Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
10/2003
10/23/2003US20030199104 Material combinations for tunnel junction cap layer, tunnel junction hard mask and tunnel junction stack seed layer in MRAM processing
10/23/2003US20030198113 Memory storage device with heating element
10/23/2003US20030198096 Semiconductor memory device
10/23/2003US20030198093 Methods of fabricating an mram device using chemical mechanical polishing
10/23/2003US20030198081 Thin film magnetic memory device reducing a charging time of a data line in a data read operation
10/23/2003US20030197988 Magnetic sensing element
10/23/2003US20030197987 CPP magnetic sensing element
10/23/2003US20030197984 Magnetoresistive element and magnetic memory device
10/23/2003US20030197505 Magnetoresistance effect element and method for producing the same, and magnetoresistance effect type head, magnetic recording apparatus, and magnetoresistance effect memory element
10/23/2003US20030197503 Multilayer; substrate, detector, polymer interface and signal circuit; rotation
10/23/2003US20030197235 Conductive film layer for hall effect device
10/22/2003EP1354322A1 Non orthogonal mram device
10/22/2003CN1451181A Method and device for transferring spin-poarized charge carriers
10/22/2003CN1451164A Memory cell component and production method thereof
10/22/2003CN1451157A Integrated on-board device and method for the protection of magnetoresistive heads from electrostatic discharge
10/22/2003CN1450672A Method for reducing offset voltage of Hall device
10/22/2003CN1450671A Method for raising anti-elactrostatic break-down ability of Hall device
10/22/2003CN1450670A Process for preparing high-linearity gallium arsenide Hall device
10/21/2003US6636392 Thin-film magnetic head with magnetoresistive effect element
10/21/2003US6636391 Magnetoresistive sensor, magnetic head and magnetic disk apparatus
10/21/2003US6636389 GMR magnetic transducer with nano-oxide exchange coupled free layers
10/21/2003US6635947 Monolithically integrable inductor
10/21/2003US6635546 Method and manufacturing MRAM offset cells in a damascene structure
10/21/2003US6635499 MRAM sense layer isolation
10/21/2003US6635496 Plate-through hard mask for MRAM devices
10/21/2003US6635184 Method for pattern-etching alumina layers and products
10/16/2003WO2003085750A1 Magnetoresistance effect element and magnetic memory device
10/16/2003WO2003085674A2 Synthetic-ferrimagnet sense-layer for high density mram applications
10/16/2003WO2003085410A1 Method and arrangement for protecting a chip and checking its authenticity
10/16/2003WO2002095794A3 Semiconductor memory device and method for the production thereof
10/16/2003WO2002073226A3 Tunnel junction and charge perpendicular-to-plane magnetic recording sensors and method of manufacture
10/16/2003US20030194819 Semiconductor constructions and methods of forming semiconductor constructions
10/16/2003US20030193763 Magnetoresistive sensor including magnetic domain control layers having high electric resistivity, magnetic head and magnetic disk apparatus
10/16/2003US20030193760 Thin film head with transverse biasing layers
10/16/2003US20030193759 Magnetoresistance effect device
10/15/2003CN1448948A Magnetic storage device
10/15/2003CN1448947A Method of making magnetic memory device
10/15/2003CN1448945A Magnetoresistive element and magnetic memory thereof
10/15/2003CN1448944A Film magnetic storage device equipped with false elements for data reading reference
10/15/2003CN1448943A Magnetic storage device
10/15/2003CN1448917A Solid magnetic element and solid magnetic element array
10/15/2003CN1124594C Magnetoresistance effect device, magnetoresistance head method for producing magnetoresistance effect device
10/14/2003US6633498 Magnetoresistive random access memory with reduced switching field
10/14/2003US6633497 Resistive cross point array of short-tolerant memory cells
10/14/2003US6633464 Synthetic antiferromagnetic pinned layer with Fe/FeSi/Fe system
10/14/2003US6633463 Thin-film magnetic head, head suspension assembly, magnetic disk device and manufacturing method of them
10/14/2003US6633462 Magnetoresistive angle sensor having several sensing elements
10/14/2003US6632474 Robust hard bias/conductor lead structures for future GMR heads
10/14/2003US6631549 Method of making a seed layer for a nickel oxide pinning layer for increasing the magnetoresistance of a spin valve sensor
10/14/2003CA2095964C Hall-effect sensor
10/09/2003WO2003084065A1 Integrated circuit, integrated circuit device, method for structuring integrated circuit device, and method for manufacturing integrated circuit device
10/09/2003WO2003083910A1 Reduction of noise, and optimization of magnetic field sensitivity and electrical properties in magnetic tunnel junction devices
