Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
05/2009
05/27/2009EP2063458A2 Group III nitride semiconductor crystal growing method, group III nitride semiconductor crystal substrate fabrication method, and group III nitride semiconductor crystal substrate
05/27/2009EP2063457A2 Group III nitride semiconductor crystal growing method, group III nitride semiconductor crystal substrate fabrication method, and group III nitride semiconductor crystal substrate
05/27/2009EP2062996A2 Metalorganic chemical vapor deposition reactor
05/27/2009EP2062995A1 Amorphous Ge/Te deposition process
05/27/2009EP2061915A2 Apparatus and method of forming thin silicon nitride layers on surfaces of crystalline silicon solar wafers
05/27/2009EP2061578A1 Method of recycling hydrogen
05/27/2009EP2018642A4 Low temperature deposition of phase change memory materials
05/27/2009EP1902156B1 Method for treating plasma and/or covering plasma of workpieces under continuous atmospheric pressure
05/27/2009EP1635962B1 Cleaning a component of a process chamber
05/27/2009EP1535321A4 Low termperature deposition of silicon oxides and oxynitrides
05/27/2009CN101443898A High throughput deposition apparatus with magnetic support
05/27/2009CN101443487A Source container of a VPE reactor
05/27/2009CN101443478A Gas supply pipe for plasma treatment
05/27/2009CN101443477A Ti film forming method and storage medium
05/27/2009CN101443476A High crystalline quality synthetic diamond
05/27/2009CN101443475A Modular CVD reactor
05/27/2009CN101443474A Method and apparatus for improving uniformity of large-area substrates
05/27/2009CN101443338A Compound containing five (dimethyl amidocyanogen)disilane precursor and preparation method thereof
05/27/2009CN101442873A Equipment and method for processing plasma
05/27/2009CN101442003A Organosilane-containing material for insulation film, method for producing the same, and semiconductor device
05/27/2009CN101441983A Plasma confinement apparatus and semiconductor processing equipment applying the same
05/27/2009CN101440521A Semiconductor crystal growing method, semiconductor crystal substrate fabrication method, and semiconductor crystal substrate
05/27/2009CN101440520A Semiconductor crystal growing method, semiconductor crystal substrate fabrication method, and semiconductor crystal substrate
05/27/2009CN101440485A Film processing device
05/27/2009CN101440484A Induction coupling plasma processing apparatus and method
05/27/2009CN101440483A Charging room for chemical vapor deposition device
05/27/2009CN101440482A Film formation apparatus and method for using same
05/27/2009CN101440481A Method for preparing low-resistance silicon carbide on silicon oxide
05/27/2009CN101440480A Method for reducing silicon dioxide dielectric film deposition by HDP CVD process
05/27/2009CN101440479A Metalorganic chemical vapor deposition reactor
05/27/2009CN101440478A Preparation of a metal-containing film via ALD or CVD processes
05/27/2009CN101440477A Precursor compositions and methods
05/27/2009CN101440476A Mask assembly for thin film vapor deposition of flat panel display
05/27/2009CN100493267C Resistive heaters and uses thereof
05/27/2009CN100492592C GaN thin film upgrowth method based on Al3O2 substrate
05/27/2009CN100492591C Plasma processing device
05/27/2009CN100492587C Substrate processing apparatus and substrate processing method
05/27/2009CN100491588C Graphite washing unit
05/26/2009US7538046 Method of cleaning semiconductor device fabrication apparatus
05/26/2009US7538015 Method of manufacturing micro structure, and method of manufacturing mold material
05/26/2009US7538014 Method of producing crystalline semiconductor material and method of fabricating semiconductor device
05/26/2009US7538012 Fluorine-containing carbon film forming method
05/26/2009US7537846 Magnetic disk, method of manufacturing the magnetic disk and method of evaluating the magnetic disk
05/26/2009US7537804 Material formed over substrate with pulse sequence comprises first and second metals, and at least a portion of material is product from reaction of reactant with one or both of first and second metals; in particular, first and second metals can be aluminum and hafnium; forming dielectric hafnium oxide
05/26/2009US7537798 Deposition mask frame assembly, method of fabricating the same, and method of fabricating organic electroluminescent device using the deposition mask frame assembly
05/26/2009US7537673 Plasma processing apparatus
05/26/2009US7537672 Apparatus for plasma processing
05/26/2009US7537671 Self-calibrating optical emission spectroscopy for plasma monitoring
05/26/2009US7537662 Method and apparatus for depositing thin films on a surface
05/26/2009US7537628 Exhaust trap device
05/26/2009US7537425 Wafer processing apparatus having dust proof function
05/26/2009CA2483027C Method of making window unit
