Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2014
12/02/2014US8901655 Diode structure for gate all around silicon nanowire technologies
12/02/2014US8901654 Semiconductor-on-insulator (SOI) field effect transistor with buried epitaxial active regions
12/02/2014US8901653 Semiconductor device
12/02/2014US8901652 Power MOSFET comprising a plurality of columnar structures defining the charge balancing region
12/02/2014US8901651 Power semiconductor device
12/02/2014US8901650 Semiconductor device, and manufacturing method for same
12/02/2014US8901649 Semiconductor device, electrostatic discharge protection device and manufacturing method thereof
12/02/2014US8901648 MOS device with low on-resistance
12/02/2014US8901647 Semiconductor device including first and second semiconductor elements
12/02/2014US8901646 Semiconductor device
12/02/2014US8901645 Semiconductor devices including bit line contact plug and peripheral transitor
12/02/2014US8901644 Field effect transistor with a vertical channel and fabrication method thereof
12/02/2014US8901643 Semiconductor device and method of manufacturing the same
12/02/2014US8901642 Charge compensation semiconductor device
12/02/2014US8901640 Semiconductor element and semiconductor device
12/02/2014US8901639 Monolithic bidirectional silicon carbide switching devices
12/02/2014US8901638 Trench-gate semiconductor device
12/02/2014US8901637 Semiconductor memory device having lowered bit line resistance
12/02/2014US8901636 Three-dimensional semiconductor device and method of fabricating the same
12/02/2014US8901635 Semiconductor memory device and method for manufacturing the same
12/02/2014US8901634 Nonvolatile memory cells with a vertical selection gate of variable depth
12/02/2014US8901633 Semiconductor storage device and method for manufacturing the same
12/02/2014US8901632 Non-volatile memory (NVM) and high-K and metal gate integration using gate-last methodology
12/02/2014US8901631 Vertical transistor in semiconductor device and method for fabricating the same
12/02/2014US8901630 Transistor, semiconductor device, and semiconductor module including the same
12/02/2014US8901629 Semiconductor device and method of manufacturing the same
12/02/2014US8901627 Jog design in integrated circuits
12/02/2014US8901626 Self-aligned contacts for field effect transistor devices
12/02/2014US8901625 Methods of making JFET devices with pin gate stacks
12/02/2014US8901624 Schottky diodes having metal gate electrodes and methods of formation thereof
12/02/2014US8901623 Super junction semiconductor device with overcompensation zones
12/02/2014US8901622 Semiconductor device and method for fabricating the same
12/02/2014US8901619 Asymmetric FinFET devices
12/02/2014US8901616 Gate stack including a high-K gate dielectric that is optimized for low voltage applications
12/02/2014US8901614 Location-related adjustment of the operating temperature distribution or power distribution of a semiconductor power component, and component for carrying out said method
12/02/2014US8901612 Thin-film heterostructure thermoelectrics in a group IIa and IV-VI materials system
12/02/2014US8901611 Bipolar field effect transistor structures and methods of forming the same
12/02/2014US8901610 Compound semiconductor device
12/02/2014US8901609 Transistor having doped substrate and method of making the same
12/02/2014US8901608 Transistor and method of fabricating the same
12/02/2014US8901607 Semiconductor device and fabricating the same
12/02/2014US8901606 Pseudomorphic high electron mobility transistor (pHEMT) comprising low temperature buffer layer
12/02/2014US8901605 Semiconductor wafer, semiconductor device, and method of producing semiconductor wafer
12/02/2014US8901604 Semiconductor devices with guard rings
12/02/2014US8901603 Surge protection circuit for power MOSFETs used as active bypass diodes in photovoltaic solar power systems
12/02/2014US8901602 Power semiconductor device and power conversion system using the device
12/02/2014US8901601 Vertical power component
12/02/2014US8901582 Light-emitting device
12/02/2014US8901581 Semiconductor light emitting device having multi-cell array and manufacturing method thereof, light emitting module, and illumination apparatus
12/02/2014US8901578 LED module having LED chips as light source
