| Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001) |
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| 03/31/2004 | CN1144183C Shielded magnetic tunnel junction magnetoresistive read head |
| 03/30/2004 | US6714446 Magnetoelectronics information device having a compound magnetic free layer |
| 03/30/2004 | US6714444 Magnetic element utilizing spin transfer and an MRAM device using the magnetic element |
| 03/30/2004 | US6714443 Thin film magnetic memory device for writing data of a plurality of bits in parallel |
| 03/30/2004 | US6714390 Giant magneto-resistive effect element, magneto-resistive effect type head, thin-film magnetic memory and thin-film magnetic sensor |
| 03/30/2004 | US6714388 Magnetic sensing element having improved magnetic sensitivity |
| 03/30/2004 | US6714374 Magnetoresistive sensor, magnetoresistive head, and magnetic recording/reproducing apparatus |
| 03/30/2004 | US6713802 Magnetic tunnel junction patterning using SiC or SiN |
| 03/30/2004 | US6713801 α-tantalum lead for use with magnetic tunneling junctions |
| 03/30/2004 | US6713195 Magnetic devices using nanocomposite materials |
| 03/25/2004 | WO2004025744A1 Magnetism-sensitive element and method for producing the same, magnetic head, encoder and magnetic storage unit using it |
| 03/25/2004 | WO2004025742A1 Magnetic field sensor comprising a hall element |
| 03/25/2004 | WO2003083499A3 Spin dependent tunneling devices having reduced topological coupling |
| 03/25/2004 | WO2003075634A3 Asymmetric dot shape for increasing select-unselect margin in mram devices |
| 03/25/2004 | US20040057897 For use in magnetic sensing applications and spin electronics |
| 03/25/2004 | US20040057277 Magnetic random access memory |
| 03/25/2004 | US20040056289 Semiconductor memory device, nonvolatile memory device and magnetic memory device provided with memory elements and interconnections |
| 03/25/2004 | US20040056288 Magnetic memory device and method of manufacturing the same |
| 03/24/2004 | EP1401031A1 Magnetoresistive device and its producing method |
| 03/24/2004 | EP1400957A2 Spin-valve head containing partial current-screening-layer, production method of said head, and current-screening method |
| 03/24/2004 | EP1399750A1 Magneto-resistive layer arrangement and gradiometer with said layer arrangement |
| 03/24/2004 | EP1399748A2 Semimanufacture for a sensor for measuring a magnetic field |
| 03/24/2004 | CN1484834A MRAM write apparatus and method |
| 03/24/2004 | CN1484359A Hall element, motor assembly and optical disk device |
| 03/24/2004 | CN1484245A Semiconductor IC device |
| 03/23/2004 | US6710987 Magnetic tunnel junction read head devices having a tunneling barrier formed by multi-layer, multi-oxidation processes |
| 03/23/2004 | US6710986 Tunneling magnetoresistive head and a process of tunneling magnetoresistive head |
| 03/23/2004 | US6710985 Magnetoresistive film, magnetoresistive head, and information regeneration apparatus |
| 03/23/2004 | US6709942 Method of fabricating magnetic yoke structures in MRAM devices |
| 03/23/2004 | US6709767 In-situ oxidized films for use as cap and gap layers in a spin-valve sensor and methods of manufacture |
| 03/23/2004 | US6709696 Stabilization of GMR devices |
| 03/18/2004 | WO2004023655A2 Magnetoresistive based electronic switch |
| 03/18/2004 | WO2003054523A3 Sensor and method for measuring the areal density of magnetic nanoparticles on a micro-array |
| 03/18/2004 | US20040053077 Magnetic film and thin film magnetic head using this magnetic film |
| 03/18/2004 | US20040052150 Magnetoresistive memory or sensor devices having improved switching properties and method of fabrication |
| 03/18/2004 | US20040052131 Information storage device and manufacturing method thereof |
| 03/18/2004 | US20040052108 Thin film magnetic memory device suppressing resistance of transistors present in current path |
| 03/18/2004 | US20040052106 Semiconductor memory device with latch circuit and two magneto-resistance elements |
| 03/18/2004 | US20040052009 Magneto resistive head and magnetic recording apparatus |
| 03/18/2004 | US20040052008 Current-perpendicular-to-the-plane structure magnetoresistive element |
| 03/18/2004 | DE10239869A1 Production of dielectric layers used in the production of electronic components, e.g. transistors or capacitors, comprises preparing a substrate, forming a dielectric layer on the substrate, and subjecting the dielectric layer to a plasma |
| 03/17/2004 | EP1398795A2 Magnetic memory cell |
| 03/17/2004 | EP1398794A2 Data storage device |
| 03/17/2004 | EP1398790A2 Magnetoresistive effect element, magnetic memory device and method of fabricating the same |
| 03/17/2004 | EP1398789A2 Magnetic random access memory with soft magnetic reference layers |
| 03/17/2004 | EP1398788A2 Magnetoresistiv data storage device |
| 03/17/2004 | CN1483222A Reluctance storage element |
