C09G 1 - Polishing compositions

Patents for C09G 1 - Polishing compositions (7,846)
01/2003
01/07/2003	US6503136 A substrate capable of absorbing and retaining a fluid therein, having two opposed surfaces wherein at least one surface is abrasive; and an aqueous cleaner and polish formulation absorbed in the substrate, said formulation
01/03/2003	WO2003000460A1 Method of making light transmitting optical fluoride crystals
01/02/2003	US20030003747 Slurry of ceric ammonium nitrate ((NH4)2Ce(NO3)6) providing improved polishing speed under low pressure in one step; deposited as a barrier film for a capacitor using barium strontium titanate as a dielectric layer; semiconductors
01/02/2003	US20030003713 Semiconductor device and method for manufacturing the same
01/02/2003	EP1268681A2 Method for repairing and lustering defects on hydrophilic coat surface
01/01/2003	CN1097848C Chemically mechanical grinding method for producing integrated circuit and its apparatus
12/2002
12/27/2002	WO2002102920A1 A silica and a silica-based slurry
12/27/2002	WO2002102910A1 A silica-based slurry
12/26/2002	US20020197935 Method of polishing a substrate
12/26/2002	US20020197855 Chemical mechanical polishing slurry and process for ruthenium films
12/26/2002	US20020195421 In preference to silicon nitride; includes abrasives and amino acids; semiconductors
12/26/2002	US20020194789 Polishing composition
12/25/2002	CN1387556A Use of CsOH in dielectric CMP slurry
12/19/2002	WO2002101121A1 High surface quality gan wafer and method of fabricating same
12/19/2002	WO2002100963A1 Use of a gettering agent in a chemical mechanical polishing and rinsing operation and apparatus therefor
12/19/2002	US20020193468 Use of substituted 1,4,2-oxathiazines and their mono- and di-oxides as additives; refers to paints on ship hulls that release biocides as they dissolve
12/19/2002	US20020193451 Water and a polymer with a functional group that can react with the metal of a polishing surface
12/19/2002	US20020192962 Method of chemical/mechanical polishing of the surface of semiconductor device
12/19/2002	US20020192942 Composition compatible with aluminum planarization and methods therefore
12/19/2002	US20020189169 Poly(meth)acrylic acid with average molecular weight of 20000-1500000, 1-15% of an oxidizer, 50-5000 ppm of a corrosion inhibitor, </=3% of a complexing agent, .1-5% of a surfactant; chemical mechanical polishing of a semiconductor
12/18/2002	CN1385482A Aqueous paint compositions and floor polishing compositions
12/18/2002	CN1096491C Muti-purpose antistatic conditioning agent for removing dirt, brightening, polishing and renewing and its preparing process
12/18/2002	CN1096490C Glazing agent and its preparing process
12/12/2002	US20020187642 Composition compatible with aluminum planarization and methods therefore
12/12/2002	US20020185628 Composition and method of formation and use therefor in chemical-mechanical polishing
12/12/2002	US20020185054 High surface quality gan wafer and method of fabricating same
12/11/2002	EP1263906A1 Polishing composition
12/11/2002	CN1384860A Ta barrier slurry containing organic additive
12/11/2002	CN1384857A Iwitterionic siloxane polymers and ionically cross-linked polymers formed therefrom
12/11/2002	CN1384170A Grinding fluid composition
12/11/2002	CN1384166A Polishing composition for polishing surface of memory, hard disk and magnetic head and its polihsing method
12/10/2002	US6492274 Slurries of abrasive inorganic oxide particles and method for adjusting the abrasiveness of the particles
12/10/2002	US6491843 Amino acid or carboxylic acid with halide functional group
12/10/2002	US6491837 Mixture of particles; nitric acid or aluminum-, nickel-, magnesium-, zinc-, or ammonium nitrate oxidizer; co-oxidizer; and water; nickel-plated hard disk drives
12/05/2002	WO2002096999A1 Cerium oxide slurry, and method of manufacturing substrate
12/05/2002	WO2002063669A3 Method and apparatus for two-step barrier layer polishing
12/05/2002	US20020183455 Applying an aqueous coating compositions containing an additional copolymer and a crosslinker agent, especially useful as floor polish; durability and ready removability of the final coating after curing
12/05/2002	US20020183223 Liquid cleanser
12/05/2002	US20020182982 Additives for pressure sensitive polishing compositions
12/05/2002	US20020182868 Reduction of surface roughness during chemical mechanical planarization (CMP)
12/03/2002	US6488767 High surface quality GaN wafer and method of fabricating same
12/03/2002	US6488730 Comprises deionized water, metallic oxide, and cyclic amines for the chemical mechanical polishing of thin films used in integrated circuit manufacturing
12/03/2002	US6488729 Polishing composition and method
11/2002
11/28/2002	WO2002094957A2 Chemical mechanical polishing compositions and methods relating thereto
11/28/2002	WO2002056351A3 Polishing of semiconductor substrates
11/28/2002	US20020177318 Inclusion of surfactants, such as cetyltrimethylammonium bromide in a slurry mixture can reduce pattern sensitive erosion of dielectric materials such as silicon oxide, and fluorinated oxides of silicon
11/28/2002	US20020177316 Slurry comprising a chelating organic acid buffer system, colloidal silica, and an oxidizer.
