Patents for C09G 1 - Polishing compositions (7,846)
02/2005
02/03/2005US20050026437 Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same
02/03/2005US20050026205 Method of polishing metal and metal/dielectric structures
02/03/2005US20050022456 Polishing slurry and method for chemical-mechanical polishing of copper
02/03/2005US20050022309 fluorochemical compound; gloss imparting agent, and water; for treating natural or artificial leather.
02/02/2005CN1575325A Boron-containing polishing system and method
02/02/2005CN1574283A Method for forming buried wiring and semiconductor device
02/02/2005CN1574238A Slurry for CMP, polishing method and method of manufacturing semiconductor device
02/02/2005CN1574205A Chemical mechanical polishing method of organic film and method of manufacturing semiconductor device
02/02/2005CN1572858A Method for manufacturing substrate
02/02/2005CN1572424A Chemical mechanical polishing method for sti
02/02/2005CN1187427C Grinding fluid composition
02/02/2005CN1187426C Optical polishing formulation
02/01/2005US6849099 Colloidal silica, a periodic acid compound, ammonia, ammonium nitrate and water; pH is 1.8-4.0; reduces erosion when used in a final polishing step of manufacturing semiconductors
01/2005
01/27/2005WO2005007770A1 Abrasive particles for chemical mechanical polishing
01/27/2005WO2005007769A1 Method for setting firing temperature of cerium carbonate, method for producing cerium oxide abrasives and cerium oxide abrasives obtained by the method
01/27/2005WO2004055864A3 Composition and method for copper chemical mechanical planarization
01/27/2005US20050020192 Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates
01/27/2005US20050020187 Chemical mechanical polishing (CMP); for use on nickel/phosphorus alloys; contains abrasive particles, oxidant, oxidant modifier, and accelerants to sequester removed materials containing phosphonate and ammonium or amine groups
01/27/2005US20050020078 Method of planarizing a surface
01/27/2005US20050017367 Abrasive of precipitated silica, an oxidizer of ammonium persulfate, a corrosion inhibitor of barium and a buffer system; ph of 8-11.5
01/27/2005CA2532114A1 Abrasive particles for chemical mechanical polishing
01/26/2005EP1499693A2 Polishing composition and methods
01/26/2005CN1572017A Polishing compound, method for production thereof, and polishing method
01/20/2005WO2005005561A1 Cmp of noble metals
01/20/2005US20050014890 Composition for chemical-mechanical polishing and method of using same
01/19/2005CN1566243A Micro-mixed crystal anti-ozonant wax and its preparing process and application
01/19/2005CN1566220A Perlite tailing composition and its preparing process and application
01/18/2005US6844263 LSI device polishing composition and method for producing LSI device
01/13/2005WO2004053456A3 Method using multi-component colloidal abrasives for cmp processing of semiconductor and optical materials
01/13/2005US20050009714 Process and slurry for chemical mechanical polishing
01/13/2005US20050009322 Slurry for CMP, and method of manufacturing semiconductor device
01/13/2005US20050005525 Non-polymeric organic particles for chemical mechanical planarization
01/12/2005CN1564784A Aluminum oxide produced by flame hydrolysis and doped with divalent metal oxides and aqueous dispersions thereof
01/12/2005CN1563236A Brightening agent for vehicle without water washing, and preparation method
01/12/2005CN1184271C 抛光组合物 The polishing composition
01/11/2005US6840971 Chemical mechanical polishing systems and methods for their use
01/06/2005WO2005000984A1 Polishing composition and method for polishing substrate using the composition
01/06/2005US20050003746 Polishing composition
01/06/2005US20050003743 Fine abrasive grains for polishing; polymeric particles
01/06/2005US20050003666 CMP slurry and method of manufacturing semiconductor device
01/06/2005US20050003219 Protective coatings; gloss; antisoilants
01/06/2005US20050001199 Mixture containing ceria particles with bromoalcohol, polypotassium or ammonium acrylate, ammonium citrate or ammonium dodecylbenzenesulfonic acid; storage stability; neutral pH
01/05/2005EP1493789A1 Aqueous dispersion for chemical/mechanical polishing
01/05/2005CN1561376A Polishing composition
01/05/2005CN1560161A Aqueous base nano diamond polishing liquid and manufacture method thereof
01/04/2005US6838383 Copper polish slurry for reduced interlayer dielectric erosion and method of using same
01/04/2005US6838016 Abrasive comprising silicon dioxide, aluminum, cerium, zirconium, titanium oxides, polyalkyleneimine, quinaldic acid and derivatives, glycine, alanine, histidine and derivatives, benzotriazole, hydrogen peroxide; for semiconductors
12/2004
12/30/2004US20040266323 Method for manufacturing substrate
12/30/2004US20040266196 CMP of noble metals
12/30/2004US20040266188 Polishing method, metallization fabrication method, method for manufacturing semiconductor device and semiconductor device
