Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2014
12/09/2014US8907334 Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor
12/09/2014US8907333 Pyrogenic zinc oxide-comprising composite of layers and field-effect transistor comprising this composite
12/09/2014US8907330 Organic light emitting diode display and manufacturing method thereof
12/09/2014US8907329 Organic el panel, display device using same, and method for producing organic el panel
12/09/2014US8907326 Organic light-emitting display device and thin film deposition apparatus for manufacturing the same
12/09/2014US8907325 Thin film transistor having highly dielectric organic layer
12/09/2014US8907321 Nitride based quantum well light-emitting devices having improved current injection efficiency
12/09/2014US8907318 Resistance change memory
12/09/2014US8907317 Silicon based nanoscale crossbar memory
12/09/2014US8907316 Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regions
12/09/2014US8907315 Memory cells and methods of forming memory cells
12/09/2014US8907314 MoOx-based resistance switching materials
12/09/2014US8907313 Controlling ReRam forming voltage with doping
12/09/2014US8907210 Semiconductor material and its application as an absorber material for solar cells
12/09/2014US8907133 Electrolyte compositions and electrochemical double layer capacitors formed there from
12/09/2014US8906811 Shallow pn junction formed by in situ doping during selective growth of an embedded semiconductor alloy by a cyclic growth/etch deposition process
12/09/2014US8906808 Etching method
12/09/2014US8906805 Methods of fabricating semiconductor devices
12/09/2014US8906804 Composition including material, methods of depositing material, articles including same and systems for depositing materials
12/09/2014US8906796 Method of producing semiconductor transistor
12/09/2014US8906789 Asymmetric cyclic desposition etch epitaxy
12/09/2014US8906788 Method for making epitaxial structure
12/09/2014US8906785 Method of epitaxially growing silicon by atomic layer deposition for TFT flash memory cell
12/09/2014US8906782 Method of separating semiconductor die using material modification
12/09/2014US8906776 Method for forming integrated circuits on a strained semiconductor substrate
12/09/2014US8906775 Semiconductor device and method for fabricating the same
12/09/2014US8906771 Semiconductor processing methods, and methods of forming isolation structures
12/09/2014US8906770 Semiconductor structure that reduces the effects of gate cross diffusion and method of forming the structure
12/09/2014US8906769 Method of manufacturing a semiconductor device that includes a misfet
12/09/2014US8906768 Wrap around stressor formation
12/09/2014US8906767 Semiconductor device with self-aligned interconnects
12/09/2014US8906766 Method for manufacturing semiconductor device with first and second gates over buried bit line
12/09/2014US8906765 Method of making a non-volatile double gate memory cell
12/09/2014US8906761 Method of manufacturing for semiconductor device using expandable material
12/09/2014US8906759 Silicon nitride gate encapsulation by implantation
12/09/2014US8906758 Regrown heterojunction bipolar transistors for multi-function integrated devices and method for fabricating the same
12/09/2014US8906756 Method for manufacturing semiconductor device
12/09/2014US8906754 Methods of forming a semiconductor device with a protected gate cap layer and the resulting device
12/09/2014US8906753 Semiconductor structure and method for manufacturing the same
12/09/2014US8906751 Silicon controlled rectifiers (SCR), methods of manufacture and design structures
12/09/2014US8906739 Thin film transistor substrate and method for manufacturing same
12/09/2014US8906738 Oxide semiconductor thin film transistor with an aluminum oxide protective film made using a continuous deposition process of aluminum oxide laminated with an aluminum film
12/09/2014US8906736 Multifunctional electrode
12/09/2014US8906729 Method of manufacturing a device with a cavity
12/09/2014US8906723 Donor substrate, method for fabricating the donor substrate, and method for forming transfer pattern using the donor substrate
12/09/2014US8906719 Thin film transistor and display device using the same and method for manufacturing the same
12/09/2014US8906490 Multicolor mask
12/09/2014US8906459 Method of forming organic layer and method of manufacturing organic light emitting device having the same
