Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
12/2003
12/25/2003US20030235072 Magnetic random access memory (MRAM) for spontaneous hall effect and method of writing and reading data using the MRAM
12/25/2003US20030235071 Magnetic memory device having XP cell and STr cell in one chip
12/25/2003US20030235070 Thin film magnetic memory device and semiconductor integrated circuit device including the same as one of circuit blocks
12/25/2003US20030235069 Thin film magnetic memory device conducting read operation by a self-reference method
12/25/2003US20030234429 Hall effect device with multiple layers
12/24/2003WO2003107449A1 Variable magnetoresistance device
12/24/2003WO2003107424A1 Magnetoresistive random-access memory device
12/24/2003WO2003107350A2 Magnetoresistive random access memory with reduced switching field
12/24/2003WO2002017409A3 Method of fabricating thermally stable mtj cell and apparatus
12/24/2003CN1463010A Magnetoresistive effect component and magnetic memory with such component
12/24/2003CN1463009A Thin film magnet storage device set with false unit
12/23/2003US6667901 Dual-junction magnetic memory device and read method
12/23/2003US6667897 Magnetic tunnel junction containing a ferrimagnetic layer and anti-parallel layer
12/23/2003US6667860 Integrated, on-board device and method for the protection of magnetoresistive heads from electrostatic discharge
12/23/2003US6667682 System and method for using magneto-resistive sensors as dual purpose sensors
12/23/2003US6667616 Spin valve sensor having increased GMR ratio and decreased sensitivity to crosstalk noise
12/23/2003US6667613 Method of measuring resistance of magnetoresistive element
12/23/2003US6667526 Tunneling magnetoresistive storage unit
12/23/2003US6667493 Thin-film magnetic element capable of effectively orienting magnetization direction of magnetic layer and manufacturing method thereof
12/18/2003WO2003104830A1 Thin film device with perpendicular exchange bias
12/18/2003WO2003104829A1 Sensor and method for measuring a current of charged particles
12/18/2003WO2003083910B1 Reduction of noise, and optimization of magnetic field sensitivity and electrical properties in magnetic tunnel junction devices
12/18/2003US20030231520 Magnetic memory element having controlled nucleation site in data layer
12/18/2003US20030231437 Current-perpendicular-to-plane magnetoresistive device with oxidized free layer side regions and method for its fabrication
12/18/2003US20030231436 GMR magnetic sensing element having an antiferromagnetic layer extending beyond the track width and method for making the same
12/17/2003EP1371100A1 A transpinnor-based switch and applications
12/17/2003EP1370884A2 A transpinnor-based sample-and-hold circuit and applications
12/17/2003CN1462036A Magnetroresistive direct access storage device and its manufacturing method
12/16/2003US6665205 Shared global word line magnetic random access memory
12/16/2003US6665156 Magnetoresistive head, manufacture thereof, and magnetic recording/reproducing apparatus with such magnetic head
12/16/2003US6665154 Spin valve head with a current channeling layer
12/16/2003US6665152 Magnetic head that detects leakage fluxes from a medium at a high resolution and leads the fluxes into a magneto-resistive element
12/16/2003US6664785 Assembly for measuring a magnetic field, using a bridge circuit of spin tunnel elements and a production method for the same
12/16/2003US6664579 Magnetic random access memory using bipolar junction transistor
12/16/2003US6663920 Ion implantation method for fabricating magnetoresistive (MR) sensor element
12/11/2003WO2003043017A3 Magnetic device with magnetic tunnel junction, memory array and read/write methods using same
12/11/2003WO2003007248A3 Fabrication of a high resolution, low profile credit card reader and card reader for transmission of data by sound
12/11/2003WO2002093581A3 Magnetic memory arrangement
12/11/2003US20030228726 Magnetoresistive memory device assemblies
12/11/2003US20030228713 Methods of forming magnetoresistive memory device assemblies
12/11/2003US20030228711 Methods of forming magnetoresistive memory device assemblies
12/11/2003US20030228710 Multilayer dielectric tunnel barrier used in magnetic tunnel junction devices, and its method of fabrication
12/11/2003US20030228491 Multilayer; substrate, buffer and ferromagnetic and antiferromagnetic layers
12/11/2003US20030227799 Tunnel magnetoresistive effect element, method of manufacturing tunnel magnetoresistive effect element and magnetic memory device
12/11/2003US20030227724 Synthetic free layer for CPP GMR
12/11/2003US20030227704 Bias circuit for magneto-resistive head
12/10/2003EP1369973A1 Overload current protection device using magnetic impedance element
12/10/2003EP1369882A1 Magnetoresistance effect film and spin valve reproducing head
