apparatus, method of cleaning the same, and wafer for cleaning
09/18/2008WO2008070181A3 Mid-chamber gas distribution plate, tuned plasma control grid and electrode
09/18/2008WO2008042981A3 Ald of metal silicate films
09/18/2008WO2007002672A9 Atomic layer deposition using alkaline earth metal beta-diketiminate precursors
09/18/2008US20080227303 Vapor deposition process; semiconductor; high dielectric constants,used for capacitor dielectrics and gate dielectrics; random access memory devices
09/18/2008US20080227291 Formation of composite tungsten films
09/18/2008US20080226939 Increased hydrogen content; silicon nitride, silicon oxide, silicon oxynitride, silicon oxide, silicon oxynitride, silicon carbide, silicon carbonitride, or diamond-like carbon; heat resistance; chemical vapor deposition; spattering
09/18/2008US20080226926 Anti-etch layer comprises zirconium oxycarbide
09/18/2008US20080226924 Plastic film, gas barrier layer
09/18/2008US20080226890 Superlattice and Turbostratically Disordered Thermoelectric Materials
09/18/2008US20080226842 Lazy Susan Tool Layout for Light-Activated ALD
09/18/2008US20080226841 Diamond-like carbon films with low dielectric constant and high mechanical strength
09/18/2008US20080226840 Process for synthesizing uniform nanocrystalline films
09/18/2008US20080226839 Surface treatment apparatus and surface treatment method
09/18/2008US20080226838 Uniformly supply reaction gas to substrate, ensure stable film deposition even when electrodes are disposed at positions facing the substrate; plurality of ejection ports arranged to surround an area between first and second plasma electrode
09/18/2008US20080226835 Production Method of Material Film and Production Apparatus of Material Film
09/18/2008US20080226823 Titanium nitride on semiconductor wafer; chemical vapor deposition; titanium tetrachloride metal precursor, ammonia reducing agent; barrier layer, capacitor upper electrode, gate electrode, contact
09/18/2008US20080226822 Titanium nitride film; titanium chloride precursor; ammonia reducing agent; oxygen, water, oxidants; thermal CVD means forming a film by thermochemical reaction without using a plasma
09/18/2008US20080226821 Metal halide reactor for CVD and method
09/18/2008US20080226820 Organo metallic precursors tetrakisdimethylamino hafnium and tetrakisethylmethylamino hafnium; tetrakisdimethylamino zirconium and tetrakisethylmethylamino zirconium; mix first solid with higher vapor pressure, with second at room temperature; maintain vacuum
09/18/2008US20080226819 Methods of making crystalline titania coatings