Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2014
12/18/2014US20140370676 Semiconductor device, memory system including the same, and method of manufacturing the same
12/18/2014US20140370674 Semiconductor device and manufacturing method thereof
12/18/2014US20140370670 Semiconductor device and manufacturing method thereof
12/18/2014US20140370669 Method and system for a gallium nitride vertical jfet with self-aligned source and gate
12/18/2014US20140370668 Method of making a transitor
12/18/2014US20140370667 Tapered nanowire structure with reduced off current
12/18/2014US20140370666 Method of making a semiconductor layer having at least two different thicknesses
12/18/2014US20140370665 Power semiconductor device and method for manufacturing such a power semiconductor device
12/18/2014US20140370657 Method of manufacturing semiconductor device
12/18/2014US20140370655 Gate Insulator Loss Free Etch-Stop Oxide Thin Film Transistor
12/18/2014US20140370654 Semiconductor device and manufacturing method thereof
12/18/2014US20140370653 Sputtering target and method for manufacturing semiconductor device
12/18/2014US20140370637 Nanochannel process and structure for bio-detection
12/18/2014US20140369920 Group III Nitride Crystal Substrates and Group III Nitride Crystal
12/18/2014US20140369115 Semiconductor device, method for fabricating the same, and memory system including the semiconductor device
12/18/2014US20140369080 Compound semiconductor device and method of manufacturing the same
12/18/2014US20140368417 Liquid crystal display device and electronic device including the liquid crystal display device
12/18/2014US20140367834 Nanostructure and process of fabricating same
12/18/2014US20140367832 Three-terminal Variable Capacitor
12/18/2014US20140367831 Variable capacitance devices
12/18/2014US20140367829 ESD Protection Apparatus
12/18/2014US20140367827 Metal capacitor with inner first terminal and outer second terminal
12/18/2014US20140367825 Semiconductor devices including empty spaces and methods of forming the same
12/18/2014US20140367804 Transistor gate and process for making transistor gate
12/18/2014US20140367803 Finfet gate with insulated vias and method of making same
12/18/2014US20140367802 Self-aligned insulated film for high-k metal gate device
12/18/2014US20140367801 Mechanism for forming metal gate structure
12/18/2014US20140367800 Semiconductor device with strain technique
12/18/2014US20140367798 Non-planar transistor
12/18/2014US20140367797 Field-effect transistor
12/18/2014US20140367796 Mos device assembly
12/18/2014US20140367793 Integrated circuits with resistors
12/18/2014US20140367792 Structure and method of latchup robustness with placement of through wafer via within cmos circuitry
12/18/2014US20140367785 Method of Fabricating a FinFET Device
12/18/2014US20140367784 Component, for example nmos transistor, with active region with relaxed compression stresses, and fabrication method
12/18/2014US20140367780 Semiconductor integrated device
12/18/2014US20140367779 Semiconductor structure and process thereof
12/18/2014US20140367778 Lateral diffusion metal oxide semiconductor (ldmos)
12/18/2014US20140367776 Semiconductor device and manufacture method thereof
12/18/2014US20140367775 Semiconductor device and method for forming the same
12/18/2014US20140367774 Semiconductor Devices Having Partially Oxidized Gate Electrodes
12/18/2014US20140367773 Method of Manufacturing a Semiconductor Device with Self-Aligned Contact Plugs and Semiconductor Device
12/18/2014US20140367772 Semiconductor Device Including a Drift Zone and a Drift Control Zone
12/18/2014US20140367771 High voltage semiconductor devices and methods of making the devices
12/18/2014US20140367770 Semiconductor device and method of manufacturing the same
12/18/2014US20140367769 Semiconductor device and method for manufacturing the same
12/18/2014US20140367768 Semiconductor device and fabrication method thereof
12/18/2014US20140367767 Semiconductor device and manufacturing method thereof
12/18/2014US20140367766 Nonvolatile semiconductor storage device and method of manufacture thereof
12/18/2014US20140367764 Semiconductor devices and methods of fabricating the same
12/18/2014US20140367763 Semiconductor memory device
