| Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001) |
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| 04/22/2004 | WO2004034469A1 Magnetic storage device using ferromagnetic tunnel junction element |
| 04/22/2004 | WO2004034382A1 CPP STRUCTURE MAGNETORESISTANCE EFFECT ELEMENT AND HEADb SLIDER |
| 04/22/2004 | WO2004013861A3 Magnetic element utilizing spin transfer and an mram device using the magnetic element |
| 04/22/2004 | WO2003107350A3 Magnetoresistive random access memory with reduced switching field |
| 04/22/2004 | US20040076035 Magnetic memory |
| 04/22/2004 | US20040075958 Synthetic antiferromagnetic pinned layer with fe/fesi/fe system |
| 04/22/2004 | US20040075956 Magnetoresistive head |
| 04/22/2004 | US20040075523 Method of manufacturing magnetoresistive device capable of preventing a sense current from flowing into dead regions of a magnetoresistive element, and method of manufacturing thin-film magnetic head |
| 04/22/2004 | US20040075125 Magnetic random access memory |
| 04/22/2004 | DE10291412T5 Selbsteinstellender, grabenfreier Magneto-Widerstands-Zufallszugriffsspeicher (MRAM) Struktur mit Seitenwandeinschließung für die MRAM-Struktur Self-adjusting, grave free magnetoresistive random access memory (MRAM) structure with Seitenwandeinschließung for MRAM structure |
| 04/21/2004 | EP1411525A1 Magnetic memory array, its fabrication and write/read methods |
| 04/21/2004 | EP1411365A2 Magnetic sensor and manufacturing method therefor |
| 04/21/2004 | CN1491471A Overload current protection device using magnetic impedance element |
| 04/21/2004 | CN1491470A Overload current protection device using magnetic impedance element |
| 04/21/2004 | CN1490818A Thin-film magnetic memory and related semiconductor integrated circuit component |
| 04/21/2004 | CN1146916C Magnetic-resistance random access storage device |
| 04/21/2004 | CN1146915C MRAM device |
| 04/21/2004 | CN1146914C Device for no-loss writing magnetoresistive RAM |
| 04/21/2004 | CN1146868C Radiator of magnet pickup sensor and its radiating method |
| 04/20/2004 | US6724674 Memory storage device with heating element |
| 04/20/2004 | US6724652 Low remanence flux concentrator for MRAM devices |
| 04/20/2004 | US6724585 Magnetoresistive element and device utilizing magnetoresistance effect |
| 04/20/2004 | US6724582 Current perpendicular to plane type magnetoresistive device, magnetic head, and magnetic recording/reproducing apparatus |
| 04/20/2004 | US6723643 Method for chemical mechanical polishing of thin films using end-point indicator structures |
| 04/15/2004 | WO2004032238A1 Memory element and memory device |
| 04/15/2004 | WO2004032237A1 Magnetic memory and method of manufacturing the memory |
| 04/15/2004 | WO2004032144A2 Spacer integration scheme in mram technology |
| 04/15/2004 | WO2003092013A3 Self-aligned magnetic tunneling junction and via contact |
| 04/15/2004 | US20040072021 Exhibiting stable, large reproduction output even with a narrow track width and in which side reading can be suppressed |
| 04/15/2004 | US20040072020 Magnetic sensing element including second free magnetic layer extending wider than track width and method for fabricating same |
| 04/15/2004 | US20040070889 Magnetoresistive effect element, a magnetic head, and a magnetic reproducing apparatus therewith |
| 04/15/2004 | US20040070038 Giant planar hall effect in epitaxial ferromagnetic semiconductor devices |
| 04/15/2004 | US20040069746 Removing tantalum cap with a fluorine reactive ion etch; and, treating the sensor with an argon/hydrogen reactive ion etch. |
| 04/14/2004 | CN1489152A magneto-resistance effect element and magnetic memory |
| 04/14/2004 | CN1489135A Magneto-resistance element with current perpendicular to membrane surface structure |
| 04/13/2004 | US6721148 Magnetoresistive sensor, thin-film read/write head, and magnetic recording apparatus using the sensor |
| 04/13/2004 | US6721141 Spin-valve structure and method for making spin-valve structures |
| 04/13/2004 | US6721140 Magnetoresistive device and method of manufacturing same and thin-film magnetic head and method of manufacturing same |
| 04/13/2004 | US6721137 Magnetoresistance device |
| 04/13/2004 | US6720761 Hall device biasing circuit and magnetism detection circuit including the same |
| 04/13/2004 | US6720036 Method of production of spin valve type giant magnetoresistive thin film |
| 04/13/2004 | US6718623 Magnetoresistive device and method of manufacturing same, and thin-film magnetic head and method of manufacturing same |
| 04/08/2004 | WO2004030114A1 Magnetoresistive device and method for manufacturing same |
| 04/08/2004 | WO2004029973A2 Thermally stable magnetic element utilizing spin transfer and an mram device using the magnetic element |
| 04/08/2004 | US20040067389 Exchange coupling region between fixed magnetic and antiferromagnetic layers is specifically defined; spin-valve type thin film element mounted on hard disc devices |
| 04/08/2004 | US20040066678 Magnetic memory device implementing read operation tolerant to bitline clamp voltage (VREF) |
| 04/08/2004 | US20040066586 Magnetoresistive effective element, thin film magnetic head, magnetic head device and magnetic recording/reproducing device |
