Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2014
12/02/2014US8900961 Selective deposition of germanium spacers on nitride
12/02/2014US8900960 Integrated circuit device with well controlled surface proximity and method of manufacturing same
12/02/2014US8900959 Non-replacement gate nanomesh field effect transistor with pad regions
12/02/2014US8900958 Epitaxial formation mechanisms of source and drain regions
12/02/2014US8900957 Method of dual epi process for semiconductor device
12/02/2014US8900956 Method of dual EPI process for semiconductor device
12/02/2014US8900955 Thin film transistor device with accurately aligned electrode patterns
12/02/2014US8900954 Blanket short channel roll-up implant with non-angled long channel compensating implant through patterned opening
12/02/2014US8900953 Crystal manufacturing apparatus, semiconductor device manufactured using the same, and method of manufacturing semiconductor device using the same
12/02/2014US8900952 Gate stack including a high-k gate dielectric that is optimized for low voltage applications
12/02/2014US8900951 Gate-all-around nanowire MOSFET and method of formation
12/02/2014US8900950 Trench power MOSFET structure with high cell density and fabrication method thereof
12/02/2014US8900949 Staggered column superjunction
12/02/2014US8900946 Method of forming layers using atomic layer deposition
12/02/2014US8900944 Methods of manufacturing a semiconductor device
12/02/2014US8900943 Vertical power MOSFET and IGBT fabrication process with two fewer photomasks
12/02/2014US8900942 Semiconductor devices and methods of fabricating the same
12/02/2014US8900939 Transistor with enhanced channel charge inducing material layer and threshold voltage control
12/02/2014US8900938 Manufacturing method of array substrate, array substrate and LCD device
12/02/2014US8900937 FinFET device structure and methods of making same
12/02/2014US8900936 FinFET device having reduce capacitance, access resistance, and contact resistance
12/02/2014US8900935 Deposition on a nanowire using atomic layer deposition
12/02/2014US8900934 FinFET devices containing merged epitaxial Fin-containing contact regions
12/02/2014US8900932 Thermal enhanced package
12/02/2014US8900931 In-situ cavity integrated circuit package
12/02/2014US8900929 Semiconductor device and method for forming openings and trenches in insulating layer by first LDA and second LDA for RDL formation
12/02/2014US8900925 Method for manufacturing a diode, and a diode
12/02/2014US8900918 Graphene channel-based devices and methods for fabrication thereof
12/02/2014US8900917 Semiconductor device and method for manufacturing the same
12/02/2014US8900914 TFT substrate and method for manufacturing same
12/02/2014US8900905 MEMS device and method of forming the same
12/02/2014US8900899 Method for production of optical waveguides and coupling and devices made from the same
12/02/2014US8900898 Organic light-emitting display having light blocking layer formed over pixel defining layer
12/02/2014US8900893 Vertical LED chip package on TSV carrier
12/02/2014US8900891 Fabrication method for interdigitated back contact photovoltaic cells
12/02/2014US8900884 MTJ element for STT MRAM
12/02/2014US8900538 Doped, passivated graphene nanomesh, method of making the doped, passivated graphene nanomesh, and semiconductor device including the doped, passivated graphene nanomesh
12/02/2014US8900473 Polishing solution for CMP, and method for polishing substrate using the polishing solution for CMP
12/02/2014US8899098 Semiconductor gas sensor and method for measuring a residual gas proportion with a semiconductor gas sensor
11/2014
11/27/2014US20140349491 Methods and apparatus for selective oxidation of a substrate
11/27/2014US20140349473 Dummy Gate Electrode of Semiconductor Device
11/27/2014US20140349472 Flash memory
11/27/2014US20140349471 Profile pre-shaping for replacement poly gate interlayer dielectric
11/27/2014US20140349470 Schottky diode and method for fabricating the same
11/27/2014US20140349460 Method for producing a silicon-germanium film with variable germanium content
11/27/2014US20140349459 Integrated Circuit Having Raised Source Drains Devices with Reduced Silicide Contact Resistance and Methods to Fabricate Same
11/27/2014US20140349458 Source and Drain Dislocation Fabrication in FinFETs
11/27/2014US20140349457 Floating body memory cell apparatus and methods
11/27/2014US20140349456 Trench power mosfet structure fabrication method
