Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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01/06/1981 | CA1093216A1 Silicon device with uniformly thick polysilicon |
01/06/1981 | CA1093215A1 Charge-flow transistor and instrument employing the same |
01/06/1981 | CA1093165A1 Fet amplifier comprising a circulator for an input signal as an isolator |
12/30/1980 | US4242737 Non-volatile semiconductor memory elements |
12/30/1980 | US4242736 Capacitor memory and methods for reading, writing, and fabricating capacitor memories |
12/30/1980 | US4242697 Dielectrically isolated high voltage semiconductor devices |
12/30/1980 | US4242693 Compensation of VBE non-linearities over temperature by using high base sheet resistivity devices |
12/30/1980 | US4242692 Charge transfer device which has a pair of straight portions joined by a direction changing portion |
12/30/1980 | US4242691 MOS Semiconductor device |
12/30/1980 | US4242690 High breakdown voltage semiconductor device |
12/30/1980 | US4242654 CTD Transversal filter with parallel inputs |
12/30/1980 | US4242603 Dynamic storage element |
12/30/1980 | US4242600 Digital CCD arrangement |
12/30/1980 | US4242156 Method of fabricating an SOS island edge passivation structure |
12/30/1980 | CA1092726A1 Structure and fabrication method for integrated circuits with polysilicon lines having low sheet resistance |
12/30/1980 | CA1092723A1 High speed semiconductor device |
12/30/1980 | CA1092722A1 Bi-polar integrated circuit structure and method of fabricating same |
12/30/1980 | CA1092708A1 Method and apparatus for replicating a charge packet |
12/24/1980 | WO1980002899A1 Charge coupled digital-to-analog converter |
12/23/1980 | US4241359 Semiconductor device having buried insulating layer |
12/23/1980 | US4241263 Charge transfer dual frequency delay line with phase independent coupling |
12/23/1980 | US4241262 Circuit for measuring the charge stored in a charge-coupled device |
12/23/1980 | US4241167 Electrolytic blocking contact to InP |
12/23/1980 | US4240843 Single crystal semiconductors |
12/23/1980 | US4240196 Fabrication of two-level polysilicon devices |
12/23/1980 | CA1092254A1 High power gallium arsenide schottky barrier field effect transistor made by electron lithography |
12/23/1980 | CA1092253A1 Field effect transistors and fabrication of integrated circuits containing the transistors |
12/16/1980 | US4240096 Fluorine-doped P type silicon |
12/16/1980 | US4240093 Integrated circuit device including both N-channel and P-channel insulated gate field effect transistors |
12/16/1980 | US4240091 Semiconductor controlled rectifier device with small area dV/dt self-protecting means |
12/16/1980 | US4240089 Linearized charge transfer devices |
12/16/1980 | US4239991 Clock voltage generator for semiconductor memory |
12/16/1980 | US4239983 Non-destructive charge transfer device differencing circuit |
12/16/1980 | CA1091817A1 Method for growing semiconductor crystal |
12/16/1980 | CA1091816A1 Power transistor and method of manufacturing same |
12/16/1980 | CA1091815A1 Integrated circuit using an insulated gate field effect transistor |
12/10/1980 | EP0020233A1 Integrated structure comprising a transistor and three anti-saturation diodes |
12/10/1980 | EP0020164A1 Monolithic HVMOSFET array |
12/10/1980 | EP0020163A1 Monolithic HVMOSFET array |
12/10/1980 | EP0020135A1 Three-dimensional integration by graphoepitaxy |
12/10/1980 | EP0020113A1 Semiconductor device |
12/10/1980 | EP0020054A1 Semiconductor memory device using one transistor memory cell |
12/10/1980 | EP0019886A1 Semiconductor memory |
12/10/1980 | EP0019883A2 Semiconductor device comprising a bonding pad |
12/10/1980 | EP0019882A1 Semiconductor integrated circuit device with non-volatile semiconductor memory cells |
12/10/1980 | EP0019878A1 Time-axis picture-signal converter for facsimile and the like |
12/10/1980 | EP0019758A1 Short-channel field-effect transistor and process for its manufacture |
12/10/1980 | EP0019722A1 Integrated charge-coupled microcircuit |
12/09/1980 | US4238764 Solid state semiconductor element and contact thereupon |
12/09/1980 | US4238763 Solid state microwave devices with small active contact and large passive contact |
