| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 09/23/1980 | US4224631 Semiconductor voltage reference device |
| 09/23/1980 | US4224088 Heating deposited phosphorus on separate portions to form two diffusion layers of different depths |
| 09/23/1980 | US4224083 Dynamic isolation of conductivity modulation states in integrated circuits |
| 09/23/1980 | CA1086431A1 Etching of iii-v semiconductor materials in the preparation of heterodiodes |
| 09/18/1980 | WO1980001968A1 Dielectrically isolated high voltage semiconductor devices |
| 09/17/1980 | EP0015835A2 High-frequency semiconductor switching device and process for its manufacture |
| 09/17/1980 | EP0015821A1 Semiconductor device having a guard ring and process for its manufacture |
| 09/17/1980 | EP0015694A2 Method for forming an insulating film on a semiconductor substrate surface |
| 09/17/1980 | EP0015675A1 Semiconductor memory device |
| 09/17/1980 | EP0015649A1 Thyristor |
| 09/17/1980 | EP0015596A1 Charge-coupled devices |
| 09/17/1980 | EP0015488A1 Thyristor stack |
| 09/17/1980 | EP0015446A1 Non-destructive charge transfer device differencing circuit |
| 09/17/1980 | EP0015342A1 Substrate bias regulator |
| 09/16/1980 | US4223336 Low resistivity ohmic contacts for compound semiconductor devices |
| 09/16/1980 | US4223335 Semiconductor device body having identical isolated composite resistor regions |
| 09/16/1980 | US4223334 High voltage CMOS with local oxidation for self-aligned guard rings and process of fabrication |
| 09/16/1980 | US4223333 Charge pumping semiconductor memory |
| 09/16/1980 | US4223332 Thyristor having an anode transverse field emitter |
| 09/16/1980 | US4223331 Thyristor with two control terminals and control device |
| 09/16/1980 | US4223329 Bipolar dual-channel charge-coupled device |
| 09/16/1980 | US4223328 Field controlled thyristor with dual resistivity field layer |
| 09/16/1980 | US4223327 Protective film |
| 09/16/1980 | US4223233 Charge transfer device input circuitry |
| 09/16/1980 | US4223151 Process for preparing polycyclic heterocycles having a pyran ring |
| 09/16/1980 | US4222815 Isotropic etching of silicon strain gages |
| 09/16/1980 | US4222165 Two-phase continuous poly silicon gate CCD |
| 09/16/1980 | US4222164 Method of fabrication of self-aligned metal-semiconductor field effect transistors |
| 09/16/1980 | CA1085969A1 Semiconductor devices and method of manufacturing the same |
| 09/16/1980 | CA1085964A1 Irradiation for rapid turn-off reverse blocking diode thyristor |
| 09/16/1980 | CA1085963A1 Tailoring of recovery charge in power diodes and thyristors by irradiation |
| 09/16/1980 | CA1085947A1 Multilayer organic photovoltaic elements |
| 09/09/1980 | US4222063 VMOS Floating gate memory with breakdown voltage lowering region |
| 09/09/1980 | US4222062 VMOS Floating gate memory device |
| 09/09/1980 | US4221045 Self-aligned contacts in an ion implanted VLSI circuit |
| 09/09/1980 | US4221044 Self-alignment of gate contacts at local or remote sites |
| 09/09/1980 | CA1085500A1 Charge coupled device exposure control |
| 09/09/1980 | CA1085468A1 Semiconductor switch |
| 09/09/1980 | CA1085467A1 Threshold integrated injection logic |
| 09/03/1980 | EP0015072A1 A field effect transistor |
| 09/03/1980 | EP0015064A1 Process for producing bipolar semiconductor device |
| 09/03/1980 | EP0014761A1 Contact system for power thyristor |
| 09/02/1980 | US4220963 Fast recovery diode with very thin base |
| 09/02/1980 | US4220961 Monolithic combination of two complementary bipolar transistors |
| 09/02/1980 | US4220483 Method of increasing the gettering effect in the bulk of semiconductor bodies utilizing a preliminary thermal annealing step |
| 09/02/1980 | US4219925 Method of manufacturing a device in a silicon wafer |
| 09/02/1980 | CA1085061A1 Transistor with emitter of high and low doping |
| 09/02/1980 | CA1085060A1 Semiconductor devices having a rectifying metal-to- semiconductor junction |
| 09/02/1980 | CA1085053A1 Depletion mode field effect transistor memory system |
| 09/02/1980 | CA1085052A1 Charge coupled circuit arrangements and devices |
| 08/26/1980 | US4219835 VMOS Mesa structure and manufacturing process |
| 08/26/1980 | US4219834 One-device monolithic random access memory and method of fabricating same |
