Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
11/2003
11/25/2003US6654212 Magnetic sensor capable of providing stable resistance change rate
11/25/2003US6653703 Semiconductor memory device using magneto resistive element and method of manufacturing the same
11/25/2003US6653154 Method of forming self-aligned, trenchless mangetoresistive random-access memory (MRAM) structure with sidewall containment of MRAM structure
11/25/2003US6652906 Fabrication of a magnetoresistance sensor structure having a spacer layer produced by multiple deposition and oxidation steps
11/20/2003WO2003096423A1 Semiconductor storage device and production method therefor
11/20/2003WO2003096422A1 Semiconductor storage device
11/20/2003WO2003096351A2 Memories and memory circuits
11/20/2003WO2003025942A3 Magnetic memory with spin-polarized current writing, using amorphous ferromagnetic alloys, writing method for same
11/20/2003US20030216032 Method for forming MRAM bit having a bottom sense layer utilizing electroless plating
11/20/2003US20030215961 Self-aligned, trenchless mangetoresitive random-access memory (MRAM) structure with sidewall containment of MRAM structure
11/20/2003US20030214862 Magnetic random access memory
11/20/2003US20030214839 Magnetic random access memory
11/20/2003US20030214838 Small area magnetic memory devices
11/20/2003US20030214837 Magnetic random access memory with reduced parasitic currents
11/20/2003US20030214762 Magnetic field detection sensor
11/20/2003US20030214760 Magnetoresistive device and method of manufacturing same, and thin-film magnetic head and method of manufacturing same
11/20/2003US20030214004 Spin valve transistor, magnetic reproducing head and magnetic information storage system
11/19/2003EP1363134A2 A magnetic field detection system
11/19/2003EP0844679B1 Magneto-resistance effect element, magneto-resistance effect type head, memory element, and method for manufacturing them
11/18/2003US6650512 GMR coefficient enhancement of a spin valve structure
11/18/2003US6649960 Synthetic free layer structure for MRAM devices
11/18/2003US6649957 Thin film polycrystalline memory structure
11/18/2003US6649953 Magnetic random access memory having a transistor of vertical structure with writing line formed on an upper portion of the magnetic tunnel junction cell
11/18/2003US6649423 Method for modifying switching field characteristics of magnetic tunnel junctions
11/18/2003US6649413 Synthesis and screening combinatorial arrays of zeolites
11/18/2003US6648985 Forming a laminate having an antiferromagnetic layer, a ferromagnetic layer, and at the interface between a seed layer comprising a (111) plane of face-centered cubic crystal
11/13/2003WO2003094182A1 Method of forming mram devices
11/13/2003WO2003094170A2 Layout for thermally selected cross-point mram cell
11/13/2003WO2003067600A3 Antiferromagnetically stabilized pseudo spin valve for memory applications
11/13/2003US20030211638 Method for manufacturing magnetic sensor
11/13/2003US20030210591 Magnetic memory device and magnetic substrate
11/13/2003US20030210586 Magnetic storage apparatus having dummy magnetoresistive effect element and manufacturing method thereof
11/12/2003EP1360692A2 Method for writing into magnetoresistive memory cells and magnetoresistive memory which can be written into according to said method
11/12/2003CN1455463A Magnetic controlled resistance storage device with magnetic field attenuation layer
11/12/2003CN1455414A Resistance crosspoint storage unit array having cross-coupling latch reading amplifier
11/11/2003US6646834 Magnetic transducer, thin film magnetic head, method of manufacturing magnetic transducer and method of manufacturing thin film magnetic head
11/11/2003US6646530 Configuration for minimizing the Neel interaction between two ferromagnetic layers on both sides of a non-ferromagnetic separating layer
11/11/2003US6646315 Conductive film layer for hall effect device
11/06/2003WO2003092084A1 Magnetoresistive element, manufacturing method thereof, magnetic head, magnetic memory, and magnetic recording device using the same
11/06/2003WO2003092014A1 Memory storage device with heating element
11/06/2003WO2003092013A2 Self-aligned magnetic tunneling junction and via contact
11/06/2003WO2003092011A2 Semiconductor memory device and operating method for a semiconductor memory device
11/06/2003WO2003019568A3 Control device for reversing the direction of magnetisation without an external magnetic field
11/06/2003WO2002101845A3 Method for mass production of a plurality of magnetic sensors
11/06/2003US20030207623 High frequency electrical connector
11/06/2003US20030207486 Low remanence flux concentrator for MRAM devices