12/09/2014US8906158 Method for producing compound semiconductor epitaxial substrate having PN junction
12/04/2014US20140357974 Nano-pillar transistor fabrication and use
12/04/2014US20140357061 Semiconductor device and method for fabricating the same
12/04/2014US20140357059 Schottky rectifier
12/04/2014US20140357049 Semiconductor Structures and Methods with High Mobility and High Energy Bandgap Materials
12/04/2014US20140357048 Method for Producing a Semiconductor Component
12/04/2014US20140357043 Lateral bipolar transistors having partially-depleted intrinsic base
12/04/2014US20140357042 Spacer stress relaxation
12/04/2014US20140357041 Method of forming strained source and drain regions in a p-type finfet structure
12/04/2014US20140357040 Method of making a semiconductor device using spacers for source/drain confinement
12/04/2014US20140357039 Method for the formation of a protective dual liner for a shallow trench isolation structure
12/04/2014US20140357038 Through silicon via processing method for lateral double-diffused mosfets
12/04/2014US20140357037 Finfet with enhanced embedded stressor
12/04/2014US20140357036 Method of making a semiconductor device including an all around gate
12/04/2014US20140357035 Semiconductor device and method of manufacturing the same
12/04/2014US20140357033 Method for fabricating a metal high-k gate stack for a buried recessed access device
12/04/2014US20140357030 Fabrication of mos device with schottky barrier controlling layer
12/04/2014US20140357027 Method for manufacturing semiconductor device
12/04/2014US20140357026 Production method for semiconductor device
12/04/2014US20140357018 Method for manufacturing semiconductor device
12/04/2014US20140357017 Method for fabricating thin-film transistor
12/04/2014US20140354933 Display panel and display apparatus
12/04/2014US20140354347 Bipolar transistor, band-gap reference circuit and virtual ground reference circuit
12/04/2014US20140353832 Semiconductor device and manufacturing method thereof
12/04/2014US20140353806 Bypass diode
12/04/2014US20140353804 Method for Producing Group III Nitride Semiconductor and Group III Nitride Semiconductor
12/04/2014US20140353802 Methods for integration of pore stuffing material
12/04/2014US20140353801 Device isolation in finfet cmos
12/04/2014US20140353799 Esd transistor
12/04/2014US20140353795 Integrated circuits including finfet devices with shallow trench isolation that includes a thermal oxide layer and methods for making the same
12/04/2014US20140353794 Semiconductor arrangement and method of forming
12/04/2014US20140353793 Guarding ring structure of a high voltage device and manufacturing method thereof
12/04/2014US20140353778 Capacitive pressure sensing semiconductor device
12/04/2014US20140353774 Methods for stiction reduction in mems sensors
12/04/2014US20140353771 Semiconductor Dielectric Interface and Gate Stack
12/04/2014US20140353770 Semiconductor device and method for fabricating the same
12/04/2014US20140353769 Semiconductor devices including protruding insulation portions between active fins
12/04/2014US20140353756 Semiconductor device and method of manufacturing the same
12/04/2014US20140353755 Field effect transistor structure and method of forming same
12/04/2014US20140353754 Self-aligned bottom-gated graphene devices
12/04/2014US20140353753 Fin field effect transistor device with reduced overlap capacitance and enhanced mechanical stability
12/04/2014US20140353752 Multi-height finfets with coplanar topography background
12/04/2014US20140353750 Self-aligned bottom-gated graphene devices
12/04/2014US20140353749 Semiconductor power device and method of fabricating the same
12/04/2014US20140353748 Field effect transistor, termination structure and associated method for manufacturing
12/04/2014US20140353747 Trench gate mosfet and method of forming the same
12/04/2014US20140353746 Semiconductor device and method for manufacturing semiconductor device
12/04/2014US20140353745 Semiconductor device having vertical channel
12/04/2014US20140353744 Semiconductor device
12/04/2014US20140353743 Semiconductor device and method for fabricating the same
12/04/2014US20140353741 Bottled epitaxy in source and drain regions of fets
12/04/2014US20140353740 Semiconductor device and manufacturing method thereof
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