Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001) |
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03/04/2004 | US20040042264 Magnetic memory devices having multiple bits per memory cell |
03/04/2004 | US20040042263 Read operations on multi-bit memory cells in resistive cross point arrays |
03/04/2004 | US20040042262 Memory device capable of calibration and calibration methods therefor |
03/04/2004 | US20040042261 Combination etch stop and in situ resistor in a magnetoresistive memory and methods for fabricating same |
03/04/2004 | US20040042258 Magnetic non-volatile memory coil layout architecture and process integration scheme |
03/04/2004 | US20040042129 Magnetoresistive effect element, magnetic memory device and manufacturing method of magnetoresistive effect element and magnetic memory device |
03/04/2004 | US20040042127 Spin-valve head containing partial current-screen-layer, product method of said head, and current-screen method |
03/04/2004 | US20040042126 Magnetic head and magnetic recording/reproducing system |
03/04/2004 | US20040041685 Magnetoresistive based electronic switch |
03/04/2004 | US20040041679 Magnetic detecting element having beta-values selected for free magnetic layer and pinned magnetic layer |
03/04/2004 | US20040041218 Magnetic shielding for reducing magnetic interference |
03/04/2004 | US20040041217 Room temperature ferromagnetic semiconductor grown by plasma enhanced molecular beam epitaxy and ferromagnetic semiconductor based device |
03/04/2004 | US20040041184 MRAM sense layer area control |
03/04/2004 | US20040041183 Amorphous alloys for magnetic devices |
03/04/2004 | US20040041182 MRAM sense layer area control |
03/04/2004 | DE10307991A1 Magnetische Dünnfilmspeichervorrichtung zum Durchführen des Lesebetriebs nach einem selbstreferenzierenden Verfahren Thin film magnetic memory device to perform the read operation according to a self-referencing process |
03/03/2004 | EP1394508A1 Azimuth meter |
03/03/2004 | CN1479945A Information memory and manufacturing method therefor |
03/03/2004 | CN1479922A Magnetoresistive memory and method for reading out from the same |
03/03/2004 | CN1479874A Tunnel junction and charge perpendicular-to-plane magnetic recording sensors and method of manufacturing thereof |
03/03/2004 | CN1479387A Magnetic reluctance element with 'current perpendicular to plane' structure |
03/03/2004 | CN1140896C GMR magnetic sensor having improved sensitivity of magnetic detection |
03/02/2004 | US6700761 Magnetic sensor |
03/02/2004 | US6700757 Enhanced free layer for a spin valve sensor |
03/02/2004 | US6700751 Multi-channel magnetoresistive head device |
03/02/2004 | US6700371 Three dimensional conductive strap for a magnetorestrictive sensor |
02/26/2004 | WO2004017086A1 Gmr sensor element and use thereof |
02/26/2004 | WO2004017085A1 Magnetoresistive layer system and sensor element comprising said layer system |
02/26/2004 | WO2003077287A3 Etching methods for a magnetic memory cell stack |
02/26/2004 | US20040037110 Thin film magnetic memory device conducting read operation and write operation in parallel |
02/26/2004 | US20040037015 Electromagnetic transducer laminate, electromagnetic transducer, thin film magnetic head, magnetic head assembly, magnetic reproducing apparatus, and method of manufacturing electromagnetic transducer |
02/26/2004 | US20040036571 Magnetically-and electrically-induced variable resistance materials and method for preparing same |
02/26/2004 | US20040036109 Memory cell and memory device |
02/26/2004 | US20040034991 Method for manufacturing a spin valve having an enhanced free layer |
02/26/2004 | DE10328350A1 Isolierende Deckschicht und leitende Deckschicht in Halbleiterbauelementen mit magnetischen Materiallagen Insulating layer and conductive top layer in semiconductor devices with magnetic material layers |
02/25/2004 | EP1391942A1 Tunnel magnetoresistance element |
02/25/2004 | EP1391894A2 Magnetic memory array and its read/write method |
02/25/2004 | EP1390978A2 Semiconductor memory device and method for the production thereof |
02/25/2004 | CN1478300A Information memory device and electrionic apparatus with mounted information memory device |
02/25/2004 | CN1478280A Circuit for non-destructive, self-normalizing reading-out of MRAM memory cells |
02/25/2004 | CN1477638A Parallel process data readout and write in film magnetic memory |
02/19/2004 | WO2004015791A2 Magnetoresistant device and magnetic memory device further comme nts |
02/19/2004 | WO2004015437A1 Magnetic sensing device |
02/19/2004 | US20040032807 Hall element, motor assembly and optical disk device |
02/19/2004 | US20040032765 Closed flux magnetic memory |
02/19/2004 | US20040032318 Laminated ferrimagnetic thin film, and magneto-resistive effect element and ferromagnetic tunnel element using this thin film |
02/19/2004 | US20040032010 Amorphous soft magnetic shielding and keeper for MRAM devices |
02/19/2004 | DE19724688B4 Drehventil-Magnetowiderstandskopf und Verfahren zum Herstellen desselben, sowie magnetisches Aufnahme-/Wiedergabegerät Rotary valve magneto-resistive head and method of manufacturing the same, and magnetic recording / reproducing apparatus, |
