Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2014
12/10/2014CN204011431U 功率半导体器件 Power semiconductor devices
12/10/2014CN204011430U 半导体器件 Semiconductor devices
12/10/2014CN204011429U 功率半导体器件 Power semiconductor devices
12/10/2014CN204011411U 可快速识别正负极的发光二极管 Can quickly identify the positive and negative light emitting diode
12/10/2014CN104205346A 半导体装置 Semiconductor device
12/10/2014CN104205345A 具有交替导电类型的区域的用于静电放电保护的半导体装置 The semiconductor device with alternating conductivity type region for electrostatic discharge protection
12/10/2014CN104205344A 半导体器件 Semiconductor devices
12/10/2014CN104205343A 可定制的非线性电器件 Customizable nonlinear electrical parts
12/10/2014CN104205342A 小型三维垂直nand 及其制造方法 Small three-dimensional vertical nand and its manufacturing method
12/10/2014CN104205341A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
12/10/2014CN104205340A 导电薄膜、用于形成导电薄膜的涂布液、场效应晶体管、以及用于生产场效应晶体管的方法 Electroconductive thin film for forming the conductive film coating solution, the field effect transistor, and a method for producing a field effect transistor
12/10/2014CN104205339A 碳化硅半导体器件 Silicon carbide semiconductor device
12/10/2014CN104205338A 高压场效应晶体管及其制作方法 HVFET its production methods
12/10/2014CN104205337A 具有提高的击穿电压-截止频率乘积的SiGe异质结双极晶体管 With improved breakdown voltage - cutoff frequency multiplication SiGe heterojunction bipolar transistor
12/10/2014CN104205336A 具有浅层向外扩散p+发射极区的锗化硅异质结双极晶体管 With a shallow outward diffusion silicon germanium p + emitter region of heterojunction bipolar transistor
12/10/2014CN104205335A 半导体装置以及半导体装置的制造方法 The method of manufacturing a semiconductor device and a semiconductor device
12/10/2014CN104205334A 半导体装置 Semiconductor device
12/10/2014CN104205310A 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof
12/10/2014CN104205301A 电子元器件及电子元器件的制造方法 Manufacturing method of electronic components and electronic components
12/10/2014CN104205298A 在硅基板上形成iii/v族共形层的方法 Method iii / v aromatic conformal layer is formed on a silicon substrate
12/10/2014CN104205294A 基于氮化镓纳米线的电子器件 GaN-based electronic devices nanowires
12/10/2014CN104205293A 半导体层合体及其制造方法、半导体装置的制造方法、半导体装置、掺杂剂组合物、掺杂剂注入层和掺杂层的形成方法 The method for forming a semiconductor layer laminate and a manufacturing method for manufacturing a semiconductor device, a semiconductor device, the dopant composition, dopants are implanted layer and the doped layer
12/10/2014CN104205228A 半导体存储装置 The semiconductor memory device
12/10/2014CN104205226A 存储器和逻辑器件及其执行方法 Memory and logic devices and its execution method
12/10/2014CN104204789A 基于虚拟内埋纳米线的分子传感器 Virtual buried nanowire-based molecular sensors
12/10/2014CN104201213A 一种结势垒肖特基二极管 One kind of junction barrier Schottky diode
12/10/2014CN104201212A 具有块状沟槽和埋层的浮动结碳化硅sbd器件 Float with a massive trench and buried layer junction silicon carbide devices sbd
12/10/2014CN104201211A 在4H型单晶碳化硅外延层上制备的基区渐变P<sup>+</sup>-NN<sup>+</sup>型SiC超快恢复二极管及工艺 Base areas on the 4H-type single crystal silicon carbide epitaxial layer prepared gradient P <sup> + </ sup> -NN <sup> + </ sup> type SiC ultra-fast recovery diode and craft
12/10/2014CN104201210A 二极管以及包括该二极管的组件 Diode, and the diode component comprising
12/10/2014CN104201209A 一种Si/NiO:Ag异质pn结二极管 One kind of Si / NiO: Ag heterojunction pn junction diode
12/10/2014CN104201208A 一种恒流jfet器件及其制造方法 One kind of a constant current device and a manufacturing method jfet
12/10/2014CN104201207A 一种具有自适应偏置场板的高压mos器件 A high voltage mos device adaptive bias field plates have
12/10/2014CN104201206A 一种横向soi功率ldmos器件 A widthwise ldmos soi power devices