12/30/2004US20040266183 Surfactant slurry additives to improve erosion, dishing, and defects during chemical mechanical polishing of copper damascene with low K dielectrics
12/30/2004US20040265615 Fineness particle sizes; spraying pyrolysis
12/30/2004US20040261323 Abrasive grains which are sufficiently small relative to the line width of wirings so as to make it possible to perform fine and delicate polishing
12/29/2004EP1491605A1 Cerium based abrasive material and method for preparation thereof
12/28/2004US6835120 Method and apparatus for mechanochemical polishing
12/23/2004WO2004112105A2 Multi-step chemical mechanical polishing of a gate area in a finfet
12/23/2004WO2004111157A1 Polishing fluid for metal and polishing method
12/23/2004WO2004111146A1 Polishing composition and method for polishing a conductive material
12/23/2004WO2004111145A1 Polishing composition and polishing method
12/23/2004WO2004090937A3 Copper cmp slurry composition
12/23/2004WO2004076574A3 Cmp composition comprising a sulfonic acid and a method for polishing noble metals
12/23/2004US20040259366 Method and composition for the chemical-vibrational-mechanical planarization of copper
12/23/2004US20040258608 Using water soluble dispersant having attraction to metal oxide nanocrystals; storable, nonsettling
12/23/2004DE19942962B4 Wachsmischung für wäßrige Anwendungen Wax composition for aqueous applications
12/22/2004EP1489650A1 Polishing composition and method for forming wiring structure
12/22/2004EP1487938A1 Slurry and method for chemical mechanical polishing of metal structures including refractory metal based barrier layers
12/22/2004EP1487931A1 Methanol-containing silica-based cmp compositions
12/22/2004CN1556840A Rare earth salt oxidizer based CMP method
12/16/2004WO2004094547A3 Coated metal oxide particles for cmp
12/16/2004US20040253822 Chemical mechanical polishing method of organic film and method of manufacturing semiconductor device
12/16/2004US20040253775 Multi-step chemical mechanical polishing of a gate area in a finfet
12/16/2004US20040250476 Colloidal silica, a periodic acid compound, ammonia, ammonium nitrate and water; pH is 1.8-4.0; reduces erosion when used in a final polishing step of manufacturing semiconductors
12/16/2004DE10323743A1 Freilegemasse, Freilegeverfahren und Freilegevorrichtung Uncovering compound, uncovering process and uncovering apparatus
12/15/2004EP1485440A1 Free radical-forming activator attached to solid and used to enhance cmp formulations
12/15/2004EP1485439A1 Improved chemical-mechanical polishing slurry for polishing of copper or silver films
12/15/2004EP1421610A4 Slurry composition for use in chemical mechanical polishing of metal wiring
12/15/2004CN1180043C 抛光组合物 The polishing composition
12/14/2004US6830823 Gold powders, methods for producing powders and devices fabricated from same
12/14/2004US6830609 Polishes and their use
12/14/2004US6830504 Barrier-slurry-free copper CMP process
12/09/2004WO2004107429A1 Abrasive and method of polishing
12/09/2004WO2004092298A3 Polishing compositions and method of use
12/09/2004WO2004043613A3 Dispenser assembly for a fragrance or personal care bottle and a method of assembling same____________________________________
12/09/2004US20040248418 Fabrication method of semiconductor integrated circuit device
12/09/2004US20040248415 Polishing method and polishing liquid
12/09/2004US20040248412 Method and composition for fine copper slurry for low dishing in ECMP
12/09/2004US20040248401 Method for forming buried wiring and semiconductor device
12/09/2004US20040247782 Palladium-containing particles, method and apparatus of manufacture, palladium-containing devices made therefrom
12/09/2004US20040244911 Sluury composition for use in chemical mechanical polishing of metal wiring
12/09/2004US20040244675 Non-magnetic particles having a plate shape and method for production thereof, abrasive material, polishing article and abrasive fluid comprising such particles
12/09/2004US20040244300 Metals such as copper, tantalum; high speed, efficiency; storage stability, nonprecipitating; mixture of anionic surfactant, abrasive, metal compound and water
12/09/2004DE10320854A1 Dispersion zum chemisch-mechanischen Polieren Dispersion for chemical mechanical polishing,
12/08/2004EP1483349A1 Anionic abrasive particles treated with positively-charged polyelectrolytes for cmp
12/07/2004US6827871 Ruthenium and ruthenium dioxide removal method and material
12/07/2004US6827752 Cerium oxide slurry, and method of manufacturing substrate
12/07/2004US6827639 Polishing particles and a polishing agent
12/02/2004WO2004104122A2 Polishing composition for magnetic disks comprising a surface cleaning agent and polishing method
12/02/2004WO2004103640A1 Exposing substance, exposing method, and exposing device
12/02/2004WO2004076575A3 Modular barrier removal polishing slurry
12/02/2004WO2004072199A3 Mixed-abrasive polishing composition and method for using the same
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