| Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001) |
|---|
| 06/16/2004 | CN1505043A Nonvolatile memory cell and non-volatile semiconductor memory device |
| 06/16/2004 | CN1505041A Magnetic memory device, write current drive circuit, and write current drive method |
| 06/16/2004 | CN1505040A 磁随机存取存储器 Magnetic random access memory |
| 06/16/2004 | CN1505039A Thin film magnetic memory device with memory cell having magnetic tunnel junction |
| 06/16/2004 | CN1505038A Storage apparatus capable of prolixity displacement and high-speed reading-out |
| 06/16/2004 | CN1504997A Fabrication of self-aligned reflective/protective overlays on magnetoresistance sensors, and the sensors |
| 06/16/2004 | CN1504995A Enhanced spin-valve sensor with engineered overlayer |
| 06/16/2004 | CN1504994A Enhanced GMR magnetic head signal through pinned magnetic layer plasma smoothing |
| 06/15/2004 | US6751074 Magnetic memory having antiferromagnetically coupled recording layer |
| 06/15/2004 | US6751073 Tunneling magnetoresistive element and method of manufacturing the same |
| 06/15/2004 | US6750540 Magnetic random access memory using schottky diode |
| 06/15/2004 | US6750491 Magnetic memory device having soft reference layer |
| 06/15/2004 | US6750068 Method of fabricating a magnetic element with an improved magnetoresistance ratio with an antiparallel top and bottom pinned ferromagnetic layer |
| 06/10/2004 | US20040110367 Semiconductor device and manufacturing method thereof |
| 06/10/2004 | US20040109349 Magnetic memory device with divided write wirings |
| 06/10/2004 | US20040109348 Thin film magnetic memory device with memory cell having magnetic tunnel junction |
| 06/10/2004 | US20040109346 MRAM having two write conductors |
| 06/10/2004 | US20040109265 Magnetoresistive sensor with a thin antiferromagnetic layer for pinning antiparallel coupled tabs |
| 06/10/2004 | US20040108561 Magnetic random access memory (MRAM) devices having nonparallel main and reference magnetic resistors |
| 06/09/2004 | EP1426966A2 Nonvolatile memory cell and nonvolatile semiconductor memory device |
| 06/09/2004 | EP1426781A2 Fabrication of self-aligned reflective/protective overlays on magnetoresistance sensors, and the sensors |
| 06/09/2004 | EP1425754A2 Compensation of a bias magnetic field in a storage surface of a magnetoresistive storage cell |
| 06/09/2004 | EP1425750A2 Magnetoresistive level generator |
| 06/09/2004 | EP1342242B1 Mram arrangement with selection transistors of large channel width |
| 06/09/2004 | CN1503976A Method for operating MRAM semiconductor memory arrangement |
| 06/09/2004 | CN1503912A Magnetoresistive element and magnetoresistive magnetic head, magnetic recording apparatus and magnetoresistive memory device using same |
| 06/09/2004 | CN1503855A Manganese alloy sputtering target and mehtod for producing the same |
| 06/09/2004 | CN1503366A Common bit/common source line high density 1T1RR-RAM array and operation method |
| 06/09/2004 | CN1503269A Magnetic RAM |
| 06/09/2004 | CN1503268A Memory device capable of stable data writing |
| 06/09/2004 | CN1503230A Magneto-resistance device, sensor apparatus using sand and method for making same |
| 06/09/2004 | CN1503229A Magneto-resistance effect element, magnetic memory and magnetic head |
| 06/09/2004 | CN1503001A Magnetic sensor and mfg method, magnet array adapted to said method |
| 06/08/2004 | US6747910 Thin film magnetic memory device for selectively supplying a desired data write current to a plurality of memory blocks |
| 06/08/2004 | US6747891 Circuit for non-destructive, self-normalizing reading-out of MRAM memory cells |
| 06/08/2004 | US6747450 Weak-magnetic field sensor using printed circuit board manufacturing technique and method of manufacturing the same |
| 06/08/2004 | US6747335 Magnetic memory cell |
| 06/08/2004 | US6747301 Spin dependent tunneling barriers formed with a magnetic alloy |
| 06/08/2004 | US6746875 Magnetic memory and method of its manufacture |
| 06/03/2004 | WO2004047113A2 Magnetic memory element and memory device including same |
| 06/03/2004 | WO2004023655A3 Magnetoresistive based electronic switch |
| 06/03/2004 | US20040106295 CMP assisted liftoff micropatterning |
| 06/03/2004 | US20040106271 Processing method of forming MRAM circuitry |
| 06/03/2004 | US20040106245 Method and structure for contacting an overlying electrode for a magnetoelectronics element |
| 06/03/2004 | US20040106012 Magnetic detecting element having second antiferromagnetic layer overlying second free magnetic layer extending in track width direction beyond track width |
| 06/03/2004 | US20040105937 Fabrication of self-aligned reflective/protective overlays on magnetoresistance sensors, and the sensors |
| 06/03/2004 | US20040105326 Magnetic semiconductor memory device |
| 06/03/2004 | US20040105320 Semiconductor memory device including magneto resistive element and method of fabricating the same |
| 06/03/2004 | US20040105305 High output nonvolatile magnetic memory |
