Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2014
11/20/2014US20140342510 Bulk finfet esd devices
11/20/2014US20140342509 Module and Assembly with Dual DC-Links for Three-Level NPC Applications
11/20/2014US20140342499 Semiconductor device and manufacturing method thereof
11/20/2014US20140342498 Semiconductor device and method for manufacturing the same
11/20/2014US20140340607 Semiconductor device, method for fabricating the semiconductor device and display device
11/20/2014US20140340606 Display device comprising a tft with a barrier metal formed of a first layer and a second layer wherein an amount of oxygen in the first layer is larger than in the second layer
11/20/2014US20140340604 Thin Film Transistor, Method for Manufacturing the Same, and LCD Device Having the Same
11/20/2014US20140340128 Organic Zener Diode, Electronic Circuit, and Method for Operating an Organic Zener Diode
11/20/2014US20140339686 Group III-V Device with a Selectively Modified Impurity Concentration
11/20/2014US20140339682 Semiconductor device and method for manufacturing semiconductor device
11/20/2014US20140339681 Method for fabricating a composite structure to be separated by exfoliation
11/20/2014US20140339680 III-V Device and Method for Manufacturing Thereof
11/20/2014US20140339679 Nitride semiconductor substrate
11/20/2014US20140339678 Ultrashallow Emitter Formation Using ALD and High Temperature Short Time Annealing
11/20/2014US20140339677 Hybrid plasma-semiconductor transistors, logic devices and arrays
11/20/2014US20140339676 Semiconductor device and method of forming the same
11/20/2014US20140339671 Method to form stepped dielectric for field plate formation
11/20/2014US20140339670 Semiconductor Device with a Thick Bottom Field Plate Trench Having a Single Dielectric and Angled Sidewalls
11/20/2014US20140339669 Semiconductor Device with a Field Plate Trench Having a Thick Bottom Dielectric
11/20/2014US20140339652 Semiconductor device with oxygen-containing metal gates
11/20/2014US20140339651 Semiconductor Device with a Field Plate Double Trench Having a Thick Bottom Dielectric
11/20/2014US20140339650 Transistors having features which preclude straight-line lateral conductive paths from a channel reqion to a source/drain reqion
11/20/2014US20140339649 Finfet type device using ldmos
11/20/2014US20140339648 Transistors with an extension region having strips of differing conductivity type
11/20/2014US20140339645 Methods of forming semiconductor devices with different insulation thicknesses on the same semiconductor substrate and the resulting devices
11/20/2014US20140339642 Reduction of oxide recesses for gate height control
11/20/2014US20140339640 Finfet with vertical silicide structure
11/20/2014US20140339639 Multi-direction wiring for replacement gate lines
11/20/2014US20140339637 Method of forming semiconductor device
11/20/2014US20140339636 High voltage metal-oxide-semiconductor transistor device
11/20/2014US20140339635 Semiconductor device
11/20/2014US20140339634 Lateral Transistor Component and Method for Producing Same
11/20/2014US20140339633 Semiconductor Device, Integrated Circuit and Method of Manufacturing a Semiconductor Device
11/20/2014US20140339632 Semiconductor structure and method for manufacturing the same
11/20/2014US20140339631 Innovative Approach of 4F2 Driver Formation for High-Density RRAM and MRAM
11/20/2014US20140339630 Device structure and methods of making high density mosfets for load switch and dc-dc applications
11/20/2014US20140339629 Contact formation for ultra-scaled devices
11/20/2014US20140339628 Semiconductor device
11/20/2014US20140339627 Semiconductor device
11/20/2014US20140339626 MEMORY DEVICE HAVING STITCHED ARRAYS OF 4 F+hu 2 +l MEMORY CELLS
11/20/2014US20140339625 Pseudo self aligned radhard mosfet and process of manufacture
11/20/2014US20140339624 Charge-Retaining Transistor, Array Of Memory Cells, and Methods Of Forming A Charge-Retaining Transistor
11/20/2014US20140339623 Nonvolatile semiconductor memory device
11/20/2014US20140339622 Nonvolatile semiconductor memory device and manufacturing method thereof
11/20/2014US20140339619 Semiconductor device