10/09/2003WO2003083873A1 Method for producing a reference layer and an mram memory cell provided with said type of reference layer
10/09/2003WO2003083838A1 Magnetoresistance sensor and method for producing the same
10/09/2003WO2003083499A2 Spin dependent tunneling devices having reduced topological coupling
10/09/2003US20030190460 Magnetic sensor having second antiferromagnetic layers and two types of electrode layers on free magnetic layer and manufacturing method thereof
10/09/2003US20030189853 Thin film magnetic memory device provided with a dummy cell for data read reference
10/09/2003US20030189842 Synthetic-ferrimagnet sense-layer for high density MRAM applications
10/09/2003US20030189797 Magnetic head and magnetic disk apparatus
10/09/2003US20030189234 Hall effect device
10/07/2003US6631057 Magnetic device with ferromagnetic layer contacting specified yttrium or rare earth element oxide antiferromagnetic layer
10/07/2003US6630248 Synthetic anti-parallel/parallel/pinned layer spin valve
10/02/2003WO2003081680A1 Tunneling magnetoresistance device, semiconductor junction device, magnetic memory, and semiconductor light-emitting device
10/02/2003WO2003081672A1 Magnetic memory device and manufacturing method thereof
10/02/2003US20030186552 Method for producing magnetic memory device
10/02/2003US20030186482 Integrated sensor packages and methods of making the same
10/02/2003US20030185065 Thin film magnetic memory device selecting access to a memory cell by a transistor of a small gate capacitance
10/02/2003US20030185050 Magnetoresistance element and magnetic memory
10/02/2003US20030185046 Magnetoresistive effect element and magnetic memory having the same
10/02/2003US20030185038 Diode for use in MRAM devices and method of manufacture
10/02/2003US20030184925 Magnetic sensing element comprising antiferromagnetic layer laminated on free magnetic layer
10/02/2003US20030184924 Methods of manufacturing a tunnel magnetoresistive element, thin-film magnetic head and memory element
10/02/2003US20030184921 Excellent in MR ratio and thermal stability
10/02/2003US20030183889 Magnetic memory device
10/01/2003EP1349184A1 Magnetic memory unit and magnetic memory array
10/01/2003EP0958621B1 Component holder for a hall sensor and process for producing a component holder
10/01/2003CN1445783A Wirte circuit structure of magnetic memory array of separated multiple memory blocks
10/01/2003CN1445782A Storage device array magnetic bit with of with sharing one common line
10/01/2003CN1445781A Magnetoresistive storage device with double-tunnel junction
10/01/2003CN1445557A Fluxgate sensor integrated in printed circuit board and manufacturing method thereof
10/01/2003CN1445556A Fluxgate sensitive element integrated in semiconductor substrate and manufacturing method thereof
09/2003
09/30/2003US6627932 Magnetic random access memory comprising substrates, magnetic and nonmagnetic multilayers; semiconductors
09/25/2003WO2003079366A2 Self-aligned via contact for magnetic memory element
09/25/2003WO2003079365A1 Data storage circuit, data write method in the data storage circuit, and data storage device
09/25/2003WO2003079364A1 Magnetic storage device using ferromagnetic tunnel junction element
09/25/2003US20030181056 Method of etching a magnetic material film stack using a hard mask
09/25/2003US20030180969 Thin film polycrystalline memory structure
09/25/2003US20030180968 Method of preventing short circuits in magnetic film stacks
09/25/2003US20030179520 Magnetic sensing element provided with second antiferromagnetic layer on free magnetic layer side
09/25/2003US20030179519 Reduced electrical resistance
09/25/2003US20030179511 Detectors, computers; reducing electrical resistance; multilayer laminate
09/25/2003US20030179510 Magnetic head, magnetic head gimbal assembly, magnetic recording and reproducing apparatus, and magnetic memory
09/25/2003US20030179506 Magnetic head
09/25/2003US20030179071 Magnetoresistive element
09/25/2003US20030178705 System and method for stabilizing a magnetic tunnel junction sensor
09/24/2003CN1444296A Giant magneto-impedance effect composite wire and its preparation method
09/24/2003CN1444282A Multi-crystal storage structure, method for forming said structure and semiconductor storage device using said structure
09/24/2003CN1444274A Semiconductor device with punctured wiring and its production method
09/24/2003CN1444237A Fluxgate sensor integrated in printed circuit board and its making method
09/24/2003CN1444228A Method for spanning memory array, executing equipotential reading out and eliminating leakage current and its system
1 ... 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 ... 121