Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
01/2010
01/26/2010US7652288 Epitaxial and polycrystalline growth of Si1-X-YGEXCY and Si1-YCY alloy layers on Si by UHV-CVD
01/26/2010US7652227 Heating and cooling plate for a vacuum chamber
01/26/2010US7652179 Gas for plasma reaction, process for producing the same, and use thereof
01/26/2010US7651960 Chemical vapor deposition method preventing particles forming in chamber
01/26/2010US7651956 Process for fabricating films of uniform properties on semiconductor devices
01/26/2010US7651953 Method to form ultra high quality silicon-containing compound layers
01/26/2010US7651775 Plastic optical components, optical unit using the same and method of forming inorganic moisture-proof coating on plastic optical components
01/26/2010US7651734 Forming two micromechanical devices on common substrate; overcoating by vapor deposition; separation
01/26/2010US7651733 Forming film on a surface of a tabular substrate such as a semiconductor wafer with a high uniformity, by a plurality of source gases including an organic-metal including gas
01/26/2010US7651732 Magnesium-titanium solid solution alloys
01/26/2010US7651731 Use of niobium, niobium oxides, niobium alloys and associations thereof with other metals, alloys or oxides as an anticorrosive coating applied by a thermal spraying technique over carbon steel surfaces and other metallic materials of current use in industrial centers
01/26/2010US7651730 Method and apparatus for forming silicon oxide film
01/26/2010US7651729 Fabricating hafnium silicate layer on semiconductor substrate while also precisely controlling thicknesses of the thin films and also controlling the composition ratios of hafnium and silicon in the resultant hafnium silicate layer
01/26/2010US7651725 Low dielectric constant film produced from silicon compounds comprising silicon-carbon bond
01/26/2010US7651722 Shortening a cycle time of forming an organic layer of the display and suppressing wasteful consumption of organic materials used for forming the layer.
01/26/2010US7651587 Two-piece dome with separate RF coils for inductively coupled plasma reactors
01/26/2010US7651586 Particle removal apparatus and method and plasma processing apparatus
01/26/2010US7651585 Apparatus for the removal of an edge polymer from a substrate and methods therefor
01/26/2010US7651584 Processing apparatus
01/26/2010US7651583 Processing system and method for treating a substrate
01/26/2010US7651571 Susceptor
01/26/2010US7651570 Solid precursor vaporization system for use in chemical vapor deposition
01/26/2010US7651569 Pedestal for furnace
01/26/2010US7651568 Plasma enhanced atomic layer deposition system
01/26/2010US7650853 Device for applying electromagnetic microwave radiation in a plasma cavity
01/26/2010US7650684 Method for fabricating a magnetic head including a read sensor
01/26/2010CA2455255C Method for processing and producing a surface having a degree of luster
01/25/2010CA2673705A1 Interface-infused nanotube interconnect
01/21/2010WO2010009048A2 Tube diffuser for load lock chamber
01/21/2010WO2010008957A2 Bead pack brazing with energetics
01/21/2010WO2010008477A2 Chuck and bridge connection points for tube filaments in a chemical vapor deposition reactor
01/21/2010WO2010008021A1 Plasma treatment method and plasma treatment device
01/21/2010WO2010007981A1 Film-forming apparatus and powder evaporation apparatus
01/21/2010WO2010007356A2 Gas delivery device
01/21/2010WO2010007134A1 Process and installation for despositing films simultaneously onto both sides of a substrate.
01/21/2010WO2010007133A1 Process and installation for depositing films onto a substrate
01/21/2010WO2010006951A1 Process for the internal coating of hollow bodies using a plasma beam at atmospheric pressure
01/21/2010WO2010006902A1 Coating process using a plasma beam, wherein the layer contains nanozeolites loaded with dye
01/21/2010WO2009126952A3 Large scale nanoelement assembly method for making nanoscale circuit interconnects and diodes
01/21/2010US20100015799 Semiconductor device manufacturing method, semiconductor device manufacturing apparatus, computer program and storage medium
01/21/2010US20100015786 Vapor growth apparatus, vapor growth method, and method for manufacturing semiconductor device
01/21/2010US20100015731 Method of low-k dielectric film repair
01/21/2010US20100015473 Multi-layer coating
01/21/2010US20100015438 High colour diamond layer
01/21/2010US20100015428 Method of fabricating a thermostructural composite material part, and a part obtained thereby
01/21/2010US20100015402 Method for depositing a layer on a semiconductor wafer by means of cvd and chamber for carrying out the method
01/21/2010US20100015361 Vapor deposition source, a vapor deposition apparatus and a method for forming an organic thin film
01/21/2010US20100015359 Film deposition apparatus and method
01/21/2010US20100015358 Apparatus and method for surface finishing of metals and metalloids, metal oxides and metalloid oxides, and metal nitrides and metalloid nitrides
01/21/2010US20100015357 Capacitively coupled plasma etch chamber with multiple rf feeds
01/21/2010US20100015356 In-line film forming apparatus and manufacturing method of magnetic recording medium