11/20/2014US20140339617 Magnetic field effect transistor
11/20/2014US20140339613 Semiconductor device and method of manufacturing same
11/20/2014US20140339612 Using sacrificial oxide layer for gate length tuning and resulting device
11/20/2014US20140339611 Stacked semiconductor nanowires with tunnel spacers
11/20/2014US20140339610 Finfet device and method of fabrication
11/20/2014US20140339605 Group III-V Device with a Selectively Reduced Impurity Concentration
11/20/2014US20140339604 Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by creating a patterning non-uniformity at the bottom of the gate electrode
11/20/2014US20140339603 Semiconductor device and method of manufacturing a semiconductor device
11/20/2014US20140339602 Semiconductor device
11/20/2014US20140339600 Semiconductor device
11/20/2014US20140339599 Semiconductor device
11/20/2014US20140339572 Memory with carbon-containing silicon channel
11/20/2014US20140339571 Silicon carbide epitaxial wafer and manufacturing method therefor
11/20/2014US20140339569 Semiconductor device
11/20/2014US20140339568 Semiconductor device with substrate via hole and method to form the same
11/20/2014US20140339564 Peeling method and method for manufacturing display device using the peeling method
11/20/2014US20140339562 Thin-Film Transistor Sensor and Method of Manufacturing the TFT Sensor
11/20/2014US20140339560 Semiconductor device
11/20/2014US20140339557 Semiconductor device
11/20/2014US20140339556 Semiconductor device
11/20/2014US20140339555 Semiconductor device
11/20/2014US20140339552 Semiconductor device and manufacturing method thereof
11/20/2014US20140339550 Laminated structure, ferroelectric gate thin film transistor, and ferroelectric thin film capacitor
11/20/2014US20140339549 Semiconductor Device and Method for Manufacturing the Same
11/20/2014US20140339548 Semiconductor device
11/20/2014US20140339547 Semiconductor device and method for manufacturing the same
11/20/2014US20140339546 Semiconductor device
11/20/2014US20140339545 Semiconductor device, method for manufacturing the same, and apparatus for manufacturing semiconductor device
11/20/2014US20140339544 Semiconductor device
11/20/2014US20140339542 Semiconductor device
11/20/2014US20140339539 Semiconductor device
11/20/2014US20140339538 Semiconductor device
11/20/2014US20140339537 Oxide thin film transistor and method of fabricating the same
11/20/2014US20140339536 Tft with insert in passivation layer or etch stop layer
11/20/2014US20140339507 Stacked semiconductor nanowires with tunnel spacers
11/20/2014US20140339506 Formation of large scale single crystalline graphene
11/20/2014US20140339505 Virtual substrates by having thick, highly relaxed metamorphic buffer layer structures by hydride vapor phase epitaxy
11/20/2014US20140339501 Low-Resistivity p-Type GaSb Quantum Wells for Low-Power Electronic Devices
11/18/2014USRE45245 Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
11/18/2014US8893072 Equivalent circuit of semiconductor device, simulation method for semiconductor device, and simulation device for semiconductor device
11/18/2014US8892158 Semiconductor device
11/18/2014US8891573 6.1 angstrom III-V and II-VI semiconductor platform
11/18/2014US8891316 Nonvolatile memory devices including notched word lines
11/18/2014US8891299 MOSFET having memory characteristics
11/18/2014US8891284 Memristors based on mixed-metal-valence compounds
11/18/2014US8891213 Integrated electrostatic discharge (ESD) device
11/18/2014US8890857 Active matrix display device
11/18/2014US8890406 Flat panel display and method of fabricating the same
11/18/2014US8890337 Column and stacking balls package fabrication method and structure
11/18/2014US8890335 Semiconductor device
11/18/2014US8890333 Apparatus for stacked semiconductor chips
11/18/2014US8890332 Semiconductor chip layout with staggered Tx and Tx data lines
11/18/2014US8890330 Semiconductor packages and electronic systems including the same
11/18/2014US8890329 Semiconductor device
11/18/2014US8890324 Semiconductor structure having a through substrate via (TSV) and method for forming
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