Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2014
12/16/2014US8912603 Semiconductor device with stressed fin sections
12/16/2014US8912602 FinFETs and methods for forming the same
12/16/2014US8912601 Double diffused drain metal oxide semiconductor device and manufacturing method thereof
12/16/2014US8912600 Lateral double-diffused metal oxide semiconductor (LDMOS) transistors
12/16/2014US8912599 Semiconductor device and method of fabricating the same
12/16/2014US8912598 Stepped-source LDMOS architecture
12/16/2014US8912597 Semiconductor device including asymmetric lightly doped drain (LDD) region, related method and design structure
12/16/2014US8912596 Semiconductor device
12/16/2014US8912595 Trench MOS structure and method for forming the same
12/16/2014US8912594 Nonvolatile semiconductor memory device including silicon germanium semiconductor layer
12/16/2014US8912593 Method for manufacturing semiconductor device and semiconductor device
12/16/2014US8912592 Non-volatile memory device including etch stop layer pattern
12/16/2014US8912590 Semiconductor device including monos-type memory cell
12/16/2014US8912589 Methods and apparatuses including strings of memory cells formed along levels of semiconductor material
12/16/2014US8912588 Semiconductor memory device
12/16/2014US8912587 Scalable multi-functional and multi-level nano-crystal non-volatile memory device
12/16/2014US8912583 Top gate thin-film transistor, display device, and electronic apparatus
12/16/2014US8912581 3D transmission lines for semiconductors
12/16/2014US8912577 Distributed heating transistor devices providing reduced self-heating
12/16/2014US8912576 Structures and techniques for using semiconductor body to construct bipolar junction transistors
12/16/2014US8912575 Semiconductor memory device and method of fabricating the same
12/16/2014US8912574 Device isolation with improved thermal conductivity
12/16/2014US8912573 Semiconductor device containing HEMT and MISFET and method of forming the same
12/16/2014US8912572 High electron mobility transistor and method of manufacturing the same
12/16/2014US8912571 Compound semiconductor device including first film on compound semiconductor layer and second film on first film and method of manufacturing the same
12/16/2014US8912570 High electron mobility transistor and method of forming the same
12/16/2014US8912568 Semiconductor device and manufacturing method thereof
12/16/2014US8912567 Strained channel transistor and method of fabrication thereof
12/16/2014US8912566 Gate amplification triac
12/16/2014US8912559 Group III nitride semiconductor light-emitting device
12/16/2014US8912555 Semiconductor light-emitting device
12/16/2014US8912554 Long wavelength light emitting device with photoluminescence emission and high quantum efficiency
12/16/2014US8912552 Display substrate and method of manufacturing the same
12/16/2014US8912550 Dislocations in SiC semiconductor substrate
12/16/2014US8912547 Light-emitting device, display device, and semiconductor device
12/16/2014US8912546 Thin film transistor and display device
12/16/2014US8912545 Nanowires, nanowire fielde-effect transistors and fabrication method
12/16/2014US8912544 Light-emitting display device and method for manufacturing the same
12/16/2014US8912543 Display device
12/16/2014US8912542 TFT structure and LCD device
12/16/2014US8912541 Semiconductor device and method for manufacturing the same
12/16/2014US8912539 Array substrate and method of fabricating the same
12/16/2014US8912538 Thin film transistor array substrate and method for manufacturing the same
12/16/2014US8912537 Semiconductor device, RFID tag using the same and display device
12/16/2014US8912536 Transistors, methods of manufacturing the same and electronic devices including transistors
12/16/2014US8912532 Patterning the emission colour in top-emissive OLEDs
12/16/2014US8912531 Organic electroluminescent device
12/16/2014US8912530 Electrode structure including graphene and field effect transistor having the same
12/16/2014US8912529 Selective emitter photovoltaic device
12/16/2014US8912527 Multi-quantum well structure and light emitting diode having the same
12/16/2014US8912526 Electron multiplier device having a nanodiamond layer
12/16/2014US8912525 Chemical oxidation of graphene and carbon nanotubes using Cerium (IV) ammonium nitrate
