Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2014
12/24/2014CN101728383B 逻辑电路 Logic
12/23/2014US8917549 NOR flash memory array structure, mixed nonvolatile flash memory and memory system comprising the same
12/23/2014US8917370 Liquid crystal panel, liquid crystal display device, and manufacturing method thereof
12/23/2014US8917117 Composite semiconductor device reducing malfunctions of power semiconductor element switching operation
12/23/2014US8917016 Display device and electronic apparatus
12/23/2014US8916979 Through-vias and methods of forming the same
12/23/2014US8916962 III-nitride transistor with source-connected heat spreading plate
12/23/2014US8916955 Nearly buffer zone free layout methodology
12/23/2014US8916954 Multi-layer metal support
12/23/2014US8916953 Method for manufacturing silicon single crystal wafer and annealed wafer
12/23/2014US8916952 Self-aligned emitter-base in advanced BiCMOS technology
12/23/2014US8916951 Lateral PNP bipolar transistor formed with multiple epitaxial layers
12/23/2014US8916948 Pyroelectric detector, pyroelectric detection device, and electronic instrument
12/23/2014US8916943 MEMS devices having a plurality of cavities
12/23/2014US8916942 Microelectromechanical resonator and a method for producing the same
12/23/2014US8916941 Semiconductor device having silicide on gate sidewalls in isolation regions
12/23/2014US8916940 Method of forming a nanocluster-comprising dielectric layer and device comprising such a layer
12/23/2014US8916939 Reliable contacts
12/23/2014US8916937 Multiple transistor types formed in a common epitaxial layer by differential out-diffusion from a doped underlayer
12/23/2014US8916936 Transistor structure of a semiconductor device
12/23/2014US8916935 ESD clamp in integrated circuits
12/23/2014US8916933 Semiconductor devices having tensile and/or compressive strain and methods of manufacturing and design structure
12/23/2014US8916932 Semiconductor device including FINFET structures with varied epitaxial regions, related method and design structure
12/23/2014US8916931 LDMOS semiconductor device with parasitic bipolar transistor for reduced surge current
12/23/2014US8916930 Trenched power semiconductor device and fabrication method thereof
12/23/2014US8916929 MOSFET having a JFET embedded as a body diode
12/23/2014US8916928 Threshold voltage adjustment in a fin transistor by corner implantation
12/23/2014US8916927 Vertical tunnel field effect transistor (FET)
12/23/2014US8916926 Nonvolatile memory device and method of making the same
12/23/2014US8916925 Vertical semiconductor device and method of manufacturing the same
12/23/2014US8916924 Method for manufacturing semiconductor device using thin hard mask and structure manufactured by the same
12/23/2014US8916923 Nonvolatile semiconductor memory
12/23/2014US8916922 Vertical memory devices and methods of manufacturing the same
12/23/2014US8916921 Non-volatile semiconductor storage device including a dielectric with low permittivity in memory cells arranged in a three dimensional manner
12/23/2014US8916920 Memory structure with planar upper surface
12/23/2014US8916919 Interdigitated vertical native capacitor
12/23/2014US8916915 Thin film transistor substrate and method for manufacturing the same and organic light emitting device using the same
12/23/2014US8916914 Field effect transistor having double transition metal dichalcogenide channels
12/23/2014US8916913 High voltage semiconductor device and the associated method of manufacturing
12/23/2014US8916912 Semiconductor device comprising a transistor gate having multiple vertically oriented sidewalls
12/23/2014US8916909 Semiconductor device and method for fabricating a semiconductor device
12/23/2014US8916908 III-nitride heterojunction device
12/23/2014US8916906 Boron-containing buffer layer for growing gallium nitride on silicon
12/23/2014US8916892 Light-scattering substrate, method of manufacturing the same, organic light-emitting display device including the same, and method of manufacturing the organic light-emitting display device
12/23/2014US8916881 Semiconductor device and method for manufacturing semiconductor device
12/23/2014US8916880 Silicon carbide epitaxial wafer and semiconductor device
12/23/2014US8916878 Thin film transistor and organic light-emitting display apparatus
12/23/2014US8916877 Thin film transistor, fabrication method thereof, and organic light emitting diode display having the same
