Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
03/2009
03/19/2009US20090075488 Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same
03/19/2009US20090075361 Microfluidic Device and Method of Manufacturing the Microfluidic Device
03/19/2009US20090075121 Apparatus and method for forming carbon protective layer
03/19/2009US20090075119 Tunable low loss material compositions and methods of manufacture and use therefore
03/19/2009US20090075115 Multi-layered thermal barrier coating
03/19/2009US20090075035 Preparing nanoparticles and carbon nanotubes
03/19/2009US20090075024 Method for producing a thermal barrier coating and thermal barrier coating for a component part
03/19/2009US20090075023 Method for producing thermal barrier coating and a thermal barrier coating
03/19/2009US20090074987 Laser decal transfer of electronic materials
03/19/2009US20090074986 Method of preventing abnormal large grains from being included into thin nano-crystalline diamond film
03/19/2009US20090074983 Methods of atomic layer deposition using titanium-based precursors
03/19/2009US20090074965 useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices; bis(pentamethylcyclopentadienyl)strontium
03/19/2009US20090074964 Method and apparatus for removing substances from gases
03/19/2009US20090074963 Oxide films, a method of producing the same and structures having the same
03/19/2009US20090074962 Method for the protection of an optical element of a lithographic apparatus and device manufacturing method
03/19/2009US20090074948 Re-transfer printing machine and method thereof
03/19/2009US20090074947 Method for coating film formation, apparatus for coating film formation, and method for toning coating material preparation
03/19/2009US20090074903 Thermal insulation stamper and production method of same
03/19/2009US20090074520 Coated Cutting Insert for Milling Applications
03/19/2009US20090072327 Semiconductor Storage Device and Method for Manufacturing the Same
03/19/2009US20090071935 Patterned magnetic recording medium and method of manufacturing the same
03/19/2009US20090071934 Crystalline aluminum oxide layers having increased energy band gap, charge trap layer devices including crystalline aluminum oxide layers, and methods of manufacturing the same
03/19/2009US20090071931 Interconnect supported fuel cell assembly, preform and method of fabrication
03/19/2009US20090071605 Method for depositing a film using a charged particle beam, method for performing selective etching using the same, and charged particle beam equipment therefor
03/19/2009US20090071505 Cleaning method and substrate processing apparatus
03/19/2009US20090071407 Semiconductor processing parts having apertures with deposited coatings and methods for forming the same
03/19/2009US20090071406 Cooled backing plate
03/19/2009US20090071405 Substrate Processing Apparatus
03/19/2009US20090071404 Method of forming titanium film by CVD
03/19/2009US20090071403 Pecvd process chamber with cooled backing plate
03/19/2009US20090071402 Metal film vapor phase deposition method and vapor phase deposition apparatus
03/19/2009US20090071399 Apparatus for treating workpieces
03/18/2009EP2037721A1 Plasma processing apparatus, plasma processing method and photoelectric conversion element
03/18/2009EP2037491A1 METHOD OF FORMING TaSiN FILM
03/18/2009EP2037002A1 Method and device for separating chalkogens
03/18/2009EP2036859A2 Method for producing polycrystalline silicon
03/18/2009EP2036857A2 Method for producing trichlorosilane
03/18/2009EP2036120A2 A novel deposition-plasma cure cycle process to enhance film quality of silicon dioxide
03/18/2009EP2035597A2 Cleaning device and cleaning process for a plasma reactor
03/18/2009EP2035596A1 Plasma immersion ion processing for coating of hollow substrates
03/18/2009EP2000296A9 Transparent barrier sheet and production method of transparent barrier sheet
03/18/2009EP1781836A4 Plasma enhanced chemical vapor deposition system for forming carbon nanotubes
03/18/2009EP1361604B1 Device and method for treatment
03/18/2009CN101390199A Method for forming amorphous carbon film and method for manufacturing semiconductor device using same
03/18/2009CN101389787A Multiple precursor dispensing apparatus
03/18/2009CN101389786A Processing assembly and method for processing a wafer in such a processing assembly
03/18/2009CN101389785A Methods for preparation of high-purity polysilicon rods using a metallic core means
03/18/2009CN101388359A Adhesion improvement for low k dielectrics to conductive materials
03/18/2009CN101388330A Semiconductor manufacture device and method by heating substrate
03/18/2009CN100470892C Silicon composite, making method, and non-aqueous electrolyte secondary cell negative electrode material
03/18/2009CN100470752C Apparatus for processing substrate
03/18/2009CN100470726C Method for depositing high-quality microcrystalline semiconductor materials
03/18/2009CN100470715C Substrate support and method of fabricating the same
03/18/2009CN100469944C Thin film forming method, optical film, polarizing film and image display
03/18/2009CN100469943C Device and method for processing workpiece
03/18/2009CN100469942C Electroplating solution containing organic acid complexing agent
03/18/2009CN100469720C Method and system for coating a glass contacting surface with a thermal barrier and lubricous coating
03/17/2009US7504279 Method for producing semi-conducting devices and devices obtained with this method
03/17/2009US7504152 A particle with a base having a shape of an inverted truncated right circular cone with a diameter of 1 nm to 100 microns, a height of 5 nm to 1000 microns, and aspect ratio of 5 to 5000; capable of forming a planar array, a two-dimensional lattice, or a nanotube
03/17/2009US7504136 Method and system for forming a film of material using plasmon assisted chemical reactions
03/17/2009US7504078 Hollow reactor; substrate conveyor; injector for delivering a hydrocarbon feed solution dispersed in an inert carrier gas; aligned carbon nanotubes are formed on the substrate; does not require specialized patterned substrates, less labor required, industrial scale
03/17/2009US7504007 thin soft magnetic film combines a high magnetization with an insulating character. The film is formed by nitriding Fe-rich ferromagnetic nanograins immersed in an amorphous substrate. A selective oxidation of the amorphous substrate is then performed.
