Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2014
12/31/2014CN104253130A 半导体器件 Semiconductor devices
12/31/2014CN104253124A 高压静电保护结构 High-voltage electrostatic protection structure
12/31/2014CN104253079A 浅沟槽隔离结构、包含其的晶体管及其制作方法 Shallow trench isolation structure, including its transistor and manufacturing method thereof
12/31/2014CN104253051A 分裂栅存储器单元结构的方法及结构 Split-gate memory cell structure method and structure
12/31/2014CN104253046A 鳍式场效应晶体管及其形成方法 Fin field-effect transistor and method of forming
12/31/2014CN104253045A Vdmos器件及其制造方法 Vdmos device and manufacturing method thereof
12/31/2014CN104253044A 晶体管及其形成方法 Transistor and method of forming
12/31/2014CN104251758A 半导体压力传感器装置及其制造方法 The semiconductor pressure sensor device and manufacturing method thereof
12/31/2014CN103035568B 一种tft阵列基板及制作方法、显示装置 One kind tft array substrate and manufacturing method, a display device
12/31/2014CN102810568B 一种应变Si垂直沟道PMOS集成器件及制备方法 An integrated Si vertical channel PMOS devices and methods for preparing contingency
12/31/2014CN102803940B Tft阵列检查方法以及tft阵列检查装置 Tft array inspection methods and tft array inspection device
12/31/2014CN102800710B 一种半导体二极管封装结构 A semiconductor diode package structure
12/31/2014CN102789977B 直立式金属氧化物半导体整流二极管及其制作方法 Vertical metal oxide semiconductor rectifier diode and manufacturing method thereof
12/31/2014CN102737962B 外延结构体及其制备方法 Epitaxial structure and preparation method
12/31/2014CN102449771B 烷基硅烷层叠体及其制造方法、以及薄膜晶体管 Alkylsilane laminate and manufacturing method thereof, and a thin film transistor
12/31/2014CN102394247B 薄膜晶体管元件及显示面板的像素结构与驱动电路 A thin film transistor and a pixel structure of the display panel and the driving circuit
12/31/2014CN102136497B 集成的共源极功率mosfet器件及其制造方法 The integrated common source power mosfet device and manufacturing method thereof
12/31/2014CN101989619B 薄膜晶体管基底和用于薄膜晶体管基底的薄膜晶体管 A thin film transistor substrate and a thin film transistor for a thin film transistor substrate
12/30/2014US8923072 Non-volatile memory device and method of fabricating the same
12/30/2014US8923070 FinFET based one-time programmable device
12/30/2014US8923059 Semiconductor memory device and method of operating the same
12/30/2014US8923057 Three-dimensional semiconductor memory device with active patterns and electrodes arranged above a substrate
12/30/2014US8923053 Nonvolatile memory device, operating method thereof, and memory system including the same
12/30/2014US8923052 Semiconductor memory having volatile and multi-bit, non-volatile functionality and methods of operating
12/30/2014US8923048 3D non-volatile storage with transistor decoding structure
12/30/2014US8923038 Memory cells, semiconductor device structures, memory systems, and methods of fabrication
12/30/2014US8923029 Field programmable read-only memory device
12/30/2014US8922182 DC converter circuit and power supply circuit
12/30/2014US8922029 Apparatus having a wiring board and memory devices
12/30/2014US8922027 Electronic device having electrodes bonded with each other
12/30/2014US8922019 Semiconductor device having a copper plug
12/30/2014US8922016 Method for producing a composite material, associated composite material and associated semiconductor circuit arrangements
12/30/2014US8922012 Integrated circuit chip and flip chip package having the integrated circuit chip
12/30/2014US8922002 Packaged microelectronic devices and methods for manufacturing packaged microelectronic devices
12/30/2014US8921997 Electrical component and method of manufacturing the same
12/30/2014US8921987 Semiconductor device and measurement device having an oscillator
12/30/2014US8921984 Through silicon via in semiconductor device
12/30/2014US8921979 Method for producing a semiconductor layer
12/30/2014US8921977 Capacitor array and method of fabricating the same
12/30/2014US8921974 Semiconductor manufacturing and semiconductor device with semiconductor structure
12/30/2014US8921973 Semiconductor device
12/30/2014US8921972 High voltage metal-oxide-semiconductor transistor device
12/30/2014US8921969 Chip-scale Schottky device
12/30/2014US8921962 Planar multiferroic/magnetostrictive nanostructures as memory elements, two-stage logic gates and four-state logic elements for information processing
12/30/2014US8921961 Storage element for STT MRAM applications
12/30/2014US8921960 Memristor cell structures for high density arrays
