Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2014
11/18/2014US8890119 Vertical nanowire transistor with axially engineered semiconductor and gate metallization
11/18/2014US8890118 Tunnel field effect transistor
11/18/2014US8890117 Nanowire circuit architecture
11/18/2014US8890116 Vertical stacking of carbon nanotube arrays for current enhancement and control
11/18/2014US8890115 Stable and metastable nanowires displaying locally controllable properties
11/18/2014US8890113 Optoelectronic device with a wide bandgap and method of making same
11/18/2014US8890112 Controlling ferroelectricity in dielectric films by process induced uniaxial strain
11/18/2014US8890108 Memory device having vertical selection transistors with shared channel structure and method for making the same
11/18/2014US8890107 Semiconductor memory
11/18/2014US8890106 Hybrid circuit of nitride-based transistor and memristor
11/18/2014US8890105 Nonvolatile memory
11/18/2014US8890104 Resistive memory device and fabrication method thereof
11/18/2014US8890103 Semiconductor substrate suitable for the realisation of electronic and/or optoelectronic devices and relative manufacturing process
11/18/2014US8889557 Substrate treating method, temporary fixing composition and semiconductor device
11/18/2014US8889554 Semiconductor structure and method for manufacturing the same
11/18/2014US8889548 On-chip RF shields with backside redistribution lines
11/18/2014US8889541 Reduced short channel effect of III-V field effect transistor via oxidizing aluminum-rich underlayer
11/18/2014US8889540 Stress memorization in RMG FinFets
11/18/2014US8889539 Recess gate transistor
11/18/2014US8889538 Methods of forming diodes
11/18/2014US8889537 Implantless dopant segregation for silicide contacts
11/18/2014US8889535 Semiconductor device and method for fabricating semiconductor buried layer
11/18/2014US8889532 Method of making an insulated gate semiconductor device and structure
11/18/2014US8889531 Semiconductor device having two monocrystalline semiconductor regions with a different lattice constant and a strained semiconductor region between
11/18/2014US8889529 Heterojunction bipolar transistors with thin epitaxial contacts
11/18/2014US8889528 Method for manufacturing a semiconductor component
11/18/2014US8889524 Substrate treating method, stack and semiconductor device
11/18/2014US8889520 Bipolar junction transistors, memory arrays, and methods of forming bipolar junction transistors and memory arrays
11/18/2014US8889519 Semiconductor device and method for manufacturing the same
11/18/2014US8889518 LDMOS transistor with asymmetric spacer as gate
11/18/2014US8889515 Method for fabricating semiconductor device by changing work function of gate metal layer
11/18/2014US8889514 Trench MOSFET having a top side drain
11/18/2014US8889513 Trench MOSFET with trenched floating gates having thick trench bottom oxide as termination
11/18/2014US8889512 Method and device including transistor component having a field electrode
11/18/2014US8889511 Methods of manufacturing power semiconductor devices with trenched shielded split gate transistor
11/18/2014US8889510 Surrounding stacked gate multi-gate FET structure nonvolatile memory device
11/18/2014US8889509 Charge trapping devices with field distribution layer over tunneling barrier
11/18/2014US8889508 Precision resistor for non-planar semiconductor device architecture
11/18/2014US8889506 Structure and method for interconnect spatial frequency doubling using selective ridges
11/18/2014US8889504 Semiconductor devices having tensile and/or compressive stress and methods of manufacturing
11/18/2014US8889503 Method for manufacturing semiconductor device
11/18/2014US8889502 Finlike structures and methods of making same
11/18/2014US8889500 Methods of forming stressed fin channel structures for FinFET semiconductor devices
11/18/2014US8889499 Semiconductor device and manufacturing method thereof
11/18/2014US8889497 Semiconductor devices and methods of manufacture thereof
11/18/2014US8889496 Manufacturing method of semiconductor device
11/18/2014US8889495 Semiconductor alloy fin field effect transistor
11/18/2014US8889494 Finfet
11/18/2014US8889493 Manufacturing method of semiconductor device
11/18/2014US8889490 Memory device and manufacturing method thereof
