Patents
Sitemap › C23 - Coating metallic material; Coating material with metallic material; Chemical surface treatment; Diffusion treatment of metallic material; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general; Inhibiting corrosion of metallic material or incrustation in general › C23C - Coating metallic material; Coating material with metallic material; Surface treatment of metallic material by diffusion into the surface, by chemical conversion or substitution; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general › C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes
Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
03/2010
03/04/2010WO2010023846A1 Semiconductor substrate and method for manufacturing the same
03/04/2010WO2010023516A1 Uv absorption based monitor and control of chloride gas stream
03/04/2010WO2010023345A1 Sheet with platinum metallic bronze coating, method for obtaining same and applications thereof
03/04/2010WO2010023109A1 Coating chamber with a moveable shield
03/04/2010WO2010022530A1 Method for manufacturing transparent conductive oxide (tco) films; properties and applications of such films
03/04/2010WO2009148284A3 Gaseous self-assembled monolayer coating apparatus
03/04/2010WO2009130252A3 Electroconductive diamond-like layer, method for producing said layer and use of said layer
03/04/2010WO2009114061A3 Nano-particle loaded metal oxide matrix coatings deposited via combustion deposition
03/04/2010US20100055904 Method for reducing tungsten roughness and improving reflectivity
03/04/2010US20100055881 Heat treatment method for compound semiconductor and apparatus therefor
03/04/2010US20100055816 Light Emitting Device Manufacturing Apparatus and Method
03/04/2010US20100055620 Nanostructure fabrication
03/04/2010US20100055466 Oxhidation inhibition of carbon-carbon composites
03/04/2010US20100055442 METHOD OF PE-ALD OF SiNxCy AND INTEGRATION OF LINER MATERIALS ON POROUS LOW K SUBSTRATES
03/04/2010US20100055413 article, and a method for creating the article, with a chemically patterned surface
03/04/2010US20100055412 String With Refractory Metal Core For String Ribbon Crystal Growth
03/04/2010US20100055352 Method of fabrication of fibers, textiles and composite materials
03/04/2010US20100055351 Film deposition apparatus, film deposition method, computer readable storage medium for storing a program causing the apparatus to perform the method
03/04/2010US20100055349 Scanning Probe Assisted localized CNT growth
03/04/2010US20100055348 Deposition apparatus and deposition method
03/04/2010US20100055347 Activated gas injector, film deposition apparatus, and film deposition method
03/04/2010US20100055345 High density helicon plasma source for wide ribbon ion beam generation
03/04/2010US20100055342 Modulated ion-induced atomic layer deposition (mii-ald)
03/04/2010US20100055321 Precursors for atomic layer deposition
03/04/2010US20100055320 Film deposition apparatus, substrate processing apparatus, film deposition method and storage medium
03/04/2010US20100055319 Film deposition apparatus, substrate processor, film deposition method, and computer-readable storage medium
03/04/2010US20100055318 Wafer carrier with varying thermal resistance
03/04/2010US20100055317 Film deposition apparatus exposing substrate to plural gases in sequence
03/04/2010US20100055316 Film deposition apparatus, substrate processing apparatus, film deposition method, and storage medium
03/04/2010US20100055315 Film deposition apparatus, substrate process apparatus, film deposition method, and computer readable storage medium
03/04/2010US20100055314 Film deposition apparatus, film deposition method, and storage medium
03/04/2010US20100055313 Organoruthenium complex, and method for production of ruthenium thin film using the ruthenium complex
03/04/2010US20100055312 Film deposition apparatus, substrate processing apparatus, film deposition method, and computer-readable storage medium
03/04/2010US20100055311 Film Conveyor Apparatus and Roll-to-Roll Vacuum Deposition Method
03/04/2010US20100055310 Group v metal containing precursors and their use for metal containing film deposition
03/04/2010US20100055297 Film deposition apparatus, substrate processing apparatus, film deposition method, and computer-readable storage medium for film deposition method
03/04/2010US20100055022 Diamond identifier
03/04/2010US20100052040 Method for forming silicon nitride film, method for manufacturing nonvolatile semiconductor memory device, nonvolatile semiconductor memory device and plasma apparatus
03/04/2010US20100051863 Oxhidation inhibition of carbon-carbon composites
03/04/2010US20100051584 Plasma processing apparatus and plasma processing method
03/04/2010US20100050945 Substrate processing apparatus
03/04/2010US20100050944 Film deposition apparatus, substrate process apparatus, and turntable
03/04/2010US20100050943 Film deposition apparatus and substrate processing apparatus
03/04/2010US20100050942 Film deposition apparatus and substrate process apparatus
03/04/2010US20100050941 Roll-to-roll type thin film pattern forming apparatus
03/04/2010US20100050938 Plasma processing apparatus
03/04/2010DE20321795U1 Vorrichtung zum Reinigen wenigsten einer Prozesskammer zum Beschichten wenigstens eines Substrats Apparatus for cleaning least one process chamber for coating at least one substrate
03/04/2010DE10296978B4 Elektrodenteil für eine Plasmabehandlungsvorrichtung, Plasmabehandlungsvorrichtung und Plasmabehandlungsverfahren Electrode member for a plasma processing apparatus, plasma processing apparatus and plasma processing method
03/04/2010DE102008045381A1 Verschleiß- und korrosionshemmender Schichtverbund Wear and corrosion-inhibiting layer composite
