Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2014
12/17/2014CN104221151A 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof
12/17/2014CN104221147A 半导体集成电路装置 The semiconductor integrated circuit device
12/17/2014CN104221130A 与化合物半导体的铜互连相关的改善的结构、装置和方法 Compound semiconductor with improved copper interconnects associated structures, devices and methods
12/17/2014CN104221126A 径向结半导体纳米结构的低温制造方法、径向结器件以及包括径向结纳米结构的太阳能电池 Low temperature method of manufacturing a junction semiconductor nanostructures radial, radial junction device and a solar cell including a radial junction nanostructure
12/17/2014CN104218100A 一种集成电路及其组合电容与实现方法 An integrated and combined capacitance and implementation
12/17/2014CN104218099A 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof
12/17/2014CN104218098A 一种Ni0:Cu/Zn0异质pn结二极管 One kind Ni0: Cu / Zn0 heterojunction pn junction diode
12/17/2014CN104218097A 一种Si/NiO:Cu异质pn结二极管 One kind of Si / NiO: Cu pn heterojunction diode
12/17/2014CN104218096A 钙钛矿结构的无机金属氧化物半导体薄膜及其金属氧化物薄膜晶体管 Inorganic metal oxide and metal oxide semiconductor thin film transistor perovskite structure
12/17/2014CN104218095A 一种薄膜晶体管及其制备方法、阵列基板和显示装置 A thin film transistor and its preparation method, the array substrate and a display device
12/17/2014CN104218094A 一种薄膜晶体管、显示基板及显示装置 A thin film transistor, a display substrate and a display device
12/17/2014CN104218093A 薄膜晶体管结构 Thin-film transistor structure
12/17/2014CN104218092A 一种薄膜晶体管及其制备方法、阵列基板和显示装置 A thin film transistor and its preparation method, the array substrate and a display device
12/17/2014CN104218091A 薄膜晶体管及包括该薄膜晶体管的有机发光二极管显示器 Thin film transistor and an organic light emitting diode display including the thin film transistor
12/17/2014CN104218090A 薄膜晶体管及其制造方法和具有该薄膜晶体管的显示装置 A thin film transistor and manufacturing method thereof and a display device having the thin film transistor
12/17/2014CN104218089A 阶梯栅介质双层石墨烯场效应晶体管及其制备方法 Ladder gate dielectric bilayer graphene field effect transistor and its preparation method
12/17/2014CN104218088A 基于折叠漂移区的soi耐压结构及功率器件 Soi pressure fold structure and power devices based on the drift region
12/17/2014CN104218087A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
12/17/2014CN104218086A 具有共面形貌的多高度finfet Morphology having coplanar multilevel finfet
12/17/2014CN104218085A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
12/17/2014CN104218084A 半导体功率器件及其制造方法 The semiconductor power device and manufacturing method thereof
12/17/2014CN104218083A 调整半导体器件中的应变 Adjustment of the semiconductor device in strain
12/17/2014CN104218082A 高迁移率鳍型场效应晶体管及其制造方法 High mobility of fin-type field effect transistor and its manufacturing method
12/17/2014CN104218081A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
12/17/2014CN104218080A 射频ldm0s器件及其制造方法 RF ldm0s device and manufacturing method thereof
12/17/2014CN104218079A 半导体器件以及制造半导体器件的方法 A semiconductor device and a method of manufacturing a semiconductor device
12/17/2014CN104218078A 具有漏极在顶部的功率晶体管及其形成方法 Having a drain at the top of the power transistor and method of forming
12/17/2014CN104218077A Esd晶体管 Esd transistor
12/17/2014CN104218076A 双高阻层槽形栅多晶硅结构的联栅晶体管 Union high resistance layer trough double-gate transistor gate polysilicon structure
12/17/2014CN104218075A 半导体器件和半导体器件的制造方法 The method of manufacturing a semiconductor device and a semiconductor device
12/17/2014CN104218074A 一种非晶半导体薄膜及其制备方法和应用 An amorphous semiconductor film and preparation method and application
12/17/2014CN104218073A 高信号摆幅的图像传感器像素及其操作方法 High signal swing of the image sensor pixel and its method of operation
12/17/2014CN104218072A 一种面接触型二极管 A surface-contact diode
12/17/2014CN104218071A 一种平面型二极管 A planar diode
12/17/2014CN104218047A 高饱和容量的图像传感器像素及其工作方法 The image sensor pixel and its working methods with high saturation capacity
12/17/2014CN104218039A 显示面板以及显示装置 Display panel and a display device
12/17/2014CN104218000A 晶体管及其形成方法 Transistor and method of forming
12/17/2014CN104217992A 半导体器件及其形成方法 Semiconductor device and method for forming
12/17/2014CN104217985A 半导体器件和浅沟槽的制作方法 Fabrication of a semiconductor device and shallow trench
12/17/2014CN104217962A 晶体管以及制造晶体管的方法 The method of manufacturing a transistor and a transistor
12/17/2014CN104217959A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
12/17/2014CN104217957A 晶体管及其形成方法 Transistor and method of forming
12/17/2014CN104217956A Pm0s晶体管及其制作方法 Pm0s transistor and its manufacturing method
12/17/2014CN104217955A N型晶体管及其制作方法、互补金属氧化物半导体 N-type transistor and its manufacturing method, complementary metal oxide semiconductor
12/17/2014CN104217953A Pm0s晶体管及其制作方法 Pm0s transistor and its manufacturing method
12/17/2014CN104217951A 一种半导体器件及其制造方法 A semiconductor device and manufacturing method thereof
