Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
02/2009
02/04/2009CN100459148C Semiconductor device
02/04/2009CN100459065C Silicon nitride film and manufacturing method thereof
02/04/2009CN100459063C Hi-k dielectric layer deposition method on substrate
02/04/2009CN100459062C Production of insulating film with low dielectric constant
02/04/2009CN100459059C Plasma processing method and apparatus
02/04/2009CN100459048C Vacuum chamber for vacuum processing device
02/04/2009CN100459033C Filming method and device
02/04/2009CN100459032C Technique for reducing particle in reaction chamber
02/04/2009CN100459028C Substrate board treatment device and reaction container
02/04/2009CN100457441C Nano-multilayered structures, components and associated methods of manufacture
02/04/2009CN100457250C Preparing method and device of composite material compounding graphite and catalyst for synthesizing diamond
02/03/2009US7486020 Diffusion barrier coatings having graded compositions and devices incorporating the same
02/03/2009US7485583 Method for fabricating superlattice semiconductor structure using chemical vapor deposition
02/03/2009US7485570 Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
02/03/2009US7485553 Process for manufacturing a semiconductor device
02/03/2009US7485349 Thin film forming method
02/03/2009US7485340 Thin metal films by atomic layer deposition: tungsten nucleation layer over a silicon wafer; copper film from CuCl and triethylboron; vapor phase pulses in inert gas
02/03/2009US7485339 Injecting purging gas; suppress diffusion; efficienct; thick films more than 3 mu m in thickness of high quality with excellent reproducibility, uniformity, controllability, and high growth rate using a protective curtain formed by a mutual diffusion-suppressing action between purge gas and reactive gas
02/03/2009US7485338 Transferring a precursor vapor from a precursor vaporization system to an intermediate precursor chamber, collecting the precursor vapor in the intermediate precursor chamber, flowing a process gas containing the collected precursor vapor to a process chamber, exposing a substrate to deposit layer
02/03/2009US7485239 Component of glass-like carbon for CVD apparatus and process for production thereof
02/03/2009US7485205 Method, arrangement and electrode for generating an atmospheric pressure glow plasma (APG)
02/03/2009US7485204 ECR plasma source and ECR plasma device
02/03/2009US7485190 Apparatus for heating a substrate in a variable temperature process using a fixed temperature chuck
02/03/2009US7485189 Thin film deposition device using an FTIR gas analyzer for mixed gas supply
02/03/2009US7484672 Coatings for use in fuel injector components
02/03/2009US7484513 Removing, e.g., Ti, films on a vessel wall by evacuating a plasma generating chamber remote from the vessel; supplying a cleaning gas mixture of inert, fluorine and chlorine gases to the chamber; microwaving for form a plasma; and feeding plasma into the heated vessel to react with/decompose the film
02/03/2009US7484473 Suspended gas distribution manifold for plasma chamber
02/03/2009CA2443005C Method for treating ferrous alloy parts in order to improve the rubbing properties thereof without causing hardness loss or deformation
02/03/2009CA2405176C Process for preparing carbon nanotubes
01/2009
01/29/2009WO2009015271A1 Methods of forming thin metal-containing films by cvd or ald using iron, ruthenium or osmium cyclopentadiene carbon monoxide complexes
01/29/2009WO2009015270A1 Organometallic precursors for use in chemical phase deposition processes
01/29/2009WO2009014741A2 A plasma processing method for forming a film and an electronic component manufactured by the method
01/29/2009WO2009014144A1 Semiconductor substrate manufacturing method
01/29/2009WO2009014099A1 Method and apparatus for depositing nitride film
01/29/2009WO2009013984A1 AlN MEMBER FOR COMPOUND SEMICONDUCTOR VAPOR DEPOSITION APPARATUS AND METHOD FOR PRODUCING COMPOUND SEMICONDUCTOR USING THE SAME
01/29/2009WO2009013914A1 Sic epitaxial substrate and process for producing the same
01/29/2009WO2009013721A1 Ruthenium precursor with two differing ligands for use in semiconductor applications
01/29/2009WO2009013714A1 Air brazeable material
01/29/2009WO2009013296A1 Method and device for the infiltration of a structure of a porous material by chemical vapour deposition
01/29/2009WO2009013242A1 Method for providing a crystalline germanium layer on a substrate
01/29/2009WO2009013034A1 Method for providing a crystalline germanium layer on a substrate
01/29/2009WO2008111850A3 Synthesis of molecular metalorganic compounds
01/29/2009WO2008101704A3 Plasma-deposited electrically insulating, diffusion-resistant and elastic layer system
01/29/2009WO2007117803A3 Method for introducing a precursor gas to a vapor deposition system
01/29/2009US20090029564 Plasma treatment apparatus and plasma treatment method
01/29/2009US20090029562 Film formation method and apparatus for semiconductor process
01/29/2009US20090029561 Semiconductor processing apparatus