| 06/03/2004 | US20040105304 Thin film magnetic memory device with memory cells including a tunnel magnetic resistive element |
| 06/03/2004 | US20040105303 Magnetic random access memory |
| 06/03/2004 | US20040105193 Novel seed layers for fabricating spin valve heads for ultra-high density recordings |
| 06/03/2004 | US20040105192 Junction stability and yield for spin valve heads |
| 06/03/2004 | US20040103750 Manganese alloy sputtering target and method for producing the same |
| 06/03/2004 | DE10354444A1 Magnetic sensor arrangement for a rotational sensor in a vehicle, comprises a device with a magnetic impedance for acquiring a magnetic field arranged on a semiconductor substrate |
| 06/02/2004 | EP1424697A2 Common bit/common source line high density 1T1R resistive-ram array |
| 06/02/2004 | EP1424688A2 Spin valve head and magnetic recording device using the same |
| 06/02/2004 | EP1424687A2 Magnetic spin valve sensor having an exchange stabilization layer recessed from the active track edge |
| 06/02/2004 | EP1423861A1 Magnetoresistive device and electronic device |
| 06/02/2004 | EP1423855A1 Mram with midpoint generator reference |
| 06/02/2004 | EP1423721A1 A three dimensional strap for a magnetoresistive sensor |
| 06/02/2004 | CN1502136A Intrgrated magnetoresistive semiconductor memory arrangement |
| 06/02/2004 | CN1501523A Magnetic tunnel junction device and method for fabricating the same |
| 06/02/2004 | CN1501458A Ultra-violet treatment of a tunnel barrier layer through an overlayer a tunnel junction device |
| 06/02/2004 | CN1152441C Process for preparing solid oxide giant magnet resistor material |
| 06/02/2004 | CN1152440C Nanometer crystal giant magnet impedance composite material and its preparing process |
| 06/01/2004 | US6744662 Magnetoresistive memory (MRAM) |
| 06/01/2004 | US6743642 Bilayer CMP process to improve surface roughness of magnetic stack in MRAM technology |
| 06/01/2004 | US6743641 Method of improving surface planarity prior to MRAM bit material deposition |
| 05/27/2004 | US20040101978 Method of forming a barrier layer of a tunneling magnetoresistive sensor |
| 05/27/2004 | US20040101702 Magnetic tunnel junction device and method for fabricating the same |
| 05/27/2004 | US20040100855 Magneto-resistance effect element, magnetic memory and magnetic head |
| 05/27/2004 | US20040100836 Magnetic memory configuration |
| 05/27/2004 | US20040100832 Magnetic memory device |
| 05/27/2004 | US20040100820 Electron spin mechanisms for inducing magnetic-polarization reversal |
| 05/27/2004 | US20040100819 Memory device capable of stable data writing |
| 05/27/2004 | US20040100818 Magnetic random access memory |
| 05/27/2004 | US20040100814 Common bit/common source line high density 1T1R R-RAM array |
| 05/27/2004 | US20040100739 Magnetic spin valve sensor having an exchange stabilization layer recessed from the active track edge |
| 05/27/2004 | US20040099908 Cladded conductor for use in a magnetoelectronics device and method for fabricating the same |
| 05/27/2004 | DE10251566A1 GMR magnetoresistive layer method of manufacture for use in manufacture of GMR storage components or a GMR sensor elements, according to the spin-valve principle, whereby two magnetization steps are applied |
| 05/26/2004 | EP1422721A2 Magnetic memory device, write current drive circuit, and write current drive method |
| 05/26/2004 | EP1422720A2 Magnetic random access memory |
| 05/26/2004 | EP1421604A2 Fabrication of a high resolution, low profile credit card reader and card reader for transmission of data by sound |
| 05/26/2004 | EP1421398A1 Magnetoresistive sensor |
| 05/26/2004 | CN1499521A Magnetic memory element using metal inlaid tech and its mfg. method |
| 05/26/2004 | CN1499520A Ferromagnetic layer for magnetoresistance component |
| 05/26/2004 | CN1499519A Magnetic RAM, its mfg. and driving method |
| 05/26/2004 | CN1499518A Megnetic memory and its mfg. method |
| 05/25/2004 | US6741496 Electron spin mechanisms for inducing magnetic-polarization reversal |
| 05/25/2004 | US6741495 Magnetic memory device and magnetic substrate |
| 05/25/2004 | US6741494 Magnetoelectronic memory element with inductively coupled write wires |
| 05/25/2004 | US6741434 Magnetic sensor and production method thereof, ferromagnetic tunnel junction element, and magnetic head |
| 05/25/2004 | US6741433 Magneto-resistive head and magnetic tunnel junction magneto-resistive head having plural ferromagnetic layers and an anitferromagnetically coupling layer |
| 05/25/2004 | US6740948 Magnetic shielding for reducing magnetic interference |
| 05/25/2004 | US6740947 MRAM with asymmetric cladded conductor |
| 05/21/2004 | WO2004042735A1 Bilayer cmp process to improve surface roughness of magnetic stack in mram technology |
| 05/20/2004 | US20040096699 Current-responsive resistive component |
| 05/20/2004 | US20040095813 Semiconductor integrated circuit device and method of manufacturing the same |
| 05/20/2004 | US20040095802 Selection of memory cells in data storage devices |