12/18/2014US20140367762 Method of forming an active area with floating gate negative offset profile in fg nand memory
12/18/2014US20140367761 Non-volatile memory device and method of fabricating the same
12/18/2014US20140367754 Method for manufacturing semiconductor device and semiconductor device
12/18/2014US20140367753 Cmos device with double-sided terminals and method of making the same
12/18/2014US20140367752 Transistor having all-around source/drain metal contact channel stressor and method to fabricate same
12/18/2014US20140367751 FINFET SPACER ETCH FOR eSiGe IMPROVEMENT
12/18/2014US20140367745 T-shaped compound semiconductor lateral bipolar transistor on semiconductor-on-insulator
12/18/2014US20140367744 Monolithic Integrated Composite Group III-V and Group IV Semiconductor Device and IC
12/18/2014US20140367743 Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor
12/18/2014US20140367742 Normally-off-type heterojunction field-effect transistor
12/18/2014US20140367741 Semiconductor device
12/18/2014US20140367739 Semiconductor device and an electronic device
12/18/2014US20140367738 Semiconductor device
12/18/2014US20140367737 Semiconductor device and method of manufacturing semiconductor device
12/18/2014US20140367736 Semiconductor device and method for manufacturing semiconductor device
12/18/2014US20140367702 Semiconductor device and method of manufacturing the same
12/18/2014US20140367700 High-Voltage Cascaded Diode with HEMT and Monolithically Integrated Semiconductor Diode
12/18/2014US20140367699 Method for fabricating semiconductor device and the semiconductor device
12/18/2014US20140367698 Method of controlling stress in group-iii nitride films deposited on substrates
12/18/2014US20140367695 Trench high electron mobility transistor device
12/18/2014US20140367694 Semiconductor device and manufacturing method thereof
12/18/2014US20140367690 Illumination apparatus
12/18/2014US20140367689 Transistor and method of fabricating the same
12/18/2014US20140367688 Thin film transistor array substrate and method for fabricating the same
12/18/2014US20140367687 Small-scale fabrication systems and methods
12/18/2014US20140367685 Semiconductor substrate and semiconductor chip
12/18/2014US20140367683 Oxide semiconductor, thin film transistor array substrate and production method thereof, and display device
12/18/2014US20140367682 Semiconductor device and method for manufacturing the same
12/18/2014US20140367680 Method for manufacturing oxide semiconductor device
12/18/2014US20140367679 Semiconductor device
12/18/2014US20140367678 Semiconductor Element, Semiconductor Device, And Method For Manufacturing The Same
12/18/2014US20140367677 Semiconductor device and method for producing same
12/18/2014US20140367676 Process for the production of electrically semiconducting or conducting metal-oxide layers having improved conductivity
12/18/2014US20140367674 Process for forming an amorphous conductive oxide film
12/18/2014US20140367642 Process for Preparing Graphene on a SiC Substrate Based on Metal Film-Assisted Annealing
12/17/2014CN204029816U 一种贴片式二极管 A patch diode
12/17/2014CN204029815U 横向对称dm0s管 Laterally symmetrical dm0s tube
12/17/2014CN204029814U 具有终端结构的场截止型igbt器件 Field cut-off device has a terminal structure igbt
12/17/2014CN204029813U 耐高压沟槽式整流器件 High voltage rectifier trench
12/17/2014CN204029812U 一种具有自补偿背封层的半导体衬底 A kind of self-compensation back sealing layer of the semiconductor substrate
12/17/2014CN204029809U 显示面板的阵列基板 Array substrate of the display panel
12/17/2014CN204029806U 一种阵列基板、显示面板、显示装置 One kind of array substrate, a display panel, a display device
12/17/2014CN204029804U 一种柔性基板、柔性显示面板和柔性显示装置 A flexible substrate, a flexible display and a flexible display panel
12/17/2014CN204029795U 瞬变电压抑制二极管器件 Transient voltage suppression diode device
12/17/2014CN104221156A 二极管 Diode
12/17/2014CN104221155A 半导体器件、显示器及制造半导体器件的方法 The method of the semiconductor device, a display and a semiconductor device manufacturing
12/17/2014CN104221154A 薄膜晶体管及薄膜晶体管的制造方法 The method of manufacturing a thin film transistor and the thin film transistor
12/17/2014CN104221153A 半导体装置 Semiconductor device
12/17/2014CN104221152A 半导体装置以及半导体装置的制造方法 The method of manufacturing a semiconductor device and a semiconductor device
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