Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
01/2009
01/07/2009EP2010694A1 Apparatus and method for controlling the surface temperature of a substrate in a process chamber
01/07/2009EP2010693A1 Cvd reactor having a process chamber lid which can be lowered
01/07/2009EP1941074B1 Cooled device for plasma depositing a barrier layer onto a container
01/07/2009EP1935004B1 Process and device for the plasma treatment of objects
01/07/2009EP1381710B1 Process and device for the deposition of a microcrystalline silicon layer on a substrate
01/07/2009EP1230667B1 Method and apparatus for controlling the volume of a plasma
01/07/2009EP1214459B1 Pulsed plasma processing method and apparatus
01/07/2009EP1060285A4 Apparatus and method for depositing a semiconductor material
01/07/2009CN101341276A Method and apparatus for semiconductor processing
01/07/2009CN101341155A Hafnium compound, hafnium thin film-forming material and method for forming hafnium thin film
01/07/2009CN101339967A Two-chamber alternative amorphous silicon photovoltaic film chemical vapour deposition equipment
01/07/2009CN101339897A Vacuum treatment device, vacuum treatment method and storage medium
01/07/2009CN101339895A Gas distribution device and plasma processing apparatus applying the same
01/07/2009CN101338415A Deposition process of plasma enhanced induction vaporizing silicon film
01/07/2009CN101338414A Thermal batch reactor with removable susceptors
01/07/2009CN101338413A Remote inductively coupled plasma source for cvd chamber cleaning
01/07/2009CN101337654A Micron grade blocky silicone base composite body assembled by silicon oxide or willemite nano-wires and method for preparing same
01/07/2009CN100449792C Light generating device and manufacturing method thereof
01/07/2009CN100449708C Substrate processing apparatus
01/07/2009CN100449689C A method of forming a teos cap layer at low temperature and reduced deposition rate
01/07/2009CN100448661C 层压体 Laminate
01/07/2009CN100448576C Coated cement cutting tool with a chipping resistant, hard coating layer
01/06/2009US7473994 Method of producing insulator thin film, insulator thin film, method of manufacturing semiconductor device, and semiconductor device
01/06/2009US7473662 Yttrium metal-doped aluminum oxide consisting of yttrium, aluminum, and oxygen; mole ratio of the yttrium to aluminum is 1:99 to 10:90; semiconductor substrate; formed by chemical vapor deposition or atomic layer deposition
01/06/2009US7473653 Forming precursor film on substrate, film comprising a porogen and a structure former, wherein the structure former has one or more carbon-carbon double or triple bonds and porogen has at least one bulky organic functional group and porogen precursor is a polyfunctional cyclic non-aromatic compound
01/06/2009US7473638 Plasma-enhanced cyclic layer deposition process for barrier layers
01/06/2009US7473436 Dry functionalization process in which precursor gas (e.g., H2 or F2 or CnHm) is irradiated to provide a cold plasma; particles produced are directed toward an array of CNTs in another chamber at or below room temperature while suppressing transport of ultraviolet radiation; applied magnetic field
01/06/2009US7473332 Method for processing semiconductor
01/06/2009US7473316 Method of growing nitrogenous semiconductor crystal materials
01/02/2009DE102007028293A1 Plasmareaktor und Verfahren zur Herstellung einkristalliner Diamantschichten A plasma reactor and method for producing single-crystal diamond films
01/01/2009US20090004887 Apparatus and method for deposition of protective film for organic electroluminescence
01/01/2009US20090004884 Oxidizing method and oxidizing apparatus
01/01/2009US20090004874 Inductively coupled dual zone processing chamber with single planar antenna
01/01/2009US20090004858 Tantalum amide complexes for depositing tantalum-containing films, and method of making same
01/01/2009US20090004836 Plasma doping with enhanced charge neutralization
01/01/2009US20090004830 Device and method for depositing especially doped layers by means of OVPD or the like
01/01/2009US20090004463 Reducing resistivity in metal interconnects using interface control
01/01/2009US20090004405 Thermal Batch Reactor with Removable Susceptors
01/01/2009US20090004404 Method for manufacturing a preform for optical fibres by means of a vapour deposition process
01/01/2009US20090004386 Protective Coating of Silver
01/01/2009US20090004385 Copper precursors for deposition processes
01/01/2009US20090004384 Processing Assembly and Method for Processing a Wafer in Such a Processing Assembly
01/01/2009US20090004383 Process for forming the strontium-containing thin film
