Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2014
12/30/2014US8921892 High-performance nitride semiconductor devices
12/30/2014US8921889 Semiconductor device
12/30/2014US8921888 Method of making semiconductor device
12/30/2014US8921875 Recipient luminophoric mediums having narrow spectrum luminescent materials and related semiconductor light emitting devices and methods
12/30/2014US8921872 Display unit and method of manufacturing the same, electronic apparatus, illumination unit, and light-emitting device and method of manufacturing the same
12/30/2014US8921870 Light emitting device
12/30/2014US8921867 Thin-film transistor, display panel, and method for producing a thin-film transistor
12/30/2014US8921863 Thin film transistor having oxide semiconductor layer as ohmic contact layer
12/30/2014US8921861 Flat panel display device with oxide thin film transistors and method for fabricating the same
12/30/2014US8921860 Organic light emitting display device
12/30/2014US8921859 Array substrate for electrophoresis type display device and method of manufacturing the same, method of repairing a line of the same
12/30/2014US8921858 Light-emitting device
12/30/2014US8921857 Semiconductor device
12/30/2014US8921856 TFT-Pin array substrate and assembly structure for flat-panel X-ray detector
12/30/2014US8921855 Test circuit for testing signal receiving unit, image pickup apparatus, method of testing signal receiving unit, and method of testing image pickup apparatus
12/30/2014US8921853 Thin film transistor having oxide semiconductor layer
12/30/2014US8921852 Thin film transistor array panel and method of manufacturing the same
12/30/2014US8921851 Non-polar plane of wurtzite structure material
12/30/2014US8921850 Oxide thin film transistor, method for fabricating TFT, array substrate for display device and method for fabricating the same
12/30/2014US8921849 Insulated-gate field-effect transistor
12/30/2014US8921848 Organic light emitting diode display device
12/30/2014US8921847 Complexation of low-molecular semiconductors for the application as an emitter complex in organic light-emitting electrochemical cells (OLEECs)
12/30/2014US8921843 Organic light emitting device
12/30/2014US8921842 Organic light emitting display device and method of manufacturing the same
12/30/2014US8921840 Organic light emitting diode display
12/30/2014US8921835 Organic light emitting diode display
12/30/2014US8921830 Forming a non-planar transistor having a quantum well channel
12/30/2014US8921829 Light receiving element, light receiving element array, hybrid-type detecting device, optical sensor device, and method for producing light receiving element array
12/30/2014US8921828 Light emitting diode with multiple quantum well structure
12/30/2014US8921825 Nanowire field effect transistor device
12/30/2014US8921824 3-dimensional graphene structure and process for preparing and transferring the same
12/30/2014US8921822 Phase-change random access memory device and method of manufacturing the same
12/30/2014US8921821 Memory cells
12/30/2014US8921820 Phase change memory cell with large electrode contact area
12/30/2014US8921816 Semiconductor device having a diode
12/30/2014US8921231 Group III nitride wafer and its production method
12/30/2014US8921219 Process for fabricating a transistor comprising nanocrystals
12/30/2014US8921218 Metal gate finFET device and method of fabricating thereof
12/30/2014US8921213 Method of making less electric current dependence of electric current gain of semiconductor device
12/30/2014US8921211 Vertical-conduction integrated electronic device and method for manufacturing thereof
12/30/2014US8921198 Method and structure for forming a deep trench capacitor
12/30/2014US8921195 Isolation scheme for bipolar transistors in BiCMOS technology
12/30/2014US8921194 PNP bipolar junction transistor fabrication using selective epitaxy
12/30/2014US8921192 Semiconductor devices and methods of fabricating the same
12/30/2014US8921191 Integrated circuits including FINFET devices with lower contact resistance and reduced parasitic capacitance and methods for fabricating the same
12/30/2014US8921190 Field effect transistor and method of manufacture
12/30/2014US8921186 Semiconductor device and method of forming high voltage SOI lateral double diffused MOSFET with shallow trench insulator
12/30/2014US8921184 Method of making an electrode contact structure and structure therefor
12/30/2014US8921181 Flourine-stabilized interface
12/30/2014US8921178 Semiconductor devices with self-aligned source drain contacts and methods for making the same