11/06/2003US20030207471 Self-aligned, trenchless mangetoresitive random-access memory (MRAM) structure with sidewall containment of MRAM structure
11/06/2003US20030206473 Method and system for performing equipotential sensing across a memory array to eliminate leakage currents
11/06/2003US20030206461 Magnetoresistive memory (MRAM)
11/06/2003US20030206434 Layout for thermally selected cross-point mram cell
11/06/2003US20030206432 Minimizing errors in a magnetoresistive solid-state storage device
11/06/2003US20030206384 Spin-valve head containing closed-flux-structure domain control films
11/06/2003US20030206383 Magnetoresistive head and the fabricating method
11/05/2003EP1359621A1 Magnetoresistance storage element
11/05/2003EP1359590A1 Magnetic memory devices
11/05/2003EP1359589A2 Conductor structure for a magnetic memory
11/05/2003EP1359587A2 Memory cell arrays
11/05/2003EP1358655A2 Mram architecture and system
11/05/2003EP1358502A1 Gmr structure and method for the production thereof
11/05/2003CN1453791A Conductor structure of magnetic storing device
11/05/2003CN1453790A Thin film magnetic memory of shortened data reading data line charging time
11/04/2003US6643168 Nonvolatile magnetic storage device
11/04/2003US6643107 Spin valve thin film magnetic element and method of manufacturing the same
11/04/2003US6643104 Magnetoresistive effect thin-film magnetic head
11/04/2003US6642705 Electric current sensor
11/04/2003US6641703 Magnetic multi-layer film manufacturing apparatus
11/04/2003US6640652 Rotation angle sensor capable of accurately detecting rotation angle
10/2003
10/30/2003WO2003090289A1 Magnetoelectric transducer and its manufacturing method
10/30/2003WO2003038864B1 Magneto-resistive bit structure and method of manufacturing therefor
10/30/2003WO2003036733A3 Vertical hall sensor
10/30/2003WO2003036732A3 Compact vertical hall sensor
10/30/2003US20030203601 Method for manufacturing semiconductor thin film, and magnetoelectric conversion element provided with semiconductor thin film thereby manufactured
10/30/2003US20030203510 Protective layers for MRAM devices
10/30/2003US20030203509 Method of fabricating a self-aligned magnetic tunneling junction and via contact
10/30/2003US20030203241 Comprises chromium element/region laminated between antiferromagnetic layer and pinned magnetic layer
10/30/2003US20030203238 CPP type magnetoresistive sensor including pinned magnetic layer provided with hard magnetic region
10/30/2003US20030202407 Memory device having wide margin of data reading operation, for storing data by change in electric resistance value
10/30/2003US20030202375 Magneto resistive storage device having a magnetic field sink layer
10/30/2003US20030202272 Low impedance semiconductor integrated circuit
10/30/2003US20030200647 Pattern forming method, method of making microdevice, method of making thin-film magnetic head, method of making magnetic head slider, method of making magnetic head apparatus, and method of making magnetic recording and reproducing apparatus
10/29/2003EP1356469A2 Mtj mram series-parallel architecture
10/29/2003CN1452216A Magnetic p-n junction thin film material and mfg. method thereof
10/29/2003CN1452175A 磁存储器 Magnetic memory
10/29/2003CN1452174A Magnetic storage device
10/29/2003CN1452114A 半导体存储装置 The semiconductor memory device
10/29/2003CN1126183C Lateral Hall device
10/29/2003CN1126127C Magnetoresistance effect device, and device using the same
10/28/2003US6639834 Data register and access method thereof
10/28/2003US6639829 Configuration and method for the low-loss writing of an MRAM
10/28/2003US6639765 Magnetoresistive element and magnetoresistive device using the same
10/28/2003US6639763 Magnetic transducer and thin film magnetic head
10/28/2003US6639291 Spin dependent tunneling barriers doped with magnetic particles
10/28/2003US6639290 Hall sensor with a reduced offset signal
10/28/2003US6638774 Method of making resistive memory elements with reduced roughness
10/28/2003US6638691 Method for fabricating plate type magnetic resistance sensor chip element
10/28/2003US6638598 Laminates having a buffer layer and cover layer
10/23/2003WO2003088254A1 Storage device using resistance varying storage element and reference resistance value decision method for the device
10/23/2003WO2003088253A1 Material combinations for tunnel junction cap layer, tunnel junction hard mask and tunnel junction stack seed layer in mram processing
10/23/2003US20030199233 Multilayered film developing a magnetoresistive effect, which is present between an upper shielding layer and a lower shielding layer both formed above an AlTiC substrate, a recess for defining the lower shielding layer is formed in an
10/23/2003US20030199167 Control of MTJ tunnel area
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