Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
03/2004
03/04/2004US20040042264 Magnetic memory devices having multiple bits per memory cell
03/04/2004US20040042263 Read operations on multi-bit memory cells in resistive cross point arrays
03/04/2004US20040042262 Memory device capable of calibration and calibration methods therefor
03/04/2004US20040042261 Combination etch stop and in situ resistor in a magnetoresistive memory and methods for fabricating same
03/04/2004US20040042258 Magnetic non-volatile memory coil layout architecture and process integration scheme
03/04/2004US20040042129 Magnetoresistive effect element, magnetic memory device and manufacturing method of magnetoresistive effect element and magnetic memory device
03/04/2004US20040042127 Spin-valve head containing partial current-screen-layer, product method of said head, and current-screen method
03/04/2004US20040042126 Magnetic head and magnetic recording/reproducing system
03/04/2004US20040041685 Magnetoresistive based electronic switch
03/04/2004US20040041679 Magnetic detecting element having beta-values selected for free magnetic layer and pinned magnetic layer
03/04/2004US20040041218 Magnetic shielding for reducing magnetic interference
03/04/2004US20040041217 Room temperature ferromagnetic semiconductor grown by plasma enhanced molecular beam epitaxy and ferromagnetic semiconductor based device
03/04/2004US20040041184 MRAM sense layer area control
03/04/2004US20040041183 Amorphous alloys for magnetic devices
03/04/2004US20040041182 MRAM sense layer area control
03/04/2004DE10307991A1 Magnetische Dünnfilmspeichervorrichtung zum Durchführen des Lesebetriebs nach einem selbstreferenzierenden Verfahren Thin film magnetic memory device to perform the read operation according to a self-referencing process
03/03/2004EP1394508A1 Azimuth meter
03/03/2004CN1479945A Information memory and manufacturing method therefor
03/03/2004CN1479922A Magnetoresistive memory and method for reading out from the same
03/03/2004CN1479874A Tunnel junction and charge perpendicular-to-plane magnetic recording sensors and method of manufacturing thereof
03/03/2004CN1479387A Magnetic reluctance element with 'current perpendicular to plane' structure
03/03/2004CN1140896C GMR magnetic sensor having improved sensitivity of magnetic detection
03/02/2004US6700761 Magnetic sensor
03/02/2004US6700757 Enhanced free layer for a spin valve sensor
03/02/2004US6700751 Multi-channel magnetoresistive head device
03/02/2004US6700371 Three dimensional conductive strap for a magnetorestrictive sensor
02/2004
02/26/2004WO2004017086A1 Gmr sensor element and use thereof
02/26/2004WO2004017085A1 Magnetoresistive layer system and sensor element comprising said layer system
02/26/2004WO2003077287A3 Etching methods for a magnetic memory cell stack
02/26/2004US20040037110 Thin film magnetic memory device conducting read operation and write operation in parallel
02/26/2004US20040037015 Electromagnetic transducer laminate, electromagnetic transducer, thin film magnetic head, magnetic head assembly, magnetic reproducing apparatus, and method of manufacturing electromagnetic transducer
02/26/2004US20040036571 Magnetically-and electrically-induced variable resistance materials and method for preparing same
02/26/2004US20040036109 Memory cell and memory device
02/26/2004US20040034991 Method for manufacturing a spin valve having an enhanced free layer
02/26/2004DE10328350A1 Isolierende Deckschicht und leitende Deckschicht in Halbleiterbauelementen mit magnetischen Materiallagen Insulating layer and conductive top layer in semiconductor devices with magnetic material layers
02/25/2004EP1391942A1 Tunnel magnetoresistance element
02/25/2004EP1391894A2 Magnetic memory array and its read/write method
02/25/2004EP1390978A2 Semiconductor memory device and method for the production thereof
02/25/2004CN1478300A Information memory device and electrionic apparatus with mounted information memory device
02/25/2004CN1478280A Circuit for non-destructive, self-normalizing reading-out of MRAM memory cells
02/25/2004CN1477638A Parallel process data readout and write in film magnetic memory
02/19/2004WO2004015791A2 Magnetoresistant device and magnetic memory device further comme nts
02/19/2004WO2004015437A1 Magnetic sensing device
02/19/2004US20040032807 Hall element, motor assembly and optical disk device
02/19/2004US20040032765 Closed flux magnetic memory
02/19/2004US20040032318 Laminated ferrimagnetic thin film, and magneto-resistive effect element and ferromagnetic tunnel element using this thin film
02/19/2004US20040032010 Amorphous soft magnetic shielding and keeper for MRAM devices
02/19/2004DE19724688B4 Drehventil-Magnetowiderstandskopf und Verfahren zum Herstellen desselben, sowie magnetisches Aufnahme-/Wiedergabegerät Rotary valve magneto-resistive head and method of manufacturing the same, and magnetic recording / reproducing apparatus,
02/19/2004CA2493438A1 Magnetic sensing device