11/18/2014US8889487 Three-dimensional high voltage gate driver integrated circuit
11/18/2014US8889485 Methods for surface attachment of flipped active componenets
11/18/2014US8889482 Methods to fabricate integrated circuits by assembling components
11/18/2014US8889480 Method of fabricating a thin-film device
11/18/2014US8889475 Self-aligned bottom-gated graphene devices
11/18/2014US8889463 Sloped structure, method for manufacturing sloped structure, and spectrum sensor
11/18/2014US8889452 Piezoelectric device and method for manufacturing piezoelectric device
11/18/2014US8889446 Polysilicon thin film transistor device and method of fabricating the same
11/18/2014US8889442 Flexible semiconductor device and method of manufacturing the same
11/18/2014US8889020 Process for improving critical dimension uniformity of integrated circuit arrays
11/18/2014US8887663 Method and apparatus for fabrication of carbon nanotubes using an electrostatically charged substrate and liner
11/13/2014US20140337603 Semiconductor device
11/13/2014US20140335800 Semiconductor device, antenna switch circuit, and radio communication apparatus
11/13/2014US20140335685 Methods of annealing after deposition of gate layers
11/13/2014US20140335682 Semiconductor device and manufacturing method thereof
11/13/2014US20140335674 Manufacturing method of semiconductor device
11/13/2014US20140335673 Methods of manufacturing finfet semiconductor devices using sacrificial gate patterns and selective oxidization of a fin
11/13/2014US20140335672 Process for manufacturing semiconductor transistor device
11/13/2014US20140335668 Contact landing pads for a semiconductor device and methods of making same
11/13/2014US20140335667 Semiconductor device
11/13/2014US20140335666 Growth of High-Performance III-Nitride Transistor Passivation Layer for GaN Electronics
11/13/2014US20140335665 Low extension resistance iii-v compound fin field effect transistor
11/13/2014US20140335663 Method of making a transitor
11/13/2014US20140335653 Transistor, liquid crystal display device, and manufacturing method thereof
11/13/2014US20140335652 Semiconductor device and method for manufacturing the same
11/13/2014US20140335412 Process for fabricating nanowire arrays
11/13/2014US20140334229 Semiconductor device with floating gate and electrically floating body
11/13/2014US20140334227 Memory circuit, method of driving the same, nonvolatile storage device using the same, and liquid crystal display device
11/13/2014US20140334212 Semiconductor Device and Power Converter
11/13/2014US20140332958 Method for Manufacturing Dummy Gate in Gate-Last Process and Dummy Gate in Gate-Last Process
11/13/2014US20140332934 Substrates for semiconductor devices
11/13/2014US20140332933 Semiconductor structure and method for forming the same
11/13/2014US20140332932 Shallow trench and fabrication method
11/13/2014US20140332931 Compensation Devices
11/13/2014US20140332929 Forming semiconductor chip connections
11/13/2014US20140332928 Digital Semiconductor Variable Capacitor
11/13/2014US20140332927 Self-aligned bipolar junction transistor having self-planarizing isolation raised base structures
11/13/2014US20140332921 Semiconductor devices having a trench isolation layer and methods of fabricating the same
11/13/2014US20140332920 Shallow trench isolation
11/13/2014US20140332919 Termination design for nanotube mosfet
11/13/2014US20140332915 Direct Graphene Growth on Metal Oxides by Molecular Epitaxy
11/13/2014US20140332907 Semiconductor device and method for manufacturing the same
11/13/2014US20140332906 High-voltage transistor device and production method
11/13/2014US20140332905 Method of fabricating semiconductor device
11/13/2014US20140332903 Integrated Circuit Having Raised Source Drains Devices with Reduced Silicide Contact Resistance and Methods to Fabricate Same
11/13/2014US20140332902 Novel method to tune narrow width effect with raised s/d structure
11/13/2014US20140332901 Semiconductor device with notched gate
11/13/2014US20140332900 Low extension resistance iii-v compound fin field effect transistor
11/13/2014US20140332897 Low Noise and High Performance LSI Device
11/13/2014US20140332895 Random number generation device
1 ... 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 ... 2182