Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2014
11/25/2014US8896022 Method of manufacturing compound semiconductor device
11/25/2014US8896021 Integrated circuit device
11/25/2014US8896020 Method and apparatus for producing large, single-crystals of aluminum nitride
11/25/2014US8896012 Light emitting diode
11/25/2014US8896010 Wafer-level flip chip device packages and related methods
11/25/2014US8896001 Nitride semiconductor light emitting device
11/25/2014US8896000 Light-emitting element package and display device
11/25/2014US8895998 Ceramic-based light emitting diode (LED) devices, components and methods
11/25/2014US8895997 Carbon nanotube light emitting device, light source, and photo coupler
11/25/2014US8895994 Electronic device including silicon carbide diode dies
11/25/2014US8895993 Low gate-leakage structure and method for gallium nitride enhancement mode transistor
11/25/2014US8895992 High electron mobility transistor and method of forming the same
11/25/2014US8895988 Electrostatic discharge device and organic electro-luminescence display device having the same
11/25/2014US8895987 Array substrate for fringe field switching mode liquid crystal display device and method of fabricating the same
11/25/2014US8895986 TFT flat sensor and manufacturing method therefor
11/25/2014US8895985 Array substrate for liquid crystal display and method for manufacturing the same
11/25/2014US8895983 Light emitting device, driving method of light emitting device and electronic device
11/25/2014US8895980 Tunneling current amplification transistor
11/25/2014US8895979 Vertical thin-film transistor structure of display panel and method of fabricating the same
11/25/2014US8895978 Semiconductor device
11/25/2014US8895977 Thin film transistor and method of forming the same
11/25/2014US8895976 Transistor and semiconductor device
11/25/2014US8895975 Photoelectric element
11/25/2014US8895974 Organic el display device and method for manufacturing the same
11/25/2014US8895967 Organic electroluminescent display device
11/25/2014US8895964 Organic EL element and production method thereof
11/25/2014US8895960 Electrode covering material, electrode structure and semiconductor device
11/25/2014US8895959 Superlattice structure and method for making the same
11/25/2014US8895958 Light emitting element and method for manufacturing same
11/25/2014US8895955 Display apparatus using oxide diode
11/25/2014US8895954 Light emitting diode package
11/25/2014US8895950 Methods for passivating a carbonic nanolayer
11/25/2014US8895949 Nonvolatile memory device using a varistor as a current limiter element
11/25/2014US8895948 Memory device
11/25/2014US8895450 Low resistivity tungsten PVD with enhanced ionization and RF power coupling
11/25/2014US8895442 Cobalt titanium oxide dielectric films
11/25/2014US8895437 Method for forming staircase word lines in a 3D non-volatile memory having vertical bit lines
11/25/2014US8895435 Polysilicon layer and method of forming the same
11/25/2014US8895426 Metal gate transistor, integrated circuits, systems, and fabrication methods thereof
11/25/2014US8895424 Process for forming schottky rectifier with PtNi silicide schottky barrier
11/25/2014US8895423 Method for making semiconductor diodes with low reverse bias currents
11/25/2014US8895422 Production of an integrated circuit including electrical contact on SiC
11/25/2014US8895421 III-N device structures and methods
11/25/2014US8895420 Method of fabricating a device with a concentration gradient and the corresponding device
11/25/2014US8895418 Semiconductor device and method for producing a semiconductor device
11/25/2014US8895412 Nano-structure manufacturing method using sacrificial etching mask
11/25/2014US8895410 Method of manufacturing semiconductor device and semiconductor manufacturing apparatus
11/25/2014US8895407 Manufacturing method of SOI substrate and manufacturing method of semiconductor device
11/25/2014US8895406 Release strategies for making transferable semiconductor structures, devices and device components
11/25/2014US8895399 Integrated circuit and method of forming sealed trench junction termination
11/25/2014US8895398 Method for manufacturing double-gate structures
11/25/2014US8895395 Reduced resistance SiGe FinFET devices and method of forming same
11/25/2014US8895394 Trench FET with source recess etch