02/18/2004EP1389800A2 Method for removal of residue from a film stack using a sacrificial mask layer
02/18/2004EP1389780A2 Semiconductor integrated circuit device
02/18/2004CN1476109A Magnetic funnel node device and storage array
02/18/2004CN1476019A Magnetic storage device with magnetic yoke layer and its mfg. method
02/17/2004US6693825 Magneto-resistive device including clad conductor
02/17/2004US6693822 Magnetic random access memory
02/17/2004US6693821 Low cross-talk electrically programmable resistance cross point memory
02/17/2004US6693774 Magnetoresistive sensor and magnetic storage apparatus
02/17/2004US6692901 Method for fabricating a resist pattern, a method for patterning a thin film and a method for manufacturing a micro device
02/17/2004US6692847 Nonmagnetic substrate, underlayer deposited on substrate, magnetic laminated film formed on underlayer; magnetic encoder with further improved thermal resistance
02/12/2004WO2004013919A1 Magnetoresistance effect element and magnetic memory unit
02/12/2004WO2004013861A2 Magnetic element utilizing spin transfer and an mram device using the magnetic element
02/12/2004WO2003085674A3 Synthetic-ferrimagnet sense-layer for high density mram applications
02/12/2004US20040029393 Method for removal of residue from a magneto-resistive random access memory (MRAM) film stack using a sacrificial mask layer
02/12/2004US20040029296 Magnetoresistive memory and method of manufacturing the same
02/12/2004US20040027853 Magnetic element utilizing spin transfer and an mram device using the magnetic element
02/12/2004US20040027844 Process flow for building MRAM structures
02/12/2004US20040027733 Magnetoresistive element and method for manufacturing the same and nonvolatile memory including the same
02/12/2004US20040027731 Magnetic detecting element
02/12/2004US20040026369 Method of etching magnetic materials
02/11/2004EP1388900A1 Magnetoresistive element
02/11/2004EP1204976B1 Method and apparatus for reading a magnetoresistive memory
02/11/2004EP0910800B1 A magnetic field sensor and method of manufacturing a magnetic field sensor
02/11/2004CN1475014A Integrated magnetoresistive semiconductor memory system
02/11/2004CN1138153C Quad-layer GMR sandwich
02/10/2004US6690554 Magnetoresistive-effect device with extended AFM layer and method for manufacturing the same
02/10/2004US6690552 Magnetoresistive film, head, and information regeneration apparatus having improved current flow characteristics
02/10/2004US6689624 Method of forming self-aligned, trenchless mangetoresitive random-access memory (MRAM) structure with sidewall containment of MRAM structure
02/10/2004US6689622 Magnetoresistive memory or sensor devices having improved switching properties and method of fabrication
02/05/2004WO2004012272A1 Spin transistor using spin filter effect and nonvolatile memory using spin transistor
02/05/2004WO2004012197A2 Magnetoresistive random access memory with soft magnetic reference layer
02/05/2004WO2003060919A3 Resistive memory elements with reduced roughness
02/05/2004WO2003049120A3 Magnetoresistive memory cell comprising a dynamic reference layer
02/05/2004US20040021990 Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory
02/05/2004US20040021462 Magnetic sensor with pointing control circuit
02/05/2004US20040021190 Methods of forming magnetoresistive memory devices
02/05/2004US20040021189 Magnetic memory device having yoke layer, and manufacturing method thereof
02/05/2004US20040021188 Insulating cap layer and conductive cap layer for semiconductor devices with magnetic material layers
02/05/2004DE19946935B4 Vorrichtung zur induktiven Strommessung mit mindestens einem Differenzsensor Device for inductive current measurement with at least one differential sensor
02/04/2004EP1387400A2 Magnetic memory device having yoke layer, and manufacturing method thereof
02/04/2004EP1386322A2 High density giant magnetoresistive memory cell
02/04/2004CN1137466C Exchange bonding film, magneto-resistant effect element, magnet head and magnet memory
02/03/2004US6687099 Magnetic head with conductors formed on endlayers of a multilayer film having magnetic layer coercive force difference
02/03/2004US6686205 Parallel synthesis and analysis
01/2004
01/29/2004WO2004010442A1 Solid material comprising a structure of almost-completely-polarised electronic orbitals, method of obtaining same and use thereof in electronics and nanoelectronics
01/29/2004WO2004010436A1 Multi-state mram with improved storage density
01/29/2004US20040019272 Magnetic sensing device
01/29/2004US20040018645 Semiconductor constructions and methods of forming semiconductor constructions
01/29/2004US20040017718 Non-volatile semiconductor memory device conducting read operation using a reference cell
01/29/2004US20040017712 Circuit for non-destructive, self-normalizing reading-out of MRAM memory cells
01/29/2004US20040017639 High-stability low-offset-field double-tunnel-junction sensor
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