Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
04/2010
04/01/2010US20100081288 Substrate processing apparatus and semiconductor device producing method
04/01/2010US20100081284 Methods and apparatus for improving flow uniformity in a process chamber
04/01/2010US20100080994 Methods for producing carbon nanostructures
04/01/2010US20100080958 Metal coating
04/01/2010US20100080934 depositing a first layer, then second layer, the layers contacting each other and having respective compositions effective to undergo an intermetallic reaction when activated, and introducing hydrogen into at least one of the layers by plasma hydrogenation; titanium, zirconium, zinc, boron, carbon layers
04/01/2010US20100080933 Multi-electrode pecvd source
04/01/2010US20100080929 System and method for applying a conformal barrier coating
04/01/2010US20100080905 Solute stabilization of sheets formed from a melt
04/01/2010US20100080904 Substrate processing chamber with off-center gas delivery funnel
04/01/2010US20100080902 Method and apparatus for low cost production of polysilicon using siemen's reactors
04/01/2010US20100080901 Evaporator for organic materials
04/01/2010US20100079866 Substrate comprising unmatched refractive index primer at optically significant thickness
04/01/2010US20100079555 Lead-containing perovskite-type oxide film and method of producing the same, piezoelectric device using a lead-containing perovskite-type oxide film, as well as liquid ejecting apparatus using a piezoelectric device
04/01/2010US20100079060 System and method for applying a conformal barrir coating with pretreating
04/01/2010US20100078746 Semiconductor device and method of manufacturing the same
04/01/2010US20100078601 Preparation of Lanthanide-Containing Precursors and Deposition of Lanthanide-Containing Films
04/01/2010US20100078308 Process for depositing a coating on a blisk
04/01/2010US20100078045 Semiconductor manufacturing apparatus and method for cleaning same
04/01/2010DE112008000279T5 Verfahren zur Herstellung von Gruppe III-V-Verbindungshalbleitern A process for the production of group III-V compound semiconductors
04/01/2010DE102008042450A1 Verfahren zum Strukturieren von Siliziumcarbid mittels fluorhaltiger Verbindungen Method for structuring of silicon carbide using fluorine-containing compounds
03/2010
03/31/2010EP2168763A1 Resin substrate
03/31/2010EP2168138A2 Magnetron co-sputtering device
03/31/2010EP2167703A2 Reactive flow deposition and synthesis of inorganic foils
03/31/2010EP2167702A1 Deposition process
03/31/2010EP2167701A1 Method for providing a crystalline germanium layer on a substrate
03/31/2010EP2167270A1 Gas distributor comprising a plurality of diffusion-welded panes and a method for the production of such a gas distributor
03/31/2010CN101689592A III nitride semiconductor light emitting element, method for manufacturing the iii nitride semiconductor light emitting element, and lamp
03/31/2010CN101689501A Lubricating oil composition for buffer
03/31/2010CN101689500A Film forming apparatus and film forming method
03/31/2010CN101689499A Vaporizer and film forming apparatus
03/31/2010CN101689490A Filming method, and treating system
03/31/2010CN101688311A Coated cutting tool, cutting member or wear part
03/31/2010CN101688307A Device for coating substrates disposed on a susceptor
03/31/2010CN101688306A Apparatus and method for depositing multiple coating materials in a common plasma coating zone
03/31/2010CN101688305A Deposition process
03/31/2010CN101688304A Method for controlling process gas concentration
03/31/2010CN101688303A Vacuum processing system
03/31/2010CN101688302A Deposition apparatus
03/31/2010CN101688301A Plasma-enhanced substrate processing method and apparatus
03/31/2010CN101688300A Method in depositing metal oxide materials
03/31/2010CN101688299A AI-Ti-Ru-N-C hard material coating
03/31/2010CN101688298A Method and device for preparing a multilayered coating on a substrate
03/31/2010CN101688297A An apparatus for depositing a uniform silicon film and methods for manufacturing the same
03/31/2010CN101688296A Vacuum processing system and substrate transfer method
03/31/2010CN101687389A Resin substrate
03/31/2010CN101685791A Substrate supporting device and method for discharging static electricity by using same
03/31/2010CN101684550A Vapor deposition systems and methods
03/31/2010CN101684549A Method for manufacturing nitride semiconductor device
03/31/2010CN101684548A Method for preparing amorphous silicon nano wire and application thereof in cathode of lithium battery
03/31/2010CN101684547A Method for forming copper film
03/30/2010US7687117 generally applicable to rectangular (or square) large area plasma processing equipment, which is used in but not limited to LCD, Plasma Display and Solar Cell production) or any other reactor using electromagnetic waves (RF, VHF) for processing
03/30/2010US7687114 coating fiber with barrier-forming material that creates diffusion barrier with metal; coating barrier-forming material with first compound that is wettable by metal; coating first compound with second compound that is wettable by metal, and coating second compound with metal through liquid metal bath
03/30/2010US7687110 Method of in-line purification of CVD reactive precursor materials
03/30/2010US7687109 Apparatus and method for making carbon nanotube array
