Patents for C09G 1 - Polishing compositions (7,846) |
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03/31/2005 | US20050070109 Novel slurry for chemical mechanical polishing of metals |
03/31/2005 | US20050069640 Small particle size, narrow size distribution and a spherical morphology; spray pyrolysis |
03/31/2005 | US20050066585 Comprises oxidizer (hydrogen peroxide), inhibitor of nonferrous metal, abrasive, complexing agent, imine derivatives (acetamidine hydrochloride), hydrazine derivatives (carbohydrazide), and water; for use with polyurethane polishing pads; for semiconductor substrates |
03/30/2005 | EP1518910A1 Polishing composition for semiconductor wafers |
03/30/2005 | EP1517972A1 Metal polish composition, polishing method using the composition and method for producing wafer using the polishing method |
03/30/2005 | EP1218465B1 Polishing system with stopping compound and method of its use |
03/29/2005 | US6872329 Chemical mechanical polishing composition and process |
03/29/2005 | US6872328 Method of polishing or planarizing a substrate |
03/24/2005 | WO2005026277A1 Chemical-mechanical polishing composition and method for using the same |
03/24/2005 | WO2005026051A1 Cerium salt, process for producing the same, cerium oxide, and cerium-based abrasive material |
03/24/2005 | US20050064798 Methods and compositions for chemical mechanical planarization of ruthenium |
03/24/2005 | US20050064796 Slurry for CMP, polishing method and method of manufacturing semiconductor device |
03/24/2005 | US20050062016 Metal CMP slurry compositions that favor mechanical removal of metal oxides with reduced susceptibility to micro-scratching |
03/24/2005 | US20050061107 Coated silver-containing particles, method and apparatus of manufacture, and silver-containing devices made therefrom |
03/23/2005 | EP1252094B1 Stabilized silica and methods of making and using the same |
03/23/2005 | CN1599951A Method for copper CMP using polymeric complexing agents |
03/23/2005 | CN1598062A Particle-free polishing fluid for nickel-based coating planarization |
03/23/2005 | CN1597821A Multifunction fouling removal brighting emulsion |
03/23/2005 | CN1194060C Preparation method of regenerative rare-earth polishing powder |
03/23/2005 | CN1194059C Acid aluminium shapes polishing agent containing hydrofluoric acid |
03/22/2005 | US6869336 Planarization composition causes the ruthenium to be removed from the work piece as a ruthenium oxide |
03/17/2005 | US20050059782 Continuous bulk polymerization and esterification process and compositions |
03/17/2005 | US20050059247 Method for manufacturing SiC substrate |
03/17/2005 | US20050056810 Polishing composition for semiconductor wafers |
03/17/2005 | US20050056368 Chemical-mechanical polishing composition and method for using the same |
03/16/2005 | EP1204712B1 Abrasive grain with improved projectability |
03/16/2005 | CN1596297A Cleaning agent and cleaning method for ridding titanium and titanium alloy building materials of discoloration |
03/16/2005 | CN1193408C Polishing compound for semiconductor containing peptide |
03/15/2005 | US6867140 Metal layer; mixture of liquid carrier, oxidizer and terminating compound |
03/15/2005 | US6867138 Method of chemical/mechanical polishing of the surface of semiconductor device |
03/15/2005 | US6866929 Glass powders, methods for producing glass powders and devices fabricated from same |
03/15/2005 | US6866793 High selectivity and high planarity dielectric polishing |
03/15/2005 | US6866792 Compositions for chemical mechanical planarization of copper |
03/10/2005 | WO2005022621A1 Polishing composition and polishing method using same |
03/10/2005 | US20050054273 Polishing kit for magnetic disk |
03/10/2005 | US20050054203 Polishing composition |
03/10/2005 | US20050050803 Polishing fluid and polishing method |
03/09/2005 | EP1512732A1 Polishing composition |
03/09/2005 | CN1590487A Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers |
03/08/2005 | US6864349 Aqueous suspensions containing polymerized fatty acid-based polyamides |
03/08/2005 | US6864177 Method for manufacturing metal line contact plug of semiconductor device |
03/08/2005 | US6863797 Electrolyte with good planarization capability, high removal rate and smooth surface finish for electrochemically controlled copper CMP |
03/08/2005 | US6863700 Cerium oxide abrasive and method of polishing substrates |
03/08/2005 | US6863592 Chemical/mechanical polishing slurry and chemical mechanical polishing method using the same |
03/03/2005 | WO2005019364A1 Periodic acid compositions for polishing ruthenium/high k substrates |
03/03/2005 | US20050049159 Combination cleaning and waxing composition and method |
03/03/2005 | US20050048877 Method of chemical mechanical polishing using abrasive particles of alkaline earth metal salts |
03/03/2005 | US20050048293 Negative static electrically charged coating method and composition for repelling dust from glass |
03/03/2005 | US20050045852 Particle-free polishing fluid for nickel-based coating planarization |
03/03/2005 | US20050044803 Composition and associated methods for chemical mechanical planarization having high selectivity for metal removal |
