| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/01/2015 | US20150001625 Structure and method of high-performance extremely thin silicon on insulator complementary metal-oxide-semiconductor transistors with dual stress buried insulators |
| 01/01/2015 | US20150001623 Field effect transistor and method for forming the same |
| 01/01/2015 | US20150001622 Thin body switch transistor |
| 01/01/2015 | US20150001621 Semiconductor device |
| 01/01/2015 | US20150001620 Ldmos device with improved avalanche energy and associated fabricating method |
| 01/01/2015 | US20150001619 High side dmos and the method for forming thereof |
| 01/01/2015 | US20150001617 Semiconductor devices including vertical channel transistors and methods of fabricating the same |
| 01/01/2015 | US20150001616 Trench mosfet with integrated schottky barrier diode |
| 01/01/2015 | US20150001615 Optimization of manufacturing methodology: p-channel trench mos with low vth and n-type poly |
| 01/01/2015 | US20150001614 Semiconductor device having a surround gate transistor |
| 01/01/2015 | US20150001612 Non-volatile memory (nvm) and high voltage transistor integration |
| 01/01/2015 | US20150001610 Integrated circuits having improved split-gate nonvolatile memory devices and methods for fabrication of same |
| 01/01/2015 | US20150001608 Simple and cost-free mtp structure |
| 01/01/2015 | US20150001607 Nand string containing self-aligned control gate sidewall cladding |
| 01/01/2015 | US20150001606 Methods and structures for a split gate memory cell structure |
| 01/01/2015 | US20150001605 Gate Constructions Of Recessed Access Devices And Methods Of Forming Gate Constructions Of Recessed Access Devices |
| 01/01/2015 | US20150001603 Asymmetric Dense Floating Gate Nonvolatile Memory with Decoupled Capacitor |
| 01/01/2015 | US20150001601 Spin injection electrode structure and spin transport element having the same |
| 01/01/2015 | US20150001598 Divot-free planarization dielectric layer for replacement gate |
| 01/01/2015 | US20150001597 Substantially planar electronic devices and circuits |
| 01/01/2015 | US20150001596 Radiation tolerant dummy gate-assisted n-mosfet, and method and apparatus for modeling channel of semiconductor device |
| 01/01/2015 | US20150001595 Finfet with multiple concentration percentages |
| 01/01/2015 | US20150001594 Forming tunneling field-effect transistor with stacking fault and resulting device |
| 01/01/2015 | US20150001593 Method for Forming Multi-Gate Device with Dual Channel |
| 01/01/2015 | US20150001591 Bulk finfet with partial dielectric isolation featuring a punch-through stopping layer under the oxide |
| 01/01/2015 | US20150001587 Methods of forming group iii-v semiconductor materials on group iv substrates and the resulting substrate structures |
| 01/01/2015 | US20150001586 Nitride semiconductor device |
| 01/01/2015 | US20150001585 Tucked active region without dummy poly for performance boost and variation reduction |
| 01/01/2015 | US20150001584 Replacement channel |
| 01/01/2015 | US20150001583 Novel embedded shape sige for nfet channel strain |
| 01/01/2015 | US20150001582 HEMT Structure with Iron-Doping-Stop Component and Methods of Forming |
| 01/01/2015 | US20150001579 Semiconductor device and method for producing the same |
| 01/01/2015 | US20150001578 Power semiconductor device and method of manufacturing the same |
| 01/01/2015 | US20150001577 Design and manufacture of a tunnel diode memory |
| 01/01/2015 | US20150001554 Silicon carbide semiconductor device |
| 01/01/2015 | US20150001553 Semiconductor device |
| 01/01/2015 | US20150001552 Semiconductor device |
| 01/01/2015 | US20150001551 Over-voltage protection of gallium nitride semiconductor devices |
| 01/01/2015 | US20150001550 Selectively Area Regrown III-Nitride High Electron Mobility Transistor |
| 01/01/2015 | US20150001549 Semiconductor device |
| 01/01/2015 | US20150001547 Nitride semiconductor element, nitride semiconductor wafer, and method for forming nitride semiconductor layer |
| 01/01/2015 | US20150001546 Liquid crystal display device |
| 01/01/2015 | US20150001545 Semiconductor display device |
| 01/01/2015 | US20150001542 Thin film transistor substrate having metal oxide semiconductor and manufacturing the same |
| 01/01/2015 | US20150001539 Flexible high-voltage thin film transistors |
| 01/01/2015 | US20150001537 Charge ordered vertical transistors |
| 01/01/2015 | US20150001536 Thin film transistor and method for fabricating thin film transistor |
| 01/01/2015 | US20150001535 P-Type Semiconductor Material and Semiconductor Device |
| 01/01/2015 | US20150001534 Thin film transistor and fabricating method thereof |
| 01/01/2015 | US20150001533 Semiconductor device |
| 01/01/2015 | US20150001532 Semiconductor device |
| 01/01/2015 | US20150001531 Field-effect transistor, display element, image display device, and system |
| 01/01/2015 | US20150001529 Storage device and semiconductor device |
| 01/01/2015 | US20150001528 Solution-processed sol-gel films, devices including same, and methods |