01/01/2009US20090004363 Plasma enhanced chemichal vapor deposition apparatus and method
01/01/2009US20090004100 chemical vapor deposition
01/01/2009US20090001524 Generation and distribution of a fluorine gas
01/01/2009US20090000740 Vaporizer and Processor
01/01/2009US20090000739 Vacuum processing apparatus
01/01/2009US20090000738 Arrays of inductive elements for minimizing radial non-uniformity in plasma
01/01/2009US20090000663 Dye-sensitized solar cell and method of manufacturing the same
01/01/2009US20090000552 Substrate holder and vacuum film deposition apparatus
01/01/2009US20090000551 Methods and apparatus for depositing a uniform silicon film with flow gradient designs
01/01/2009US20090000547 Semiconductor device fabrication method and fabrication apparatus
12/2008
12/31/2008WO2009002339A1 Light-reflective articles and methods for making them
12/31/2008WO2009002028A2 Method and apparatus for depositing thin film
12/31/2008WO2009001924A1 Resin substrate
12/31/2008WO2009001896A1 Filming method, and treating system
12/31/2008WO2009001833A1 Epitaxial wafer and method for manufacturing the same
12/31/2008WO2008067379A3 System and method for depositing a gaseous mixture onto a substrate surface using a showerhead apparatus
12/31/2008WO2007140421A9 Process chamber for dielectric gapfill
12/31/2008WO2007118252B1 System architecture and method for solar panel formation
12/31/2008WO2007118252A4 System architecture and method for solar panel formation
12/31/2008EP2009140A1 Method for microcrystalline silicon film formation and solar cell
12/31/2008EP2009139A1 Cyclic Deposition Method for Depositing a Metal Silicon Nitride Film
12/31/2008EP2009138A1 Atomic layer epitaxy processed insulation
12/31/2008EP2009137A1 Liquid material vaporizer
12/31/2008EP2009136A2 Manufacturing method of optical member from silica or glass
12/31/2008EP2009135A1 Base substrate for epitaxial diamond film, method for manufacturing the base substrate for epitaxial diamond film, epitaxial diamond film manufactured by the base substrate for epitaxial diamond film, and method for manufacturing the epitaxial diamond film
12/31/2008EP2008297A1 Epitaxial growth of iii-nitride compound semiconductors structures
12/31/2008EP2007932A1 Articles with two crystalline materials and method of making same
12/31/2008EP2007923A1 Etching process
12/31/2008EP2007919A2 Plasma deposition apparatus and method for making solar cells
12/31/2008EP2007918A2 Vacuum pumping system
12/31/2008EP2007917A1 Method for depositing silicon nitride films and/or silicon oxynitride films by chemical vapor deposition
12/31/2008EP2007916A2 Mirror magnetron plasma source
12/31/2008EP2007499A1 Method and device for reducing formation of particulate matter in gas streams
12/31/2008EP1475822B1 Cleaning gas and etching gas
12/31/2008EP1391941B1 Production method for a light emitting element
12/31/2008EP1373130B1 Process and apparatus for the production of carbon nanotubes
12/31/2008EP0871795B1 A scalable helicon wave plasma processing device with a non-cylindrical source chamber
12/31/2008CN101336470A Plasma etching method
12/31/2008CN101336467A Plasma processing apparatus and plasma processing method
12/31/2008CN101335227A Polyceramic e-chuck
12/31/2008CN101335192A Substrate processing apparatus and shower head
12/31/2008CN101333666A Plasma generating method, cleaning method, substrate processing method
12/31/2008CN101333654A Layer forming method using plasma discharge
12/31/2008CN101333653A Plasma chemical vapor deposition process for preventing generation of bag type defects
12/31/2008CN101333652A Method for preparing SixOyFz coatings on organic precoated metal plate
12/31/2008CN101333651A Diffuser support
12/31/2008CN101333650A Method for uniformly and controllably coating conducting carbon layer at surface of LiFePO4 granule surface
12/31/2008CN101333649A Prevention and maintain cover
12/31/2008CN101333648A Atomic layer deposition device and Atomic layer deposition method
12/31/2008CN100448327C System and method for lamp split zone control
12/31/2008CN100447962C Method for manufacturing semiconductor device and substrate processing system
12/31/2008CN100447961C Method of forming fluorinated carbon film
12/31/2008CN100447944C Dry device and dry method for semiconductor equipment
12/31/2008CN100447935C Apparatus and methods for minimizing arcing in a plasma processing chamber
12/31/2008CN100447934C Vacuum cathode arc straight tube filter
12/31/2008CN100447297C Microwave plasma processing method
12/31/2008CN100447296C Method for forming thin film, article having thin film, optical film, dielectric coated electrode, and plasma discharge processor