12/23/2014US8916876 White organic light emitting diode display device and method of fabricating the same
12/23/2014US8916872 Method of forming a stacked low temperature diode and related devices
12/23/2014US8916871 Bondable top metal contacts for gallium nitride power devices
12/23/2014US8916870 Semiconductor device and method for manufacturing the same
12/23/2014US8916869 Semiconductor device including an oxide semiconductor layer
12/23/2014US8916868 Semiconductor device and method for manufacturing semiconductor device
12/23/2014US8916867 Oxide semiconductor element and semiconductor device
12/23/2014US8916866 Semiconductor device
12/23/2014US8916865 Semiconductor device
12/23/2014US8916861 Organic electroluminescence device, display unit including the same, and method of manufacturing an organic electroluminescence device
12/23/2014US8916860 Organic light-emitting device comprising first electron transport layer comprising DMBI derivative
12/23/2014US8916856 Display apparatus
12/23/2014US8916855 Organic light-emitting display apparatus and method of manufacturing the same
12/23/2014US8916851 Graphene-based device and methods of forming the same
12/23/2014US8916850 Light-emitting element and method for manufacturing same
12/23/2014US8916849 Optoelectronic semiconductor chip
12/23/2014US8916846 Nonvolatile memory device
12/23/2014US8916478 Method for manufacturing semiconductor device and semiconductor device
12/23/2014US8916476 Microfine structure formation method and microfine structure formed body
12/23/2014US8916471 Method for forming semiconductor structure having through silicon via for signal and shielding structure
12/23/2014US8916470 Method of manufacturing sidewall spacers on a memory device
12/23/2014US8916469 Method of fabricating copper damascene
12/23/2014US8916460 Semiconductor device and method for fabricating the same
12/23/2014US8916459 Compound semiconductor device with mesa structure
12/23/2014US8916456 Group III-V substrate material with particular crystallographic features
12/23/2014US8916446 Bipolar junction transistor with multiple emitter fingers
12/23/2014US8916444 Non-uniform channel junction-less transistor
12/23/2014US8916442 Method of forming step doping channel profile for super steep retrograde well field effect transistor and resulting device
12/23/2014US8916441 FinFET device and methods of fabrication
12/23/2014US8916440 Semiconductor structures and methods of manufacture
12/23/2014US8916438 Method for fabricating trench type transistor
12/23/2014US8916437 Insulated gate field effect transistor having passivated schottky barriers to the channel
12/23/2014US8916435 Self-aligned bottom plate for metal high-K dielectric metal insulator metal (MIM) embedded dynamic random access memory
12/23/2014US8916434 Enhanced hydrogen barrier encapsulation method for the control of hydrogen induced degradation of ferroelectric capacitors in an F-RAM process
12/23/2014US8916433 Superior integrity of high-k metal gate stacks by capping STI regions
12/23/2014US8916432 Methods to integrate SONOS into CMOS flow
12/23/2014US8916428 Method of forming a semiconductor device
12/23/2014US8916426 Passive devices for FinFET integrated circuit technologies
12/23/2014US8916425 Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device
12/23/2014US8916423 Semiconductor device and method of manufacturing the same
12/23/2014US8916412 High efficiency cadmium telluride solar cell and method of fabrication
12/18/2014US20140370706 Semiconductor device and method for manufacturing the same
12/18/2014US20140370698 Non-Volatile Finfet Memory Array and Manufacturing Method Thereof
12/18/2014US20140370695 Method for fabricating a semiconductor device
12/18/2014US20140370693 Method for Manufacturing a Semiconductor Device Having a Channel Region in a Trench
12/18/2014US20140370683 T-shaped compound semiconductor lateral bipolar transistor on semiconductor-on-insulator
12/18/2014US20140370682 Method of manufacturing semiconductor device
12/18/2014US20140370681 Field-effect transistor (fet) with source-drain contact over gate spacer
12/18/2014US20140370680 Method of fabricating high voltage device
12/18/2014US20140370679 Semiconductor device and method of manufacturing the same
12/18/2014US20140370678 Method for producing a conductive nanoparticle memory device
12/18/2014US20140370677 Semiconductor structure and method of forming the same
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