03/04/2010DE102008044987A1 Verringerung von Partikeln in PECVD-Prozessen zum Abscheiden eines Materials mit kleinem Epsilon unter Anwendung eines plasmaunterstützten Schritts nach der Abscheidung Reduction of particles in PECVD processes for the deposition of a material with a small epsilon using a plasma-assisted deposition step, in accordance with the
03/03/2010EP2159832A1 Process for producing semiconductor device, insulating film for semiconductor device, and apparatus for producing the insulating film
03/03/2010EP2159304A1 Apparatus and method for atomic layer deposition
03/03/2010EP2159302A1 Coating chamber with a moveable shield
03/03/2010EP2158613A2 Protection layer for fabricating a solar cell
03/03/2010EP1540695B1 A method and apparatus for the compensation of edge ring wear in a plasma processing chamber
03/03/2010CN201416032Y Gas distribution box for evenly depositing silicon thin film
03/03/2010CN101663417A Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
03/03/2010CN101663416A a hydrogenated amorphous carbon coating
03/03/2010CN101660144A Plasma torch for chemical vapor deposition
03/03/2010CN101660143A Flat heater and plasma processing equipment
03/03/2010CN101660142A Film deposition apparatus and a film deposition method
03/03/2010CN101660141A Film deposition apparatus and substrate process apparatus
03/03/2010CN101660140A Film deposition apparatus, substrate processing apparatus, and film deposition method
03/03/2010CN101660139A Film deposition apparatus, substrate processing apparatus, and computer readable storage medium
03/03/2010CN101660138A Activated gas injector, film deposition apparatus, and film deposition method
03/03/2010CN101660137A Pyrolytic graphite composite coating and applications thereof
03/03/2010CN101660136A Container for packing solid high-purity metal organic compounds and application thereof
03/03/2010CN100593040C System and method for forming compound capable of promoting electric conduction, and storage location
03/02/2010US7670945 In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
03/02/2010US7670944 Conformal lining layers for damascene metallization
03/02/2010US7670758 providing an article that includes a layer comprising a plurality of rows of a metal where each adjacent row of metal is separated by a trench, rows of metal forming a grating, filling at least 80% of each trench with inorganic dielectric second material; for lenses, polarizers, optical filters
03/02/2010US7670689 physical vapor deposition; magnetron cathode sputtering
03/02/2010US7670688 Oxide coating comprising yttrium (preferably yttria or yttria aluminum garnet) disposed over a support; coating and support differ from one another in coefficient of thermal expansion by no more than 5 x 10-6/K
03/02/2010US7670647 Alkyl zinc compound chelated by at least one tridentate ligand such as dimethyl zinc diglyme, an oxygen-containing compound, and inert carrier gases; affordable films for optical thin film stack designs such as photovoltaic cells
03/02/2010US7670646 inner chamber has a smaller volume than the outer chamber, which leads to less time to fill and purge during cycle times for deposition of materials such as alumina; making integrated circuits
03/02/2010US7670645 vaporized metallic element or salt is carried by an inert carrier gas heated to the same temperature as the vaporizing temperature to a heated processing chamber; semiconductor processing with improved process control
03/02/2010US7670644 surface layer which contains tungsten carbide (W3C) of very small particle diameter as a main ingredient and has a uniform and small surface roughness can be selectively formed by restricting the conditions of chemical vapor deposition within a specified range
03/02/2010US7670638 Protection layer for fabricating a solar cell
03/02/2010US7670637 uniformly coating a solution using a nozzle having external and internal bodies, where a distance between the external body and the internal body is controlled; an inlet receiver port on the nozzle body, a discharge port below; a driving unit for moving the nozzle; photolithography
03/02/2010US7670469 Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals
03/02/2010US7670455 Magnetically enhanced, inductively coupled plasma source for a focused ion beam system
03/02/2010US7670454 Plasma processing apparatus
03/02/2010US7670453 Device for treating a container with microwave plasma
03/02/2010US7670437 Mask and substrate alignment for solder bump process
03/02/2010US7670436 Support ring assembly
03/02/2010US7670435 Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPE
03/02/2010US7670434 Vapor phase growth apparatus
03/02/2010US7670433 Vacuum deposition apparatus of the winding type
03/02/2010US7670432 Exhaust system for a vacuum processing system
03/02/2010US7670431 Carbon nanotube manufacturing apparatus and method, and gas decomposer for use in the manufacturing apparatus and method
02/2010
02/25/2010WO2010021547A1 Conveyor assembly and method for conveying a substrate carrier
02/25/2010WO2010020544A1 Improvement of electrical and optical properties of silicon solar cells
02/25/2010WO2010020446A1 Trap
02/25/2010WO2010020445A1 Trap
02/25/2010WO2010020195A1 Plasma processing apparatus, gas distribution device and gas delivery method
02/25/2010WO2010020065A1 Method for fabricating ingan-based multi-quantum well layers
02/25/2010WO2009129194A3 Large-area single- and few-layer graphene on arbitrary substrates
02/25/2010WO2009112730A3 Method for recycling silane (sih<sb>4</sb>)
02/25/2010US20100048032 Process gas delivery for semiconductor process chamber
02/25/2010US20100048029 Surface Preparation for Thin Film Growth by Enhanced Nucleation
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