| Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001) |
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| 01/28/2004 | EP1385203A2 Nonvolatile solid-state magnetic memory, method for controlling coercive force of nonvolatile solid-state magnetic memory, and method for recording in nonvolatile solid-state magnetic memory |
| 01/28/2004 | EP1385171A2 Method for recording in a nonvolatile solid-state magnetic memory |
| 01/28/2004 | EP1385151A2 Magnetoresistive element having currrent-perpendicular-to-the-plane structure |
| 01/27/2004 | US6683807 Thin film magnetic memory device for programming required information with an element similar to a memory cell and information programming method |
| 01/27/2004 | US6683802 Magnetic memory device in which influence of adjacent memory cell is controllable |
| 01/27/2004 | US6683763 Method and system for providing a self-aligned electrical contact for a TMR element |
| 01/27/2004 | US6683448 Large current detector having a hall-effect device |
| 01/27/2004 | US6683359 Hall effect device with multiple layers |
| 01/27/2004 | US6682943 Method for forming minimally spaced MRAM structures |
| 01/22/2004 | WO2004008536A1 Magnetic non-volatile memory element |
| 01/22/2004 | WO2004008167A1 Magnetic detection device |
| 01/22/2004 | US20040014246 Method for manufacturing MTJ cell of magnetic random access memory |
| 01/22/2004 | US20040014245 Method of manufacturing magnetic memory device, and magnetic memory device |
| 01/22/2004 | US20040014243 Magnetoresistive memory or sensor devices having improved switching properties and method of fabrication |
| 01/22/2004 | US20040014077 Delivering a first component of a first material and a first component of a second material to first and second region on a substrate, delivering a second component of second material to first and second region, simultaneously reacting component |
| 01/22/2004 | US20040013880 Spin dependent tunneling devices having reduced topological coupling |
| 01/22/2004 | US20040013022 Integrated magnetoresistive semiconductor memory configuration |
| 01/22/2004 | US20040012994 Multi-state magnetoresistance random access cell with improved memory storage density |
| 01/22/2004 | US20040012899 Magnetic sensor with second antiferromagnetic layer having smaller depth in height direction than free layer and manufacturing method thereof |
| 01/22/2004 | US20040012386 Magnetoresistive sensor scanning a magnetic multipole wheel |
| 01/22/2004 | US20040012056 Process flow for building MRAM structures |
| 01/22/2004 | DE19908473B4 Hall-Sensor mit reduziertem Offset-Signal Hall sensor with reduced offset signal |
| 01/22/2004 | DE10307926A1 Magnetische Dünnfilmspeichervorrichtung mit Unterdrückung interner magnetischer Störungen Thin film magnetic memory device with suppression of internal magnetic interference |
| 01/22/2004 | DE10228662A1 Magnetoresistiver Sensor A magnetoresistive sensor |
| 01/21/2004 | EP1383134A1 Memory with memory cells composed of volatile and non-volatile components |
| 01/21/2004 | EP1383133A1 A magnetic memory device and method |
| 01/21/2004 | EP1382067A2 An improved method for forming minimally spaced mram structures |
| 01/21/2004 | EP1382046A1 Compounds having giant magnetoresistance and spin-polarized tunnels, the production thereof and their use |
| 01/21/2004 | EP1381876A1 Magnetoresistive element and magnetoresistive magnetic head, magnetic recording apparatus and magnetoresistive memory device using the same |
| 01/21/2004 | CN2600826Y 磁传感器 The magnetic sensor |
| 01/21/2004 | CN1470060A An analog functional module using magnetoresistive memory technology |
| 01/21/2004 | CN1469387A Magnetic random access storage device |
| 01/21/2004 | CN1469385A Relayed electric pulse used in magnetic resistor |
| 01/21/2004 | CN1469384A Magnetic memory element for controlling nucleation position in data layer |
| 01/20/2004 | US6680862 Memory device having wide margin of data reading operation, for storing data by change in electric resistance value |
| 01/20/2004 | US6680831 Magnetoresistive element, method for manufacturing the same, and method for forming a compound magnetic thin film |
| 01/20/2004 | US6680827 Dual spin valve CPP MR with flux guide between free layers thereof |
| 01/20/2004 | US6680500 Insulating cap layer and conductive cap layer for semiconductor devices with magnetic material layers |
| 01/20/2004 | US6678940 Improved electrical insulation between the electrode layer of the magnetoresistive effect element and the lower shielding layer |
| 01/15/2004 | US20040008556 Memory device reading data according to difference in electrical resistance between selected memory cell and reference cell |
| 01/15/2004 | US20040008542 Shared volatile and non-volatile memory |
| 01/15/2004 | US20040008537 Magnetic memory device and method |
| 01/15/2004 | US20040008455 Magnetic sensing element biased by two antiferromagnetic layers above free magnetic layer and two hard bias layers at two sides of the free magnetic layer, and method for making the same |
| 01/15/2004 | US20040008453 Magnetic layer system and a component comprising such a layer system |
| 01/15/2004 | US20040008452 Magneto-resistive device, magnetic head, head suspension assembly and magnetic disk apparatus |
