Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2014
12/25/2014US20140374838 FinFETs with Nitride Liners and Methods of Forming the Same
12/25/2014US20140374836 Method for improving device performance using dual stress liner boundary
12/25/2014US20140374835 Metal gate semiconductor device
12/25/2014US20140374833 Memory Arrays
12/25/2014US20140374832 Beol selectivity stress film
12/25/2014US20140374831 Embedded SRAM and Methods of Forming the Same
12/25/2014US20140374830 Semiconductor device and fabricating method thereof
12/25/2014US20140374829 Integrated circuit device and method for manufacturing same
12/25/2014US20140374827 Semiconductor device and method for fabricating the same
12/25/2014US20140374826 Vertical Gate LDMOS Device
12/25/2014US20140374825 Power Semiconductor Device with Contiguous Gate Trenches and Offset Source Trenches
12/25/2014US20140374823 Enhancing schottky breakdown voltage (bv) without affecting an integrated mosfet-schottky device layout
12/25/2014US20140374822 Semiconductor device and method for manufacturing the same
12/25/2014US20140374821 Semiconductor device and method of manufacturing the same
12/25/2014US20140374820 Dual trench mos transistor and method for forming the same
12/25/2014US20140374819 Semiconductor device and semiconductor device fabrication method
12/25/2014US20140374818 Structure of Trench-Vertical Double Diffused MOS Transistor and Method of Forming the Same
12/25/2014US20140374816 Semiconductor device and method of manufacturing the same
12/25/2014US20140374813 SONOS Stack With Split Nitride Memory Layer
12/25/2014US20140374812 Device including active floating gate region area that is smaller than channel area
12/25/2014US20140374811 Methods of forming semiconductor device structures and related semiconductor devices and structures
12/25/2014US20140374807 METHOD OF DEVICE ISOLATION IN CLADDING Si THROUGH IN SITU DOPING
12/25/2014US20140374806 Four terminal transistor
12/25/2014US20140374804 Micromechanical Sensor Apparatus having a Movable Gate and Corresponding Production Method
12/25/2014US20140374802 Bipolar transistor with maskless self-aligned emitter
12/25/2014US20140374800 Overlapped iii-v finfet with doped semiconductor extensions
12/25/2014US20140374799 Fin tunnel field effect transistor (fet)
12/25/2014US20140374798 Lattice-Mismatched Semiconductor Structures with Reduced Dislocation Defect Densities and Related Methods for Device Fabrication
12/25/2014US20140374797 Semiconductor device and method for fabricating the same
12/25/2014US20140374796 Semiconductor structure with aspect ratio trapping capabilities
12/25/2014US20140374795 Semiconductor system for a current sensor in a power semiconductor
12/25/2014US20140374794 Power semiconductor with a si chip and a wideband chip having matched loss and area ratios
12/25/2014US20140374793 Manufacturing method for semiconductor device
12/25/2014US20140374792 Method for manufacturing a vertical bipolar transistor compatible with cmos manufacturing methods
12/25/2014US20140374791 Semiconductor device
12/25/2014US20140374790 Structure of a Trench MOS Rectifier and Method of Forming the Same
12/25/2014US20140374774 Semiconductor device and method for manufacturing same
12/25/2014US20140374773 Vertical power transistor with built-in gate buffer
12/25/2014US20140374771 Semiconductor multi-layer substrate, semiconductor device, and method for manufacturing the same
12/25/2014US20140374769 Gan-based schottky barrier diode with algan surface layer
12/25/2014US20140374768 High quality gan high-voltage hfets on silicon
12/25/2014US20140374766 Bi-directional gallium nitride switch with self-managed substrate bias
12/25/2014US20140374765 Gate Stack for Normally-Off Compound Semiconductor Transistor
12/25/2014US20140374761 Structure, Method for Manufacturing Structure, and illuminating structure of Thin Film Transistor
12/25/2014US20140374756 Semiconductor device, power diode, and rectifier
12/25/2014US20140374755 Oxide semiconductor film and semiconductor device
12/25/2014US20140374753 Thin film transistor, method for manufacturing same, display device, and method for manufacturing same
12/25/2014US20140374751 Thin film transistor and display panel including the same
12/25/2014US20140374750 Thin film transistor and display panel including the same
12/25/2014US20140374748 Light emitting diodes having zinc oxide fibers over silicon substrates
12/25/2014US20140374746 Thin film transistor and method of fabricating same
12/25/2014US20140374745 Imaging device
12/25/2014US20140374744 Semiconductor device
12/25/2014US20140374743 Oxide semiconductor film and formation method thereof
12/25/2014US20140374741 Oxide semiconductor, oxide semiconductor thin film, and thin film transistor including the same
