Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
12/2008
12/31/2008CN100447295C Installation in which an operation is performed requiring control over the atmosphere inside a chamber
12/31/2008CN100447294C Method and apparatus for growing thick nano diamond film
12/30/2008US7470919 Substrate support assembly with thermal isolating plate
12/30/2008US7470637 Film formation apparatus and method of using the same
12/30/2008US7470632 Method of depositing a silicon dioxide comprising layer doped with at least one of P, B and Ge
12/30/2008US7470611 In situ deposition of a low K dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
12/30/2008US7470595 Oxidizing a metal layer for a dielectric having a platinum electrode
12/30/2008US7470474 magnetic heads comprising nonmagnetic substrate for controlling the polarity of magnetic layers and protective coatings, having enhanced thermal fluctuation, a sufficient read/write property for high density recording and a high signal/noise ratio during the reproduction
12/30/2008US7470470 Mixing different chemical precursors together in a chamber during a single pulse step in atomic layer deposition (ALD) to form a mono-layer having multiple chemical compounds on the surface; e.g. dielectric hafnium silicon nitride from hafnium dialkyl amides, tetrakis(dialkylamino)silane and ammonia
12/30/2008US7470454 Non-thermal process for forming porous low dielectric constant films
12/30/2008US7470450 Forming a silicon nitride film
12/30/2008US7470329 Method and system for nanoscale plasma processing of objects
12/30/2008US7470296 Coated insert and method of making same
12/30/2008US7469654 Plasma processing device
12/25/2008US20080318443 Plasma enhanced cyclic deposition method of metal silicon nitride film
12/25/2008US20080318440 Porous organosilicate layers, and vapor deposition systems and methods for preparing same
12/25/2008US20080318432 Reactor with heated and textured electrodes and surfaces
12/25/2008US20080318431 Shower Plate and Plasma Treatment Apparatus Using Shower Plate
12/25/2008US20080318429 Fabrication method of semiconductor integrated circuit device
12/25/2008US20080318423 Process for producing metal oxide films at low temperatures
12/25/2008US20080318085 Method of forming a protective film and a magnetic recording medium having a protective film
12/25/2008US20080318049 Single-Walled Carbon Nanotube and Aligned Single-Walled Carbon Nanotube Bulk Structure, and Their Production Process, Production Apparatus and Application Use
12/25/2008US20080318033 Coated Substrate with a Temporary Protective Layer and Method for Production Thereof
12/25/2008US20080318023 Diamond Shell Fabricated by Using Porous Particle and the Fabrication Method Thereof
12/25/2008US20080317976 forms amorphous carbon films on surfaces of conductive plate-like workpieces by a plasma CVD method; stable glow discharge can be obtained for each of the plate-like workpieces by making the sheath width equal to or less than the interval between the facing surfaces of two adjoining plate-like workpieces
12/25/2008US20080317975 Cleaning Method and Plasma Processing Method
12/25/2008US20080317973 Diffuser support
12/25/2008US20080317967 Deposition of Polymeric Films
12/25/2008US20080317956 Device and Method for Continuous Chemical Vapour Deposition Under Atmospheric Pressure and Use Thereof
12/25/2008US20080317955 Precursors include hexamethyldisilazane, tetramethyldisilazane, bisdiethylaminosilane and hexakis(ethylamino)disilane; chemisorption; semiconductors, integrated circuits
12/25/2008US20080317954 Pulsed deposition process for tungsten nucleation
12/25/2008US20080317654 Boron Suboxide Composite Material
12/25/2008US20080317581 Vacuum Processing Apparatus
12/25/2008US20080315201 Apparatus for Producing Electronic Device Such as Display Device, Method of Producing Electronic Device Such as Display Device, and Electronic Device Such as Display Device
12/25/2008US20080315188 Apparatus and method for depositing thin film
12/25/2008US20080315127 Ion Implanter Operating in Pulsed Plasma Mode
12/25/2008US20080314523 Gas supply mechanism and substrate processing apparatus
12/25/2008US20080314521 Device with self aligned gaps for capacitance reduction
12/25/2008US20080314321 Plasma processing apparatus
12/25/2008US20080314320 Chamber Mount for High Temperature Application of AIN Heaters
12/25/2008US20080314319 Susceptor for improving throughput and reducing wafer damage
12/25/2008US20080314317 Showerhead design with precursor pre-mixing
12/25/2008US20080314311 Hvpe showerhead design
12/24/2008WO2008157069A1 Low temperature sacvd processes for pattern loading applications
12/24/2008WO2008156958A2 Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings
12/24/2008WO2008156744A1 Methods and apparatus for reducing the consumption of reagents in electronic device manufacturing processes
12/24/2008WO2008156631A2 Reactive flow deposition and synthesis of inorganic foils
12/24/2008WO2008156604A1 Vapor-deposited biocompatible coatings which adhere to various plastics and metal
12/24/2008WO2008156583A1 Gas-phase functionalization of surfaces including carbon-based surfaces