12/09/1980 | US4238761 Integrated gate assisted turn-off, amplifying gate thyristor with narrow lipped turn-off diode |
12/09/1980 | US4238758 Semiconductor gas sensor |
12/09/1980 | US4238757 Field effect transistor for detection of biological reactions |
12/09/1980 | US4238232 Indium-antimony |
12/09/1980 | CA1091362A1 Power transistor |
12/09/1980 | CA1091361A1 Semiconductor device having an amorphous silicon active region |
12/09/1980 | CA1091349A1 Device for reproducing the charge stored in an input capacitor in a plurality of output capacitors |
12/09/1980 | CA1091312A1 High field capacitor structure employing a carrier trapping region |
12/09/1980 | CA1091308A1 Device for coupling transistors operated in i.sup.2l to a transistor operated at a higher bias-current |
12/02/1980 | US4237473 Gallium phosphide JFET |
12/02/1980 | US4237389 Charge coupled device channel crossover circuit |
12/02/1980 | US4236832 Strain insensitive integrated circuit resistor pair |
12/02/1980 | US4236830 CCD Parallel-serial and serial-parallel charge transfer method and apparatus |
11/27/1980 | WO1980002623A1 Method of fabricating semiconductor device |
11/26/1980 | EP0019560A1 Multiple-drain MOS transistor logic gates |
11/26/1980 | EP0019506A1 Charge substraction and charge quantity generation transfer device |
11/26/1980 | EP0019456A1 Semiconductor devices and method for producing the same |
11/26/1980 | EP0019355A1 Transistor structure |
11/26/1980 | EP0019119A2 Method of forming a short-channel field-effect transistor and field-effect transistor made by that method |
11/26/1980 | EP0019063A1 Electrically programmable field-effect transistor and process for its manufacture |
11/25/1980 | US4236171 High power transistor having emitter pattern with symmetric lead connection pads |
11/25/1980 | US4236170 Gate controlled negative resistance semiconductor device |
11/25/1980 | US4236169 Thyristor device |
11/25/1980 | US4236167 Stepped oxide, high voltage MOS transistor with near intrinsic channel regions of different doping levels |
11/25/1980 | US4236166 Vertical field effect transistor |
11/25/1980 | US4236165 Planar semiconductor device |
11/25/1980 | US4236164 Bipolar transistor stabilization structure |
11/25/1980 | US4236121 Oscillators including charge-flow transistor logic elements |
11/25/1980 | US4235014 Apparatus for assembling a plurality of articles |
11/25/1980 | US4235011 Semiconductor apparatus |
11/25/1980 | US4235010 Semiconductor integrated circuit device composed of insulated gate field-effect transistor |
11/25/1980 | CA1090454A1 Devices including a layer of amorphous silicon |
11/18/1980 | US4234887 V-Groove charge-coupled device |
11/18/1980 | US4234807 Ladder device with weighting factor adjusting means |
11/18/1980 | US4234803 Integrated logic circuit arrangement |
11/18/1980 | US4234362 Method for forming an insulator between layers of conductive material |
11/18/1980 | US4234357 Process for manufacturing emitters by diffusion from polysilicon |
11/18/1980 | CA1090005A1 Semiconductor fabrication method for improved device yield |
11/18/1980 | CA1089986A1 Operating circuitry for semiconductor charge coupled devices |
11/13/1980 | WO1980002470A1 Output buffer circuit for cmos integrated circuit |
11/12/1980 | EP0018862A1 Planar avalanche diode with breakdown voltage between 4 and 8 volts, and method of making it |
11/12/1980 | EP0018764A1 A semiconductor memory device in which soft errors due to alpha particles are prevented |
11/12/1980 | EP0018730A2 Semiconductor device having a high breakdown voltage |
11/12/1980 | EP0018501A1 Method of manufacturing high-density vertical FETs and a matrix of cells produced thereby |
11/12/1980 | EP0018487A1 Semiconductor device and manufacturing method thereof |
11/12/1980 | EP0018409A1 Method for producing a semi-conductor element |
11/11/1980 | US4233672 High-speed semiconductor device |
11/11/1980 | US4233671 Read only memory and integrated circuit and method of programming by laser means |
11/11/1980 | US4233618 Integrated circuit with power transistor |
11/11/1980 | US4233617 Field effect transistor with insulated gate electrode |