03/03/2005 | US20050044801 For enhanced wettability/dispersability/bonding; comprises metal oxide layer; chemical mechanical polishing (CMP) |
03/02/2005 | CN1589301A Furniture polish composition |
03/01/2005 | US6861353 Methods for planarization of metal-containing surfaces using halogens and halide salts |
03/01/2005 | US6861010 Copper-based metal polishing composition, method for manufacturing a semiconductor device, polishing composition, aluminum-based metal polishing composition, and tungsten-based metal polishing composition |
03/01/2005 | US6860913 Method for making abrasive compositions and products thereof |
02/24/2005 | WO2005017989A1 Abrasive compound for semiconductor planarization |
02/24/2005 | WO2005017250A1 A composition, wipe and method for cleaning, protecting and imparting gloss to a substrate |
02/24/2005 | WO2005016822A1 Silica and silica-based slurry |
02/24/2005 | WO2004112105A3 Multi-step chemical mechanical polishing of a gate area in a finfet |
02/24/2005 | WO2004104122A3 Polishing composition for magnetic disks comprising a surface cleaning agent and polishing method |
02/24/2005 | CA2533928A1 A composition, wipe and method for cleaning, protecting and imparting gloss to a substrate |
02/23/2005 | CN1583989A Leather cleaning cream |
02/23/2005 | CN1583925A Brightener automatic tableware cleaner |
02/23/2005 | CN1583924A Leather protecting agent |
02/22/2005 | US6858678 For preparing emulsions and dispersions utilizing the polymeric products which are used in overprint varnishes (OPVs), inks, coatings, surfactants, adhesives, paints, primers, and floor polishes |
02/22/2005 | US6858539 Post-CMP treating liquid and method for manufacturing semiconductor device |
02/22/2005 | US6858124 Electrochemical mechanical deposition comprising a perfluorinated sulfonic acid compounds solution, controlling the etching and dissolving copper from copper foil, electrodepositing copper on connector |
02/22/2005 | US6858071 Low viscosity; hard protective coatings; polyethylene from a single-site catalyst based on a tri-P or N heterocyclohexane complex of transition metal from groups 5 to 8; Cr complexes of 1,3,5-triazacyclohexane or 1,3,5-triphosphacyclohexane |
02/17/2005 | WO2005014753A1 Non-polymeric organic particles for chemical mechanical planarization |
02/17/2005 | WO2005014747A1 Polish compositions and their uses |
02/17/2005 | WO2005014746A1 Cmp slurry |
02/17/2005 | WO2004073922A3 Abrasives for copper cmp and methods for making |
02/17/2005 | US20050037936 Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents |
02/17/2005 | US20050037693 Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method |
02/16/2005 | CN1580173A Polishing composition for magnetic disk |
02/15/2005 | US6855607 Multi-step chemical mechanical polishing of a gate area in a FinFET |
02/15/2005 | US6855267 For horizontally planarizing various kinds of layers, such as oxide layers, nitride layers, metal layers during manufacturing of semiconductor devices |
02/15/2005 | US6855266 Liquid carrier, oxidizing agent, carboxylic acid that increases the polishing rate, a polyethylenimine, and a polishing pad and/or an abrasive. |
02/10/2005 | WO2005012451A2 Slurries and methods for chemical-mechanical planarization of copper |
02/10/2005 | US20050032948 Preparing a terpolymer of ethylene, polyethylene glycol methacrylate methyl ether and methacrylic acid; block copolymerization; used as floor polishes having gloss; shelf life |
02/10/2005 | US20050032463 Polishing composition for magnetic disk |
02/10/2005 | US20050031789 Comprises a corrosion inhibitor for limiting removal of an interconnect metal with an acidic pH; includes an organic-containing ammonium salt |
02/10/2005 | US20050029491 Aqueous solution mixture of oxidizer and abrasive; using polymaleic acid; acidity pH |
02/10/2005 | US20050028450 CMP slurry |
02/10/2005 | US20050028449 Polishing composition |
02/09/2005 | EP1505639A1 Polishing fluid and polishing method |
02/09/2005 | EP1505134A1 Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers |
02/09/2005 | EP1505133A1 Composition for polishing semiconductor layers |
02/09/2005 | EP1056816B1 Cerium oxide slurry for polishing, process for preparing the slurry, and process for polishing with the slurry |
02/09/2005 | CN1577769A Process for grinding metal layer |
02/09/2005 | CN1576347A Aqueous dispersion for chemical - mechanical grinding and chemical-mechanical grinding method thereof |
02/09/2005 | CN1576346A Polishing composition |
02/09/2005 | CN1576345A Aqueous dispersion for chemical/mechanical polishing |
02/09/2005 | CN1576339A 抛光组合物 The polishing composition |
02/08/2005 | US6852781 Fluorochemical sulfonamide surfactants |
02/08/2005 | US6852632 Method of polishing a multi-layer substrate |
02/08/2005 | US6852631 Copper polish slurry for reduced interlayer dielectric erosion and method of using same |
02/08/2005 | US6852009 Polishing formulation for polishing semiconductor wafer consists of a silicon dioxide, a base selected from inorganic salt of alkali metal, an ammonum salt, piperazine and ethylenediamine, at least one chelating agent free of EDTA |
02/03/2005 | WO2005010966A1 Method for polishing wafer |
02/03/2005 | US20050026444 Slurry and method for chemical-mechanical planarization of copper |