Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2014
12/24/2014CN104241383A 功率半导体器件及制造工艺 Power semiconductor devices and manufacturing processes
12/24/2014CN104241382A 金属源漏接触、场效应晶体管及其制备方法 Metal source and drain contacts, the field effect transistor and its preparation method
12/24/2014CN104241381A 一种射频ldmos器件及其制备方法 An ldmos RF device and its preparation method
12/24/2014CN104241380A 一种射频ldmos器件及其制备方法 An ldmos RF device and its preparation method
12/24/2014CN104241379A 一种射频ldmos器件及其制备方法 An ldmos RF device and its preparation method
12/24/2014CN104241378A 一种双层石墨烯隧穿场效应晶体管及其制备方法 A two-layer graphene tunneling field effect transistor and its preparation method
12/24/2014CN104241377A 一种射频ldmos器件及其制备方法 An ldmos RF device and its preparation method
12/24/2014CN104241376A 超结结构及其制备方法和半导体器件 Super junction structure and its preparation method and semiconductor device
12/24/2014CN104241375A 一种跨骑型异质结共振隧穿场效应晶体管及其制备方法 A cross-riding resonant tunneling heterojunction field effect transistor and its preparation method
12/24/2014CN104241374A 一种深能级杂质隧穿场效应晶体管及其制备方法 A dark level impurity tunneling field effect transistor and its preparation method
12/24/2014CN104241373A 一种反错层型异质结共振隧穿场效应晶体管及其制备方法 An anti-split resonant tunneling heterojunction field effect transistor and its preparation method
12/24/2014CN104241372A 宽禁带半导体器件及其制备方法 Wide bandgap semiconductor device and method of preparation
12/24/2014CN104241371A 纳米线晶体管 Nanowire transistors
12/24/2014CN104241370A 纳米线晶体管 Nanowire transistors
12/24/2014CN104241369A 半导体器件 Semiconductor devices
12/24/2014CN104241368A 横向扩散的金属氧化物半导体(ldmos) Laterally diffused metal oxide semiconductor (ldmos)
12/24/2014CN104241367A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
12/24/2014CN104241366A FinFET器件的源极区和漏极区中的位错形成 A source region and a drain region FinFET device dislocation formation
12/24/2014CN104241365A 一种soi横向功率mosfet器件 One kind soi lateral power mosfet devices
12/24/2014CN104241364A 双沟渠式mos晶体管元件及其制造方法 Double ditch type mos transistor device and manufacturing method
12/24/2014CN104241363A 沟渠式mos整流元件及其制造方法 Trench-type rectifier device and manufacturing method mos
12/24/2014CN104241362A 半导体器件 Semiconductor devices
12/24/2014CN104241361A 利用应变技术的半导体器件 Strain technology use semiconductor devices
12/24/2014CN104241360A 半导体装置及其制作方法 Semiconductor device and manufacturing method thereof
12/24/2014CN104241359A 半导体结构及其制作方法 The semiconductor structure and method of making
12/24/2014CN104241358A 射频ldmos器件及其制造方法 RF ldmos device and manufacturing method thereof
12/24/2014CN104241357A 一种晶体管、集成电路以及集成电路的制造方法 A method of manufacturing a transistor, integrated circuits, and integrated circuits
12/24/2014CN104241356A 一种dmos器件及其制作方法 Dmos one kind of device and manufacturing method thereof
12/24/2014CN104241355A 半导体器件及其形成方法 Semiconductor device and method for forming
12/24/2014CN104241354A Ldmos晶体管及其形成方法 Ldmos transistor and method of forming
12/24/2014CN104241353A 射频ldmos器件及其制造方法 RF ldmos device and manufacturing method thereof
12/24/2014CN104241352A 一种具有极化诱导掺杂高阻层的GaN基HEMT结构及生长方法 An induced polarization high resistance layer doped GaN-based HEMT structure and growth method
12/24/2014CN104241351A 具有体内复合场板结构的氮化镓基异质结场效应管 In vivo complex field plate structure GaN-based heterostructure FET
12/24/2014CN104241350A 用于常关化合物半导体晶体管的栅极堆叠 For normally-off semiconductor transistor gate stack compound
12/24/2014CN104241349A 一种逆导型绝缘栅双极型晶体管 One kind of inverse conductivity type insulated gate bipolar transistor
