Patents for C09G 1 - Polishing compositions (7,846)
10/2002
10/15/2002US6464741 CMP polishing slurry dewatering and reconstitution
10/15/2002US6464740 Abrasive bimodal metal oxides; dimensional stability; chemical mechanical polishing
10/10/2002WO2002065529A3 Chemical-mechanical planarization using ozone
10/10/2002US20020147258 Smoothness; antisoilants; aqueous solution for floors
10/10/2002US20020146907 Method and apparatuses for making and using bi-modal abrasive slurries for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies
10/10/2002US20020145127 Chemical mechanical polishing slurry useful for copper substrates
10/09/2002EP1246879A1 A ta barrier slurry containing an organic additive
10/09/2002EP1246856A1 Fluorochemical sulfonamide surfactants
10/08/2002US6462009 Hydrophobizing microemulsions which improve the protection, drying rate and shine of surfaces
10/08/2002US6461958 Polishing memory disk substrates with reclaim slurry
10/08/2002US6461230 Chemical-mechanical polishing method
10/08/2002US6461227 Method of polishing a memory or rigid disk with an ammonia-and/or halide-containing composition
10/03/2002WO2002076902A1 Composition for texturing process
10/03/2002WO2001004226A3 Cmp composition containing silane modified abrasive particles
10/03/2002US20020142600 Abrasive composition for the integrated circuits electronics industry
10/03/2002US20020139055 Polishing composition and polishing method employing it
10/02/2002CN1371867A Crytalline ceric oxide sol and making method thereof
10/01/2002US6458290 Isolation and/or removal of ionic contaminants from planarization fluid compositions using macrocyclic polyethers
10/01/2002US6458289 CMP slurry for polishing semiconductor wafers and related methods
10/01/2002US6458017 Planarizing method
10/01/2002US6458016 Polishing fluid, polishing method, semiconductor device and semiconductor device fabrication method
09/2002
09/26/2002US20020134027 Pyrogenic preparation of alkali-doped silica particles for chemical mechanical polishing of semiconductor
09/25/2002EP1243611A1 Composited particles and aqueous dispersions for chemical mechanical polishing
09/25/2002EP1242557A1 Method of polishing or planarizing a substrate
09/25/2002EP1242546A1 Film forming compositions containing octyl benzoate
09/25/2002EP1140426B1 Chilled temperature polishing method for soft acrylic articles
09/25/2002CN1371529A Polishing compound for chemimechanical polishing and polishing method
09/25/2002CN1371528A Polishing compound for chemimachanical polishing and method for polishing substrate
09/24/2002US6454957 Ruthenium and ruthenium dioxide removal method and material
09/24/2002US6454821 Polishing composition and method
09/24/2002US6454820 Comprising silica particles, water, and an iron and/or aluminum salt of a polyaminocarboxylic acid such as edta for improving surface smoothness of substrates such as magnetic disk substrates
09/24/2002US6454819 Polymer particles having a siloxane bond-coupling section and a metal compound section on said polymer particles; metalloxane bond-containing section, alumina, ceria, or zirconia particle; strength, heat resistance
09/19/2002WO2002072726A1 Cerium based abrasive material and abrasive material slurry, and method for producing cerium based abrasive material
09/19/2002WO2002061008A3 Alkali metal-containing polishing system and method
09/19/2002WO2002055259A3 Tantalum removal during chemical mechanical processing
09/19/2002US20020132563 Polishing of semiconductor substrates
09/19/2002US20020132560 Polishing method for selective chemical mechanical polishing of semiconductor substrates
09/19/2002US20020129560 Acidic polishing slurry for the chemical-mechanical polishing of SiO2 isolation layers
09/19/2002US20020129559 Ratio of volume-cumulative (95%) average particle size (d95) to volume-cumulative (50%) average particle size (d50) (d95/d50) of 1.2-3
09/18/2002CN1370209A Polishing system with stopping compound and method of its use
09/18/2002CN1370208A Chemical mechanical polishing systems and methods for their use
09/18/2002CN1370207A Polishing system and method of its use
09/18/2002CN1369534A Abrasive compsns. and abrasive process using such compsns.