03/30/2010US7687108 depositing sacrificial layer on substrate, depositing and annealing stressed metal or alloy material film in which deposition parameters of stressed metal or alloy material film are controlled to induce stress or produce stress gradient in stressed metal or alloy, removing sacrificial layer
03/30/2010US7687099 Spray coating
03/30/2010US7686971 Plasma processing apparatus and method
03/30/2010US7686926 A tantalum nitride/Ta barrier is first sputter deposited with high target power and wafer bias, argon etching is performed with even higher wafer bias. a flash step is applied with reduced target power and wafer bias; different magnetic field distributions
03/30/2010US7686917 Plasma processing system and apparatus and a sample processing method
03/30/2010US7686889 Susceptor for semiconductor manufacturing apparatus
03/30/2010US7686881 TiCl4 is vaporised at temperatures of less than 200 degree C., formed vapours are transferred to a mixing chamber by means of a carrier gas of defined moisture content, separately from this, hydrogen, primary air and steam are added to the mixing chamber, combustion in the chamber sealed from air
03/30/2010US7686879 styrene-acrylate copolymer or silicone resin as binder, sulfur or nitrogen doped titanium dioxide pigment as photocatalytic active agent adapted to absorb light at one or more absorption wavelengths; for thermal insulation composite systems; coating walls; algae and fungus growth resistance
03/30/2010US7685965 Apparatus for shielding process chamber port
03/30/2010US7685674 Exhaust gas treatment
03/30/2010CA2441490C Method for vapor phase aluminiding of a gas turbine blade partially masked with a masking enclosure
03/30/2010CA2386078C Uniform gas distribution in large area plasma source
03/25/2010WO2010034004A1 Systems, apparatus and methods for coating the interior of a container using a photolysis and/or thermal chemical vapor deposition process
03/25/2010WO2010033304A2 Solar cells fabricated by using cvd epitaxial si films on metallurgical-grade si wafers
03/25/2010WO2010032913A1 Method for depositing amorphous silicon thin film by chemical vapor deposition
03/25/2010WO2010032745A1 Temperature adjustment mechanism, and plasma treatment apparatus
03/25/2010WO2010032708A1 Method for reducing temperature of substrate placing table, computer-readable storage medium, and substrate processing system
03/25/2010WO2010032679A1 Material used for forming nickel-containing film and method for manufacturing the nickel-containing film
03/25/2010WO2010032673A1 Nickel-containing film‑formation material, and nickel-containing film‑fabrication method
03/25/2010WO2010032530A1 Thin film structural body and method for manufacturing the same
03/25/2010WO2010032386A1 Semiconductor device
03/25/2010WO2010031461A1 Plastic product having good barrier action after sterilization treatment
03/25/2010WO2010002572A3 Layered coating and method for forming the same
03/25/2010WO2009151492A3 Metal and electronic device coating process for marine use and other environments
03/25/2010US20100075508 Method of fabricating a semiconductor device
03/25/2010US20100075489 Method for producing semiconductor device and semiconductor producing apparatus
03/25/2010US20100075488 Cvd reactor with multiple processing levels and dual-axis motorized lift mechanism
03/25/2010US20100075191 Textured solid oxide fuel cell having reduced polarization losses
03/25/2010US20100075177 Tnalspreparation method of zinc-tin composite transparent conductive oxide films by using electron cyclotron resonance plasma chemical vapor deposition
03/25/2010US20100075150 Method of forming a gas barrier layer, a gas barrier layer formed by the method, and a gas barrier film
03/25/2010US20100075077 Container having improved ease of discharge product residue, and method for the production thereof
03/25/2010US20100075067 Preparation of Metal Oxide Thin Film Via Cyclic CVD or ALD
03/25/2010US20100075066 Plasma film forming apparatus and plasma film forming method
03/25/2010US20100075065 Film deposition of amorphous films by electron cyclotron resonance
03/25/2010US20100075037 Deposition Systems, ALD Systems, CVD Systems, Deposition Methods, ALD Methods and CVD Methods
03/25/2010US20100075036 Deposition apparatus and method for manufacturing film by using deposition apparatus
03/25/2010US20100075035 Film formation method and film formation apparatus
03/25/2010US20100075034 Controlled deposition of silicon-containing coatings adhered by an oxide layer
03/25/2010US20100075033 Localized Linear Microwave Source Array Pumping to Control Localized Partial Pressure in Flat and 3 Dimensional PECVD Coatings
03/25/2010US20100072057 Process for forming a ceramic oxide material with a pyrochlore structure having a high dielectric constant and implementation of this process for applications in microelectronics
03/25/2010US20100071625 Shutter disk having a tuned coefficient of thermal expansion
03/25/2010US20100071624 Substrate support frame, and substrate processing apparatus including the same and method of loading and unloading substrate using the same
03/25/2010US20100071623 Evaporating apparatus
03/25/2010US20100071621 Device for forming a film by deposition from a plasma
03/25/2010US20100071548 Method of Treating Gas
03/25/2010DE102008037387A1 Verfahren sowie Vorrichtung zum Abscheiden lateral strukturierter Schichten mittels einer magnetisch auf einem Substrathalter gehaltenen Schattenmaske A method and apparatus for depositing laterally structured layers by means of a shadow mask magnetically held on a substrate holder