12/16/2014US8912523 Conductive path in switching material in a resistive random access memory device and control
12/16/2014US8912522 Nanodevice arrays for electrical energy storage, capture and management and method for their formation
12/16/2014US8912521 Non-volatile semiconductor memory device
12/16/2014US8912520 Nanoscale switching device
12/16/2014US8912519 Variable resistive memory device and method of fabricating the same
12/16/2014US8912518 Resistive random access memory cells having doped current limiting layers
12/16/2014US8912517 Resistive switching memory
12/16/2014US8912516 Memory element with ion source layer and memory device
12/16/2014US8912099 Method of manufacturing semiconductor device
12/16/2014US8912098 Self-aligned carbon electronics with embedded gate electrode
12/16/2014US8912093 Die seal layout for VFTL dual damascene in a semiconductor device
12/16/2014US8912091 Backside metal ground plane with improved metal adhesion and design structures
12/16/2014US8912089 Method for manufacturing a semiconductor device including a stacked body comprising pluralities of first and second metallic conductive layers
12/16/2014US8912085 Method and apparatus for adjusting threshold voltage in a replacement metal gate integration
12/16/2014US8912084 Semiconductor device
12/16/2014US8912081 Stiffening layers for the relaxation of strained layers
12/16/2014US8912080 Manufacturing method of the semiconductor device
12/16/2014US8912069 Semiconductor device with STI and method for manufacturing the semiconductor device
12/16/2014US8912068 Semiconductor device with strained channel and method of fabricating the same
12/16/2014US8912067 Method for manufacturing MOS transistors with different types of gate stacks
12/16/2014US8912066 Lateral double-diffused high voltage device
12/16/2014US8912064 Method for forming impurity region of vertical transistor and method for fabricating vertical transistor using the same
12/16/2014US8912063 Semiconductor device having blocking pattern and method for fabricating the same
12/16/2014US8912062 Semiconductor storage device and method of manufacturing same
12/16/2014US8912060 Method for manufacturing semiconductor device and apparatus for manufacturing same
12/16/2014US8912059 Middle of-line borderless contact structure and method of forming
12/16/2014US8912058 Method of forming a thin film transistor using a gray-scale photoresist
12/16/2014US8912057 Fabrication of nickel free silicide for semiconductor contact metallization
12/16/2014US8912055 Method for manufacturing a hybrid MOSFET device and hybrid MOSFET obtainable thereby
12/16/2014US8912054 Thin-film semiconductor device and method of manufacturing the same
12/16/2014US8912040 Method for manufacturing semiconductor device
12/16/2014US8912027 Display device and method of manufacturing the same
12/16/2014US8912013 Magnetic tunnel junction device and fabrication
12/16/2014US8911883 Photosensitive semiconductor nanocrystals, photosensitive composition comprising semiconductor nanocrystals and method for forming semiconductor nanocrystal pattern using the same
12/11/2014US20140364320 Chemical Sensor Array Having Multiple Sensors Per Well
12/11/2014US20140363982 Semiconductor device and method of manufacturing the semiconductor device
12/11/2014US20140363962 Method of forming a semiconductor device
12/11/2014US20140363959 Silicon carbide schottky-barrier diode device and method for manufacturing the same
12/11/2014US20140363953 Method for forming components on a silicon-germanium layer
12/11/2014US20140363946 Low capacitance transient voltage suppressor (tvs) with reduced clamping voltage
12/11/2014US20140363945 Methods for fabricating improved bipolar transistors
12/11/2014US20140363944 Aqua Regia and Hydrogen Peroxide HCl Combination to Remove Ni and NiPt Residues
12/11/2014US20140363943 Contact Structure of Semiconductor Device Priority Claim
12/11/2014US20140363942 Method for forming a low resistivity tungsten silicide layer for metal gate stack applications
12/11/2014US20140363941 Replacement gate electrode with a self-aligned dielectric spacer
12/11/2014US20140363940 Method of Manufacturing a Semiconductor Device
12/11/2014US20140363939 Method of forming a semiconductor device
12/11/2014US20140363938 Electric power semiconductor device and manufacturing method of the same
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