12/02/2014US8901577 Organic light-emitting display device and method of manufacturing the same
12/02/2014US8901576 Silicon photonics wafer using standard silicon-on-insulator processes through substrate removal or transfer
12/02/2014US8901574 Light emitting diodes
12/02/2014US8901573 Silicon carbide semiconductor device and method of manufacturing the same
12/02/2014US8901572 Semiconductor device and method for fabricating the same
12/02/2014US8901571 Semiconductor device
12/02/2014US8901570 Epitaxial silicon carbide single crystal substrate and process for producing the same
12/02/2014US8901569 Power semiconductor device
12/02/2014US8901568 Silicon carbide insulating gate type semiconductor device and fabrication method thereof
12/02/2014US8901567 Semiconductor device and manufacturing method thereof
12/02/2014US8901566 High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture
12/02/2014US8901565 Thin film transistor comprising pixel electrode
12/02/2014US8901564 Array substrate and method of manufacturing the same
12/02/2014US8901562 Radiation imaging device, radiation imaging display system, and transistor
12/02/2014US8901561 Method for manufacturing display device
12/02/2014US8901560 Display device and manufacturing method therefor
12/02/2014US8901559 Semiconductor device having inverter circuit with terminal electrically connected to transistor that includes oxide semiconductor material
12/02/2014US8901558 Thin film transistor having multiple gates
12/02/2014US8901557 Semiconductor device
12/02/2014US8901556 Insulating film, method for manufacturing semiconductor device, and semiconductor device
12/02/2014US8901555 Light sensing device
12/02/2014US8901554 Semiconductor device including channel formation region including oxide semiconductor
12/02/2014US8901553 Semiconductor device and manufacturing method thereof
12/02/2014US8901552 Top gate thin film transistor with multiple oxide semiconductor layers
12/02/2014US8901549 Organic light emitting diode touch display panel
12/02/2014US8901548 Dual-mode pixel including emissive and reflective devices and dual-mode display with the same
12/02/2014US8901547 Stacked structure organic light-emitting transistors
12/02/2014US8901546 Organic light-emitting panel, manufacturing method thereof, and organic display device
12/02/2014US8901544 Organic thin film transistor with ion exchanged glass substrate
12/02/2014US8901539 Organic electroluminescence device and luminescence apparatus
12/02/2014US8901538 Nano resonator and manufacturing method thereof
12/02/2014US8901537 Transistors with high concentration of boron doped germanium
12/02/2014US8901536 Transistor having graphene base
12/02/2014US8901535 Semiconductor nanoparticle assembly
12/02/2014US8901534 Coalesced nanowire structures with interstitial voids and method for manufacturing the same
12/02/2014US8901533 Semiconductor devices and methods of manufacturing the same
12/02/2014US8901531 Magnetic memory device with varying direction of magnetization and method of manufacturing the same
12/02/2014US8901530 Nonvolatile memory device using a tunnel oxide as a passive current steering element
12/02/2014US8901529 Memory array with self-aligned epitaxially grown memory elements and annular FET
12/02/2014US8901528 Phase-change random access memory and method of manufacturing the same
12/02/2014US8901527 Resistive random access memory structure with tri-layer resistive stack
12/02/2014US8901526 Variable resistive memory device
12/02/2014US8901005 Method for simultaneously forming features of different depths in a semiconductor substrate
12/02/2014US8900984 Nonvolatile semiconductor memory device and method for manufacturing same
12/02/2014US8900980 Defect-free SiGe source/drain formation by epitaxy-free process
12/02/2014US8900978 Methods for making a semiconductor device with shaped source and drain recesses and related devices
12/02/2014US8900975 Nanopore sensor device
12/02/2014US8900973 Method to enable compressively strained pFET channel in a FinFET structure by implant and thermal diffusion
12/02/2014US8900968 Method for manufacturing a semiconductor device
12/02/2014US8900962 Method for manufacturing semiconductor device
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