| 08/26/1980 | US4219832 Thyristor having low on-state voltage with low areal doping emitter region |
| 08/26/1980 | US4219829 Field effect transistor having a surface channel and its method of operation |
| 08/26/1980 | US4219828 Multidrain metal-oxide-semiconductor field-effect |
| 08/26/1980 | US4219827 Integrated circuit with metal path for reducing parasitic effects |
| 08/26/1980 | US4219797 Integrated circuit resistance ladder having curvilinear connecting segments |
| 08/21/1980 | WO1980001738A1 Controlling the properties of native films using selective growth chemistry |
| 08/20/1980 | EP0014647A1 Two-dimensional acousto-electric device for the storing and processing of information |
| 08/20/1980 | EP0014516A1 Forming irradiated regions in semiconductor bodies by nuclear radiation |
| 08/20/1980 | EP0014435A1 Thyristor controlled by field effect transistor |
| 08/20/1980 | EP0014388A1 Semiconductor memory device |
| 08/20/1980 | EP0014303A1 Method for making integrated MOS circuits by the silicon-gate technique |
| 08/19/1980 | US4218693 Integrated logic circuit having interconnections of various lengths between field effect transistors of enhancement and depletion modes |
| 08/19/1980 | US4218495 Ionized-cluster-beam deposition process |
| 08/19/1980 | US4218298 Selective chemical sensitive FET transducer |
| 08/19/1980 | US4218271 Method of manufacturing semiconductor devices utilizing a sure-step molecular beam deposition |
| 08/19/1980 | US4218267 Microelectronic fabrication method minimizing threshold voltage variation |
| 08/19/1980 | CA1084164A1 Input circuit for semiconductor charge transfer devices |
| 08/12/1980 | US4217601 Non-volatile memory devices fabricated from graded or stepped energy band gap insulator MIM or MIS structure |
| 08/12/1980 | US4217600 Charge transfer logic apparatus |
| 08/12/1980 | US4217599 Narrow channel MOS devices and method of manufacturing |
| 08/12/1980 | US4216574 Charge coupled device |
| 08/12/1980 | US4216573 Three mask process for making field effect transistors |
| 08/07/1980 | WO1980001624A1 Reduction of surface recombination current in gaas devices |
| 08/06/1980 | EP0014149A1 Reference voltage generator and circuit for measuring the threshold voltage of a MOS transistor, applicable to such a reference voltage generator |
| 08/06/1980 | EP0014098A2 Gate turn-off thyristor |
| 08/06/1980 | EP0014080A1 A three-terminal semiconductor switch device |
| 08/05/1980 | US4216491 Semiconductor integrated circuit isolated through dielectric material |
| 08/05/1980 | US4216490 Static induction transistor |
| 08/05/1980 | US4216488 Lateral semiconductor diac |
| 08/05/1980 | US4216487 Bidirectional light-activated thyristor having substrate optical isolation |
| 08/05/1980 | US4216485 Optical transistor structure |
| 08/05/1980 | US4216404 Housing and lead arrangements for electromechanical transducers |
| 08/05/1980 | US4216386 Charge coupled device with reduced power consumption upon charge transfer |
| 08/05/1980 | US4216038 Self-alignment technique using a double mask layer |
| 08/05/1980 | US4216037 Method for manufacturing a heterojunction semiconductor device by disappearing intermediate layer |
| 08/05/1980 | US4216036 Self-terminating thermal oxidation of Al-containing group III-V compound layers |
| 08/05/1980 | US4216030 Process for the production of a semiconductor component with at least two zones which form a pn-junction and possess differing conductivity types |
| 08/05/1980 | US4216029 Method of making static induction transistor logic |
| 08/05/1980 | CA1083262A1 Inslated gate field effect transistor |
| 08/05/1980 | CA1083254A1 Method of making etched-striped substrate planar laser |
| 07/29/1980 | US4215418 Integrated digital multiplier circuit using current mode logic |
| 07/29/1980 | US4215358 Mesa type semiconductor device |
| 07/29/1980 | US4215357 Charge transfer device stored with fixed information |
| 07/29/1980 | US4215356 Junction field effect transistor |
| 07/29/1980 | US4215333 Resistor termination |
| 07/29/1980 | US4215156 Method for fabricating tantalum semiconductor contacts |
| 07/29/1980 | US4214359 MOS Devices having buried terminal zones under local oxide regions |
| 07/29/1980 | CA1082809A1 Irreversible semiconductor switching element and semiconductor memory device utilizing the same |