Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2014
11/27/2014US20140346574 Asymmetric finfet semiconductor devices and methods for fabricating the same
11/27/2014US20140346573 Semiconductor device including embedded crystalline back-gate bias planes, related design structure and method of fabrication
11/27/2014US20140346568 Low Temperature Ohmic Contacts for III-N Power Devices
11/27/2014US20140346567 Elemental semiconductor material contactfor high electron mobility transistor
11/27/2014US20140346566 Contact metallurgy for self-aligned high electron mobility transistor
11/27/2014US20140346565 Mos transistors and fabrication methods thereof
11/27/2014US20140346564 Multi-Threshold Voltage FETs
11/27/2014US20140346562 Trench insulated-gate bipolar transistor and manufacture method thereof
11/27/2014US20140346561 Semiconductor device
11/27/2014US20140346560 Protection device and related fabrication methods
11/27/2014US20140346559 Ultra-Fast Breakover Diode
11/27/2014US20140346558 Rectifying device and method for manufacturing the same
11/27/2014US20140346531 SiC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
11/27/2014US20140346530 Semiconductor device and method of manufacturing the same
11/27/2014US20140346529 Semiconductor device and method for manufacturing the semiconductor device
11/27/2014US20140346528 Vertical-channel type junction sic power fet and method of manufacturing same
11/27/2014US20140346527 Method of fabricating a gallium nitride p-i-n diode using implantation
11/27/2014US20140346526 Semiconductor device and method of manufacturing semiconductor device
11/27/2014US20140346525 Semiconductor device and manufacturing method thereof
11/27/2014US20140346523 Enhanced GaN Transistor and the Forming Method Thereof
11/27/2014US20140346522 Method and system for co-packaging vertical gallium nitride power devices
11/27/2014US20140346515 Semiconductor device and method for manufacturing semiconductor device
11/27/2014US20140346508 Semiconductor device
11/27/2014US20140346507 Semiconductor device and manufacturing method thereof
11/27/2014US20140346505 Memory device and manufacturing method the same
11/27/2014US20140346504 Active matrix substrate
11/27/2014US20140346502 Semiconductor device
11/27/2014US20140346501 Semiconductor device and manufacturing method thereof
11/27/2014US20140346500 Oxide semiconductor film and formation method thereof
11/27/2014US20140346498 Thin film transistor, display substrate and method of manufacturing a thin film transistor
11/27/2014US20140346497 Thin-film transitor and method for manufacturing the same
11/27/2014US20140346495 Stable high mobility motft and fabrication at low temperature
11/27/2014US20140346442 Materials and methods for the preparation of nanocomposites
11/27/2014US20140346436 Printable inks with silicon/germanium based nanoparticles with high viscosity alcohol solvents
11/27/2014US20140345686 High-throughput continuous gas-phase synthesis of nanowires with tunable properties
11/27/2014US20140345583 Semiconductor device and internal combustion engine ignition device
11/25/2014US8897089 Nonvolatile memory devices
11/25/2014US8897067 Nonvolatile memory cells and methods of making such cells
11/25/2014US8897060 Magnetoresistance effect element and magnetic memory
11/25/2014US8896778 Liquid crystal display device
11/25/2014US8896777 Semiconductor device comprising a spacer wherein the spacer has an opening through which a pixel electrode is connected to a first transistor
11/25/2014US8896775 Electro-optical device and electronic apparatus
11/25/2014US8896734 Solid-state image sensor, method of manufacturing the same, and camera
11/25/2014US8896506 Semiconductor device and driving method thereof
11/25/2014US8896136 Alignment mark and method of formation
11/25/2014US8896128 Integrated circuit, a semiconductor die arrangement and a method for manufacturing an integrated circuit
11/25/2014US8896127 Via structure and via etching process of forming the same
11/25/2014US8896126 Packaging DRAM and SOC in an IC package
11/25/2014US8896125 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
11/25/2014US8896123 Nonvolatile memory devices having a three dimensional structure
11/25/2014US8896122 Semiconductor devices having gates including oxidized nickel
11/25/2014US8896112 Multi-chip module with self-populating positive features
