Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
05/2004
05/20/2004US20040095801 Thermally-assisted magnetic writing using an oxide layer and current-induced heating
05/20/2004US20040095692 Enhanced spin-valve sensor with engineered overlayer
05/20/2004US20040095690 Method of simultaneously initializing two antiferromagnetic layers in a magnetic sensor
05/20/2004US20040095127 Apparatus for measuring current density of fuel cell
05/20/2004US20040094785 Magentic memory element and memory device including same
05/19/2004EP1420411A2 Mram with asymmetric cladded conductor
05/19/2004EP1419506A2 Control device for reversing the direction of magnetisation without an external magnetic field
05/19/2004CN1498429A Magnetoresistive device and its producing method
05/19/2004CN1497749A Magnetic inductor and its manufacturing method
05/19/2004CN1497602A Magnetic rendom access stroage
05/19/2004CN1497601A Magnetic storage device, method of write-in magnetic storage device and method of read-out from magnetic storage device
05/19/2004CN1150557C Stable magnetic-resistance storage element with magnetic force
05/18/2004US6738285 Thin film magnetic memory device with high-accuracy data read structure having a reduced number of circuit elements
05/18/2004US6738234 Thin film magnetic head and magnetic transducer
05/18/2004US6737691 Magnetic random access memory
05/13/2004WO2004040665A2 Etch-stop material for improved manufacture of magnetic devices
05/13/2004WO2004040651A1 Magnetic random access memory, and production method therefor
05/13/2004WO2004040602A2 Patterning metal stack layers of magnetic switching device, utilizing a bilayer metal hardmask
05/13/2004US20040092039 Magnetic memory cell having a soft reference layer
05/13/2004US20040090856 Thin film magnetic memory device for programming required information with an element similar to a memory cell and information programming method
05/13/2004US20040090850 Magnetoresistance effect elements, magnetic heads and magnetic storage apparatus
05/13/2004US20040090844 Multi-bit magnetic memory cells
05/13/2004US20040090842 Magneto resistive storage device having a magnetic field sink layer
05/13/2004US20040090841 Triple sample sensing for magnetic random access memory (MRAM) with series diodes
05/13/2004US20040090835 Magentic memory and method for optimizing write current a in magnetic memory
05/13/2004US20040090822 MRAM and methods for manufacturing and driving the same
05/13/2004US20040090809 Memory device array having a pair of magnetic bits sharing a common conductor line
05/13/2004US20040090718 Magnetoresistive sensor with antiparallel coupled lead/sensor overlap region
05/13/2004US20040090717 Enhanced GMR magnetic head signal through pinned magnetic layer plasma smoothing
05/13/2004US20040089904 Mram with asymmetric cladded conductor
05/13/2004US20040089889 Magnetic memory device having soft reference layer
05/13/2004US20040089888 A ferromagnetic data layer of a magnetic memory element is formed with a controlled nucleation site. A Magnetic Random Access Memory ("MRAM") device may include an array of such magnetic memory elements.
05/12/2004EP1418620A2 MRAM and methods for manufacturing and driving the same
05/12/2004EP1417690A1 Layer system having an increased magnetoresistive effect and use of the same
05/12/2004CN1496569A MRAM architecture and system
05/12/2004CN1495929A Magneto-resistance element, magnetic storage and mfg. method
05/12/2004CN1495902A Magnetic storage device and mfg. method
05/12/2004CN1495899A Shared volatile and non-volatile storage
05/12/2004CN1495793A Magnetic random access storage
05/12/2004CN1149674C Single chip integrated inductance
05/12/2004CN1149578C Magnetoresistive element and use of same as storage element in storage system
05/11/2004US6735060 Spin valve sensor with a metal and metal oxide cap layer structure
05/11/2004US6735059 Magnetoresistive effective type element, thin film magnetic head, magnetic head device and magnetic disk driving device which use said magnetoresistive effective type element which includes at least three shielding films
05/11/2004US6735056 Electron device composed of laminated layers with a region between two of the layers composed of metal or metal alloy selected to be a combination of materials from which the layers are made with a cover film over end faces of the layers
05/11/2004US6734671 Magnetic sensor and manufacturing method therefor
05/11/2004US6734514 Hall effect sensor
05/06/2004WO2002073699A9 Nanofabrication
05/06/2004US20040088471 Equi-potential sensing magnetic random access memory (MRAM) with series diodes
05/06/2004US20040087134 Method for writing to the magnetoresistive memory cells of an integrated magnetoresistive semiconductor memory
