Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2014
12/04/2014US20140353739 Semiconductor device and fabrication method thereof
12/04/2014US20140353738 Floating gate ultrahigh density vertical nand flash memory and method of making thereof
12/04/2014US20140353736 Field-effect transistor
12/04/2014US20140353735 Localized fin width scaling using a hydrogen anneal
12/04/2014US20140353734 Semiconductor devices and methods of fabrication with reduced gate and contact resistances
12/04/2014US20140353733 Protection of the gate stack encapsulation
12/04/2014US20140353732 Halo region formation by epitaxial growth
12/04/2014US20140353731 Tuning Strain in Semiconductor Devices
12/04/2014US20140353730 Low gate-to-drain capacitance fully merged finfet
12/04/2014US20140353729 Semiconductor structure and method for forming the same
12/04/2014US20140353726 Lateral bipolar transistors having partially-depleted intrinsic base
12/04/2014US20140353725 Semiconductor device and method of forming the device by forming monocrystalline semiconductor layers on a dielectric layer over isolation regions
12/04/2014US20140353724 Semiconductor device and method of manufacturing the same
12/04/2014US20140353723 High Voltage Durability III-Nitride Device
12/04/2014US20140353722 Graphene capped hemt device
12/04/2014US20140353721 Bulk finfet with controlled fin height and high-k liner
12/04/2014US20140353720 Semiconductor device and method of manufacturing semiconductor device
12/04/2014US20140353719 Semiconductor Devices and Fabricating Methods Thereof
12/04/2014US20140353718 Silicon-on-nothing transistor semiconductor structure with channel epitaxial silicon-germanium region
12/04/2014US20140353717 Silicon-on-nothing transistor semiconductor structure with channel epitaxial silicon region
12/04/2014US20140353716 Method of making a semiconductor device using a dummy gate
12/04/2014US20140353715 Finfet device and fabrication method thereof
12/04/2014US20140353714 Methods for making a semiconductor device with shaped source and drain recesses and related devices
12/04/2014US20140353689 Thin film transistor and manufacturing method thereof and display comprising the same
12/04/2014US20140353686 Semiconductor device
12/04/2014US20140353685 Semi-Polar III-Nitride Films and Materials and Method for Making the Same
12/04/2014US20140353684 Silicon carbide epitaxial wafer and method for fabricating the same
12/04/2014US20140353683 Semiconductor device and method of manufacturing the same
12/04/2014US20140353682 Wide Band Gap Semiconductor Wafers Grown and processed in a Microgravity Environment and Method of Production
12/04/2014US20140353681 Compound semiconductor device
12/04/2014US20140353680 Gallium Nitride Semiconductor Structures With Compositionally-Graded Transition Layer
12/04/2014US20140353678 Semiconductor device and method for manufacturing same
12/04/2014US20140353677 Low-defect semiconductor device and method of manufacturing the same
12/04/2014US20140353675 Electrode, mis semiconductor device and manufacturing method of electrode
12/04/2014US20140353674 Semiconductor device
12/04/2014US20140353673 Semiconductor apparatus
12/04/2014US20140353667 Semiconductor Device and Manufacturing Method Therefor
12/04/2014US20140353663 Semiconductor device and method for manufacturing the same
12/04/2014US20140353661 Thin film transistor array substrate and method of manufacturing the same
12/04/2014US20140353658 Oxide sputtering target, thin film transistor using the same, and method for manufacturing thin film transistor
12/04/2014US20140353648 P-type oxide, composition for producing p-type oxide, method for producing p-type oxide, semiconductor element, display element, image display device, and system
12/04/2014US20140353593 Tunnel field effect transistor and method for making thereof
12/04/2014US20140353591 Transistor using single crystal silicon nanowire and method for manufacturing same
12/04/2014US20140353590 Replacement gate self-aligned carbon nanostructure transistor
12/04/2014US20140353589 Replacement gate self-aligned carbon nanostructure transistor
12/04/2014US20140353588 Quantum interference device
12/04/2014US20140353587 Epitaxial wafer for heterojunction type field effect transistor
12/04/2014US20140353574 Field effect transistor structure comprising a stack of vertically separated channel nanowires
12/04/2014US20140353468 Isolation structure and method for forming the same, and image sensor including the isolation structure and method for fabricating the image sensor
12/04/2014US20140352787 Direct wafer bonding
12/02/2014US8902644 Semiconductor storage device and its manufacturing method
12/02/2014US8902384 Quantum rod light-emitting display device