11/25/2014US8896106 Semiconductor packages having multiple lead frames and methods of formation thereof
11/25/2014US8896104 Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit substrate, and electronic apparatus
11/25/2014US8896101 Nonplanar III-N transistors with compositionally graded semiconductor channels
11/25/2014US8896100 III nitride structure and method for manufacturing III nitride semiconductor fine columnar crystal
11/25/2014US8896099 Carbon material and method of manufacturing the same
11/25/2014US8896098 Power storage device and method for manufacturing the same
11/25/2014US8896093 Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter
11/25/2014US8896091 Apparatus and methods for reducing impact of high RF loss plating
11/25/2014US8896090 Electrical fuses and methods of making electrical fuses
11/25/2014US8896087 Shallow trench isolation area having buried capacitor
11/25/2014US8896084 Semiconductor device
11/25/2014US8896074 MEMS vibration isolation system and method
11/25/2014US8896072 Channel surface technique for fabrication of FinFET devices
11/25/2014US8896071 Reducing defects in electronic switching devices
11/25/2014US8896069 Semiconductor devices having tensile and/or compressive stress and methods of manufacturing
11/25/2014US8896068 Semiconductor device including source/drain regions and a gate electrode, and having contact portions
11/25/2014US8896067 Method of forming finFET of variable channel width
11/25/2014US8896066 Tin doped III-V material contacts
11/25/2014US8896065 Top gate thin film transistor with independent field control for off-current suppression
11/25/2014US8896064 Electrostatic discharge protection circuit
11/25/2014US8896063 FinFET devices containing merged epitaxial Fin-containing contact regions
11/25/2014US8896062 Semiconductor device and method for forming the same
11/25/2014US8896061 Field device and method of operating high voltage semiconductor device applied with the same
11/25/2014US8896060 Trench power MOSFET
11/25/2014US8896059 Semiconductor device including multi-layered gate, electronic device including the same, and method for forming the same
11/25/2014US8896058 Semiconductor device and method for producing same
11/25/2014US8896057 Semiconductor structure and method for manufacturing the same
11/25/2014US8896056 Surrounding gate transistor semiconductor device
11/25/2014US8896055 Accumulation type FinFET, circuits and fabrication method thereof
11/25/2014US8896054 Nonvolatile semiconductor memory device and method of manufacturing the same
11/25/2014US8896053 Semiconductor device and method of manufacturing the same
11/25/2014US8896052 Nonvolatile semiconductor memory device and method of manufacturing the same
11/25/2014US8896051 Semiconductor device and method for manufacturing the same
11/25/2014US8896050 Electronic device including a tunnel structure
11/25/2014US8896049 Semiconductor device and method for manufacturing the same
11/25/2014US8896048 Apparatus and method for source side implantation after spacer formation to reduce short channel effects in metal oxide semiconductor field effect transistors
11/25/2014US8896042 Semiconductor device comprising oxide semiconductor
11/25/2014US8896040 Magneto-resistive random access memory (MRAM) having a plurality of concentrically aligned magnetic tunnel junction layers and concentrically aligned upper electrodes over a lower electrode
11/25/2014US8896036 Solid-state imaging device, production method of the same, and imaging apparatus
11/25/2014US8896035 Field effect transistor having phase transition material incorporated into one or more components for reduced leakage current
11/25/2014US8896034 Radio frequency and microwave devices and methods of use
11/25/2014US8896033 Electrochemical transistor
11/25/2014US8896032 Self-aligned biosensors with enhanced sensitivity
11/25/2014US8896030 Integrated circuits with selective gate electrode recess
11/25/2014US8896028 Semiconductor device, manufacturing method thereof, protective element, and manufacturing method thereof
11/25/2014US8896027 Nitride semiconductor diode
11/25/2014US8896025 Method for fabricating semiconductor device
11/25/2014US8896024 Electrostatic discharge protection structure and electrostatic discharge protection circuit
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