03/17/2009US7503980 Substrate supporting apparatus
03/12/2009WO2009033067A2 Combinatorial process system
03/12/2009WO2009032488A1 Improved low k porous sicoh dielectric and integration with post film formation treatment
03/12/2009WO2009032095A1 Method and apparatus for diagnosing status of parts in real time in plasma processing equipment
03/12/2009WO2009031886A2 Method and apparatus for atomic layer deposition using an atmospheric pressure glow discharge plasma
03/12/2009WO2009031696A1 Composite substrate for forming light emitting element and method for manufacturing the composite substrate
03/12/2009WO2009031582A1 Method for manufacturing semiconductor device
03/12/2009WO2009031423A1 Method for producing metal oxide semiconductor thin film and thin film transistor using the same
03/12/2009WO2009031419A1 Vacuum processing system
03/12/2009WO2009031413A1 Top panel and plasma processing apparatus using the same
03/12/2009WO2009030751A2 Part for a hydraulic circuit of a machine for preparing drinks that comprises a coating
03/12/2009WO2009030438A2 Coated engine component for a gas turbine
03/12/2009US20090068849 Multi-region processing system and heads
03/12/2009US20090068845 Low contamination components for semiconductor processing apparatus and methods for making components
03/12/2009US20090068832 Thin films
03/12/2009US20090068556 Battery-operated wireless-communication apparatus and method
03/12/2009US20090068529 Silicified electrolyte material for fuel cell, method for its preparation and fuel cell using same
03/12/2009US20090068494 Metal Strip Product, Such as an Electrical Contact Spring, and the Manufacturing Thereof
03/12/2009US20090068451 Coated articles
03/12/2009US20090068425 Decorated resin molded article and method for producing the same
03/12/2009US20090068358 Plastic code wheel/strip fabrication method
03/12/2009US20090068357 Magnesium-titanium solid solution alloys
03/12/2009US20090068356 High productivity plasma processing chamber
03/12/2009US20090068355 Device and method for fabricating thin films by reactive evaporation
03/12/2009US20090068344 System and method for manufacturing thin film electrical devices
03/12/2009US20090068082 Synthesis and characterization of a highly stable amorphous silicon hydride as the product of a catalytic hydrogen plasma reaction
03/12/2009US20090065485 Plasma System
03/12/2009US20090065480 Plasma Processing Apparatus
03/12/2009US20090065147 Plasma processing apparatus
03/12/2009US20090065146 Plasma processing apparatus
03/12/2009US20090065066 Method for vaporizing liquid material capable of vaporizing liquid material at low temperature and vaporizer using the same
03/12/2009US20090064935 Cvd reactor having a process-chamber ceiling which can be lowered
03/12/2009US20090064934 Source gas flow path control in pecvd system to control a by-product film deposition on inside chamber
03/12/2009US20090064933 Film coating system and isolating device thereof
03/12/2009US20090064932 Apparatus for HDP-CVD and method of forming insulating layer using the same
03/12/2009DE112007000933T5 Katalytische, chemische Gasphasenabscheidungsvorrichtung Catalytic, chemical gas-phase deposition apparatus
03/12/2009DE112005001387T5 Anwendung einer vom Waferemissionsvermögen unabhängigen aktiven Wafertemperaturregeleinrichtung Application independent from the wafer emissivity active wafer temperature control device
03/12/2009DE102007043156A1 Verringerung des Verbrauchs von Prozessgasen bei der chemischen Gasphasenabscheidung von siliziumhaltigen Schichten bei der als Reaktionsprodukt neben der abzuscheidenden Schicht Wasserstoff entsteht Reducing the consumption of process gases in the chemical vapor deposition of silicon-containing layers in the formed as a reaction product in addition to the layer to be deposited is hydrogen