12/02/2014US8902123 Semiconductor device with wireless communication
12/02/2014US8901949 Probe card for testing a semiconductor chip
12/02/2014US8901838 Semiconductor device, LED driving circuit, and apparatus for displaying an image
12/02/2014US8901752 Tuning the efficiency in the transmission of radio-frequency signals using micro-bumps
12/02/2014US8901748 Direct external interconnect for embedded interconnect bridge package
12/02/2014US8901747 Semiconductor chip layout
12/02/2014US8901745 Three-dimensional semiconductor devices
12/02/2014US8901743 Fabrication of semiconductor device including chemical mechanical polishing
12/02/2014US8901739 Embedded chip package, a chip package, and a method for manufacturing an embedded chip package
12/02/2014US8901735 Connector design for packaging integrated circuits
12/02/2014US8901725 Wiring board and method of manufacturing the same, and semiconductor device and method of manufacturing the same
12/02/2014US8901724 Semiconductor package with embedded die and its methods of fabrication
12/02/2014US8901720 Method for forming narrow structures in a semiconductor device
12/02/2014US8901717 Semiconductor device and manufacturing method
12/02/2014US8901715 Method for manufacturing a marked single-crystalline substrate and semiconductor device with marking
12/02/2014US8901714 Transmission line formed adjacent seal ring
12/02/2014US8901702 Programmable electrical fuse with temperature gradient between anode and cathode
12/02/2014US8901700 Semiconductor structures
12/02/2014US8901699 Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection
12/02/2014US8901698 Schottky barrier diode and method for manufacturing schottky barrier diode
12/02/2014US8901687 Magnetic device with a substrate, a sensing block and a repair layer
12/02/2014US8901686 Mounting structure of chip type electric element and electric apparatus having chip type electric element on flexible board
12/02/2014US8901685 Magnetic materials having superparamagnetic particles
12/02/2014US8901683 Micro electro mechanical system (MEMS) microphone and fabrication method thereof
12/02/2014US8901682 Acoustic transducers with perforated membranes
12/02/2014US8901681 Method and apparatus for attachment of MEMS devices
12/02/2014US8901680 Graphene pressure sensors
12/02/2014US8901678 Light-assisted biochemical sensor
12/02/2014US8901677 Nucleation interface for high-k layer on germanium
12/02/2014US8901676 Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) having a high drain-to-body breakdown voltage (Vb), a method of forming an LEDMOSFET, and a silicon-controlled rectifier (SCR) incorporating a complementary pair of LEDMOSFETs
12/02/2014US8901674 Scaling of metal gate with aluminum containing metal layer for threshold voltage shift
12/02/2014US8901673 Semiconductor device having ring-shaped gate electrode, design apparatus, and program
12/02/2014US8901672 Transistor having all-around source/drain metal contact channel stressor and method to fabricate same
12/02/2014US8901671 Scalable construction for lateral semiconductor components having high current-carrying capacity
12/02/2014US8901670 Semiconductor device including multiple metal semiconductor alloy region and a gate structure covered by a continuous encapsulating layer
12/02/2014US8901669 Method of manufacturing an IC comprising a plurality of bipolar transistors and IC comprising a plurality of bipolar transistors
12/02/2014US8901668 Semiconductor device having insulating film with different stress levels in adjacent regions and manufacturing method thereof
12/02/2014US8901667 High performance non-planar semiconductor devices with metal filled inter-fin gaps
12/02/2014US8901666 Semiconducting graphene structures, methods of forming such structures and semiconductor devices including such structures
12/02/2014US8901665 Gate structure for semiconductor device
12/02/2014US8901664 High-K/metal gate CMOS finFET with improved pFET threshold voltage
12/02/2014US8901662 CMOS structures and methods for improving yield
12/02/2014US8901661 Semiconductor device with first and second field-effect structures and an integrated circuit including the semiconductor device
12/02/2014US8901660 Semiconductor structure and fault location detecting system
12/02/2014US8901659 Tapered nanowire structure with reduced off current
12/02/2014US8901658 Thin film transistor
12/02/2014US8901657 Integrated capacitor having an overhanging top capacitor plate
12/02/2014US8901656 Semiconductor wafer, field-effect transistor, method of producing semiconductor wafer, and method of producing field-effect transistor
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