Patents for C09G 1 - Polishing compositions (7,846)
06/2004
06/16/2004CN1153823C Composite for mechanochemical polishing polymer insulating material layer with low dielectric constant
06/15/2004US6750128 Methods of polishing, interconnect-fabrication, and producing semiconductor devices
06/15/2004US6749673 Biliquid foam furniture polish
06/10/2004WO2004048265A1 High-concentration silica slurry
06/10/2004US20040110887 .1-5 parts high molecular weight polyisobutene; polishes
06/10/2004US20040108302 Mixture of 5-aminotetrazole, oxidizer, abrasives, chelate compound and solvent
06/10/2004US20040107650 Composition and associated methods for chemical mechanical planarization having high selectivity for metal removal
06/09/2004EP1426425A1 Wax formulations and use thereof for polishing and preservation of surfaces
06/09/2004EP1425357A1 Polishing composition
06/09/2004CN1502667A Polishing solution composition
06/08/2004US6747065 Subjecting potassium silicate to an ion exchange to remove potassium and produce colloidal silica which is then subject to ultrafiltration to remove sodium,
06/08/2004US6746977 Polishing exterior surfaces; disposable products; non-woven, melt blown polypropylene
06/08/2004US6746314 Nitride CMP slurry having selectivity to nitride
06/03/2004WO2004013242A3 Polishing slurry system and metal poslishing and removal process
06/03/2004WO2003073481A3 Feedforward and feedback control of semiconductor fabrication process using secondary electron microscopy and a focused ion beam system
06/03/2004US20040106697 Stabilized, aqueous silicon dioxide dispersion
06/02/2004EP1424727A1 Polishing composition and rinse composition
06/02/2004EP0971993B1 Planarization composition for removing metal films
06/02/2004CN1501451A Method of fabricating semiconductor device
06/02/2004CN1500847A Chemical polishing agent for stainless steel products and technology thereof
06/02/2004CN1152416C Novel mechanical-chemical polishing method for semiconductor or insulation material layer
06/02/2004CN1152104C Abrasive composition for magnetic disk substrate and method for producing magnetic disk substrate
06/02/2004CN1152102C PH-buffered slurry and application for polishing thereof
06/01/2004US6743269 Granules based on pyrogenically produced aluminium oxide, process for the production thereof and use thereof
06/01/2004US6743268 Acidic slurry of an oxidizer, deionized water, a corrosion inhibitor and a surfactant
06/01/2004US6743267 Boron surface-modified colloids
05/2004
05/27/2004WO2004044079A1 Aerosol biliquid foam
05/27/2004WO2004044078A1 Wipes impregnated with biliquid foam treating liquids
05/27/2004WO2004044077A1 Biliquid foam furniture polish
05/27/2004WO2004044076A1 A slurry composition and a polishing method using the same
05/27/2004WO2004044075A2 Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents
05/27/2004WO2004043613A2 Dispenser assembly for a fragrance or personal care bottle and a method of assembling same____________________________________
05/27/2004US20040102142 Polishing composition
05/27/2004US20040099693 Dispenser assembly for a fragrance or personal care bottle and a method of assembling same
05/27/2004US20040098924 Contains hydroxyethyl cellulose, polyethylene oxide, ammonia, water, and silicon dioxide; for reducing haze level of surfaces of silicon wafers
05/26/2004EP1422277A1 High concentration silica slurry
05/26/2004EP1421610A1 Slurry composition for use in chemical mechanical polishing of metal wiring
05/26/2004CN1498933A Fluid for renewing and maintaining leather shoes
05/26/2004CN1498932A Waterless wax fluid for cleaning vehicle
05/26/2004CN1498931A Aqueous dispersion for chemical mechanical polishing and its use
05/26/2004CN1498906A Reaction product between copolymer aqueous emblsion and multivalent metallic compound and polishing compsn. contg. such reaction product
05/25/2004US6740591 Slurry and method for chemical mechanical polishing of copper
05/25/2004US6740590 Aqueous dispersion, aqueous dispersion for chemical mechanical polishing used for manufacture of semiconductor devices, method for manufacture of semiconductor devices, and method for formation of embedded writing
05/25/2004US6740589 Composition for polishing semiconductor wafer, semiconductor circuit wafer, and method for producing the same
05/21/2004WO2004042812A1 Polishing composition and rinsing composition
05/20/2004US20040097644 Free radical polymer having both neutralized carboxylic and sulfonic acid functionality; durability, adhesion; recoatable, alkali removable; low volatiles; shiny floors
05/20/2004US20040097172 Polishing compositions and use thereof
05/20/2004US20040097083 CMP process leaving no residual oxide layer or slurry particles
05/19/2004EP1102821A4 Composition and method for polishing in metal cmp
05/19/2004CN1497681A Grinding method of using slurry containing resin particle of organic membrane on semiconductor substrate
05/19/2004CN1497030A Polishing composition
05/19/2004CN1497029A Paste used for polishing copper base metal
05/19/2004CN1497010A Abrasive liquid composition
05/19/2004CN1150224C Contiuous bulk polymerization and esterification process and compositions including the polymeric product
05/18/2004US6736992 Chemical mechanical planarization of low dielectric constant materials