01/21/2010US20100015335 Method for forming srtio3 film and storage medium
01/21/2010US20100015334 Film forming method and apparatus, and storage medium
01/21/2010US20100015324 Vapor deposition source, vapor deposition apparatus, and film-forming method
01/21/2010US20100015322 Method And Apparatus For Coating A Film On A Substrate
01/21/2010US20100014208 Substrate holder
01/21/2010US20100013385 Display device, apparatus for producing display device, and method for producing display device
01/21/2010US20100013052 Dual chamber system providing simultaneous etch and deposition on opposing substrate sides for growing low defect density epitaxial layers
01/21/2010US20100012576 Nanoporous carbonaceous membranes and related methods
01/21/2010US20100012483 drills; wear resistance; delays disintegration and diffusion of chromium nitrogen portion in aluminum chromiun nitrogen coating at high temperature; system comprises six cathodic arc sources, two TiSi targets associated with two of cathodic arc sources, four AlCrX targets associated with four arc sources
01/21/2010US20100012390 Method and apparatus for selectively leaching portions of PDC cutters already mounted in drill bits
01/21/2010US20100012275 Plasma processing apparatus
01/21/2010US20100012153 Method of cleaning film forming apparatus and film forming apparatus
01/21/2010US20100012037 Substrate transfer apparatus
01/21/2010US20100012036 Isolation for multi-single-wafer processing apparatus
01/21/2010US20100012034 Process And Apparatus For Depositing Semiconductor Layers Using Two Process Gases, One Of Which is Preconditioned
01/21/2010US20100012033 Sheet Plasma Film Forming Apparatus
01/21/2010US20100012032 Apparatus for high-rate chemical vapor deposition
01/21/2010US20100012030 Process for Deposition of Semiconductor Films
01/21/2010US20100012027 Device for injecting liquid precursors into a chamber in pulsed mode with measurement and control of the flowrate
01/21/2010US20100012026 Evaporation supply apparatus for raw material and automatic pressure regulating device used therewith
01/21/2010US20100011785 Tube diffuser for load lock chamber
01/21/2010DE19734736B4 Behälter aus pyrolytischem Bornitrid Pyrolytic boron nitride container
01/21/2010DE102009033265A1 Abdeckung für eine Rolle Cover for a role
01/21/2010DE102009027476A1 Innenkammerelement-Temperatursteuerverfahren, kammerinternes Element, Substratanbringtisch und Plasmabearbeitungsvorrichtungsvorrichtung, die selbigen enthält Inner chamber element temperature control method, chamber internal element Substratanbringtisch and plasma processing apparatus apparatus including selfsame
01/21/2010DE102009000544A1 Metallische bipolare Platte für eine Brennstoffzelle und Verfahren zum Bilden der Oberflächenschicht derselben Metallic bipolar plate for a fuel cell and method of forming the surface layer thereof
01/21/2010DE102008047736B3 Biegeunempfindliche optische Faser, Quarzglasrohr als Halbzeug für seine Herstellung sowie Verfahren zur Herstellung der Faser Bend-insensitive optical fiber, quartz glass tube as semifinished product for its preparation as well as procedures for making the fiber
01/21/2010DE102008033939A1 Verfahren zur Beschichtung A method of coating
01/20/2010EP2145987A1 Fabrication method of a group III nitride crystal substance
01/20/2010EP2145979A1 Method and installation for depositing layers on both sides of a substrate simultaneously
01/20/2010EP2145978A1 Method and installation for depositing layers on a substrate
01/20/2010EP2145977A2 Method for depositing layers on a substrate
01/20/2010EP2145030A2 Method for low temperature thermal cleaning
01/20/2010EP2144744A1 Edge healing and field repair of plasma coating
01/20/2010EP1947081B1 Titanium complexes, process for production thereof, titanium -containing thin films, and method for formation thereof
01/20/2010EP1274877B1 A method and a device for determining the end point of a cleaning operation of a cvd apparatus
01/20/2010CN201386135Y Full-automatic large flat PECVD silicon nitride membrane preparation system
01/20/2010CN101631894A Technique for atomic layer deposition
01/20/2010CN101629283A Roll-to-roll plasma device for enhancing chemical vapor deposition
01/20/2010CN101629282A Conversion device of silicon wafer carrier for PECVD
01/20/2010CN101629281A Metallorganics chemical gas phase deposition liquid inlet device
01/20/2010CN100583397C Doping method for III-v aluminum contained compound composed by direct or indirect band-gap
01/20/2010CN100582301C Catalyst enhanced chemical vapor deposition apparatus and deposition method using the same
01/20/2010CN100582300C Chemical vapor deposition apparatus for flat display
01/20/2010CN100582299C Method and processing system for controlling a chamber cleaning process
01/20/2010CN100582298C Process and apparatus for depositing semiconductor layers using two process gases, one of which is preconditioned
01/20/2010CN100582297C Thin film-forming material and method for producing thin film
01/20/2010CN100582296C Forming high-K dielectric layers on smooth substrates
01/20/2010CN100582295C Vacuum deposition apparatus and method of producing vapor-deposited film
01/20/2010CN100582294C Deposition system and method for measuring deposition thickness in the deposition system