12/10/2014CN104201205A 一种芯-壳场效应晶体管及其制备方法 One kind of a core - shell field effect transistor and its preparation method
12/10/2014CN104201204A 横向对称dmos管及其制造方法 Laterally symmetrical dmos pipe and manufacturing method thereof
12/10/2014CN104201203A 高耐压ldmos器件及其制造方法 High-voltage device and a manufacturing method ldmos
12/10/2014CN104201202A 一种具有复合势垒层的氮化镓基异质结场效应管 Having a composite layer of a gallium nitride based barrier heterojunction FET
12/10/2014CN104201201A 一种用于GaN基HEMT器件的自适应偏置场板 Adaptive bias field plate for GaN-based HEMT devices
12/10/2014CN104201200A 一种具有电偶极层结构的氮化镓基异质结场效应晶体管 Electric double layer structure having a gallium nitride-based heterojunction field effect transistor
12/10/2014CN104201199A 增强型半导体器件和半导体集成电路装置 Enhanced semiconductor device and a semiconductor integrated circuit device
12/10/2014CN104201198A 隧穿晶体管结构及其制造方法 Tunneling transistor structure and manufacturing method thereof
12/10/2014CN104201197A 一种碳化硅双极性晶体管 A silicon carbide bipolar transistor
12/10/2014CN104201196A 表面无微裂纹的Si基III族氮化物外延片 No surface microcracks Si-based III-nitride epitaxial wafers
12/10/2014CN104201195A 一种无结场效应晶体管及其制备方法 A non-junction field effect transistor and its preparation method
12/10/2014CN104201194A 一种具有超低比导通电阻特性的高压功率器件 A high-voltage power devices with ultra-low on-resistance characteristics than
12/10/2014CN104201193A 一种双栅soi器件结构及其制作方法 A dual-gate device structure and fabrication method soi
12/10/2014CN104201107A 半导体器件及其制备方法 Semiconductor device and method of preparation
12/10/2014CN104201106A 一种薄膜晶体管制作方法、系统及薄膜晶体管 A thin film transistor fabrication method, system, and a thin film transistor
12/10/2014CN104201103A 沟槽型igbt的制备方法 Preparation of trench igbt
12/10/2014CN104201102A 一种快恢复二极管frd芯片及其制作工艺 Frd in fast recovery diode chip and its manufacturing process
12/10/2014CN104201099A 超结器件制备工艺 Preparation of super-junction devices
12/10/2014CN104198761A 电容型动态量传感器及其制造方法 Capacitive dynamic quantity sensor and manufacturing method
12/10/2014CN103477439B 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof
12/10/2014CN103295964B 基于混合晶向soi及沟道应力的器件系统结构及制备方法 Mixed crystal devices based on system configuration and preparation of the soi and channel stress
12/10/2014CN103091533B 用ldmos器件实现的电流采样电路 Ldmos devices to achieve with current sampling circuit
12/10/2014CN102956696B 一种大电流p型绝缘体上硅横向绝缘栅双极型晶体管 One kind of large current p-type silicon on insulator lateral insulated gate bipolar transistor
12/10/2014CN102856395B 压力调控薄膜晶体管及其应用 Pressure-regulating film transistor and its application
12/10/2014CN102832245B 一种具有优化雪崩击穿电流路径的超结mosfet器件 An avalanche current path optimization super junction devices with mosfet
12/10/2014CN102832232B 一种高维持电压的可控硅横向双扩散金属氧化物半导体管 Maintain a high-voltage thyristor lateral double diffused metal oxide semiconductor
12/10/2014CN102820325B 一种具有背电极结构的氮化镓基异质结场效应晶体管 A back electrode structure having a gallium nitride-based heterojunction field effect transistor
12/10/2014CN102800696B 半导体元件及其制造方法 Semiconductor device and manufacturing method
12/10/2014CN102790077B 一种绝缘栅双极型晶体管 An insulated gate bipolar transistor
12/10/2014CN102790067B 一种传感器及其制造方法 A sensor and manufacturing method thereof
12/10/2014CN102769038B 一种抗闩锁n型绝缘体上硅横向双扩散场效应晶体管 An anti-latch on n-type silicon on insulator lateral double diffused field effect transistor
12/10/2014CN102760773B Nvm器件及其制造方法 Nvm device and manufacturing method thereof
12/10/2014CN102760764B 半导体器件 Semiconductor devices
12/10/2014CN102760753B 一种具有界面N<sup>+</sup>层的SOI LDMOS半导体器件 SOI LDMOS semiconductor device having interface N <sup> + </ sup> layer
12/10/2014CN102738211B 在mosfet器件中集成肖特基的方法和结构 Integrated Schottky in mosfet devices methods and structures