12/24/2014CN104241348A 一种低导通电阻的SiC IGBT及其制备方法 A low-resistance SiC IGBT and its preparation method
12/24/2014CN104241347A 半导体装置 Semiconductor device
12/24/2014CN104241346A 绝缘栅双极晶体管及其制备方法 Insulated gate bipolar transistor and its preparation method
12/24/2014CN104241345A 铝电极、形成铝电极的方法及其电子设备 The method of the aluminum electrode, the aluminum electrode is formed and electronic equipment
12/24/2014CN104241344A 沟渠式功率元件及其制造方法 Trench-type power element and manufacturing method thereof
12/24/2014CN104241343A 一种高k/金属栅极结构及其制作方法 A high-k / metal gate structure and production methods
12/24/2014CN104241342A 具有自充电的场电极的半导体器件 A semiconductor device having a field of self-charging electrodes
12/24/2014CN104241341A 一种高频低功耗的功率mos场效应管器件 A high-frequency low-power power mos FET devices
12/24/2014CN104241340A 一种沟槽mos单元及其制备方法 A trench mos unit and its preparation method
12/24/2014CN104241339A 半导体器件结构及其制作方法 The semiconductor device structure and fabrication method thereof
12/24/2014CN104241338A 一种SiC金属氧化物半导体晶体管及其制作方法 Metal-oxide-semiconductor transistor and its manufacturing method of the SiC
12/24/2014CN104241337A 具有复合中心的半导体器件和制造方法 And a method of manufacturing a semiconductor device having a composite center
12/24/2014CN104241336A 包含具有应力通道区的晶体管的设备及其形成方法 The device contains a transistor channel region and having a stress forming method
12/24/2014CN104241335A 一种具有自旋整流特性的ZnO基磁性pn结及其制备方法 ZnO-based magnetic pn junction and its preparation method with spin rectifying property
12/24/2014CN104241334A 无结晶体管 No junction transistor
12/24/2014CN104241299A 氧化物半导体tft基板的制作方法及结构 The method of making a substrate and an oxide semiconductor structure tft
12/24/2014CN104241293A 非易失性存储器结构 Non-volatile memory structure
12/24/2014CN104241292A 非易失性存储器件及其制造方法 Non-volatile memory device and manufacturing method thereof
12/24/2014CN104241287A 半导体装置 Semiconductor device
12/24/2014CN104241285A 一种肖特基势垒二极管芯片及其生产工艺 One kind of the Schottky barrier diode chip and its production process
12/24/2014CN104241284A 双模晶体管装置及其操作方法 Dual-mode transistor device and method of operation
12/24/2014CN104241277A 一种具有高维持电压内嵌gdpmos的scr器件 Maintain a high-voltage devices with embedded gdpmos the scr
12/24/2014CN104241272A 静电放电晶体管及其静电放电保护电路 Electrostatic discharge transistor and electrostatic discharge protection circuit
12/24/2014CN104241266A 半导体整合装置 The semiconductor integrated device
12/24/2014CN104241260A 具有高电子迁移率晶体管和单片集成半导体二极管的高压级联二极管 Having a high electron mobility transistor and the high voltage diode monolithically integrated semiconductor diode cascade
12/24/2014CN104241246A 电熔丝结构及其形成方法、半导体器件及其形成方法 Electrical fuse structure and method of forming a semiconductor device and method of forming
12/24/2014CN104241211A 薄膜晶体管结构、其制造方法以及薄膜晶体管发光元件结构 A thin film transistor structure, its manufacturing method, and a thin film transistor structure of the light emitting element
12/24/2014CN104241207A 半导体及其制造方法 The semiconductor manufacturing method thereof
12/24/2014CN104241141A 一种用于制作嵌入式硅锗应变pmos器件的方法 A method of making embedded SiGe strain method for pmos device
12/24/2014CN104241139A 制作薄膜晶体管的方法及薄膜晶体管 The method of fabricating a thin film transistor and a thin film transistor
12/24/2014CN104241137A 半导体结构及其制造方法 Semiconductor structure and manufacturing method
12/24/2014CN104241136A 用于嵌入式SiGe改良的鳍型场效晶体管间隔物蚀刻 Fin-type field effect transistor for embedded SiGe spacer etch improved
12/24/2014CN104241134A 具有替代鳍的非平面晶体管及其制造方法 Alternative fin having non-planar transistor and manufacturing method thereof