| 03/17/2004 | CN1482682A Memory cell and memory device |
| 03/17/2004 | CN1482616A Thin film magnetic memory device suppressing resistance of transistors present in current path |
| 03/17/2004 | CN1482599A Recording/reproducing separated type magnetic head having differential bias type magnetic domain control structure |
| 03/17/2004 | CN1142541C Magneto-resistor and magneto-resistor head |
| 03/16/2004 | US6707711 Magnetic memory with reduced write current |
| 03/16/2004 | US6707298 Magnetic sensor |
| 03/16/2004 | US6707294 Method and program for calculating reproduction track width of magnetoresistive effect head |
| 03/16/2004 | US6707122 Extraordinary magnetoresistance at room temperature in inhomogeneous narrow-gap semiconductors |
| 03/16/2004 | US6707085 Magnetic random access memory |
| 03/16/2004 | US6707084 Antiferromagnetically stabilized pseudo spin valve for memory applications |
| 03/11/2004 | WO2004021372A1 Amorphous alloys for magnetic devices |
| 03/11/2004 | WO2004021357A1 Magnetic random access memory having a vertical write line |
| 03/11/2004 | WO2004003478A3 Magnetoresistive sensor |
| 03/11/2004 | WO2003094170A3 Layout for thermally selected cross-point mram cell |
| 03/11/2004 | US20040048104 Decreased thickness of the exchange-coupled film |
| 03/11/2004 | US20040047216 Non-volatile memory device capable of generating accurate reference current for determination |
| 03/11/2004 | US20040047213 Shared global word line magnetic random access memory |
| 03/11/2004 | US20040047206 Semiconductor memory device |
| 03/11/2004 | US20040047199 Semiconductor memory device using magneto resistive element and method of manufacturing the same |
| 03/11/2004 | US20040047196 Thin film magnetic memory device having a highly integrated memory array |
| 03/11/2004 | US20040047190 Magnetoresistance storage element |
| 03/11/2004 | US20040047179 Thin film magnetic memory device executing self-reference type data read |
| 03/11/2004 | US20040047177 Magnetic random access memory |
| 03/11/2004 | US20040047088 Giant magnetoresistive element |
| 03/11/2004 | US20040047087 Recording/reproducing separated type magnetic head having differential bias type magnetic domain control structure |
| 03/11/2004 | US20040047086 Boron doped CoFe for GMR free layer |
| 03/11/2004 | US20040047083 Tunneling magneoresistive element and method of manufacturing the same |
| 03/11/2004 | US20040047081 Robust hard bias/conductor lead structures for future GMR heads |
| 03/11/2004 | US20040046624 Magneto-resistive layer arrangement and gradiometer with said layer arrangement |
| 03/10/2004 | EP1396867A1 Room temperature ferromagnetic semiconductor grown by plasma enhanced molecular beam epitaxy and use |
| 03/10/2004 | EP1395837A2 Device for measuring a b-component of a magnetic field, a magnetic field sensor and an ammeter |
| 03/10/2004 | CN1481583A Self-aligned magnetic clad write line and method thereof |
| 03/10/2004 | CN1480946A Multiposition magnetic memory |
| 03/10/2004 | CN1480945A Thin film magnete memory having magnetic tunnel junction |
| 03/10/2004 | CN1480923A Rotary valve head contg, partial current screening layer, prodn method of said head, and current screening method |
| 03/10/2004 | CN1141743C Method for modifying spin valve with surfactant |
| 03/10/2004 | CN1141700C Exchanging mating-film, magnetoresistive effect apparatus, magnetoeffect head and mfg. method therefor |
| 03/09/2004 | US6704220 Layout for thermally selected cross-point MRAM cell |
| 03/09/2004 | US6704178 Multichannel magnetic head using magnetoresistive effect |
| 03/09/2004 | US6704177 Magnetic head with magnetic domain control structure having antiferromagnetic layer and magnetic layer |
| 03/09/2004 | US6704175 Current perpendicular-to-the-plane magnetoresistance read head |
| 03/09/2004 | US6703676 Magnetic memory device and manufacturing method thereof |
| 03/09/2004 | US6703654 Electrode which is smooth and has a low sheet resistivity |
| 03/09/2004 | US6703249 Method of fabricating magnetic random access memory operating based on tunnel magnetroresistance effect |
| 03/04/2004 | WO2003050817A3 Segmented write line architecture |
| 03/04/2004 | US20040043610 Compositions for removal of processing byproducts and method for using same |
| 03/04/2004 | US20040043562 Magnetic memory cell having an annular data layer and a soft reference layer |
| 03/04/2004 | US20040043526 Method of patterning a layer of magnetic material |
| 03/04/2004 | US20040042328 Magnetic material, memory and information reproducing method of the same |
| 03/04/2004 | US20040042315 Method for manufacture of MRAM memory elements |
| 03/04/2004 | US20040042297 Magnetic random access memory |
| 03/04/2004 | US20040042292 Semiconductor device |
| 03/04/2004 | US20040042291 Thin film magnetic memory device with magnetic tunnel junction |