11/27/2014US20140349451 Complementary metal oxide semiconductor (cmos) device having gate structures connected by a metal gate conductor
11/27/2014US20140349449 Elemental semiconductor material contact for high electron mobility transistor
11/27/2014US20140349445 Display substrate, display device, and method of manufacturing the display substrate
11/27/2014US20140349444 Method for manufacturing semiconductor device and semiconductor device
11/27/2014US20140349437 Image sensors and methods of manufacturing the same
11/27/2014US20140349112 Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
11/27/2014US20140347771 Protection device and related fabrication methods
11/27/2014US20140347254 El display device, driving method thereof, and electronic equipment provided with the el display device
11/27/2014US20140347135 Bipolar transistors with control of electric field
11/27/2014US20140347083 Silicon-on-insulator (soi) body-contact pass gate structure
11/27/2014US20140346668 Semiconductor device, method for manufacturing same, and electronic component
11/27/2014US20140346662 Forming modified cell architecture for finfet technology and resulting device
11/27/2014US20140346650 Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
11/27/2014US20140346649 Three dimension structure memory
11/27/2014US20140346640 Non-lithographic hole pattern formation
11/27/2014US20140346639 Process for manufacturing a semiconductor substrate, and semiconductor substrate obtained
11/27/2014US20140346633 Semiconductor device and method of manufacturing semiconductor device
11/27/2014US20140346623 Film-Covered Open-Cavity Sensor Package
11/27/2014US20140346617 Semiconductor device and method for fabricating the same
11/27/2014US20140346616 Transistor and semiconductor structure
11/27/2014US20140346615 Enhancement-mode transistors with increased threshold voltage
11/27/2014US20140346614 Semiconductor device
11/27/2014US20140346613 Methods of fabricating fin structures
11/27/2014US20140346612 Bulk semiconductor fins with self-aligned shallow trench isolation structures
11/27/2014US20140346610 Semiconductor device
11/27/2014US20140346609 CMOS Process To Improve SRAM Yield
11/27/2014US20140346608 Semiconductor device and a method of fabricating the same
11/27/2014US20140346607 Tuning Tensile Strain on FinFET
11/27/2014US20140346606 Gate rounding for reduced transistor leakage current
11/27/2014US20140346605 Integrated circuits with improved source/drain contacts and methods for fabricating such integrated circuits
11/27/2014US20140346604 Thin film transistor, display apparatus including the thin film transistor, and method of manufacturing the thin film transistor
11/27/2014US20140346603 Transistor devices having an anti-fuse configuration and methods of forming the same
11/27/2014US20140346602 Semiconductor devices including protruding insulation portions between active fins
11/27/2014US20140346601 Semiconductor device
11/27/2014US20140346600 Integrated Circuit Having MOSFET with Embedded Stressor and Method to Fabricate Same
11/27/2014US20140346599 Finfet semiconductor devices with local isolation features and methods for fabricating the same
11/27/2014US20140346598 High voltage pmos (hvpmos) transistor with a composite drift region and manufacture method thereof
11/27/2014US20140346597 High voltage laterally diffused metal oxide semiconductor
11/27/2014US20140346596 High voltage laterally diffused metal oxide semiconductor
11/27/2014US20140346595 Semiconductor device and method of forming the same
11/27/2014US20140346593 Super-junction trench mosfets with short terminations
11/27/2014US20140346592 Semiconductor device
11/27/2014US20140346591 Semiconductor device and method for manufacturing the same
11/27/2014US20140346590 Semiconductor Device, Method of Manufacturing a Semiconductor Device and Integrated Circuit
11/27/2014US20140346589 Semiconductor Device with Charge Compensation
11/27/2014US20140346588 Superjunction power device and manufacturing method
11/27/2014US20140346587 Integrated circuit having mosfet with embedded stressor and method to fabricate same
11/27/2014US20140346586 Non-volatile memory structure
11/27/2014US20140346577 Electronic device with asymmetric gate strain
11/27/2014US20140346576 Mosfets with multiple dislocation planes
11/27/2014US20140346575 Semiconductor device with self-aligned contact and method of manufacturing the same
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