11/25/2014US8895393 Memory devices including vertical pillars and methods of manufacturing and operating the same
11/25/2014US8895391 Method of manufacturing semiconductor memory device
11/25/2014US8895390 Memory device with a textured lowered electrode
11/25/2014US8895389 Semiconductor structures and fabrication method thereof
11/25/2014US8895388 Method of manufacturing a semiconductor device and a non-volatile semiconductor storage device including the formation of an insulating layer using a plasma treatment
11/25/2014US8895387 Method of manufacturing nonvolatile semiconductor memory device
11/25/2014US8895383 Multiple-gate semiconductor device and method
11/25/2014US8895381 Method of co-integration of strained-Si and relaxed Si or strained SiGe FETs on insulator with planar and non-planar architectures
11/25/2014US8895378 Compound semiconductor device and method of manufacturing the same
11/25/2014US8895377 Method for manufacturing semiconductor device
11/25/2014US8895376 Thin film transistor, method for manufacturing same, display device, and method for manufacturing same
11/25/2014US8895375 Field effect transistor and method for manufacturing the same
11/25/2014US8895374 Semiconductor field-effect transistor structure and method for manufacturing the same
11/25/2014US8895373 Method for manufacturing flexible semiconductor device having gate electrode disposed within an opening of a resin film
11/25/2014US8895372 Graphene based three-dimensional integrated circuit device
11/25/2014US8895371 Transistor employing vertically stacked self-aligned carbon nanotubes
11/25/2014US8895370 Vertical conduction power electronic device and corresponding realization method
11/25/2014US8895369 Methods for manufacturing superjunction semiconductor device having a dielectric termination
11/25/2014US8895366 Fabrication method of semiconductor package
11/25/2014US8895364 Structured wafer for device processing
11/25/2014US8895359 Semiconductor device, flip-chip mounting method and flip-chip mounting apparatus
11/25/2014US8895358 Semiconductor device and method of forming cavity in PCB containing encapsulant or dummy die having CTE similar to CTE of large array WLCSP
11/25/2014US8895352 Method to improve nucleation of materials on graphene and carbon nanotubes
11/25/2014US8895340 Biosensor and system and process for forming
11/25/2014US8895334 Thin film transistor array substrate and method for manufacturing the same and electronic device
11/25/2014US8895323 Method of forming a magnetoresistive random-access memory device
11/25/2014US8895161 Ferromagnetic graphenes and spin valve devices including the same
11/25/2014US8895116 Manufacturing method of crystalline semiconductor film and manufacturing method of semiconductor device
11/25/2014US8895072 Quantum dot barcode structures and uses thereof
11/25/2014US8894876 Etchant for electrode and method of fabricating thin film transistor array panel using the same
11/20/2014US20140342683 Wireless communication system
11/20/2014US20140342543 Method and apparatus for single step selective nitridation
11/20/2014US20140342542 Structure and metohds of improving reliability of non-volatile memory devices
11/20/2014US20140342541 Dummy Structure for Multiple Gate Dielectric Interface and Methods
11/20/2014US20140342540 Semiconductor device and method of manufacturing the same
11/20/2014US20140342537 Mechanisms for forming ultra shallow junction
11/20/2014US20140342524 Integrated circuit comprising an isolating trench and corresponding method
11/20/2014US20140342523 Relaxed Silicon Germanium Platform for High Speed CMOS Electronics and High Speed Analog Circuits
11/20/2014US20140342522 Reducing Variation by Using Combination Epitaxy Growth
11/20/2014US20140342521 Transistor performance using a two-step damage anneal
11/20/2014US20140342520 Vertical Power MOSFET and Methods for Forming the Same
11/20/2014US20140342518 Power mosfet structure and method
11/20/2014US20140342517 Method for fabricating trench type power semiconductor device
11/20/2014US20140342515 Esd protection using diode-isolated gate-grounded nmos with diode string
11/20/2014US20140342513 Semiconductor apparatus and method for manufacturing the semiconductor apparatus
11/20/2014US20140342512 High voltage iii-nitride semiconductor devices
11/20/2014US20140342511 Semiconductor structure and method for forming the same
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