12/24/2008WO2008156562A2 Showerhead electrode assemblies for plasma processing apparatuses
12/24/2008WO2008156031A1 Vacuum processing apparatus
12/24/2008WO2008155087A2 Plasma reactor, and method for the production of monocrystalline diamond layers
12/24/2008WO2008011306A3 Substrate support with adjustable lift and rotation mount
12/24/2008WO2007142690A3 Apparatus and process for plasma-enhanced atomic layer deposition
12/24/2008EP2006893A1 Processing apparatus and processing method
12/24/2008EP2006414A2 Atomic layer growing apparatus
12/24/2008EP2006413A1 Coated cemented carbide for die and mould applications
12/24/2008EP2006349A1 Beam detecting member and beam detector using it
12/24/2008EP2006040A2 Cutting tool, method for producing same and cutting method
12/24/2008EP2004873A1 Process for the treatment of metal coated particles
12/24/2008EP2004872A1 Novel pore-forming precursors composition and porous dielectric layers obtained there from
12/24/2008EP2004660A1 Pentakis(dimethylamino) disilane precursor comprising compound and method for the preparation thereof
12/24/2008EP1794346A4 Apparatus and method for depositing a material on a substrate
12/24/2008EP1723265A4 High throughput surface treatment on coiled flexible substrates
12/24/2008EP1613789B1 Volatile copper(i) complexes for deposition of copper films by atomic layer deposition
12/24/2008EP1532290B1 Systems and methods for forming zirconium and/or hafnium-containing layers
12/24/2008EP1523763A4 Molecular layer deposition of thin films with mixed components
12/24/2008EP1192293B1 CVD OF INTEGRATED Ta AND TaNx FILMS FROM TANTALUM HALIDE PRECURSORS
12/24/2008EP1117854B1 Method and apparatus for forming polycrystalline and amorphous silicon films
12/24/2008DE102007028986A1 Method for production of thin-walled endless belt for devices for processing flat material layer, involves forming endless belt smoothly on surface by laying material layer with material laying unit
12/24/2008CN101331596A Gas introduction device, method of manufacturing the same, and processing device
12/24/2008CN101331246A Method for coating a blade and blade of a gas turbine
12/24/2008CN101330044A Method of cleaning surface of semiconductor substrate, method of manufacturing thin film, method of manufacturing semiconductor device, and semiconductor device
12/24/2008CN101330032A Plasma processing apparatus and transition chamber thereof
12/24/2008CN101330016A Method for depositing atomic layer and semiconductor device formed by the same
12/24/2008CN101330015A Method for depositing atomic layer and semiconductor device formed by the same
12/24/2008CN101330014A Method for depositing atomic layer and semiconductor device formed by the same
12/24/2008CN101329998A Semiconductor treating device
12/24/2008CN101329982A Apparatus for heat treatment of wafer
12/24/2008CN101328592A Conductive diamond electrode structure and method for electrolytic synthesis of fluorine-containing material
12/24/2008CN101328581A Plasma processing apparatus and substrate carrier plate thereof
12/24/2008CN101328580A Method for depositing thin film using high density plasma chemical vapor deposition
12/24/2008CN101328579A HVPE showerhead design
12/24/2008CN101328578A Plasma reinforcement cyclic deposition method for depositing a metal silicon nitride film
12/24/2008CN101328577A Method for preparing airplane carbon brake disc by chemical vapor deposition
12/24/2008CN101328188A Group II metal precursors for depositing multi-component metal oxide films
12/24/2008CN100446218C Method of forming metal film and tungsten film
12/24/2008CN100446195C Method for improving FSG caulking property
12/24/2008CN100446193C Method for forming organic/inorganic hybrid insulation
12/24/2008CN100445423C Method for forming thin film, apparatus for forming thin film, and method for monitoring thin film forming process
12/24/2008CN100445422C Organic zinc source for preparing zinc oxide thin film and its preparing method
12/24/2008CN100445250C Method of producing tantalum and niobium alkoxides
12/24/2008CN100445023C Surface-coated cermet cutting tool with hard coating layer having excellend chipping resistance
12/24/2008CN100445000C Coated cutting insert for rough turning
12/23/2008US7468790 Detecting gaseous species by light-emission spectrometry with spectrum processing
12/23/2008US7468311 Deposition of silicon-containing films from hexachlorodisilane
12/23/2008US7468290 Depositing the organosilicate film onto substrate via chemical vapor deposition of chemical reagent comprising a structure-former precursor to provide the organosilicate film having a first material hardness and a first elastic modulus; exposing the organosilicate film to an ultraviolet radiation source
12/23/2008US7468108 Chemisorbing layer of metal precursor at least one monolayer thick on substrate, treating chemisorbed layer at a temperature of 100-190 degrees C. with an oxidant effective to remove the non-metal components to form a treated layer consisting essentially of metal; ozone used as oxidant
12/23/2008US7468104 Chemical vapor deposition apparatus and deposition method
12/23/2008US7467598 System for, and method of, etching a surface on a wafer