05/13/2004WO2004039905A1 Composition for polishing metal, polishing method for metal layer, and production method for wafer
05/13/2004US20040092417 Disposable products; hard surface cleaning compound; polishing furnisher; fabric impregnated with foam containing thickener; stability
05/13/2004US20040092106 Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents
05/13/2004US20040092103 Polishing fluid composition
05/13/2004US20040092102 Chemical mechanical polishing composition and method
05/13/2004US20040091427 Pressurized mixtures of propellant gasses and liquid surface or air treating materials are disclosed. The liquid materials are in the form of a dispersion which is a biliquid foam with a thickener, where the foam is structured as an oil-in-water
05/13/2004US20040089634 Compositions for oxide CMP
05/13/2004US20040089195 With a carbomer, colloidal polymer or gum thickener and containing a silicone oil or hydrocarbon oil, surfactant and water
05/12/2004CN1495244A Aqueous dispersion body for chemically mechanical polishing and semicoductor device production method
05/12/2004CN1149270C Oil for leather
05/11/2004US6733577 Oxides of aluminum, chromium and silicon, wax and mineral spirits
05/11/2004US6733553 Water, microparticles of a cerium oxide abrasive, and a chelating agent; forming a shallow trench isolation structure during planarization of a semiconductor
05/06/2004WO2004037943A1 Polishing slurry and polished substrate
05/06/2004WO2004037937A1 A corrosion retarding polishing slurry for the chemical mechanical polishing of copper surfaces
05/06/2004US20040084415 CMP process leaving no residual oxide layer or slurry particles
05/06/2004US20040084414 Polishing method and polishing composition used for polishing
05/06/2004US20040083656 Polishing composition
05/06/2004EP1416025A1 Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing
05/06/2004EP1414747A1 Granules based on pyrogenically produced aluminium oxide, their production process and use
05/06/2004DE10338088A1 Verfahren zur Herstellung eines Glassubstrats für einen Maskenrohling, Verfahren zur Herstellung eines Maskenrohlings, Verfahren zur Herstellung einer Transfermaske, Verfahren zur Herstllung eines Halbleiterbauelements, Glassubstrat für einen Maskenrohling, Maskenrohling und Transfermaske A process for producing a glass substrate for a mask blank, method of producing a mask blank, method of manufacturing a transfer mask, Herstllung method for a semiconductor device, glass substrate for a mask blank, the mask blank and transfer mask
05/05/2004CN1494740A SLurry and method for chemical mechanical polishing of copper
05/05/2004CN1494735A Chemical-mechanical planarization using ozone
05/04/2004US6730592 Methods for planarization of metal-containing surfaces using halogens and halide salts
05/04/2004US6730245 Slurry includes abrasive particles have a small particle size, narrow size distribution and a spherical morphology, and the particles are substantially unagglomerated, selected from silica, alumina, zirconia, ceria etc. and mixture
05/04/2004US6730147 Surface treating agent for ligneous floorings and process for manufacturing the same
04/2004
04/29/2004US20040082275 Continuous chemical mechanical polishing process for polishing multiple conductive and non-conductive layers on semiconductor wafers
04/29/2004US20040082274 Polishing slurry used for copper chemical mechanical polishing (CMP) process
04/29/2004US20040082180 Post-CMP treating liquid and method for manufacturing semiconductor device
04/29/2004US20040080256 Composite oxide; fine particle size; generating aerosols, heating to remove liquid, coating surfaces
04/29/2004DE10296958T5 Verfahren zur Herstellung von lichtdurchlässigen, optischen Fluorkristallen Process for the preparation of light-transmitting, optical fluorine crystals
04/28/2004EP1413650A1 Metal surface protection film forming agent and application thereof
04/28/2004EP1412462A1 Lanolin substitute, production method thereof and applications of same
04/28/2004EP1412443A1 Cerium oxide slurry and method of manufacturing a substrate
04/27/2004US6727309 Film-forming, emulsion-based polymer that reversible crosslinks and surfce treated particle dispersed; wear resistance, storage stability
04/27/2004US6726990 Silicon oxide particles
04/27/2004US6726534 Preequilibrium polishing method and system
04/22/2004WO2004033575A1 Floor finish composition
04/22/2004WO2004033574A1 Cmp method utilizing amphiphilic non-ionic surfactants
04/22/2004US20040077295 Process for reducing dishing and erosion during chemical mechanical planarization
04/22/2004US20040074518 Compositions are disclosed for chemical mechanical polishing (CMP) of semiconductor substrates, post-CMP storage of semiconductor substrates and post-CMP cleaning of semiconductor substrates. The methods and compositions feature
04/21/2004EP1411096A1 Composition for the temporary protection of smooth surfaces
04/21/2004CN1491265A Use of silicone surfactant in polishing compositions
04/21/2004CN1146623C Grinding composite and potching composite
04/20/2004US6723143 Reactive aqueous metal oxide sols as polishing slurries for low dielectric constant materials
04/15/2004WO2004031455A2 Method, composition and apparatus for tunable selectivity during chemical mechanical polishing of metallic structures
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