12/30/2014US8921174 Method for fabricating complementary tunneling field effect transistor based on standard CMOS IC process
12/30/2014US8921172 Junction field effect transistor structure with P-type silicon germanium or silicon germanium carbide gate(s) and method of forming the structure
12/30/2014US8921169 Semiconductor device and fabrication method thereof
12/30/2014US8921168 Thin integrated circuit chip-on-board assembly and method of making
12/30/2014US8921156 Non-volatile resistive-switching memories
12/30/2014US8921154 Method of forming anneal-resistant embedded resistor for non-volatile memory application
12/30/2014US8921145 Hybrid MEMS bump design to prevent in-process and in-use stiction
12/30/2014US8921136 Self aligned contact formation
12/30/2014US8920679 Fluorinated silylethynyl pentacene compounds and compositions and methods of making and using the same
12/25/2014US20140379276 Method for calculating nitrogen concentration in silicon single crystal and method for calculating resistivity shift amount
12/25/2014US20140377944 FinFETs with Multiple Threshold Voltages
12/25/2014US20140377940 Transient voltage suppressor circuit, and diode device therefor and manufacturing method thereof
12/25/2014US20140377938 Method for producing semiconductor device
12/25/2014US20140377935 Selective Amorphization for Signal Isolation and Linearity
12/25/2014US20140377927 Self-aligned contact structure for replacement metal gate
12/25/2014US20140377926 Method for fabricating semiconductor device
12/25/2014US20140377925 Selective laser anneal on semiconductor material
12/25/2014US20140377924 Strained finfet with an electrically isolated channel
12/25/2014US20140377923 Method to form finfet/trigate devices on bulk semiconductor wafers
12/25/2014US20140377922 Non-Planar Transistors with Replacement Fins and Methods of Forming the Same
12/25/2014US20140377921 Manufacturing method of semiconductor device
12/25/2014US20140377918 Overlapped iii-v finfet with doped semiconductor extensions
12/25/2014US20140377917 Semiconductor device including source/drain formed on bulk and gate channel formed on oxide layer
12/25/2014US20140377907 Semiconductor device and method for manufacturing the same
12/25/2014US20140377906 Methods for manufacturing thin film transistors
12/25/2014US20140377904 Precursor composition of oxide semiconductor and thin film transistor substrate including oxide semiconductor
12/25/2014US20140377893 Semiconductor device and manufacturing method thereof
12/25/2014US20140377507 Composite Substrate Used For GaN Growth
12/25/2014US20140376595 Thermoresistance sensor structure for integrated circuits and method of making
12/25/2014US20140376291 Systems, circuits, devices, and methods with bidirectional bipolar transistors
12/25/2014US20140376156 Graphene mounted on aerogel
12/25/2014US20140375937 Display device and manufacturing method thereof
12/25/2014US20140375920 Display device and method of manufacturing the same
12/25/2014US20140375743 Light-emitting element, image forming apparatus, image display apparatus and image reading apparatus
12/25/2014US20140375377 Thyristor, a method of triggering a thyristor, and thyristor circuits
12/25/2014US20140375370 Methods and apparatus for an isfet
12/25/2014US20140375287 Systems, circuits, devices, and methods with bidirectional bipolar transistors
12/25/2014US20140374910 Semiconductor device and manufacturing method thereof
12/25/2014US20140374887 Composition for forming passivation film, including resin having carbon-carbon multiple bond
12/25/2014US20140374885 Narrow gap device with parallel releasing structure
12/25/2014US20140374882 Semiconductor Device with Recombination Centers and Method of Manufacturing
12/25/2014US20140374872 Controlled Buckling Structures in Semiconductor Interconnects and Nanomembranes for Stretchable Electronics
12/25/2014US20140374871 Semiconductor device and method for manufacturing the same
12/25/2014US20140374861 Epitaxial wafer and manufacturing method thereof
12/25/2014US20140374845 Semiconductor device
12/25/2014US20140374844 Method for forming metal semiconductor alloys in contact holes and trenches
12/25/2014US20140374843 Replacement metal gate transistor
12/25/2014US20140374842 Semiconductor Device with Self-Charging Field Electrodes
12/25/2014US20140374841 Field effect transistor with fin structure
12/25/2014US20140374839 Semiconductor device including source/drain formed on bulk and gate channel formed on oxide layer
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