Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2014
11/18/2014US8890318 Middle of line structures
11/18/2014US8890296 Wafer level chip scale package
11/18/2014US8890293 Guard ring for through vias
11/18/2014US8890289 Semiconductor device and manufacturing method therefor
11/18/2014US8890287 Integrated nano-farad capacitors and method of formation
11/18/2014US8890284 Semiconductor device
11/18/2014US8890283 Wafer with recessed plug
11/18/2014US8890281 Semiconductor device
11/18/2014US8890280 Trench-type semiconductor power devices
11/18/2014US8890279 Trench Schottky rectifier device and method for manufacturing the same
11/18/2014US8890278 Semiconductor device
11/18/2014US8890277 Graphite and/or graphene semiconductor devices
11/18/2014US8890266 Fabrication process and layout for magnetic sensor arrays
11/18/2014US8890265 Semiconductor device and microphone
11/18/2014US8890264 Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface
11/18/2014US8890263 Semiconductor device
11/18/2014US8890262 Semiconductor device having a metal gate recess
11/18/2014US8890261 Fin field effect transistor devices with self-aligned source and drain regions
11/18/2014US8890260 Polysilicon design for replacement gate technology
11/18/2014US8890259 SCR apparatus and method for adjusting the sustaining voltage
11/18/2014US8890258 Semiconductor device and method of forming the same
11/18/2014US8890257 Damascene method of forming a semiconductor structure and a semiconductor structure with multiple fin-shaped channel regions having different widths
11/18/2014US8890256 Structure for heavy ion tolerant device, method of manufacturing the same and structure thereof
11/18/2014US8890255 Structure and method for stress latching in non-planar semiconductor devices
11/18/2014US8890254 Airgap structure and method of manufacturing thereof
11/18/2014US8890253 Semiconductor device
11/18/2014US8890252 Semiconductor device having switching element and free wheel diode and method for controlling the same
11/18/2014US8890251 Semiconductor device and method of manufacturing the same
11/18/2014US8890250 Electrostatic discharge protection structure
11/18/2014US8890248 Bi-directional ESD protection circuit
11/18/2014US8890246 Shielding for high-voltage semiconductor-on-insulator devices
11/18/2014US8890245 Raised source/drain structure for enhanced strain coupling from stress liner
11/18/2014US8890244 Lateral power MOSFET structure and method of manufacture
11/18/2014US8890243 Semiconductor device
11/18/2014US8890242 Closed cell trenched power semiconductor structure
11/18/2014US8890241 Semiconductor device
11/18/2014US8890240 Apparatus and method for power MOS transistor
11/18/2014US8890239 Semiconductor device and method for producing the same
11/18/2014US8890238 Power semiconductor devices, structures, and related methods
11/18/2014US8890237 Power semiconductor device
11/18/2014US8890236 Semiconductor device
11/18/2014US8890235 Nonvolatile semiconductor memory device and method for manufacturing same
11/18/2014US8890234 Nonvolatile semiconductor memory device
11/18/2014US8890233 3D memory array with improved SSL and BL contact layout
11/18/2014US8890232 Methods and apparatus for non-volatile memory cells with increased programming efficiency
11/18/2014US8890231 Nonvolatile semiconductor memory device with a narrowing charge storage layer
11/18/2014US8890229 Nonvolatile semiconductor memory device
11/18/2014US8890228 Semiconductor device and method of manufacturing the same
11/18/2014US8890226 Strained channel dynamic random access memory devices
11/18/2014US8890225 Structure and method for single gate non-volatile memory device having a capacitor well doping design with improved coupling efficiency
11/18/2014US8890224 Semiconductor structures having a metal-insulator-metal capacitor structure
11/18/2014US8890223 High voltage hybrid polymeric-ceramic dielectric capacitor
11/18/2014US8890222 Meander line resistor structure
11/18/2014US8890220 Pixel driver circuit and pixel circuit having control circuit coupled to supply voltage
11/18/2014US8890218 Semiconductor device
11/18/2014US8890216 Methods and apparatus for measuring analytes using large scale FET arrays
11/18/2014US8890214 Method of manufacturing sidewall spacers on a memory device
11/18/2014US8890213 Semiconductor wafer, electronic device, a method of producing semiconductor wafer, and method of producing electronic device
11/18/2014US8890212 Normally-off high electron mobility transistor
11/18/2014US8890211 AC-driven high electron mobility transistor devices
11/18/2014US8890210 Field effect transistor
11/18/2014US8890209 Strained GE-ON-insulator structure and method for forming the same
11/18/2014US8890208 Group III nitride epitaxial substrate for semiconductor device, semiconductor device, and process for producing group III nitride epitaxial substrate for semiconductor device
11/18/2014US8890207 FinFET design controlling channel thickness
11/18/2014US8890206 Compound semiconductor device and method for manufacturing the same
11/18/2014US8890205 Semiconductor component and an operating method for a protective circuit against light attacks
11/18/2014US8890196 Lightweight self-cooling light sources
11/18/2014US8890187 Light-emitting device with an insulating partition
11/18/2014US8890182 Light emitting device, light emitting device package
11/18/2014US8890180 Semiconductor device, display device, and electronic device
11/18/2014US8890178 Light-emitting element
11/18/2014US8890176 Light emitting device package and light unit having the same
11/18/2014US8890175 Nitride-based semiconductor element and method for fabricating the same
11/18/2014US8890172 Method for manufacturing an electro-optical device
11/18/2014US8890171 Method of fabricating single-layer graphene
11/18/2014US8890170 Silicon carbide substrate, semiconductor device and method for manufacturing silicon carbide substrate
11/18/2014US8890169 Semiconductor device
11/18/2014US8890168 Enhancement mode GaN HEMT device
11/18/2014US8890166 Light-emitting device and method for manufacturing the same
11/18/2014US8890165 Method of forming polycrystalline silicon layer, thin film transistor, organic light emitting diode display device having the same, and methods of fabricating the same
11/18/2014US8890163 Semiconductor device including metal silicide layer and method for manufacturing the same
11/18/2014US8890161 Thin film transistor substrate and method for fabricating the same
11/18/2014US8890160 AMOLED display and manufacturing method thereof
11/18/2014US8890159 Oxide semiconductor stacked film and semiconductor device
11/18/2014US8890158 Semiconductor device
11/18/2014US8890157 Pixel structure having patterned transparent conductive layer
11/18/2014US8890156 Active device and active device array substrate
11/18/2014US8890152 Semiconductor device and manufacturing method thereof
11/18/2014US8890150 Semiconductor device
11/18/2014US8890146 Semiconductor device and electronic device
11/18/2014US8890145 Thin film transistors and methods for manufacturing the same
11/18/2014US8890144 High voltage semiconductor device
11/18/2014US8890142 Oxide electronic device and method for manufacturing the same
11/18/2014US8890141 Oxide semiconductor transistors and methods of manufacturing the same
11/18/2014US8890140 Radiation-emitting component with a semiconductor chip and a conversion element and method for the production thereof
11/18/2014US8890139 Solution composition for passivation layer, thin film transistor array panel, and manufacturing method for thin film transistor array panel
11/18/2014US8890131 Deuterated compounds for electronic applications
11/18/2014US8890122 Organic electroluminescent device
11/18/2014US8890121 Integrated nanowire/nanosheet nanogap and nanopore for DNA and RNA sequencing
11/18/2014US8890120 Tunneling field effect transistors (TFETs) for CMOS approaches to fabricating N-type and P-type TFETs
1 ... 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 ... 2182