| 01/01/2015 | US20150001526 Oxide semiconductor thin film transistor |
| 01/01/2015 | US20150001523 Thin film transistor and organic light emitting device including polycrystalline silicon layer |
| 01/01/2015 | US20150001484 Thin film transistor and organic light emitting diode display |
| 01/01/2015 | US20150001469 Quantum Tunneling Devices and Circuits with Lattice-Mismatched Semiconductor Structures |
| 01/01/2015 | US20150001468 Fets and methods for forming the same |
| 01/01/2015 | US20150001467 Semiconductor device having superlattice thin film laminated by semiconductor layer and insulator layer |
| 01/01/2015 | US20150001462 Stretchable Form of Single Crystal Silicon for High Performance Electronics on Rubber Substrates |
| 01/01/2015 | US20150000728 Titanium oxide laminated film, titanium oxide film, manufacturing method for same, precursor liquid for titanium oxide, and dye-sensitized agent type photoelectric conversion element |
| 01/01/2015 | US20150000376 Sensor component for a gas and/or liquid sensor, production method for a sensor component for a gas and/or liquid sensor, and method for detecting at least one material in a gaseous and/or liquid medium |
| 12/31/2014 | CN204067374U 一种大功率大电流二极管封装结构 One kind of high-power high-current diode package structure |
| 12/31/2014 | CN204067373U 一种电子元件检波二极管 An electronic component detector diode |
| 12/31/2014 | CN204067372U 一种异质结构整流二极管 A heterostructure rectifier diode |
| 12/31/2014 | CN204067371U 高耐压ldmos器件 High pressure ldmos devices |
| 12/31/2014 | CN204067370U 宽禁带半导体器件 Wide bandgap semiconductor devices |
| 12/31/2014 | CN204067369U 垂直mos功率器件 Vertical mos power devices |
| 12/31/2014 | CN204067368U 一种改善有源区与终端连接区场强均匀性的igbt器件 A method for improving the active region and the terminal connection area field uniformity igbt devices |
| 12/31/2014 | CN204067367U 功率半导体器件 Power semiconductor devices |
| 12/31/2014 | CN204067366U 一种晶闸管芯片的结终端结构 Junction termination structure for a thyristor chips |
| 12/31/2014 | CN204067365U 一种二极管芯片的结终端结构 Junction termination structure for a diode chip |
| 12/31/2014 | CN204067364U 一种带分压环结构的片上高压电阻 An on-chip with a sub-structure of the high-voltage resistance pressure ring |
| 12/31/2014 | CN204067359U 一种肖特基势垒二极管芯片 One kind of Schottky barrier diode chip |
| 12/31/2014 | CN1998087B 非晶形氧化物和薄膜晶体管 Amorphous oxide and a thin film transistor |
| 12/31/2014 | CN1581439B 半导体器件以及用于制造半导体器件的方法 A semiconductor device and a method for manufacturing a semiconductor device |
| 12/31/2014 | CN104254921A 具有分离氮化物存储层的sonos堆栈 Nitride storage layer having a separate stack of sonos |
| 12/31/2014 | CN104254920A 半导体装置及半导体装置的制造方法 Semiconductor device and manufacturing method of a semiconductor device |
| 12/31/2014 | CN104254914A 制造金属栅极的方法 The method of making a metal gate |
| 12/31/2014 | CN104254908A Iii族氮化物半导体叠层衬底和iii族氮化物半导体场效应晶体管 Iii nitride semiconductor stacked substrate and iii nitride semiconductor field effect transistor |
| 12/31/2014 | CN104254907A 半导体接合保护用玻璃复合物、半导体装置的制造方法以及半导体装置 Bonding a semiconductor protective glass composite, a method of manufacturing a semiconductor device and a semiconductor device |
| 12/31/2014 | CN104253599A 半导体装置 Semiconductor device |
| 12/31/2014 | CN104253180A 氮化物半导体元件、氮化物半导体晶片和形成氮化物半导体层的方法 Nitride semiconductor device, the nitride semiconductor wafer to form a nitride semiconductor layer and a method |
| 12/31/2014 | CN104253164A 带有集成肖特基二极管的mosfet With integrated Schottky diode mosfet |
| 12/31/2014 | CN104253163A 肖特基二极管结构 Schottky diode structure |
| 12/31/2014 | CN104253162A 双向esd二极管结构及其形成方法 Esd bidirectional diode structure and method of forming |
| 12/31/2014 | CN104253161A 一种具有凸面栅极结构的B4-Flash Gate structure having a convex B4-Flash |
| 12/31/2014 | CN104253160A 一种具有凸面栅极结构的B4-Flash Gate structure having a convex B4-Flash |
| 12/31/2014 | CN104253159A 薄膜晶体管及制备方法、阵列基板及制备方法和显示装置 Thin film transistor and method of preparation, array substrate preparation method and display device |
| 12/31/2014 | CN104253158A 薄膜晶体管及其制造方法 A thin film transistor and manufacturing method thereof |
| 12/31/2014 | CN104253157A 薄本体开关晶体管 Thin body switching transistor |
| 12/31/2014 | CN104253156A 具有水平半导体元件和垂直半导体元件的半导体部件 Semiconductor component having a semiconductor element and the vertical level of the semiconductor element |
| 12/31/2014 | CN104253155A 功率器件及其制造方法 Power device and manufacturing method thereof |
| 12/31/2014 | CN104253154A 一种具有内置二极管的igbt及其制造方法 Igbt having a built-in diode and its manufacturing method |
| 12/31/2014 | CN104253153A 场截止型反向导通绝缘栅双极型晶体管及其制造方法 Field cut-off reverse-conducting insulated gate bipolar transistor and its manufacturing method |
| 12/31/2014 | CN104253152A 一种igbt及其制造方法 One kind igbt its manufacturing method |
| 12/31/2014 | CN104253151A 场截止型反向导通绝缘栅双极型晶体管及其制造方法 Field cut-off reverse-conducting insulated gate bipolar transistor and its manufacturing method |
| 12/31/2014 | CN104253150A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 12/31/2014 | CN104253132A 具有金属氧化物半导体的薄膜晶体管基板及其制造方法 The thin film transistor substrate and manufacturing method of a metal oxide semiconductor |