05/26/2009CA2452723C Photoactive coating, coated article, and method of making same
05/22/2009WO2009064345A2 A chemical mechanical planarization pad conditioner and methods of forming thereof
05/22/2009WO2009063755A1 Plasma processing apparatus and method for plasma processing semiconductor substrate
05/22/2009WO2009063631A1 Plasma treatment device
05/22/2009WO2009063629A1 Plasma processing apparatus
05/22/2009WO2009062877A2 Corrosion-resistant coating and method for producing same
05/22/2009WO2009042052A3 Process for forming thin film encapsulation layers
05/22/2009WO2009007524A3 Method for plasma-assisted vapour-phase chemical deposition of a carbon/metal film
05/22/2009WO2008117258A3 Method for low temperature thermal cleaning
05/22/2009WO2007109114A8 Self-supporting multilayer films having a diamond-like carbon layer
05/22/2009WO2007041454A3 Systems and methods for determination of endpoint of chamber cleaning processes
05/22/2009WO2007021692A3 Method and apparatus to control semiconductor film deposition characteristics
05/21/2009US20090130860 Method of manufacturing a semiconductor device and processing apparatus
05/21/2009US20090130859 Semiconductor Device Manufacturing Method and Substrate Processing Apparatus
05/21/2009US20090130858 Deposition system and method using a delivery head separated from a substrate by gas pressure
05/21/2009US20090130837 In situ deposition of a low k dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
05/21/2009US20090130794 Thermal evaporation apparatus, use and method of depositing a material
05/21/2009US20090130780 Semiconductor processing system and method of processing a semiconductor wafer
05/21/2009US20090130466 Deposition Of Metal Films On Diffusion Layers By Atomic Layer Deposition And Organometallic Precursor Complexes Therefor
05/21/2009US20090130414 Preparation of A Metal-containing Film Via ALD or CVD Processes
05/21/2009US20090130337 Programmed high speed deposition of amorphous, nanocrystalline, microcrystalline, or polycrystalline materials having low intrinsic defect density
05/21/2009US20090130326 Film forming material and method of film forming
05/21/2009US20090128019 Diffusion barrier coatings having graded compositions and devices incorporating the same
05/21/2009US20090127760 Holding device for holding workpieces and vacuum deposition apparatus using same
05/21/2009US20090127673 Method for producing semi-conducting devices and devices obtained with this method
05/21/2009US20090127672 Susceptor for epitaxial layer forming apparatus, epitaxial layer forming apparatus, epitaxial wafer, and method of manufacturing epitaxial wafer
05/21/2009US20090127669 Method for forming interlayer dielectric film, interlayer dielectric film, semiconductor device and semiconductor manufacturing apparatus
05/21/2009US20090127664 Group iii nitride semiconductor crystal growing method, group iii nitride semiconductor crystal substrate fabrication method, and group iii nitride semiconductor crystal substrate
05/21/2009US20090127663 Group iii nitride semiconductor crystal growing method, group iii nitride semiconductor crystal substrate fabrication method, and group iii nitride semiconductor crystal substrate
05/21/2009US20090127136 Electrode
05/21/2009US20090126634 Plasma processing apparatus
05/21/2009US20090126633 Electrode/probe assemblies and plasma processing chambers incorporating the same
05/21/2009US20090126632 Quick-change precursor manifold for large-area CVD and PECVD
05/21/2009US20090126631 Chemical vapor deposition reactor having multiple inlets
05/21/2009US20090126629 Film-forming system and film-forming method
05/20/2009EP2061090A1 Film forming condition setting method, photoelectric converter, and manufacturing method, manufacturing apparatus and inspection method for the same
05/20/2009EP2060663A1 Oxygen-doped N-type gallium nitride single crystal substrate
05/20/2009EP2060577A1 Copper precursors for thin film deposition
05/20/2009EP2060576A1 Deposition of Metal Films on Diffusion Layers by Atomic Layer Deposition and Organometallic Precursor Complexes Therefor
05/20/2009EP2060347A1 Inserts for parting or grooving and method of making
05/20/2009EP2059627A1 Method of forming a zinc oxide coated article
05/20/2009EP2059626A2 Solid precursor-based delivery of fluid utilizing controlled solids morphology
05/20/2009EP2059488A1 Method of making a low-resistivity, doped zinc oxide coated glass article and the coated glass article made thereby
05/20/2009EP2059328A1 Method of pumping gas
05/20/2009EP1695038A4 Controlling the flow of vapors sublimated from solids
05/20/2009EP1523585B1 Loading and unloading device for a coating unit
05/20/2009EP1366207B1 Plating method of metal film on the surface of polymer
05/20/2009EP1230416B1 A method for the manufacturing of a matrix