12/10/2014CN102738207B 超级结器件的终端保护结构及制造方法 Terminal protection structure and method of manufacture super-junction devices
12/10/2014CN102723369B 一种具有低导通压降的PiN二极管 With a low voltage drop of the PiN diode
12/10/2014CN102709324B 一种低功耗高压驱动电路及其使用的双向p型开关管 A low-power high-voltage driver circuit and its use of two-way p-type switch
12/10/2014CN102709312B 一种氧化物薄膜、薄膜晶体管及其制备方法 An oxide thin film, a thin film transistor and its preparation method
12/10/2014CN102683394B 一种增强型器件及其制造方法 An enhanced device and manufacturing method thereof
12/10/2014CN102683356B 双层隔离混合晶向应变纳米线mosfet Double strain isolated from a mixed crystal nanowires mosfet
12/10/2014CN102683202B 一种制作内建应力硅纳米线、以及制作半导体的方法 A method of making a built-stress silicon nanowires, as well as a method for fabricating a semiconductor
12/10/2014CN102683176B 一种提高金属-绝缘体-金属电容器可靠性的方法及其工艺结构 A way to improve the metal - insulator - metal capacitor structure and process reliability methods
12/10/2014CN102668062B 半导体器件 Semiconductor devices
12/10/2014CN102651334B 半导体装置及用于制造半导体装置的方法 The method of manufacturing a semiconductor device and a semiconductor device for
12/10/2014CN102646703B 单晶InP基化合物半导体材料薄膜的外延结构 Single-crystal InP epitaxial structure-based compound semiconductor material films
12/10/2014CN102646699B 一种氧化物薄膜晶体管及其制备方法 An oxide thin film transistor and its preparation method
12/10/2014CN102637740B 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof
12/10/2014CN102629623B 包含宽沟渠终端结构的半导体元件 Wide trench termination structure comprising a semiconductor element
12/10/2014CN102593181B 基于soi衬底的高压金属氧化物半导体管及制造方法 Soi-based high-pressure metal-oxide semiconductor substrate and manufacturing method
12/10/2014CN102576800B 磁致伸缩膜、磁致伸缩组件、扭力传感器、力传感器、压力传感器及其制造方法 Magnetostrictive film, a magnetostrictive assembly, torque sensors, force sensors, pressure sensors and manufacturing method thereof
12/10/2014CN102576740B 电涌保护器件 Surge protection devices
12/10/2014CN102569370B BiCMOS工艺中垂直寄生型PNP器件及制造方法 BiCMOS process type vertical parasitic PNP device and manufacturing method
12/10/2014CN102498561B 半导体装置的制造方法 The method of manufacturing a semiconductor device
12/10/2014CN102479807B 碳化硅半导体装置及其制造方法 Silicon carbide semiconductor device and manufacturing method thereof
12/10/2014CN102446979B Pin二极管及其制造方法 Pin diode and its manufacturing method
12/10/2014CN102412266B 提高soa能力的功率器件结构及其制造方法 Improve the ability of soa power device structure and manufacturing method
12/10/2014CN102299177B 一种接触的制造方法以及具有该接触的半导体器件 A method of manufacturing a semiconductor device having a contact and the contact
12/10/2014CN102263134B 一种双极性薄膜晶体管及其制备方法 A bipolar thin film transistor and its preparation method
12/10/2014CN102246306B 具有增大的击穿电压特性的基于沟槽的功率半导体器件 Trench based power semiconductor device having an increased breakdown voltage characteristics of
12/10/2014CN102214680B 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
12/10/2014CN102184965B 驱动晶体管的方法和包含由该方法驱动的晶体管的器件 The method comprises the driving transistor and the driving transistor by the method of the device
12/10/2014CN102130152B 自对准双极晶体管及其制作方法 Self-aligned bipolar transistor and its manufacturing method
12/10/2014CN101950732B 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
12/10/2014CN101931009B 薄膜晶体管和制备薄膜晶体管的方法 Method for preparing a thin film transistor and the thin film transistor
12/10/2014CN101930999B 具有非晶沟道控制层的半导体部件 Member having an amorphous semiconductor layer, a channel control
12/10/2014CN101740637B 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof
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