| 04/08/2004 | US20040065906 Semiconductor integrated circuit device |
| 04/08/2004 | US20040064934 Magnetic head and production method for magnetic heads |
| 04/07/2004 | EP1406273A2 Current-perpendicular-to-the-plane structure magnetoresistive element |
| 04/07/2004 | EP1406266A2 Magnetic memory and its write/read method |
| 04/07/2004 | EP1230557B1 Offset-reduced Hall element |
| 04/07/2004 | CN1488146A Non orthogonal MRAM device |
| 04/07/2004 | CN1487526A Non-volatile memory and semi-conductor integrated circuit device |
| 04/07/2004 | CN1487525A Memory equipment capable of being calibrated and calibrating method thereof |
| 04/07/2004 | CN1487524A Magnetic memory device and method |
| 04/07/2004 | CN1487523A Improved diode used in MRAM device and producing method thereof |
| 04/07/2004 | CN1487501A Magnetic detection sensor |
| 04/07/2004 | CN1487115A PLD process of preparing Ni-C film material with positive giant magnetoresistive effect at room temperature |
| 04/07/2004 | CN1145168C Read/write structure for magnetic-resistance random access memory |
| 04/07/2004 | CN1145167C Integrated memory with storage unit having magnetic-resistance storage effect |
| 04/07/2004 | CN1145146C Anti-parallel pinned read magnetic head and its producing method |
| 04/06/2004 | US6717845 Magnetic memory |
| 04/06/2004 | US6717844 Semiconductor memory device with latch circuit and two magneto-resistance elements |
| 04/06/2004 | US6717843 Polyvalent, magnetoresistive write/read memory and method for writing and reading a memory of this type |
| 04/06/2004 | US6717780 Magnetoresistive device and/or multi-magnetoresistive device |
| 04/06/2004 | US6717779 Magnetoresistive head and manufacturing method therefor |
| 04/06/2004 | US6717778 Spin-valve giant magnetoresistive head and method of manufacturing the same |
| 04/06/2004 | US6717777 Magnetic device with porous layer and method for manufacturing the same, and solid magnetic memory |
| 04/06/2004 | US6717403 Method and system for improving the efficiency of the set and offset straps on a magnetic sensor |
| 04/06/2004 | US6717402 Probe having at least one magnetic resistive element for measuring leakage magnetic field |
| 04/06/2004 | US6717194 Magneto-resistive bit structure and method of manufacture therefor |
| 04/06/2004 | US6716644 Method for forming MRAM bit having a bottom sense layer utilizing electroless plating |
| 04/06/2004 | US6716515 Castellation technique for improved lift-off of photoresist in thin-film device processing and a thin-film device made thereby |
| 04/06/2004 | CA2363504C Hall sensor with a reduced offset signal |
| 04/01/2004 | WO2003092011A3 Semiconductor memory device and operating method for a semiconductor memory device |
| 04/01/2004 | US20040063223 Spacer integration scheme in MRAM technology |
| 04/01/2004 | US20040062938 Multilayer; reflection layer with fixed magnetism, then storage layer |
| 04/01/2004 | US20040062125 Magnetic memory element having controlled nucleation site in data layer |
| 04/01/2004 | US20040062097 Magnetic recording medium and magnetic memory apparatus |
| 04/01/2004 | US20040062081 Multilayer dielectric tunnel barrier used in magnetic tunnel junction devices, and its method of fabrication |
| 04/01/2004 | US20040062074 Nonvolatile memory device with configuration switching the number of memory cells used for one-bit data storage |
| 04/01/2004 | US20040061983 Magnetic tunnel junction device with bottom free layer and improved underlayer |
| 04/01/2004 | US20040061980 Magneto-resistance effect element |
| 04/01/2004 | US20040061978 Differential detection read sensor, thin film head for perpendicular magnetic recording and perpendicular magnetic recording apparatus |
| 04/01/2004 | US20040061977 Method and apparatus for enhanced dual spin valve giant magnetoresistance effects having second spin valve self-pinned composite layer |
| 04/01/2004 | US20040061590 Magneto-resistance effect element and reproducing head |
| 04/01/2004 | US20040061180 1T1R resistive memory |
| 04/01/2004 | US20040061166 Magnetoresistive memory device and method for fabricating the same |
| 04/01/2004 | US20040061156 Magnetic random access memory having transistor of vertical structure with writing line formed on an upper portion of the magnetic tunnel junction cell |
| 04/01/2004 | US20040061154 Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic element |
| 04/01/2004 | DE10244096A1 Spinning-Current-Hallsensor mit homogener Raumladungszone Spinning current Hall sensor with a homogeneous space charge zone |
| 03/31/2004 | EP1403919A2 Magnetic memory device and method of manufacturing the same |
| 03/31/2004 | EP1403875A2 Magnetoresistive element and magnetic memory allowing high density |
| 03/31/2004 | EP1403874A1 Memory device |
| 03/31/2004 | EP1403648A1 Magnetic sensor |
| 03/31/2004 | EP1402585A2 Method for mass production of a plurality of magnetic sensors |
| 03/31/2004 | CN1485935A Strontium titanate doping and lanthanum manganese oxygen doping giant reluctivity device and its preparing process |
| 03/31/2004 | CN1485934A Barium titanate doping giant reluctivity device and its preparing process |
| 03/31/2004 | CN1485901A Method of fabricating 1t1r resistive memory array |