12/17/2014CN104217950A 一种平面vdm0s器件及其制造方法 A flat vdm0s device and manufacturing method
12/17/2014CN104217949A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
12/17/2014CN104217945A 双极晶体管、半导体器件和双极晶体管的形成方法 The method of forming a bipolar transistor, a semiconductor device and a bipolar transistor
12/17/2014CN104217933A 半导体结构及其形成方法 And method of forming a semiconductor structure
12/17/2014CN104217931A 一种石墨烯掺杂的方法及掺杂石墨烯 One kind of graphene doping method and doped graphene
12/17/2014CN103262250B 半导体装置和显示装置 The semiconductor device and a display device
12/17/2014CN102903663B 具有封装隔离区域的半导体装置及其制造方法 A semiconductor device and manufacturing method of a package isolated area
12/17/2014CN102856391B 主动元件、驱动电路结构以及显示面板 Active components, and a display panel driving circuit structure
12/17/2014CN102804360B 半导体装置 Semiconductor device
12/17/2014CN102760756B 一种带浮空场板的超结金属氧化物场效应管终端结构 Super-junction metal oxide with a floating field plate terminal FET structure
12/17/2014CN102742013B 柔性半导体装置的制造方法 The method of manufacturing a flexible semiconductor device
12/17/2014CN102683416B Soim0s晶体管 Soim0s transistor
12/17/2014CN102664190B 嵌入式外延外基区双极晶体管及其制备方法 Embedded epitaxial base bipolar transistor outside its preparation method
12/17/2014CN102651311B 一种低温多晶硅薄膜的制备方法及低温多晶硅薄膜 A low-temperature polysilicon thin film preparation method and low-temperature polysilicon thin film
12/17/2014CN102640294B 将湿式处理用于源极-漏极金属蚀刻从而制造金属氧化物或金属氮氧化物tft的方法 Drain metal etching to produce metal oxide or metal oxynitride tft method - a source for the wet treatment
12/17/2014CN102629608B 一种阵列基板及其制造方法和显示装置 One kind of array substrate and a display device and manufacturing method thereof
12/17/2014CN102569366B 高介电系数金属栅极电极结构 High dielectric constant metal gate electrode structure
12/17/2014CN102522428B 高压ldm0s结构 High pressure ldm0s structure
12/17/2014CN102428564B 具有多个阈值电压的纳米线网的场效应晶体管 Having a plurality of threshold voltages of the field effect transistor nanowire network
12/17/2014CN102308388B 用于改善量子阱器件中的并行传导的设备和方法 Device and method for improving the quantum well devices for parallel conduction
12/17/2014CN102148137B Mim电容器及其形成工艺 Mim capacitor and formation process
12/17/2014CN102044568B 薄膜晶体管及其制造方法 A thin film transistor and manufacturing method thereof
12/17/2014CN101740571B 半导体集成电路装置 The semiconductor integrated circuit device
12/17/2014CN101719510B 量子干涉晶体管及其制造和操作方法 Quantum interference transistor and its manufacturing and operating methods
12/17/2014CN101641778B 半导体集成电路装置 The semiconductor integrated circuit device
12/16/2014US8913417 Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
12/16/2014US8912985 Method for driving display device
12/16/2014US8912821 Logic cells based on spin diode and applications of same
12/16/2014US8912668 Electrical connections for chip scale packaging
12/16/2014US8912667 Packaged integrated circuit using wire bonds
12/16/2014US8912665 Dicing tape-integrated film for semiconductor back surface
12/16/2014US8912662 Wafer-level package and method of manufacturing the same
12/16/2014US8912659 Stacked semiconductor package and method for manufacturing the same
12/16/2014US8912658 Interconnect structure with enhanced reliability
12/16/2014US8912657 Semiconductor device
12/16/2014US8912655 Semiconductor memory device, method of manufacturing the same and method of forming contact structure
12/16/2014US8912647 Semiconductor device for smoothing the voltage of the end face of a drain of a high frequency semiconductor chip
12/16/2014US8912646 Integrated circuit assembly and method of making
12/16/2014US8912639 IC package with embedded transformer
12/16/2014US8912632 Semiconductor device
12/16/2014US8912631 High on-state breakdown heterojunction bipolar transistor
12/16/2014US8912629 Semiconductor devices and methods for fabricating the same
12/16/2014US8912625 Semiconductor-on-insulator device with asymmetric structure
12/16/2014US8912624 Semiconductor substrate and method for manufacturing the same
12/16/2014US8912623 Fast recovery diode
12/16/2014US8912622 Semiconductor device
12/16/2014US8912621 Trench schottky devices
12/16/2014US8912614 Magnetic tunnel junction devices having magnetic layers formed on composite, obliquely deposited seed layers
12/16/2014US8912612 Silicon nitride gate encapsulation by implantation
12/16/2014US8912611 Semiconductor device having a high-K gate dielectric layer
12/16/2014US8912610 Structure and method for MOSFETS with high-K and metal gate structure
12/16/2014US8912609 Low extension resistance III-V compound fin field effect transistor
12/16/2014US8912607 Replacement metal gate structures providing independent control on work function and gate leakage current
12/16/2014US8912604 Semiconductor device having buried bit lines and method for fabricating the same
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