| 01/15/2004 | US20040008026 Magnetic field detection circuit using magnetic impedance device |
| 01/15/2004 | US20040007751 Magnetoresistive memory devices |
| 01/15/2004 | DE10228805A1 Hallsensorelement Hall sensor element |
| 01/14/2004 | EP1380668A1 Manganese alloy sputtering target and method for producing the same |
| 01/14/2004 | CN1467744A Magnetic ram and method of writing and reading data using the magnetic ram |
| 01/14/2004 | CN1467743A Memory device reading data according to difference in electrical resistance between selected memory cell and reference cell |
| 01/14/2004 | CN1467742A Thin film magnetic memory device suppressing internal magnetic noises |
| 01/14/2004 | CN1467741A Thin film magnetic memory device conducting read operation by a self-reference method |
| 01/14/2004 | CN1467704A Magnetoresistance effect film and spin valve reproducing head |
| 01/13/2004 | US6678189 Method and system for performing equipotential sensing across a memory array to eliminate leakage currents |
| 01/13/2004 | US6678187 Semiconductor memory apparatus using tunnel magnetic resistance elements |
| 01/13/2004 | US6678128 Exchange coupling film and electroresistive sensor using the same |
| 01/13/2004 | US6678126 Magnetoresistance-effect magnetic head |
| 01/13/2004 | US6677631 MRAM memory elements and method for manufacture of MRAM memory elements |
| 01/13/2004 | US6677165 Magnetoresistive random access memory (MRAM) cell patterning |
| 01/08/2004 | WO2004003478A2 Magnetoresistive sensor |
| 01/08/2004 | WO2003079366A3 Self-aligned via contact for magnetic memory element |
| 01/08/2004 | WO2003033687A3 Lift-off process for a hard etch mask for magnetic memory cells in mram devices |
| 01/08/2004 | US20040004884 Memory cell arrangement and method for the production thereof |
| 01/08/2004 | US20040004878 Methods of increasing write selectivity in an MRAM |
| 01/08/2004 | US20040004856 Magnetic random access memory |
| 01/08/2004 | US20040004792 Excellent heat resistance and electrostatic- discharge-damage resistance |
| 01/08/2004 | US20040004261 Magneto-resistive devices |
| 01/07/2004 | EP1377993A1 Method for defining reference magnetizations in layer systems |
| 01/07/2004 | CN1466148A Magneto-resistive device having magnetically soft reference |
| 01/07/2004 | CN1134047C Heterogeneous liquid-phase epitaxial growth process of magnetic semiconductor/semiconductor |
| 01/07/2004 | CN1134014C Memory cell system |
| 01/06/2004 | US6674663 Nonvolatile storage device and operating method thereof |
| 01/06/2004 | US6674662 Magnetoresistive random access memory and method for reading/writing digital information to such a memory |
| 01/06/2004 | US6674142 Semiconductor memory device utilizing tunnel magneto resistive effects and method for manufacturing the same |
| 01/06/2004 | US6673675 Methods of fabricating an MRAM device using chemical mechanical polishing |
| 01/02/2004 | EP1376602A2 Magnetic ram using thermo-magnetic spontaneous hall effect and method of writing and reading data using the magnetic ram |
| 01/02/2004 | EP1376601A2 Magneto-resistive devices |
| 01/02/2004 | EP1376600A1 Data storage device |
| 01/02/2004 | EP1376599A2 Magnetic memory device having XP Cell and STR Cell in one Chip |
| 01/02/2004 | EP1376598A1 Memory cell and memory device |
| 01/02/2004 | EP1374310A2 Nanofabrication |
| 01/01/2004 | US20040001976 Anode, cathode as magnetic shield; nonmagnetic electroconductive contactors; high density disks |
| 01/01/2004 | US20040001372 Magnetoresistive effect element and magnetic memory device |
| 01/01/2004 | US20040001353 Thin film magnetic memory device suppressing internal magnetic noises |
| 01/01/2004 | US20040001350 Magnetic tunnel junction containing a ferrimagnetic layer and anti-parallel layer |
| 12/31/2003 | WO2004001872A1 Magnetoresistive device and magnetic memory device |
| 12/31/2003 | WO2004001851A1 Large-capacity magnetic memory using carbon nano-tube |
| 12/31/2003 | WO2003076954A3 High resolution scanning magnetic microscope operable at high temperature |
| 12/31/2003 | WO2003054886A3 Increased magnetic stability devices suitable for use as sub-micron memories |
| 12/31/2003 | WO2003044800A3 Asymmetric mram cell and bit design for improving bit yield |
| 12/31/2003 | CN1465073A Mram architectures for increased write selectivity |
| 12/31/2003 | CN1133219C High-strength macroreluctance conductive polymerized film and its preparation method |
| 12/30/2003 | US6671213 Thin film magnetic memory device having redundancy repair function |
| 12/30/2003 | US6671137 Magnetoresistive head including earth members |
| 12/30/2003 | US6671136 Magnetic head and magnetic disk apparatus |
| 12/30/2003 | US6670660 Semiconductor memory device utilizing tunnel magneto resistive effects and method for manufacturing the same |
| 12/30/2003 | US6669787 Oxidizing ferromagnetic material of sense layer, depositing aluminium on oxidized ferromagnetic material of sense layer, whereafter this aluminium oxidizes to an aluminium oxide film using oxygen from oxidized ferromagnetic material |
| 12/30/2003 | US6668443 Process for manufacturing a spin valve recording head |
| 12/25/2003 | US20030235074 Magnetic memory device |