11/28/2002	US20020177314 Abrasive slurry comprising abrasive particles having a hardness comparable to the hardness of said surface, wherein said abrasive particles have a surface charge opposite to that of said surface.
11/21/2002	WO2002092660A2 Polymeric surfactants derived from cyclic monomers having pendant fluorinated carbon groups
11/21/2002	WO2002092211A2 Bis (perfluoroalkanesulfonyl) imides and their salts as surfactants/additives for applications having extreme environments and methods therefor
11/21/2002	US20020173576 Floor finishes; gloss, protective coatings
11/21/2002	US20020173252 Chemical mechanical polishing
11/21/2002	US20020173243 Polishing composition having organic polymer particles
11/21/2002	US20020173241 Forming a passivating layer copper oxide for reducing the reaction of the copper metal with the polishing mixtures; reducing the problem of dishing of copper circuits of semiconductor devices
11/21/2002	US20020170237 Polishing slurry for the chemical-mechanical polishing of silica films
11/20/2002	EP1258037A1 Abrasives for chemical mechanical polishing
11/20/2002	EP1257386A1 Polishing pad with a transparent portion
11/14/2002	US20020168923 Chemical mechanical polishing slurry useful for copper substrates
11/13/2002	CN1379803A Improved CMP products
11/13/2002	CN1379074A Composition for grinding and manufacturing method of storage hard disk using said composition
11/12/2002	US6479387 Silicon nitride layer semiconductor surface is contacted with a surfactant chemical solution so that the nitride layer and micro-particles bare the same type of charge
11/12/2002	US6478837 Abrasive composition substrate for magnetic recording disks and process for producing substrates for magnetic recording disk
11/12/2002	US6478836 Cerium oxide slurry for polishing, process for preparing the slurry, and process for polishing with the slurry
11/12/2002	US6478835 Abrasive composition for polishing magnetic recording disk substrates
11/12/2002	US6478834 Slurry for chemical mechanical polishing
11/07/2002	US20020164876 Method for finishing polysilicon or amorphous substrate structures
11/06/2002	EP0985059B1 Composition and method for polishing a composite comprising titanium
11/05/2002	US6475407 Composition for polishing metal on semiconductor wafer and method of using same
10/2002
10/31/2002	WO2002070618A3 Use of a silicone surfactant in polishing compositions
10/31/2002	WO2002057382A3 A cmp polishing pad including a solid catalyst
10/31/2002	US20020160692 Method for planarizing organosilicate layers
10/31/2002	US20020160685 Glass powders, methods for producing glass powders and devices fabricated from same
10/31/2002	US20020160608 Copper-based metal polishing composition, method for manufacturing a semiconductor device, polishing composition, aluminum-based metal polishing composition, and tungsten-based metal polishing composition
10/30/2002	EP1253173A2 Aqueous coating composition and floor polishing composition
10/30/2002	EP1252651A2 Chemical-mechanical polishing method
10/30/2002	EP1252248A1 Polishing compositions for noble metals
10/30/2002	EP1252247A1 Polishing compositions for semiconductor substrates
10/30/2002	EP1252094A2 Stabilized silica and methods of making and using the same
10/30/2002	CN1377395A CMP products
10/29/2002	US6471930 Polishing compositions for fine polishing to very low tolerances, comprising metal compound particles of given average diameter and diameter distribution; making silica, and iron oxide particles via laser pyrolysis
10/29/2002	US6471884 Abrading with persulfate and/or peroxide oxidizing agents, an amino acid abrasive and water providing high removal rate while minimizing surface defects
10/29/2002	US6471735 Slurry of abrasive particles, suspension medium, peroxygen compound, etching agent and an alkyl ammonium hydroxide; increased silicon oxide to silicon nitride polish rate selectivity
10/24/2002	WO2002083804A1 Polishing composition having a surfactant
10/24/2002	WO2002068546B1 Coating composition
10/24/2002	US20020155975 Contaminated surface polishing -washing detergent composition
10/24/2002	US20020155650 Reducing defects by polishing with aqueous solvents
10/23/2002	EP1251163A1 Liquid cleanser
10/23/2002	EP1251156A1 Contaminated surface polishing-washing detergent composition
10/23/2002	EP1250390A1 Composition and method for planarizing surfaces
10/22/2002	US6468913 Ready-to-use stable chemical-mechanical polishing slurries
10/22/2002	US6468911 Method of chemical/mechanical polishing of the surface of semiconductor device
10/22/2002	US6468910 Slurry for chemical mechanical polishing silicon dioxide
10/22/2002	US6468909 Isolation and/or removal of ionic contaminants from planarization fluid compositions using macrocyclic polyethers and methods of using such compositions
10/22/2002	US6468137 Method for polishing a memory or rigid disk with an oxidized halide-containing polishing system
10/17/2002	WO2002081584A1 Polishing composition having organic polymer particles
10/17/2002	US20020151252 Polishing composition and polishing method employing it
10/17/2002	US20020148997 Slurry for CMP and CMP method
10/17/2002	US20020148169 Composition for metal CMP with low dishing and overpolish insensitivity
10/17/2002	DE10160174A1 Chemical/mechanical polishing slurry, used in producing shallow trench insulation in silicon wafer with oxide and nitride coatings, comprises abrasive particles in aqueous solution containing two different passivating agents
10/16/2002	CN1092698C Chemical-mechanical grinding composition for manufacturing semiconductor

1 ... 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 ... 79