05/06/2004US20040087039 Two-step magnetic tunnel junction stack deposition
05/06/2004US20040087038 Bilayer cmp process to improve surface roughness of magnetic stack in mram technology
05/06/2004US20040087037 Etch-stop material for improved manufacture of magnetic devices
05/06/2004US20040086752 For use in magnetic head for magnetic recording such as a hard disk drive (HDD) and a magnetic random access memory (MRAM)
05/06/2004US20040086751 GMR magnetic detecting element comprising current limiting layer provided in free magnetic layer and method of manufacturing the detecting element
05/06/2004US20040085827 Nonvolatile solid-state magnetic memory, method for controlling coercive force of nonvolatile solid-state magnetic memory, and method for recording in nonvolatile solid-state magnetic memory
05/06/2004US20040085811 Method for recording in a nonvolatile solid-state magnetic memory
05/06/2004US20040085809 Magnetic memory device having magnetic circuit and method of manufacture thereof
05/06/2004US20040085808 Magnetic memory device and methods for making same
05/06/2004US20040085803 Magnetic thin film element, memory element using the same, and methd for recording and reproducing using the memory element
05/06/2004US20040085689 Method and apparatus for improving soft magnetic properties of a spin valve while retaining high giant magnetoresistance
05/06/2004US20040085687 Ferromagnetic layer for magnetoresistive element
05/06/2004US20040085681 Magnetoresistance element, magnetic memory, and magnetic head
05/06/2004US20040085075 Overload current protection device using magnetic impedance element
05/06/2004US20040084400 Patterning metal stack layers of magnetic switching device, utilizing a bilayer metal hardmask
05/06/2004EP1416530A2 Treatment of a tunnel barrier layer
05/06/2004EP1416504A2 Ferromagnetic layer for magnetoresistive element
05/06/2004EP1416495A1 Treatment of a tunnel barrier layer
05/06/2004EP1416474A2 Magnetic sensor
05/06/2004DE19851323B4 Magnetischer Detektor A magnetic detector
05/06/2004DE19851037B4 Magnetfelddetektor Magnetic field detector
05/05/2004CN1494060A 磁传感器 The magnetic sensor
05/05/2004CN1148569C Field pressure sensor based on electric resistance of pickup and pressure measuring method
05/04/2004US6731535 Nonvolatile semiconductor memory device
05/04/2004US6731479 Spin-valve thin-film magnetic element with a ferromagnetic underlayer of hard bias
05/04/2004US6731475 Current-perpendicular-to-the-plane structure electromagnetic transducer element having reduced path for electric current
05/04/2004US6730949 Magnetoresistance effect device
04/2004
04/29/2004US20040083328 Method for operating an MRAM semiconductor memory configuration
04/29/2004US20040082201 Ultra-violet treatment of a tunnel barrier layer through an overlayer a tunnel junction device
04/29/2004US20040082082 Methods of increasing write selectivity in an mram
04/29/2004US20040082081 Ultra-violet treatment for a tunnel barrier layer in a tunnel junction device
04/29/2004US20040081841 Using a magneto resistive effect element
04/29/2004US20040081004 MRAM and data writing method therefor
04/29/2004US20040080874 Magnetoresistive element, method for manufacturing the same, and method for forming a compound magnetic thin film
04/29/2004US20040080873 Magnetic sensor
04/29/2004US20040080872 Magnetic sensor and manufacturing method therefor
04/29/2004US20040080850 Magnetic memory, magnetic memory array, method for recording in a magnetic memory and method for reading out from a magnetic memory
04/29/2004US20040080308 Electric current detector with hall effect sensor
04/29/2004US20040080307 Electrical current detector having a U-shaped current path and hall-effect device
04/28/2004EP1414044A2 MRAM and data writing method therefor
04/28/2004EP1412948A2 Magnetic memory unit and magnetic memory array
04/28/2004CN1492443A Every storage unit having multiple bit magnetic storage device
04/27/2004US6728132 Synthetic-ferrimagnet sense-layer for high density MRAM applications
04/27/2004US6728083 Method of making a spin valve sensor with a controlled ferromagnetic coupling field
04/27/2004US6728082 Magnetic transducer with integrated charge bleed resistor
04/27/2004US6728081 Magnetic head and magnetic disk apparatus
04/27/2004US6728064 Thin-film magnetic head having two magnetic layers, one of which includes a pole portion layer and a yoke portion layer, and method of manufacturing same
04/27/2004US6727684 Magnetic field sensor
04/27/2004US6727563 Offset-reduced hall element
04/27/2004US6727537 Magnetic memory cell
04/27/2004US6727105 Method of fabricating an MRAM device including spin dependent tunneling junction memory cells
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