12/30/2014US8921959 MRAM device and fabrication method thereof
12/30/2014US8921957 Method of improving MEMS microphone mechanical stability
12/30/2014US8921956 MEMS device having a back plate with elongated protrusions
12/30/2014US8921955 Semiconductor device with micro electromechanical system die
12/30/2014US8921954 Method of providing a semiconductor structure with forming a sacrificial structure
12/30/2014US8921953 Method for MEMS device fabrication and device formed
12/30/2014US8921952 Microelectromechanical system devices having crack resistant membrane structures and methods for the fabrication thereof
12/30/2014US8921951 MEMS device and manufacturing method thereof
12/30/2014US8921950 Semiconductor device
12/30/2014US8921949 MOS P-N junction diode with enhanced response speed and manufacturing method thereof
12/30/2014US8921948 Semiconductor device and manufacturing method thereof
12/30/2014US8921947 Multi-metal gate semiconductor device having triple diameter metal opening
12/30/2014US8921946 Integrated circuit resistor
12/30/2014US8921945 High-voltage power transistor using SOI technology
12/30/2014US8921944 Semiconductor device
12/30/2014US8921943 Methods and apparatus for ESD structures
12/30/2014US8921941 ESD protection device and method for fabricating the same
12/30/2014US8921940 Semiconductor device and a method for fabricating the same
12/30/2014US8921939 Stressed channel FET with source/drain buffers
12/30/2014US8921938 Laterally diffused metal oxide semiconductor (LDMOS) device with overlapping wells
12/30/2014US8921937 High voltage metal-oxide-semiconductor transistor device and method of fabricating the same
12/30/2014US8921936 Ultra high voltage MOS transistor device
12/30/2014US8921935 Semiconductor device
12/30/2014US8921934 FinFET with trench field plate
12/30/2014US8921933 Semiconductor structure and method for operating the same
12/30/2014US8921932 Semiconductor device
12/30/2014US8921931 Semiconductor device with trench structures including a recombination structure and a fill structure
12/30/2014US8921930 Semiconductor device with buried bit line and method for fabricating the same
12/30/2014US8921928 Semiconductor device with low on resistance
12/30/2014US8921927 Method of manufacturing vertical planar power MOSFET and method of manufacturing trench-gate power MOSFET
12/30/2014US8921926 Semiconductor device
12/30/2014US8921925 Semiconductor device, method of manufacturing the same, and power module
12/30/2014US8921924 Semiconductor memory device
12/30/2014US8921923 Method for manufacturing semiconductor memory device and semiconductor memory device
12/30/2014US8921922 Nonvolatile memory device and method for fabricating the same
12/30/2014US8921921 Nonvolatile memory device and method for fabricating the same
12/30/2014US8921920 Semiconductor device
12/30/2014US8921919 Semiconductor device and semiconductor device manufacturing method
12/30/2014US8921918 Three-dimensional semiconductor devices
12/30/2014US8921917 Split gate flash cell and method for making the same
12/30/2014US8921916 Single poly electrically erasable programmable read only memory (single poly EEPROM) device
12/30/2014US8921915 Nonvolatile memory device and method for fabricating the same
12/30/2014US8921914 Devices with nanocrystals and methods of formation
12/30/2014US8921912 Nonvolatile memory device and method for fabricating the same
12/30/2014US8921908 On-chip capacitors in combination with CMOS devices on extremely thin semiconductor on insulator (ETSOI) substrates
12/30/2014US8921906 Disposable pillars for contact formation
12/30/2014US8921904 Replacement gate fabrication methods
12/30/2014US8921903 Lateral junction field-effect transistor
12/30/2014US8921902 Semiconductor device and manufacturing method thereof
12/30/2014US8921901 Stacked CMOS image sensor and signal processor wafer structure
12/30/2014US8921899 Double gated 4F2 dram CHC cell and methods of fabricating the same
12/30/2014US8921897 Integrated circuit with gate electrode conductive structures having offset ends
12/30/2014US8921894 Field effect transistor, method for producing the same, and electronic device
12/30/2014US8921893 Circuit structure having islands between source and drain
1 ... 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 ... 2182