12/25/2014US20140374739 Oxide semiconductor thin film transistor and manufacturing method thereof
12/25/2014US20140374718 Thin film transistor and active matrix organic light emitting diode assembly and method for manufacturing the same
12/25/2014US20140374714 Thin film transistor and active matrix organic light emitting diode assembly and method for manufacturing the same
12/25/2014US20140374702 Carbon nanostructure device fabrication utilizing protect layers
12/25/2014US20140373600 Gas sensors and methods of preparation thereof
12/24/2014CN204045600U 一种瞬态抑制二极管 One kind TVS Diodes
12/24/2014CN204045599U 一种双芯片高反压塑封功率二极管 A dual-chip high-power diode plastic backpressure
12/24/2014CN204045598U 一种塑封二极管 One kind of plastic diode
12/24/2014CN204045597U 一种整流二极管 One kind of rectifier diodes
12/24/2014CN204045596U 聚酰亚胺胶保护芯片台面的塑封功率二极管 Polyimide plastic protective plastic power diode chip countertops
12/24/2014CN204045595U 一种半导体结构 A semiconductor structure
12/24/2014CN204045578U 一种微小型片式大电流三极管 A micro small chip high current transistor
12/24/2014CN204045569U 一种光伏防反二极管 A photovoltaic blocking diode
12/24/2014CN1866545B 空气隧道浮栅存储单元及其制造方法 Air tunnel floating gate memory cell and its manufacturing method
12/24/2014CN104247054A 具有纳米结构和纳米金属光学腔和天线的发光二极管,快光子-电子源和光电探测器,以及其制造方法 And nano-metal having a nanostructure optical cavity light emitting diode and the antenna, fast photon - electron source and a photodetector, and a manufacturing method thereof
12/24/2014CN104247031A 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof
12/24/2014CN104247030A 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof
12/24/2014CN104247029A 功率场效应晶体管 Power field effect transistor
12/24/2014CN104247028A 半导体装置以及半导体装置的制造方法 The method of manufacturing a semiconductor device and a semiconductor device
12/24/2014CN104247027A 功率晶体管模块 Power Transistor Module
12/24/2014CN104247026A 碳化硅半导体装置及其制造方法 Silicon carbide semiconductor device and manufacturing method thereof
12/24/2014CN104247025A 具有高发射极栅极电容的绝缘栅双极晶体管 An emitter having a high gate capacitance of an insulated gate bipolar transistor
12/24/2014CN104247024A 碳化硅半导体器件 Silicon carbide semiconductor device
12/24/2014CN104247023A 抗变化的金属氧化物半导体场效应晶体管(mosfet) Anti changing metal oxide semiconductor field effect transistor (mosfet)
12/24/2014CN104247022A 固体摄像装置以及其制造方法 Solid-state imaging device and manufacturing method thereof
12/24/2014CN104247015A 具有有源漂移区带的半导体布置 A semiconductor arrangement of the active zone of the drift
12/24/2014CN104247014A 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof
12/24/2014CN104246994A 具有鳍结构的半导体器件和形成具有鳍结构的半导体器件的方法 A semiconductor device having a fin structure and a method for forming a semiconductor device having a fin structure
12/24/2014CN104241400A 场效应二极管及其制备方法 FET diode and its preparation method
12/24/2014CN104241399A 一种点接触型二极管 For point-contact diode
12/24/2014CN104241398A 半导体元件、半导体元件的制造方法 The method of manufacturing a semiconductor device, a semiconductor element
12/24/2014CN104241397A 一种双层肖特基势垒mos晶体管及其制备方法 A two-layer Schottky barrier mos transistor and its preparation method
12/24/2014CN104241396A n沟道SONOS器件及其编译方法 n-channel devices and compilation methods SONOS
12/24/2014CN104241395A 一种薄膜晶体管、阵列基板、以及显示装置 A thin film transistor array substrate, and a display device
12/24/2014CN104241394A 一种薄膜晶体管及相应的制备方法、显示基板和显示装置 A thin film transistor and a corresponding production method, the display substrate and a display device
12/24/2014CN104241393A 一种薄膜晶体管及其制备方法 A thin film transistor and its preparation method
12/24/2014CN104241392A 一种薄膜晶体管及其制备方法、显示基板和显示设备 A thin film transistor and its preparation method, the display substrate and a display device
12/24/2014CN104241391A 薄膜晶体管 Thin film transistor
12/24/2014CN104241390A 薄膜晶体管和有源矩阵有机发光二极管组件及制造方法 A thin film transistor and an active matrix organic light emitting diode display package and method of manufacture
12/24/2014CN104241389A 薄膜晶体管和有源矩阵有机发光二极管组件及制造方法 A thin film transistor and an active matrix organic light emitting diode display package and method of manufacture
12/24/2014CN104241388A 一种带三角槽的soi-ldmos高压功率器件 Soi-ldmos a high-voltage power devices with a triangular groove
12/24/2014CN104241387A 一种双栅极沟槽mos单元及其制备方法 A dual gate trench mos unit and its preparation method
12/24/2014CN104241386A 具有低特征导通电阻的功率mosfet器件及其制造方法 Power mosfet device and manufacturing method features a low on-resistance
12/24/2014CN104241385A 具有较小版图面积的环栅场效应晶体管及其制备方法 Ring-gate field effect transistor and its preparation method has a smaller layout area of
12/24/2014CN104241384A 横向双扩散金属氧化物半导体晶体管及其制造方法 Lateral double diffused metal oxide semiconductor transistor and its manufacturing method
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