01/29/2009US20090029509 Substrate processing apparatus and method and a manufacturing method of a thin film semiconductor device
01/29/2009US20090029502 Apparatuses and methods of substrate temperature control during thin film solar manufacturing
01/29/2009US20090029178 Process for the modification of substrate surfaces through the deposition of amorphous silicon layers followed by surface functionalization with organic molecules and functionalized structures
01/29/2009US20090029132 Coated hard metal member
01/29/2009US20090029067 Method for producing amorphous carbon coatings on external surfaces using diamondoid precursors
01/29/2009US20090029064 Apparatus and method for making nanoparticles using a hot wall reactor
01/29/2009US20090029048 Method of thermal stress compensation
01/29/2009US20090029047 Film-forming apparatus and film-forming method
01/29/2009US20090029046 Substrate processing apparatus, method for processing substrate, and storage medium
01/29/2009US20090028741 Insert for metal cutting
01/29/2009US20090026917 Light-emitting element, light-emitting device, and vapor deposition apparatus
01/29/2009US20090026587 Gradient deposition of low-k cvd materials
01/29/2009US20090026459 Epitaxial and polycrystalline growth of si1-x-ygexcy and si1-ycy alloy layers on si by uhv-cvd
01/29/2009US20090026421 Optimized laser pyrolysis reactor and methods therefor
01/29/2009US20090026249 Method for soldering two components together by using a solder material
01/29/2009US20090026072 Al-ni-la-si system al-based alloy sputtering target and process for producing the same
01/29/2009US20090026067 Droplet Removing Device and Method in Plasma Generator
01/29/2009US20090025877 Flat panel display manufacturing apparatus
01/29/2009US20090025751 Method of removing contaminants from a coating surface comprising an oxide or fluoride of a group IIIB metal
01/29/2009US20090025641 METHOD, SYSTEM, AND APPARATUS FOR THE GROWTH OF ON-AXIS SiC AND SIMILAR SEMICONDUCTOR MATERIALS
01/29/2009US20090025640 Formation of cigs absorber layer materials using atomic layer deposition and high throughput surface treatment
01/29/2009US20090025639 Gas inlet element for a cvd reactor
01/29/2009US20090025632 Vacuum treatment installation for the production of a disk-shaped workpiece based on a dielectric substrate
01/29/2009US20090025465 Miniaturized Spring Element and Method for Producing the Spring Element
01/29/2009DE102007000512B3 Hard-coated body with a multi-layer system for tools and components such as drills, millers and indexable inserts, comprises a bonding layer applied on the body, a single- or multi-phase hard layer, and a phase gradient layer
01/28/2009EP2019437A1 Iii nitride compound semiconductor laminated structure
01/28/2009EP2019153A1 Gas supply pipe for plasma treatment
01/28/2009EP2019152A1 Method of preparing thin layers of nanoporous dielectric materials
01/28/2009EP2019080A2 Method of controlling film stress in MEMS devices
01/28/2009EP2018642A2 Low temperature deposition of phase change memory materials
01/28/2009CN101356631A Film position adjusting method, memory medium and substrate processing system
01/28/2009CN101356630A Processing apparatus
01/28/2009CN101356626A Metal film decarbonizing method, film forming method and semiconductor device manufacturing method
01/28/2009CN101356620A Positive displacement pumping chamber
01/28/2009CN101356298A Film-forming apparatus, exhaust system structure thereof, and method for processing exhaust gas
01/28/2009CN101356181A Organic ruthenium compound for chemical vapor deposition, and chemical vapor deposition method using the organic ruthenium compound
01/28/2009CN101355025A Method of manufacturing thin film semiconductor device
01/28/2009CN101355022A Film formation method and apparatus for semiconductor process
01/28/2009CN101355018A Gas-tight module and exhaust method therefor
01/28/2009CN101355010A Air-intake installation and reaction chamber
01/28/2009CN101355008A Method for forming film
01/28/2009CN101353813A Free-standing (Al, Ga, In)N and parting method for forming same
01/28/2009CN101353786A Foundation and manufacture method and chemical vapor deposition device having the foundation
01/28/2009CN101353785A Preparation of high-density carbon nano-tube array composite material
01/28/2009CN101353784A Method for coating target medicament particle with soft magnetic nanofilm
01/27/2009US7482286 Method for forming dielectric or metallic films
01/27/2009US7482284 Deposition methods for forming silicon oxide layers
01/27/2009US7482283 Thin film forming method and thin film forming device
01/27/2009US7482060 Silicon oxycarbide coatings having durable hydrophilic properties
01/27/2009US7482037 Methods for forming niobium and/or vanadium containing layers using atomic layer deposition
01/27/2009US7481904 Plasma device
01/27/2009US7481903 Processing device and method of maintaining the device, mechanism and method for assembling processing device parts, and lock mechanism and method for locking the lock mechanism
01/27/2009US7481902 Substrate processing apparatus and method, high speed rotary valve and cleaning method