02/19/2004 | CA2493438A1 Magnetic sensing device |
02/18/2004 | EP1389800A2 Method for removal of residue from a film stack using a sacrificial mask layer |
02/18/2004 | EP1389780A2 Semiconductor integrated circuit device |
02/18/2004 | CN1476109A Magnetic funnel node device and storage array |
02/18/2004 | CN1476019A Magnetic storage device with magnetic yoke layer and its mfg. method |
02/17/2004 | US6693825 Magneto-resistive device including clad conductor |
02/17/2004 | US6693822 Magnetic random access memory |
02/17/2004 | US6693821 Low cross-talk electrically programmable resistance cross point memory |
02/17/2004 | US6693774 Magnetoresistive sensor and magnetic storage apparatus |
02/17/2004 | US6692901 Method for fabricating a resist pattern, a method for patterning a thin film and a method for manufacturing a micro device |
02/17/2004 | US6692847 Nonmagnetic substrate, underlayer deposited on substrate, magnetic laminated film formed on underlayer; magnetic encoder with further improved thermal resistance |
02/12/2004 | WO2004013919A1 Magnetoresistance effect element and magnetic memory unit |
02/12/2004 | WO2004013861A2 Magnetic element utilizing spin transfer and an mram device using the magnetic element |
02/12/2004 | WO2003085674A3 Synthetic-ferrimagnet sense-layer for high density mram applications |
02/12/2004 | US20040029393 Method for removal of residue from a magneto-resistive random access memory (MRAM) film stack using a sacrificial mask layer |
02/12/2004 | US20040029296 Magnetoresistive memory and method of manufacturing the same |
02/12/2004 | US20040027853 Magnetic element utilizing spin transfer and an mram device using the magnetic element |
02/12/2004 | US20040027844 Process flow for building MRAM structures |
02/12/2004 | US20040027733 Magnetoresistive element and method for manufacturing the same and nonvolatile memory including the same |
02/12/2004 | US20040027731 Magnetic detecting element |
02/12/2004 | US20040026369 Method of etching magnetic materials |
02/11/2004 | EP1388900A1 Magnetoresistive element |
02/11/2004 | EP1204976B1 Method and apparatus for reading a magnetoresistive memory |
02/11/2004 | EP0910800B1 A magnetic field sensor and method of manufacturing a magnetic field sensor |
02/11/2004 | CN1475014A Integrated magnetoresistive semiconductor memory system |
02/11/2004 | CN1138153C Quad-layer GMR sandwich |
02/10/2004 | US6690554 Magnetoresistive-effect device with extended AFM layer and method for manufacturing the same |
02/10/2004 | US6690552 Magnetoresistive film, head, and information regeneration apparatus having improved current flow characteristics |
02/10/2004 | US6689624 Method of forming self-aligned, trenchless mangetoresitive random-access memory (MRAM) structure with sidewall containment of MRAM structure |
02/10/2004 | US6689622 Magnetoresistive memory or sensor devices having improved switching properties and method of fabrication |
02/05/2004 | WO2004012272A1 Spin transistor using spin filter effect and nonvolatile memory using spin transistor |
02/05/2004 | WO2004012197A2 Magnetoresistive random access memory with soft magnetic reference layer |
02/05/2004 | WO2003060919A3 Resistive memory elements with reduced roughness |
02/05/2004 | WO2003049120A3 Magnetoresistive memory cell comprising a dynamic reference layer |
02/05/2004 | US20040021990 Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory |
02/05/2004 | US20040021462 Magnetic sensor with pointing control circuit |
02/05/2004 | US20040021190 Methods of forming magnetoresistive memory devices |
02/05/2004 | US20040021189 Magnetic memory device having yoke layer, and manufacturing method thereof |
02/05/2004 | US20040021188 Insulating cap layer and conductive cap layer for semiconductor devices with magnetic material layers |
02/05/2004 | DE19946935B4 Vorrichtung zur induktiven Strommessung mit mindestens einem Differenzsensor Device for inductive current measurement with at least one differential sensor |
02/04/2004 | EP1387400A2 Magnetic memory device having yoke layer, and manufacturing method thereof |
02/04/2004 | EP1386322A2 High density giant magnetoresistive memory cell |
02/04/2004 | CN1137466C Exchange bonding film, magneto-resistant effect element, magnet head and magnet memory |
02/03/2004 | US6687099 Magnetic head with conductors formed on endlayers of a multilayer film having magnetic layer coercive force difference |
02/03/2004 | US6686205 Parallel synthesis and analysis |
01/29/2004 | WO2004010442A1 Solid material comprising a structure of almost-completely-polarised electronic orbitals, method of obtaining same and use thereof in electronics and nanoelectronics |
01/29/2004 | WO2004010436A1 Multi-state mram with improved storage density |
01/29/2004 | US20040019272 Magnetic sensing device |
01/29/2004 | US20040018645 Semiconductor constructions and methods of forming semiconductor constructions |
01/29/2004 | US20040017718 Non-volatile semiconductor memory device conducting read operation using a reference cell |
01/29/2004 | US20040017712 Circuit for non-destructive, self-normalizing reading-out of MRAM memory cells |
01/29/2004 | US20040017639 High-stability low-offset-field double-tunnel-junction sensor |