09/18/2002CN1369530A Polishing compsns. and polishing method using same
09/17/2002US6451697 Method for abrasive-free metal CMP in passivation domain
09/17/2002US6451214 Etching, shaping, or patterning layers or films with ceric ammonium nitrate in fabrication of semiconductor systems
09/12/2002WO2002070618A2 Use of a silicone surfactant in polishing compositions
09/12/2002US20020128327 Polishing composition and magnetic recording disk substrate polished with the polishing composition
09/12/2002US20020127954 Process for the chemical-mechanical polishing of isolation layers produced using the STI technology, at elevated temperatures
09/12/2002US20020125461 Ammonium oxalate-containing polishing system and method
09/12/2002US20020125460 Compositions for chemical mechanical planarization of tungsten
09/12/2002US20020124475 CMP polishing slurry dewatering and reconstitution
09/12/2002US20020124474 Silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent
09/11/2002EP1238417A1 Semiconductor processing silica soot abrasive slurry method for integrated circuit microelectronics
09/11/2002CN1368998A Abrasive grain with improved projectability
09/11/2002CN1368524A Double-component paint composition and preparation method
09/10/2002US6447695 Aqueous dispersion composition for chemical mechanical polishing for use in manufacture of semiconductor devices
09/10/2002US6447694 Composition for chemical mechanical polishing
09/10/2002US6447693 Slurries of abrasive inorganic oxide particles and method for polishing copper containing surfaces
09/10/2002US6447563 Chemical mechanical polishing slurry system having an activator solution
09/10/2002US6447373 Chemical mechanical polishing slurries for metal
09/10/2002US6447371 Chemical mechanical polishing slurry useful for copper/tantalum substrates
09/06/2002WO2002068546A1 Coating composition
09/05/2002US20020123224 Chemical mechanical polishing slurry
09/05/2002US20020121156 Silicon-aluminum mixed oxide powder containing 0.1 to 99.9 wt. % Al2O3 and Si-O- Al-bonds; used for the chemical- mechanical polishing of semiconductor substrates.
09/05/2002DE10107772A1 Vehicle care emulsion allowing good drying and/or hot wax application in car washes contains a cationic surfactant, solvent, silicone wax, emulsifiers, oils and water
09/04/2002EP1235639A1 Compositions including ether-capped poly(oxyalkylated) alcohol wetting agents
09/04/2002EP0852615A4 Chemical mechanical polishing composition and process
09/04/2002CN1367809A CMP composition containing silane modified abrasive particles
09/03/2002US6444732 Mixture containing organometallic pigment and 1,4,2-oxathiazine compound
09/03/2002US6444139 Chemical mechanical polishing
09/03/2002US6444132 Free abrasive slurry compositions
09/03/2002US6443812 Chemical mechanical polishing (cmp) with pad made of such as polyvinylpyrrolidone having affinity for surface groups on a semiconductor wafer; nonscratching, smoothness, noncoating
09/03/2002US6443811 High concentration of quaternary amine or amine salt cationic surfactant and minimum amount of abrasive particles in neutral to alkaline ph solution; chemisorbs to surface protecting from scratches and contamination
08/2002
08/29/2002WO2002067309A1 Polishing compound and method for polishing substrate
08/29/2002WO2002044300A3 Cerium-based abrasive and production process thereof
08/28/2002EP1235261A1 Polishing compound for semiconductor containing peptide
08/28/2002EP1234801A2 Crystalline ceric oxide sol and process for producing the same
08/28/2002EP1234800A1 Aqueous dispersion, process for its production and use thereof
08/28/2002EP1234010A2 Use of cesium hydroxide in a dielectric cmp slurry
08/28/2002EP1234009A1 Composition and method for planarizing surfaces
08/28/2002CN1366548A Composition for use in polishing magnetic disk substrate and method for preparing same
08/27/2002US6440857 Planarizing a wafer surface of aluminum and a ti/tin barrier layer; undesired surface nonplanarity after the cmp process, such as metal dishing and corrosion of dielectric layers with complicated pattern geometry, can be avoided
08/27/2002US6440187 Preparation of a polishing composition comprising the alumina powder, water and a polishing accelerator.
08/27/2002US6440186 Polishing composition and polishing method employing it
08/27/2002US6439972 Polishing fluid, polishing method, semiconductor device and semiconductor device fabrication method
08/22/2002WO2002065529A2 Chemical-mechanical planarization using ozone
08/22/2002WO2002064717A1 Detergent composition with antifouling property for hard surface
08/21/2002CN1089354C Wax-free furniture polish with silicone component
08/20/2002US6436834 Abrasion accelerator enhances the removal rate of a dielectric layer by chelation in either an acidic or a basic medium; methyl glycinate, glycinamide, aminoguanidine, semicarbazide, guanidine, urea, formamidine, acetamidine, formamide,
08/20/2002US6436811 Method of forming a copper-containing metal interconnect using a chemical mechanical planarization (CMP) slurry
08/20/2002US6435947 CMP polishing pad including a solid catalyst
08/20/2002US6435944 Chemical mechanical polishing (cmp); peroxycarboxylic acid or urea peroxyacid which dissociates into oxidizer and complexing agent; abrasive slurry; minimizing overetching; prevents dishing
08/15/2002WO2002063669A2 Method and apparatus for two-step barrier layer polishing
08/15/2002WO2001041973A9 Chemical-mechanical polishing method
08/15/2002US20020111027 Polishing compositions for noble metals
08/15/2002US20020111026 Polishing uisng ozone and abrasives
08/15/2002US20020111024 Chemical mechanical polishing compositions
08/14/2002EP1230312A1 Polish composition and method of use
08/14/2002EP1090083B1 Chemical mechanical polishing slurry useful for copper/tantalum substrates
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