12/24/2014CN104241132A Ldmos及其制造方法 Ldmos and manufacturing method thereof
12/24/2014CN104241130A Pmos晶体管及其形成方法、半导体器件及其形成方法 Pmos transistor and method of forming a semiconductor device and method of forming
12/24/2014CN104241127A 沟道式栅极金氧半场效晶体管及其制造方法 A trench gate metal oxide half-effect transistor and manufacturing method thereof
12/24/2014CN104241126A 沟槽型igbt及制备方法 Igbt trench and preparation methods
12/24/2014CN104241110A 利用氟掺杂形成半导体设备结构的方法及半导体设备结构 The method of forming a semiconductor device using a fluorine-doped semiconductor device structures and structure
12/24/2014CN104241107A 一种半导体结构及其制造方法 A semiconductor structure and its manufacturing method
12/24/2014CN104241093A 用于处理载体的方法和电子部件 The method for processing the carrier and the electronic component
12/24/2014CN104241089A 半导体鳍状结构及其形成方法 Semiconductor fin structure and method of forming
12/24/2014CN104240633A 薄膜晶体管和有源矩阵有机发光二极管组件及其制造方法 A thin film transistor and an active matrix organic light emitting diode assembly and its manufacturing method
12/24/2014CN104237357A 传感元件及其制备方法和传感器 Sensing element and its preparation method and sensor
12/24/2014CN103137565B 衬底材料及其制备方法 Substrate material and its preparation method
12/24/2014CN103038889B 具有氧化物半导体薄膜层的层叠结构以及薄膜晶体管 A laminated structure having an oxide semiconductor thin film layer and a thin film transistor
12/24/2014CN102947359B 固化性组合物和固化膜的制造方法 Method for producing a curable composition and a cured film
12/24/2014CN102916055B 一种沟槽肖特基势垒二极管及其制造方法 A Schottky barrier diode and its manufacturing method trench
12/24/2014CN102751321B 一种槽形栅多晶硅结构的联栅晶体管 Linking a slotted gate polysilicon gate transistor structure
12/24/2014CN102751315B 一种高压终端 A high voltage terminal
12/24/2014CN102751172B 集成无源器件及其制作方法 Integrated passive device and manufacturing method thereof
12/24/2014CN102725850B 具有减小的寄生电容的体接触晶体管 Body-contacted transistor with reduced parasitic capacitance
12/24/2014CN102683385B 半导体结构及其形成方法 And method of forming a semiconductor structure
12/24/2014CN102664196B 阵列基板及多晶硅层的制作方法 The method of making the array substrate and the polycrystalline silicon layer
12/24/2014CN102598275B 具有场板的半导体器件 A semiconductor device having a field plate
12/24/2014CN102576675B 布线层、半导体装置、具有半导体装置的液晶显示装置 The liquid crystal wiring layer, a semiconductor device, a semiconductor device having a display device
12/24/2014CN102569025B 磊晶基板、使用该磊晶基板之半导体发光元件及其制程 Epitaxial substrates using semiconductor light emitting device and method of fabricating the epitaxial substrate
12/24/2014CN102544099B 隧穿场效应晶体管及其制造方法 Tunneling field effect transistor and manufacturing method thereof
12/24/2014CN102543744B 晶体管及其制作方法 Transistor and its manufacturing method
12/24/2014CN102479755B Cmos器件及其制作方法 Cmos device and manufacturing method thereof
12/24/2014CN102414825B 功率用半导体装置 Power semiconductor device
12/24/2014CN102396071B 具有自对准垂直ldd和背面漏极的ldmos With a self-aligned vertical ldd and rear drain ldmos
12/24/2014CN102386221B 化合物半导体器件及其制造方法 A compound semiconductor device and manufacturing method thereof
12/24/2014CN102280492B 非易失性半导体存储器晶体管、非易失性半导体存储器及非易失性半导体存储器的制造方法 The method of manufacturing a nonvolatile semiconductor memory transistor, a nonvolatile semiconductor memory and the nonvolatile semiconductor memory
12/24/2014CN102263124B 半导体器件 Semiconductor devices
12/24/2014CN101997004B 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
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