12/10/2003EP1369875A1 Sensing data storage devices
12/10/2003EP1368830A2 Self-aligned, trenchless magnetoresistive random-access memory (mram) structure with sidewall containment of mram structure
12/10/2003CN2591723Y Nail punching thin film with laminated ferro magnetic layer
12/10/2003CN1130693C Magneto-resistive effect element and storage element
12/09/2003US6661703 Magneto-resistance effect film and memory using it
12/09/2003US6661689 Semiconductor memory device
12/09/2003US6661627 Magnetic recording device, method of adjusting magnetic head, and magnetic recording medium
12/09/2003US6661622 Method to achieve low and stable ferromagnetic coupling field
12/09/2003US6661225 Revolution detecting device
12/09/2003US6661221 Magnetic field sensing element and device having magnetoresistance element and integrated circuit formed on the same substrate
12/09/2003US6661071 Memory having plural magnetic layers and a shielding layer
12/04/2003WO2003100877A1 Magnetoresistance effect device and magnetism sensor using the same
12/04/2003US20030224620 Method and apparatus for smoothing surfaces on an atomic scale
12/04/2003US20030224608 Method for manufacturing magnetic random access memory
12/04/2003US20030224209 Magnetoresistance effect film and spin valve reproducing head
12/04/2003US20030224103 Magnetoresistance effect film and method of forming same
12/04/2003US20030223283 Magnetic memory device
12/04/2003US20030223268 Thin film magnetic memory device having dummy cell
12/04/2003US20030223158 Magnetoresistive device and method of manufacturing same, and thin-film magnetic head and method of manufacturing same
12/04/2003US20030222322 Magneto-resistive random access memory and method for manufacturing the same
12/03/2003EP1367684A1 Overload current protection device using magnetic impedance element
12/03/2003EP1366528A2 Current-responsive resistive component
12/03/2003EP1273009B1 Current conveyor and method for readout of mtj memories
12/03/2003CN1460272A Magnetic multilayer structure with improved magnetic field range
12/03/2003CN1459793A Constant voltage sensitive MRAM with series diode
12/03/2003CN1459792A Triple sampling readout of magnetic RAM having series diode
12/03/2003CN1459791A Film magnet storage device of multi-storage unit shared access element
12/02/2003US6657890 Magnetic memory device
12/02/2003US6657829 Tunneling magnetoresistive device
12/02/2003US6657826 Magnetoresistive device and method of manufacturing same, thin-film magnetic head and method of manufacturing same, head gimbal assembly and hard disk drive
12/02/2003US6657823 Differential detection read sensor, thin film head for perpendicular magnetic recording and perpendicular magnetic recording apparatus
12/02/2003US6657270 Magnetic random access memory using bipolar junction transistor, and method for fabricating the same
12/02/2003US6657246 MRAM with an effective noise countermeasure
12/02/2003US6656604 Magnetoresistive thin-film magnetic element and method for making the same
12/02/2003US6656538 Method of manufacturing magnetoresistive device, method of manufacturing thin film magnetic head, and method of forming thin film pattern
12/02/2003US6656372 Methods of making magnetoresistive memory devices
11/2003
11/27/2003WO2003098637A1 Mram-cell and array-architecture with maximum read-out signal and reduced electromagnetic interference
11/27/2003WO2003098635A1 Method of manufacturing mram offset cells in a double damascene structure with a reduced number of etch steps
11/27/2003US20030219912 Method for removal of metallic residue after plasma etching of a metal layer
11/27/2003US20030219906 Formation of combinatorial arrays of materials using solution-based methodologies
11/27/2003US20030218926 MRAM configuration having selection transistors with a large channel width
11/27/2003US20030218905 Equi-potential sensing magnetic random access memory (MRAM) with series diodes
11/27/2003US20030218902 Triple sample sensing for magnetic random access memory (MRAM) with series diodes
11/27/2003US20030218901 Thin film magnetic memory device having an access element shared by a plurality of memory cells
11/27/2003US20030218197 Magnetic random access memory
11/26/2003EP1365415A1 MRAM with voltage sources for selected and non-selected word lines and selected and non-selected bit lines
11/26/2003EP1364417A2 Keepers for mram electrodes
11/26/2003CN1459113A MTJ MRAM parallel-parallel architecture
11/26/2003CN1459094A Giant magnetoresistire sensor having self-consistent demagnetization fields
11/26/2003CN1458702A Tunnel effect magneto-resistance device and preparing method
11/25/2003US6654279 Magnetic thin film element, memory element using the same, and method for recording and reproducing using the memory element
11/25/2003US6654278 Magnetoresistance random access memory
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